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61. 发明公开

KR1020140036765A 스퍼터링 장치 审中-实审
标题翻译：喷射装置
公开(公告)号：KR1020140036765A
公开(公告)日：2014-03-26
申请号：KR1020120103290
申请日：2012-09-18
申请人： 삼성디스플레이 주식회사
发明人： 황진호 , 김도현 , 신상원 , 김우송 , 정창오
IPC分类号： C23C14/34
CPC分类号： C23C14/352 , C23C14/0063 , C23C14/35 , C23C16/455 , C23C16/45565 , H01J37/3244 , H01J37/32449 , H01J37/32834 , H01J37/3411 , H01J37/3417 , H01J37/3435 , H01J37/3438
摘要： A sputtering device is provided. According to an embodiment of the present invention, the sputtering device includes: a sputtering target; a substrate supporting platform opposed to the sputtering target; a substrate located on the substrate supporting platform; an anode mask arranged between the sputtering target and the substrate; gas allocating tubes which are arranged between the anode mask and the sputtering target and are located separately from each other. Each of the gas allocating tubes includes multiple releasing holes which release gas.
摘要翻译：提供溅射装置。根据本发明的实施例，溅射装置包括：溅射靶; 与溅射靶相对的衬底支撑平台; 位于基板支撑平台上的基板; 布置在溅射靶和衬底之间的阳极掩模; 气体分配管布置在阳极掩模和溅射靶之间并且彼此分开定位。每个气体分配管包括释放气体的多个释放孔。

62. 发明授权

KR101376073B1 박막 트랜지스터, 이를 포함하는 어레이 기판 및 이의 제조방법 有权
标题翻译：薄膜晶体管，具有晶体管的阵列基板以及制造阵列基板的方法
公开(公告)号：KR101376073B1
公开(公告)日：2014-03-21
申请号：KR1020070058353
申请日：2007-06-14
申请人： 삼성디스플레이 주식회사
发明人： 이제훈 , 김도현 , 이은국 , 정창오
IPC分类号： G02F1/136 , H01L29/786
CPC分类号： H01L29/7869 , H01L27/1214 , H01L27/1225 , H01L27/124 , H01L27/1288
摘要： 표시품질을향상시키기위한박막트랜지스터, 이를포함하는어레이기판및 이의제조방법에서, 박막트랜지스터는반도체패턴, 소스전극, 드레인전극및 게이트전극을포함한다. 반도체패턴은베이스기판상에형성되고금속산화물을포함한다. 소스및 드레인전극들은반도체패턴의경계와대응되는일부영역이반도체패턴의경계를따라형성되며, 반도체패턴상에서로이격되어배치된다. 게이트전극은소스및 드레인전극들이서로이격된영역상에배치되어양단부가소스및 드레인전극들과오버랩된다. 이에따라, 금속산화물을포함하는반도체패턴에의해누설전류의발생이방지되어표시품질을향상시킬수 있다.

63. 发明公开

KR1020140003027A 박막트랜지스터 및 이를 위한 산화아연계 스퍼터링 타겟 有权
标题翻译：薄膜晶体管和氧化锌基溅射靶
公开(公告)号：KR1020140003027A
公开(公告)日：2014-01-09
申请号：KR1020120070390
申请日：2012-06-29
申请人： 삼성코닝어드밴스드글라스 유한회사 , 삼성디스플레이 주식회사
发明人： 박재우 , 이윤규 , 김도현 , 김동조 , 박주옥 , 손인성 , 윤상원 , 이건효 , 이용진 , 전우석
IPC分类号： H01L29/786 , C23C14/08 , C23C14/34
CPC分类号： H01L29/78693 , C23C14/0036 , C23C14/086 , C23C14/3407 , C23C14/3414 , H01L29/45
摘要： The present invention discloses a thin film transistor of a crystalline thin film. The transistor includes a metal electrode and a zinc oxide based blocking layer for preventing the diffusion of a material from the metal electrode. The zinc oxide based blocking layer is doped with 1-50 wt% of indium oxide in regards to zinc oxide. The present invention provides a zinc oxide based sputtering target for a thin film transistor blocking layer deposition that is doped with 1-50 wt% of indium oxide in regards to zinc oxide.
摘要翻译：本发明公开了一种结晶薄膜的薄膜晶体管。晶体管包括用于防止材料从金属电极扩散的金属电极和氧化锌基阻挡层。相对于氧化锌，氧化锌基阻挡层掺杂有1-50重量％的氧化铟。本发明提供一种用于薄膜晶体管阻挡层沉积的基于氧化锌的溅射靶，该氧化锌相对于氧化锌掺杂有1-50重量％的氧化铟。

64. 发明公开

KR1020130102666A 박막 트랜지스터 기판 및 그 제조 방법 审中-实审
标题翻译：薄膜晶体管基板及其制造方法
公开(公告)号：KR1020130102666A
公开(公告)日：2013-09-23
申请号：KR1020120023610
申请日：2012-03-07
申请人： 삼성디스플레이 주식회사
发明人： 최영주 , 김준걸 , 김도현 , 이우근
IPC分类号： G02F1/136 , G02F1/1343
CPC分类号： G02F1/13439 , G02F1/1362 , G02F1/136286 , G02F2001/136231 , G02F2001/136295
摘要： PURPOSE: A thin film transistor substrate and a method for manufacturing the same are provided to prevent damage to a semiconductor pattern by forming an etch stopper. CONSTITUTION: A semiconductor pattern (340) is arranged on a gate electrode. A source electrode (350) is arranged on the semiconductor pattern. A drain electrode (355) is arranged on the semiconductor pattern. A pixel electrode (370) is connected to the drain electrode. At least one part of a common electrode part (345) is overlapped with the pixel electrode.
摘要翻译：目的：提供薄膜晶体管基板及其制造方法，以通过形成蚀刻停止件来防止对半导体图案的损坏。构成：半导体图案（340）布置在栅电极上。源电极（350）布置在半导体图案上。漏电极（355）布置在半导体图案上。像素电极（370）连接到漏电极。公共电极部（345）的至少一部分与像素电极重叠。

65. 发明公开

KR1020110093113A 박막 트랜지스터 기판 및 이의 제조 방법 无效
标题翻译：薄膜晶体管阵列基板及其制造方法
公开(公告)号：KR1020110093113A
公开(公告)日：2011-08-18
申请号：KR1020100012957
申请日：2010-02-11
申请人： 삼성디스플레이 주식회사
发明人： 윤필상 , 김기원 , 류혜영 , 이우근 , 최승하 , 윤재형 , 정경재 , 이영욱 , 이제훈 , 윤갑수 , 김도현 , 양동주 , 최영주
IPC分类号： H01L29/786 , G02F1/133
CPC分类号： H01L29/41733 , H01L21/44 , H01L21/441 , H01L21/465 , H01L21/475 , H01L21/47573 , H01L21/47635 , H01L27/1214 , H01L27/1225 , H01L27/127 , H01L27/1288 , H01L29/66969 , H01L29/78606 , H01L29/7869 , H01L29/78696 , H01L29/66742
摘要： PURPOSE: A thin film transistor substrate and a manufacturing method thereof are provided to include an etching preventing pattern which prevents exposure of an oxide semiconductor pattern between a source electrode and a drain electrode, thereby preventing damage of the oxide semiconductor pattern. CONSTITUTION: A gate insulating film is formed on an insulating substrate(10). An oxide semiconductor pattern(42) is arranged on the gate insulating film. An etching preventing pattern(52) is formed on the oxide semiconductor pattern. A source electrode and drain electrodes(65,66) are formed on the etching preventing pattern. All sides of the etching preventing pattern are arranged on the inside of the oxide semiconductor pattern.
摘要翻译：目的：提供薄膜晶体管基板及其制造方法，其包括防止在源电极和漏电极之间暴露氧化物半导体图案的防蚀图案，从而防止氧化物半导体图案的损坏。构成：在绝缘基板（10）上形成栅极绝缘膜。氧化物半导体图案（42）布置在栅极绝缘膜上。在氧化物半导体图案上形成有防蚀图案（52）。源极电极和漏电极（65,66）形成在防蚀图案上。防蚀图案的全部侧面配置在氧化物半导体图案的内侧。

66. 发明公开

KR1020110072808A 박막트랜지스터, 그 제조방법 및 박막트랜지스터를 이용한 표시기판 有权
标题翻译：薄膜晶体管，使用薄膜晶体管的制造方法及显示基板
公开(公告)号：KR1020110072808A
公开(公告)日：2011-06-29
申请号：KR1020090129888
申请日：2009-12-23
申请人： 삼성디스플레이 주식회사
发明人： 김도현 , 정기훈 , 이동훈 , 윤갑수 , 최재호 , 양성훈 , 윤필상 , 서승미
IPC分类号： H01L29/786
CPC分类号： H01L29/7869 , H01L29/78606 , H01L29/78633 , H01L27/1225
摘要： PURPOSE: A thin film transistor, a method for manufacturing the same, and a display board using the same are provided to improve the characteristic by preventing an oxide semiconductor layer to external light. CONSTITUTION: A protective layer(60) is formed on an oxide semiconductor layer(40) to be overlapped with the channel region of the oxide semiconductor layer. An opaque layer is formed between the oxide semiconductor layer and the protective layer. A source electrode is in contact with one side of the oxide semiconductor layer. A drain electrode(80) is in contact with another side of the oxide semiconductor layer to face to the source electrode through the channel region. A gate electrode applies electric field to the oxide semiconductor layer. A gate insulating layer is formed between the gate electrode and the oxide semiconductor layer.
摘要翻译：目的：提供一种薄膜晶体管，其制造方法和使用该薄膜晶体管的显示板，以通过防止氧化物半导体层到外部光而提高其特性。构成：在氧化物半导体层（40）上形成与氧化物半导体层的沟道区重叠的保护层（60）。在氧化物半导体层和保护层之间形成不透明层。源电极与氧化物半导体层的一侧接触。漏电极（80）与氧化物半导体层的另一侧接触，以通过沟道区面对源电极。栅电极向氧化物半导体层施加电场。在栅电极和氧化物半导体层之间形成栅极绝缘层。

67. 发明公开

KR1020110031546A 박막 트랜지스터 표시판 및 그의 제조 방법 有权
标题翻译：薄膜晶体管阵列及其制造方法
公开(公告)号：KR1020110031546A
公开(公告)日：2011-03-29
申请号：KR1020090088848
申请日：2009-09-21
申请人： 삼성디스플레이 주식회사
发明人： 이동훈 , 김도현 , 정창오 , 서오성 , 이신흥
IPC分类号： H01L29/786
CPC分类号： H01L27/124 , H01L29/78618 , H01L27/1214 , H01L29/458
摘要： PURPOSE: A thin film transistor display panel and a manufacturing method thereof are provided to improve a display property of a liquid crystal display panel by forming a diffusion preventing layer including nitrogen in the lower side of a copper alloy layer. CONSTITUTION: A semiconductor layer is formed on a gate insulation layer and is overlapped with a gate electrode. A first resistive contact unit(161,165) is positioned on the upper side of the semiconductor layer. A diffusion preventing layer(643,645) is formed on the resistive contact unit and includes nitrogen and the same material as the resistive contact unit. A second resistive contact unit is positioned on the upper side of the diffusion preventing unit. A protection layer(180) is formed on the upper side of a data pattern. A pixel electrode is formed on the upper side of the protection layer and is electrically connected to a drain electrode.
摘要翻译：目的：提供薄膜晶体管显示面板及其制造方法，以通过在铜合金层的下侧形成包括氮的扩散防止层来提高液晶显示面板的显示性能。构成：半导体层形成在栅极绝缘层上并与栅电极重叠。第一电阻接触单元（161,165）位于半导体层的上侧。扩散防止层（643,645）形成在电阻接触单元上，并且包括氮和与电阻接触单元相同的材料。第二电阻接触单元位于扩散防止单元的上侧。在数据图案的上侧形成保护层（180）。像素电极形成在保护层的上侧，并与漏电极电连接。

68. 发明公开

KR1020110003801A 박막 트랜지스터 표시판 및 이의 제조 방법 有权
标题翻译：薄膜晶体管基板及其制造方法
公开(公告)号：KR1020110003801A
公开(公告)日：2011-01-13
申请号：KR1020090061249
申请日：2009-07-06
申请人： 삼성디스플레이 주식회사
发明人： 윤갑수 , 김도현 , 양성훈 , 정기훈 , 최재호 , 서승미
IPC分类号： G02F1/136
CPC分类号： H01L27/1248 , H01L27/1214 , H01L27/1225 , H01L27/1255 , H01L27/1288 , H01L29/7869
摘要： PURPOSE: A thin film transistor substrate and a method for fabricating the same are provided to improve the electric characteristics including an oxide active layer pattern by forming a protection layer which excludes hydrogen. CONSTITUTION: Gate wires(22,26) are formed on an insulation substrate(10), and oxide active patterns(42,44) are formed in the gate wires. Data wires(62,65,66,67) cross the gate wires on the oxide active pattern layer. A protection layer(70) is formed between the oxide active pattern and the data wires.
摘要翻译：目的：提供薄膜晶体管基板及其制造方法，通过形成不含氢的保护层来改善包括氧化物活性层图案的电特性。构成：栅极线（22,26）形成在绝缘基板（10）上，并且在栅极线中形成氧化物活性图案（42,44）。数据线（62,66,66,67）与氧化物活性图案层上的栅极线交叉。在氧化物活性图案和数据线之间形成保护层（70）。

69. 发明公开

KR1020100070085A 박막 트랜지스터 표시판 및 이의 제조 방법 无效
标题翻译：薄膜晶体管基板及其制造方法
公开(公告)号：KR1020100070085A
公开(公告)日：2010-06-25
申请号：KR1020080128682
申请日：2008-12-17
申请人： 삼성디스플레이 주식회사
发明人： 이제훈 , 김도현 , 이동훈 , 김기원
IPC分类号： G02F1/136 , H01L29/786
CPC分类号： H01L27/1225 , H01L27/1248 , H01L29/4908 , H01L29/7869
摘要： PURPOSE: A thin film transistor substrate and a method for manufacturing the same are provided to improve electrical properties and anti moist infiltration properties. CONSTITUTION: Gate lines(22,26) are formed on an insulating substrate(10). A gate insulating layer(30) is formed on the gate lines. An oxide active layer pattern directly contacts the gate insulating layer on the gate insulating layer. A data line is formed on the oxide active layer pattern. A protective film directly contacts the oxide active layer pattern on the data line and the oxide active layer pattern.
摘要翻译：目的：提供薄膜晶体管基板及其制造方法，以改善电气性能和抗潮湿渗透性能。构成：栅极线（22,26）形成在绝缘基板（10）上。栅极绝缘层（30）形成在栅极线上。氧化物有源层图案直接接触栅极绝缘层上的栅极绝缘层。在氧化物活性层图案上形成数据线。保护膜直接接触数据线上的氧化物活性层图案和氧化物活性层图案。

70. 发明公开

KR1020090079686A 박막 트랜지스터 기판 및 이의 제조 방법 有权
标题翻译：薄膜晶体管阵列基板及其制造方法
公开(公告)号：KR1020090079686A
公开(公告)日：2009-07-22
申请号：KR1020080005833
申请日：2008-01-18
申请人： 삼성디스플레이 주식회사
发明人： 이제훈 , 윤갑수 , 손경석 , 김도현 , 정창오
IPC分类号： H01L29/786
CPC分类号： H01L29/7869 , H01L27/1225 , H01L27/1296 , H01L29/4908 , H01L27/1248
摘要： A thin film transistor substrate is provided to obtain uniform electrical characteristics with respect to a large-sized display device by increasing mobility of charges. A thin film transistor substrate includes an oxide semiconductor layer(40), a gate electrode(26), a gate insulating layer(30), and a protective layer(70). The oxide semiconductor layer is formed on an insulating substrate(10). The oxide semiconductor layer has a channel section. The gate electrode is overlapped with the oxide semiconductor layer. The gate insulating layer is inserted into a space between the oxide semiconductor layer and the gate electrode. The protective layer is formed on an upper part of the oxide semiconductor layer and an upper part of the gate electrode. At least one of the gate insulating layer and the protective layer includes fluorine-based silicon.
摘要翻译：提供薄膜晶体管基板，以通过增加电荷的迁移率来获得相对于大尺寸显示装置的均匀电特性。薄膜晶体管基板包括氧化物半导体层（40），栅电极（26），栅绝缘层（30）和保护层（70）。氧化物半导体层形成在绝缘基板（10）上。氧化物半导体层具有沟道部。栅电极与氧化物半导体层重叠。栅极绝缘层被插入到氧化物半导体层和栅电极之间的空间中。保护层形成在氧化物半导体层的上部和栅电极的上部。栅极绝缘层和保护层中的至少一个包括氟基硅。

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