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41. 发明公开

KR1020120011666A 직접변환방법을 이용한 라인타입의 방사선 영상센서, 이로 이루어진 영상센싱유닛 및 이를 포함하여 이루어진 방사선 영상 촬영장치 有权
标题翻译：使用直接转换方法的线型数字射线摄影传感器，由相同的数字射线摄影系统和具有相同的数字射线照相系统
公开(公告)号：KR1020120011666A
公开(公告)日：2012-02-08
申请号：KR1020100073666
申请日：2010-07-29
申请人： 주식회사 미루시스템즈 , 마루엘에스아이 주식회사
发明人： 남정현
IPC分类号： G01N23/04 , H01L31/115 , H04N5/32
CPC分类号： G01N23/04 , G01T1/20 , G01T1/2018 , H01L27/14676 , H01L31/115 , H04N5/32
摘要： PURPOSE: A line type radioactive image sensor using a direct conversion method, an image sensing unit, and a radioactive image photographing device including the same are provided to increase electron-hole pairs by increasing a radiation absorption ratio of a photo conductor. CONSTITUTION: A line type radioactive image sensor using a direct conversion method includes a photo conductor(420), electrodes(442,444), and a photographing device(460). The photo conductor is arranged in an incident radiation direction. An electron-hole pair is generated in the photo conductor by sending the radiation in a length direction. The photo conductor is formed between the electrodes which face each other. The photographing device is formed between the photo conductor and the electrode to which electrons or holes move and makes an image by sensing the moving electrons or holes.
摘要翻译：目的：提供使用直接转换方法的线型放射性图像传感器，图像感测单元和包括该直线转换方法的放射性图像拍摄装置，以通过增加光导体的辐射吸收比来增加电子 - 空穴对。构成：使用直接转换法的线型放射性图像传感器包括光导体（420），电极（442,444）和拍摄装置（460）。光导体沿入射辐射方向排列。通过沿长度方向发送辐射，在光导体中产生电子 - 空穴对。光电导体形成在彼此相对的电极之间。拍摄装置形成在光电导体和电子或空穴移动的电极之间，并通过感测移动的电子或空穴来形成图像。

42. 发明公开

KR1020110139186A Ｘ선 촬상장치 有权
标题翻译： X-RAY IMAGIMG设备
公开(公告)号：KR1020110139186A
公开(公告)日：2011-12-28
申请号：KR1020117013138
申请日：2010-03-18
申请人： 하마마츠 포토닉스 가부시키가이샤
发明人： 다카기신이치로 , 요네타야스히토 , 스즈키히사노리 , 무라마츠마사하루 , 츠네미히로시 , 츠루다케시 , 도타니다다야스 , 고무라다카요시
IPC分类号： H01L27/146 , H01L31/0216 , G01T1/24
CPC分类号： G01T1/244 , H01L27/14618 , H01L27/14623 , H01L27/14658 , H01L31/02164 , H01L31/115 , H01L2924/0002 , H01L2924/00
摘要： 입사한 X선을 검출하는 복수의 검출 화소가 배열된 X선 검출부가 한쪽의 면(11)측에 마련되며, 다른쪽의 면(12)이 X선 입사면으로 되어 있는 이면입사형의 고체촬상소자(10)와, 촬상소자(10)의 입사면(12)상에 마련되어 검출대상이 되는 X선보다 장파장의 광의 차폐에 이용되는 차폐층(20)에 의해서 X선 촬상장치(1)를 구성한다. 차폐층(20)은, 입사면(12)상에 직접 마련되는 제1 알루미늄층(21)과, 제1 알루미늄층(21)상에 마련되는 제2 알루미늄층(22)과, 제1, 제2 알루미늄층(21, 22)의 사이에 마련되어 자외광의 차폐에 이용되는 자외광 차폐층(25)을 가진다. 이것에 의해, X선 검출에 있어서의 노이즈 광의 검출의 영향을 억제하는 것이 가능한 X선 촬상장치가 실현된다.

43. 发明公开

KR1020110067818A 엑스레이 검출기용 어레기 기판 및 제조방법 有权
标题翻译：用于X射线探测器的阵列衬底及其制造方法
公开(公告)号：KR1020110067818A
公开(公告)日：2011-06-22
申请号：KR1020090124577
申请日：2009-12-15
申请人： 엘지디스플레이 주식회사
发明人： 조재형 , 류상철 , 김주한 , 이종문
IPC分类号： H01L29/786
CPC分类号： H01L27/14658 , G01T1/24 , G03B42/02 , H01L27/14676 , H01L31/115
摘要： PURPOSE: An array substrate for x-ray detector and a method for fabricating the same are provided to improve a fill factor by arranging a bias wire to be close to a data line. CONSTITUTION: In an array substrate for x-ray detector and a method for fabricating the same, a plurality of pixel regions are defined as a matrix type through vertically crossing of a plurality of data lines and plurality of gate lines. A plurality of thin film transistors comprises a plurality of gate electrodes, a plurality of active layers, a plurality of source electrode and drain electrodes. A plurality of photo diodes(120) are connected to the drain electrodes respectively. A plurality of bias wirings applies the bias voltage to the photo diodes. A plurality of read out lines(128) are connected to a plurality of source electrodes respectively.
摘要翻译：目的：提供一种用于x射线检测器的阵列基板及其制造方法，以通过将偏置线布置成靠近数据线来改善填充因子。构成：在X射线检测器的阵列基板及其制造方法中，通过多条数据线和多条栅极线的垂直交叉，将多个像素区域定义为矩阵型。多个薄膜晶体管包括多个栅电极，多个有源层，多个源电极和漏电极。多个光电二极管（120）分别连接到漏电极。多个偏置布线将偏置电压施加到光电二极管。多个读出线（128）分别连接到多个源电极。

44. 发明授权

KR101042048B1 리드 아웃 장치 및 이를 이용한 디지털 엑스선 검출장치 有权
标题翻译：使用相同的读出装置和数字X射线探测器
公开(公告)号：KR101042048B1
公开(公告)日：2011-06-16
申请号：KR1020100051347
申请日：2010-05-31
申请人： 주식회사 디알텍
发明人： 김중석 , 김응범 , 고병훈 , 문범진 , 윤정기
IPC分类号： H05G1/60
CPC分类号： A61B6/54 , G01T1/24 , H01L27/14676 , H01L31/115 , H05G1/60
摘要： PURPOSE: A readout device and a digital X-ray detecting apparatus are provided to simplify the structure of the apparatus by using a structure for adjusting a threshold voltage according to the voltage stored at a capacitor. CONSTITUTION: A capacitor(121) is serially connect to a pixel electrode(114) which collects electric charges, and stores the electric charges collected by the pixel electrode. The first transistor(122) changes a threshold voltage according to the voltage saved in the capacitor and outputs an output signal, changed according to the changed threshold voltage, to an image forming part which generates an image. The second transistor(123) whose one end is connected to the capacitor and the other end is connected to the ground, resets the capacitor according to a control signal.
摘要翻译：目的：提供读出装置和数字X射线检测装置，通过使用根据存储在电容器中的电压来调整阈值电压的结构来简化装置的结构。构成：电容器（121）串联连接到收集电荷的像素电极（114），并存储由像素电极收集的电荷。第一晶体管（122）根据保存在电容器中的电压来改变阈值电压，并将根据改变的阈值电压改变的输出信号输出到产生图像的图像形成部分。第一晶体管（123）的一端连接到电容器，另一端连接到地，根据控制信号复位电容器。

45. 发明公开

KR1020110059490A 기체 상태에서 전자 증배를 위한 픽셀화된 ＲＯＩＣ 전극 구조를 이용한 광 검출 장치 失效
标题翻译：光电检测装置使用用于气体电子放大的极化电极结构
公开(公告)号：KR1020110059490A
公开(公告)日：2011-06-02
申请号：KR1020090116244
申请日：2009-11-27
申请人： 한국전기연구원
发明人： 전성채 , 김봉회 , 송광섭 , 이동훈 , 허영 , 황윤금
IPC分类号： H01L31/101 , G01J1/00
CPC分类号： H01L31/101 , G01J1/42 , H01L31/0224 , H01L31/115
摘要： PURPOSE: A photon detector using a pixellated ROIC electrode structure for multiplying electrons in a gas state is provided to easily detect photon by inducing an electron multiplication in a high electric field region between a cathode and an anode. CONSTITUTION: A drift plane(120) is combined with the top of a chamber which maintains a constant vacuum state. An ROIC chip(110) is arranged on the lower side of the drift plane in the chamber and has a circuit for detecting photon. The ROIC chip includes a light detection region(160) which includes a plurality of cathodes and anodes. The plurality of anodes are exposed after the insulation layer is formed on the plurality of anodes. The plurality of cathodes are formed on the insulation layer between the plurality of anodes.
摘要翻译：目的：提供一种使用像素化ROIC电极结构来乘以气体状态的电子的光子检测器，以通过在阴极和阳极之间的高电场区域中引起电子倍增来容易地检测光子。构成：漂移平面（120）与保持恒定真空状态的室的顶部结合。 ROIC芯片（110）布置在室中的漂移平面的下侧，并具有用于检测光子的电路。 ROIC芯片包括包括多个阴极和阳极的光检测区域（160）。在绝缘层形成在多个阳极上之后，多个阳极被曝光。多个阴极形成在多个阳极之间的绝缘层上。

46. 发明授权

KR101035349B1 디지털 엑스-레이 검출기 및 그 제조방법 有权
标题翻译：数字X射线探测器及其制造方法
公开(公告)号：KR101035349B1
公开(公告)日：2011-05-20
申请号：KR1020090136010
申请日：2009-12-31
申请人： 하이디스 테크놀로지 주식회사
发明人： 이재필
IPC分类号： H01L29/786
CPC分类号： H01L27/14658 , G01T1/24 , H01L27/124 , H01L27/1248 , H01L27/14678 , H01L31/115
摘要： PURPOSE: A digital X-ray detector and a manufacturing method thereof are provided to easily control a back gate effect by forming a mush room structure. CONSTITUTION: A plurality of gate lines(GL) including a gate electrode are formed on a substrate. A plurality of data lines(DL) defining a plurality of pixel regions are formed on a gate insulation layer. A plurality of common electrode lines are parallel to each data line on the gate insulation layer. A thin film transistor(42) comprises the gate insulation layer, an active layer(50), an ohmic contact layer, and source/drain electrodes(52a,52b). A first protection layer covers the upper side of the substrate with a thin film transistor.
摘要翻译：目的：提供一种数字X射线检测器及其制造方法，以便通过形成蘑菇结构来容易地控制后门效应。构成：在基板上形成包括栅电极的多条栅极线（GL）。在栅极绝缘层上形成限定多个像素区域的多条数据线（DL）。多个公共电极线平行于栅极绝缘层上的每个数据线。薄膜晶体管（42）包括栅极绝缘层，有源层（50），欧姆接触层和源极/漏极（52a，52b）。第一保护层用薄膜晶体管覆盖衬底的上侧。

47. 发明公开

KR1020100085516A 패턴 검사장치 失效
标题翻译：检查模式的方法
公开(公告)号：KR1020100085516A
公开(公告)日：2010-07-29
申请号：KR1020090004847
申请日：2009-01-21
申请人： (주)세현
发明人： 추대호
IPC分类号： H01L31/115 , G02F1/13 , G02F1/136
CPC分类号： G01T1/2018 , H01L31/115
摘要： PURPOSE: A method for inspecting patterns is provided to inspect an internal state of a fine pattern of a nono-size. CONSTITUTION: An X-ray generator(200) is arranged on the top of the substrate(10) in which a fine pattern is formed. The X-ray is provided in the substrate. An X-ray detector(300) is arranged to be corresponded to the X-ray generator and detects the X-ray passing through the fine pattern to inspect the internal state of the fine pattern.
摘要翻译：目的：提供一种检查图案的方法，以检查非尺寸精细图案的内部状态。构成：在基板（10）的顶部设置有X射线发生器（200），其中形成精细图案。 X射线设置在基板中。 X射线检测器（300）被配置为对应于X射线发生器，并且检测通过精细图案的X射线以检查精细图案的内部状态。

48. 发明公开

KR20100082498A Thin film transistor substrate for an x-ray detector and method of manufacturing the same 审中-公开
标题翻译：用于X射线探测器的薄膜晶体管基板及其制造方法
公开(公告)号：KR20100082498A
公开(公告)日：2010-07-19
申请号：KR20090001829
申请日：2009-01-09
申请人： ATLAIM CO LTD
发明人： CHOO DAE HO
IPC分类号： H01L29/786
CPC分类号： H01L27/14658 , H01L27/1214 , H01L27/14676 , H01L31/115
摘要： PURPOSE: A thin film transistor substrate for an X-ray detector and a method for manufacturing the same are provided to reduce a number of manufacturing processes by forming the lower electrode of an optical diode and a data line connected with a switching device using an identical metal layer. CONSTITUTION: A plurality of pixel regions arranged in a matrix shape is arranged on a substrate(110). A switching device(TFT) is formed in the pixel regions. An insulating layer(130) is formed on the upper side of the substrate to cover the switching device. A lower electrode(140) and a data line(DL) are formed on the upper side of the insulating layer. An identical metal layer is patterned to form the lower electrode and the data line.
摘要翻译：目的：提供一种用于X射线检测器的薄膜晶体管衬底及其制造方法，用于通过形成光二极管的下电极和与开关器件连接的数据线来减少多个制造工艺，使用相同的金属层。构成：以矩阵状排列的多个像素区域配置在基板（110）上。在像素区域中形成开关器件（TFT）。绝缘层（130）形成在基板的上侧以覆盖开关装置。在绝缘层的上侧形成下电极（140）和数据线（DL）。图案化相同的金属层以形成下电极和数据线。

49. 发明公开

KR1020090090164A 대면적 Ｘ선 검출장치의 제조 방법 无效
标题翻译：用于制造大面积X射线探测器的方法
公开(公告)号：KR1020090090164A
公开(公告)日：2009-08-25
申请号：KR1020080015471
申请日：2008-02-20
申请人： 주식회사바텍
发明人： 김일경 , 정헌용 , 송현진
IPC分类号： H01L31/115
CPC分类号： H01L31/115 , H01L31/085 , H01L31/18
摘要： A method for fabricating a large area x-ray detector is provided to make the contact of a sensor panel and a scintillator panel uniform by spreading out the top of the sensor panel to have a uniform thickness. In a method for fabricating a large area x-ray detector, a sensor panel(110) is prepared on a first support table(140). An adhesive is coated on the top of the sensor panel, and the top of the sensor panel in which the adhesive is coated is spread out by a knife bar(300) so that the adhesive layer(120) has a uniform thickness. The scintillator panel(130) is adhered in the upper side of the adhesive layer, and the knife bar is slid up and down controls the thickness of the adhesive layer.
摘要翻译：提供一种用于制造大面积X射线检测器的方法，通过将传感器面板的顶部展开以使厚度均匀，从而使传感器面板和闪烁体面板的接触均匀。在制造大面积X射线检测器的方法中，在第一支撑台（140）上准备传感器面板（110）。粘合剂被涂覆在传感器面板的顶部，并且传感器面板的其中涂覆有粘合剂的顶部由刀杆（300）展开，使得粘合剂层（120）具有均匀的厚度。闪烁体面板（130）粘附在粘合剂层的上侧，并且刀杆上下滑动来控制粘合剂层的厚度。

50. 发明公开

KR1020090090155A 대면적 Ｘ선 검출장치 및 그의 제조방법 有权
标题翻译：大面积X射线探测器及其制造方法
公开(公告)号：KR1020090090155A
公开(公告)日：2009-08-25
申请号：KR1020080015455
申请日：2008-02-20
申请人： 주식회사바텍
发明人： 김일경 , 정헌용 , 송현진
IPC分类号： G03B42/02 , H01L31/115 , A61B6/00
CPC分类号： G03B42/02 , A61B6/14 , G01T1/20 , H01L31/115
摘要： A large area x-rays detector and a manufacture method thereof are provided to omit a sealant manufacturing process by forming a dam at a rim part of a panel. A large area x-rays detector comprises a scintillator panel(130), a sensor panel(140), a dam(150), and a bonding layer(160). The scintillator panel converts the X-rays into the visible ray. The sensor panel comprises a plurality of photoelectric conversion elements. The sensor panel senses the visible ray. The dam is formed in a rim part of the sensor panel. The rim part of the sensor panel is unable to sense the visible ray. The bonding layer is formed in the dam inside. The scintillator panel and the sensor panel are welded with the bonding layer.
摘要翻译：提供了一种大面积X射线检测器及其制造方法，以通过在面板的边缘部分处形成坝来省略密封剂制造过程。大面积X射线检测器包括闪烁体面板（130），传感器面板（140），坝（150）和结合层（160）。闪烁体面板将X射线转换成可见光。传感器面板包括多个光电转换元件。传感器面板感测到可见光线。坝体形成在传感器面板的边缘部分。传感器面板的边缘部分无法感测到可见光线。接合层形成在坝内。闪烁体面板和传感器面板与接合层焊接。

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