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41. 发明公开

KR1020080071799A 포토마스크의 핀홀 결함 수정방법 无效
标题翻译：修复摄影胶片孔洞缺陷的方法
公开(公告)号：KR1020080071799A
公开(公告)日：2008-08-05
申请号：KR1020070010115
申请日：2007-01-31
申请人： 에스케이하이닉스 주식회사
发明人： 전준
IPC分类号： H01L21/027
CPC分类号： G03F1/72 , G03F1/84
摘要： A method for repairing a pin hole defect of a photo mask is provided to dramatically improve the accuracy of a defect repair by using an AFM(Atomic Force Microscope) tip. A first material layer including a defect of a pin hole(106) is formed on a substrate(100). A resist(108) is coated on the substrate. The resist corresponding to the defect of the pin hole is exposed by using an AFM tip(110). The exposed resist is developed to expose the defect of the pin hole. The first material layer is deposited on a region of the defect to repair the defect of the pin hole. An electron bean resist is used as the resist. Alternatively, a positive electron beam resist is used as the resist. Before the resist is coated on the substrate, information with respect to a coordinates of a defect position, a size and shape of the defect is acquired.
摘要翻译：提供修复光罩的针孔缺陷的方法，以通过使用AFM（原子力显微镜）尖端显着地提高缺陷修复的精度。在基板（100）上形成包括针孔（106）的缺陷的第一材料层。抗蚀剂（108）涂覆在基材上。通过使用AFM尖端（110）露出与销孔的缺陷相对应的抗蚀剂。曝光的抗蚀剂被开发以暴露针孔的缺陷。第一材料层沉积在缺陷的区域上以修复针孔的缺陷。使用电子束抗蚀剂作为抗蚀剂。或者，使用正电子束抗蚀剂作为抗蚀剂。在将抗蚀剂涂布在基板上之前，获取关于缺陷位置的坐标，缺陷的尺寸和形状的信息。

42. 发明公开

KR1020080032431A 바이너리 마스크의 결함수정방법 无效
标题翻译：修复二进制面板缺陷的方法
公开(公告)号：KR1020080032431A
公开(公告)日：2008-04-15
申请号：KR1020060098131
申请日：2006-10-09
申请人： 에스케이하이닉스 주식회사
发明人： 유지선
IPC分类号： H01L21/027
CPC分类号： G03F1/72 , G03F1/84
摘要： A method for repairing defects in a binary mask is provided to considerably reduce the time required for manufacturing the binary mask by rinsing defects generated on a quartz substrate using ultra pure water containing ozone which is capable of etching and rinsing impurities on the substrate at the same time. A method for repairing defects in a binary mask comprises the steps of: inspecting defects generated on the binary mask(420); repairing the defects of the binary mask by using laser or FIB(Focused Ion Beam) as supplying bromine gas and oxygen gas at the same time(450); and rinsing the binary mask having defects by using O3-UPW(Ultra Pure Water)(410).
摘要翻译：提供修复二进制掩模中的缺陷的方法，以显着减少使用含有臭氧的超纯水在石英基板上产生的缺陷来制造二进制掩模所需的时间，该臭氧能够在基板上蚀刻和漂洗杂质时间。修复二进制掩码中的缺陷的方法包括以下步骤：检查在二进制掩码（420）上产生的缺陷; 通过使用激光或FIB（聚焦离子束）同时供应溴气和氧气来修复二进制掩模的缺陷（450）; 并使用O3-UPW（超纯水）（410）冲洗具有缺陷的二进制掩模。

43. 发明授权

KR100818998B1 결함이 수정된 포토마스크 및 포토마스크의 결함 수정 방법 失效
标题翻译：缺陷修复光掩模和修复缺陷的方法
公开(公告)号：KR100818998B1
公开(公告)日：2008-04-02
申请号：KR1020060084251
申请日：2006-09-01
申请人： 삼성전자주식회사
发明人： 심홍석 , 성문규 , 이상현
IPC分类号： H01L21/027
CPC分类号： G03F1/72
摘要： 고강도의 팁으로 결함을 물리적으로 제거함으로써 결함이 수정된 포토마스크 및 결함 수정 방법이 제공된다. 본 발명의 일 실시예에 의한 포토마스크는 투명한 기판 상에 존재하는 결함이 고강도의 팁으로 물리적으로 제거되어 결함이 수정되고, 본 발명의 일 실시예에 의한 포토마스크의 결함 수정 방법은, 디프레션 결함이 발생된 포토마스크의 투명한 기판 상에, 디프레션 결함을 덮는 보호막을 형성하고, 보호막을 식각 마스크로 하여 포토마스크 투명한 기판을 소정의 깊이로 식각하고, 보호막 및 식각되지 않은 보호막 하부의 투명한 기판을 제거하는 것을 포함한다.
포토마스크, 결함 수정

44. 发明公开

KR1020080028066A ＤＰＳＳ 레이저를 이용한 마스크 결함 리페어장치 无效
标题翻译：使用二极管泵浦固体激光器修复掩模缺陷的装置
公开(公告)号：KR1020080028066A
公开(公告)日：2008-03-31
申请号：KR1020060093388
申请日：2006-09-26
申请人： 에스케이하이닉스 주식회사
发明人： 송판돌
IPC分类号： H01L21/027 , H01L21/02
CPC分类号： G03F1/72 , G03F7/70025 , G03F7/70433
摘要： An apparatus for repairing a mask defect using a DPSS(Diode Pumped Solid State) laser is provided to enhance the quality of a mask by improving a structure thereof. A laser output unit outputs a laser beam to repair a defect of a mask. A beam expander(115) expands the laser beam outputted from the laser output unit. A plurality of mirrors(120,130,150) are used for reflecting the expanded laser beam at various angles. An aperture(140) is used for adjusting a size of the laser beam. A lens is used for adjusting a focus of the laser beam to repair a defect generated from the mask. The laser output unit is a DPSS laser unit. A sensing unit is installed at an output side of the laser output unit to sense the output of the laser output unit.
摘要翻译：提供了使用DPSS（二极管泵浦固态）激光器修复掩模缺陷的装置，以通过改进其结构来提高掩模的质量。激光输出单元输出激光束以修复掩模的缺陷。扩束器（115）使从激光输出单元输出的激光束扩展。多个反射镜（120,130,150）用于以各种角度反射扩展的激光束。孔（140）用于调整激光束的尺寸。透镜用于调整激光束的焦点以修复由掩模产生的缺陷。激光输出单元是DPSS激光单元。感测单元安装在激光输出单元的输出侧以感测激光输出单元的输出。

45. 发明公开

KR1020080005718A 노광 마스크 패턴의 결함을 수리하는 방법 无效
标题翻译：修改版本图案缺陷的方法
公开(公告)号：KR1020080005718A
公开(公告)日：2008-01-15
申请号：KR1020060064402
申请日：2006-07-10
申请人： 에스케이하이닉스 주식회사
发明人： 이준석
IPC分类号： H01L21/027
CPC分类号： G03F1/72
摘要： A method for repairing a defect of an exposure mask pattern is provided to solve difficulties at the time of remanufacturing expensive equipment and an exposure mask requiring a long manufacturing time by repairing a damaged pattern part by a simple method. A method for repairing a defect of an exposure mask pattern includes the steps of: applying photo soldering resist onto a top part of a predetermined light shielding film pattern(12) formed on a transparent substrate(11); removing the photo soldering resist so that a step of the photo soldering resist is the same as that of the light shielding film pattern; partially exposing and developing a pattern part where the defect occurs; and thermal-curing the developed photo soldering resist. The transparent substrate is manufactured by quartz. The light shielding pattern is made of chrome. The photo soldering resist includes an epoxy resin based binding material. The photo soldering resist is a negative photo soldering resist.
摘要翻译：提供了修复曝光掩模图案的缺陷的方法，以通过简单的方法来修复昂贵的设备的再制造和需要较长制造时间的曝光掩模的困难，从而修复损坏的图案部分。一种修复曝光掩模图案的缺陷的方法包括以下步骤：将光焊剂涂覆在形成在透明基板（11）上的预定遮光膜图案（12）的顶部上; 除去光焊剂，使得光刻胶的步骤与遮光膜图案相同; 部分地暴露和发展出现缺陷的图案部分; 并热固化显影的光刻胶。透明基板由石英制成。遮光图案由铬制成。光电抗蚀剂包括基于环氧树脂的粘结材料。光刻抗蚀剂是负光阻焊剂。

46. 发明公开

KR1020080001472A 박막 증착을 위한 스퍼터링 장치 无效
标题翻译：用于沉积薄膜的喷射室
公开(公告)号：KR1020080001472A
公开(公告)日：2008-01-03
申请号：KR1020060059940
申请日：2006-06-29
申请人： 에스케이하이닉스 주식회사
发明人： 송판돌
IPC分类号： C23C14/34
CPC分类号： C23C14/042 , C23C14/185 , G03F1/72
摘要： A sputtering device for depositing a thin film is provided to deposit the thin film selectively at a specific position on a substrate. A sputtering device for depositing a thin film(300) comprises a support(310), a target(320), and a plate(410,420). The support supports a substrate(200). The target is corresponded to the substrate. The plate is moved at X and Y directions between the target and the substrate to change an exposed area of the substrate. The plate is formed by an aluminum material. The plate is moved by a stepping motor(430,440). An area which is exposed by the plate among surfaces of the substrate is changed by moving the plate at the X and Y directions by the stepping motor.
摘要翻译：提供了一种用于沉积薄膜的溅射装置，用于将薄膜选择性地沉积在基板上的特定位置。用于沉积薄膜（300）的溅射装置包括支撑（310），靶（320）和板（410,420）。支撑件支撑衬底（200）。目标对应于基板。板在X和Y方向上在靶和衬底之间移动以改变衬底的暴露面积。该板由铝材料形成。板由步进电机（430,440）移动。通过步进电机在X和Y方向上移动板来改变由板在表面之间暴露的区域。

47. 发明公开

KR1020080001463A 포토 마스크 수정 방법 无效
标题翻译：修复光电子的方法
公开(公告)号：KR1020080001463A
公开(公告)日：2008-01-03
申请号：KR1020060059931
申请日：2006-06-29
申请人： 에스케이하이닉스 주식회사
发明人： 하태중
IPC分类号： H01L21/027
CPC分类号： G03F1/72
摘要： A method for repairing a photo mask is provided to form a uniform photoresist pattern in an exposure process through the lowering of a transmittance by implanting ions into a defective pattern region. An irradiating process is performed to irradiate light onto a transparent substrate(300) having a plurality of light shielding layer patterns(321). A defective pattern region definition process is performed to define a defective pattern region for receiving the abnormal amount of light by detecting the amount of light. An ion implantation process is performed to normalize the amount of light penetrating the defective pattern region by implanting ions into the bad pattern region. The light shielding layer patterns are formed in chrome layer patterns.
摘要翻译：提供修复光掩模的方法，以通过将离子注入缺陷图案区域中通过降低透光率在曝光过程中形成均匀的光致抗蚀剂图案。进行照射处理以将光照射到具有多个遮光层图案（321）的透明基板（300）上。执行不良图案区域定义处理，以通过检测光量来限定用于接收异常光量的缺陷图案区域。执行离子注入工艺以通过将离子注入到不良图案区域来标准化穿透缺陷图案区域的光量。遮光层图案形成为铬层图案。

48. 发明公开

KR1020080001458A 포토마스크의 핀홀 제거방법 无效
标题翻译：在光电子中去除引线孔的方法
公开(公告)号：KR1020080001458A
公开(公告)日：2008-01-03
申请号：KR1020060059923
申请日：2006-06-29
申请人： 에스케이하이닉스 주식회사
发明人： 김희천
IPC分类号： H01L21/027
CPC分类号： G03F1/72 , G03F1/26
摘要： A method for removing a pin hole of a photo mask is provided to shorten a time for removing the pin hole by using a sputtering apparatus for depositing selectively chrome. A photo mask includes a transparent substrate having a cell and a frame region. A phase shift layer pattern and a light shielding layer pattern are formed on the transparent substrate. A method for removing a pin hole of the photo mask includes a process for depositing selectively the light shielding layer on a pin hole forming part of the frame region by using a sputtering apparatus. The sputtering apparatus includes a supporting plate for supporting the transparent substrate, a target facing the transparent substrate, a plate(410,420) arranged movably between the target and the transparent substrate in order to expose a constant region.
摘要翻译：提供了用于去除光掩模的针孔的方法，以通过使用用于沉积选择性铬的溅射装置来缩短用于移除针孔的时间。光掩模包括具有单元和框架区域的透明基板。在透明基板上形成相移层图案和遮光层图案。去除光掩模的针孔的方法包括通过使用溅射装置选择性地将遮光层沉积在形成框架区域的一部分的针孔上的工艺。溅射装置包括用于支撑透明基板的支撑板，面对透明基板的目标板，可移动地设置在目标和透明基板之间以便暴露恒定区域的板（410,420）。

49. 发明公开

KR1020080001023A 극자외선 반사형 블랭크 마스크와 포토마스크 및 그제조방법 无效
标题翻译：反射型EUV空白掩模及其制造方法
公开(公告)号：KR1020080001023A
公开(公告)日：2008-01-03
申请号：KR1020060059019
申请日：2006-06-29
申请人： 주식회사 에스앤에스텍
发明人： 남기수 , 차한선 , 강형종
IPC分类号： H01L21/027
CPC分类号： G03F1/24 , G03F1/52 , G03F1/54 , G03F1/72 , G03F1/80 , H01L21/0332 , H01L21/0337
摘要： A reflective type EUV(Extreme Ultra-Violet) blank mask and a photo mask and a manufacturing method thereof are provided to reduce defects of patterns by reducing defects thereof in exposure and developing processes. A plurality of reflective layers(2) are alternately stacked on a transparent layer(1). The reflective layers are formed with two or more kinds of layers. A capping layer(3) is formed on an upper surface of the reflective layer. A buffer layer(4) is formed on an upper surface of the capping layer. An absorption layer(5) is formed on an upper surface of the buffer layer. A hard mask layer(6) is formed on an upper surface of the absorption layer. The hard mask layer is formed with layers having two different levels of reflectance in one of inspection waves of 193 nm, 248 nm, 257 nm, 365 nm, and 488 nm, or is formed with stack structure of continuous layers having continuous changes.
摘要翻译：提供反射型EUV（Extreme Ultra Violet）空白掩模和光掩模及其制造方法，以通过减少曝光和显影过程中的缺陷来减少图案的缺陷。多个反射层（2）交替堆叠在透明层（1）上。反射层由两层或多层形成。覆盖层（3）形成在反射层的上表面上。在覆盖层的上表面上形成缓冲层（4）。在缓冲层的上表面上形成吸收层（5）。在吸收层的上表面上形成有硬掩模层（6）。硬掩模层由在193nm，248nm，257nm，365nm和488nm的检测波之一中具有两个不同反射率的层形成，或者形成为具有连续变化的连续层的堆叠结构。

50. 发明授权

KR100791338B1 레지스트레이션이 보정된 포토마스크 및 포토마스크의레지스트레이션 보정 방법 有权
标题翻译：注册校正光电和校正光电子注册的方法
公开(公告)号：KR100791338B1
公开(公告)日：2008-01-03
申请号：KR1020060074356
申请日：2006-08-07
申请人： 삼성전자주식회사
发明人： 이명수 , 배석종 , 이정훈 , 최성운 , 김병국
IPC分类号： H01L21/027
CPC分类号： G03F1/72 , G03F1/38 , G03F1/60 , G03F1/144
摘要： A photomask with corrected registration is provided to reduce the fabricating cost of a photomask and a semiconductor device and shorten an interval of fabrication time by reprocessing and using a completed photomask according to a registration error. An optical pattern is formed on one surface of a photomask substrate. Laser is irradiated to the inside of the photomask substrate to form a plurality of stress generating parts(220) capable of corresponding to a registration error of the optical pattern. The optical pattern can physically be transferred by the stress generating parts to correct the registration error of the optical pattern.
摘要翻译：提供具有校正配准的光掩模，以减少光掩模和半导体器件的制造成本，并且通过根据注册误差重新处理和使用完成的光掩模来缩短制造时间的间隔。在光掩模基板的一个表面上形成光学图案。激光照射到光掩模基板的内部，以形成能够对应于光学图案的配准误差的多个应力产生部件（220）。光学图案可以通过应力产生部件物理地传递，以校正光学图案的配准误差。

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