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31. 发明公开

KR1020090109492A 다계조 포토마스크, 다계조 포토마스크의 제조 방법, 패턴 전사 방법, 및 박막 트랜지스터의 제조 방법 有权
标题翻译：多灰度光栅，多灰度光刻胶的制造方法，图案转印方法及薄膜晶体管的制造方法
公开(公告)号：KR1020090109492A
公开(公告)日：2009-10-20
申请号：KR1020090032224
申请日：2009-04-14
申请人： 호야 가부시키가이샤
发明人： 사노미찌아끼 , 나까니시가쯔히꼬 , 요시다고이찌로
IPC分类号： G03F1/54 , G03F1/26 , G03F1/58
CPC分类号： G03F1/54 , G02F1/133509 , G03F1/144 , G03F1/22 , G03F1/32 , G03F1/72 , G03F1/80
摘要： PURPOSE: A gray-scale photomask is provided to obtain resist pattern with profile at edge portion and improve production stability of TFT. CONSTITUTION: A method for forming gray-scale photomask comprises: a step of forming a first semi-transmission film and second half-transmission film on a transparent substrate (11); a step of patterning; and a step of forming transfer pattern containing light-transmitting part, first half light-transmitting part (12), and second half light-transmitting part.
摘要翻译：目的：提供灰度光掩模，以获得边缘部分的光刻胶图案，提高TFT的生产稳定性。构成：形成灰度光掩模的方法包括：在透明基板（11）上形成第一半透膜和第二半透膜的步骤; 图案化步骤以及形成包含透光部，第一半透光部（12）和第二半透光部的转印图案的工序。

32. 发明公开

KR1020090106900A 포토마스크의 스크래치 제거방법 无效
标题翻译：在光子中移除电缆的方法
公开(公告)号：KR1020090106900A
公开(公告)日：2009-10-12
申请号：KR1020080032294
申请日：2008-04-07
申请人： 에스케이하이닉스 주식회사
发明人： 이혜미
IPC分类号： H01L21/027 , H01L21/304
CPC分类号： G03F1/72
摘要： PURPOSE: A method for removing a scratch of a photomask is provided to remove the scratch by planarizing a rear side of a transmission substrate with the scratch. CONSTITUTION: Patterns(220) are arranged in a front side of a photomask. A scratch is generated in a rear side of the photomask. The photomask is surrounded with a resist layer. The resist layer on the rear side of the photomask is exposed. The rear side of the photomask with the scratch is exposed by developing the exposed resist layer. The scratch is removed by polishing the rear side of the exposed photomask.
摘要翻译：目的：提供一种用于去除光掩模划痕的方法，以通过刮擦来平坦化传输基板的后侧来去除划痕。构成：图案（220）布置在光掩模的正面。在光掩模的后侧产生划痕。光掩模被抗蚀剂层包围。曝光光掩模后侧的抗蚀剂层。通过显影曝光的抗蚀剂层来暴露具有划痕的光掩模的后侧。通过抛光曝光的光掩模的后侧来去除划痕。

33. 发明公开

KR1020090103203A 포토마스크의 결함 제거방법 无效
标题翻译：去除光刻胶中缺陷的方法
公开(公告)号：KR1020090103203A
公开(公告)日：2009-10-01
申请号：KR1020080028639
申请日：2008-03-27
申请人： 에스케이하이닉스 주식회사
发明人： 강재성
IPC分类号： H01L21/027
CPC分类号： G03F1/72 , G03F1/82 , G03F1/84
摘要： PURPOSE: A method of removing defect in photomask is provided to reduce cohesion of a defect without the damage of the transparent substrate by the ultra fast pulse laser. CONSTITUTION: The method of removing defect in photomask comprises as follows. The defect site within the photomask(100) having the pattern(120) on the transparent substrate(110) is inspected. The ultra fast pulse laser is irradiated to the tested deformity. The deformity to which the ultra fast pulse laser is irradiated is cleaned by the cleaning solution. The ultra fast pulse laser is irradiated as the intensity which weakens the cohesion of a defect.
摘要翻译：目的：提供去除光掩模缺陷的方法，以减少缺陷的凝聚力，而不会因超快速脉冲激光而损坏透明基板。构成：光掩模去除缺陷的方法如下。检查在透明基板（110）上具有图案（120）的光掩模（100）内的缺陷部位。将超快脉冲激光照射到测试的畸形。用超声波激光照射的畸形由清洗液清洗。照射超快脉冲激光作为削弱缺陷内聚力的强度。

34. 发明授权

KR100911595B1 마스크 블랭크 정보 취득방법 및 시스템, 마스크 블랭크 정보 제공방법, 전사 마스크 제작지원 및 제조방법, 그리고 마스크 블랭크 제조방법 및 제공방법 有权
标题翻译：用于获得掩蔽层信息的方法和系统，用于提供掩蔽层信息的方法，用于支持传输掩模制造和制造传输掩蔽的方法，以及制造和提供掩蔽层的方法
公开(公告)号：KR100911595B1
公开(公告)日：2009-08-07
申请号：KR1020067020968
申请日：2005-03-07
申请人： 호야 가부시키가이샤
发明人： 이시다,히로유키 , 아이야마,타미야 , 마루야마,코이치
IPC分类号： H01L21/02
CPC分类号： G03F1/72 , C03C17/3607 , C03C17/3626 , C03C17/3649 , C03C17/3665 , C03C17/38 , C03C2218/355 , G03F1/84 , Y10T428/31616
摘要： 기판 상에 적어도 전사패턴이 되는 박막을 포함하는 복수의 막이 형성된 마스크 블랭크의 레지스트막에 대하여, 패턴 데이타에 따라서 패턴을 형성할 때, 패턴과 대조하기 위한 막정보를, 복수의 막 각각에 관하여 취득한다.

35. 发明公开

KR1020090072800A 포토마스크의 제조방법 无效
标题翻译：制作光电子的方法
公开(公告)号：KR1020090072800A
公开(公告)日：2009-07-02
申请号：KR1020070141024
申请日：2007-12-28
申请人： 에스케이하이닉스 주식회사
发明人： 김현영
IPC分类号： H01L21/027
CPC分类号： G03F1/72 , G01N2021/95676 , G03F1/84
摘要： A manufacturing method of a photo mask is provided to reduce a manufacturing cost and a manufacturing cycle by performing a removing process about a defect due to an error pattern on a semiconductor substrate without a complex defect removing process. A phase shift pattern and a light shielding pattern are formed on a substrate. A generation of a resident defect is detected in the substrate(210). The resident defect is predicted whether a defect is performed in the semiconductor substrate(230). A process for removing the defect is performed in case the resident defect is performed in the semiconductor substrate. An AIMS(Aerial Image Measurement System) image is measured about the substrate(250). The defect is not performed in the semiconductor substrate in case a critical dimension difference is less than 5% of a critical dimension of a normal pattern.
摘要翻译：提供了一种光掩模的制造方法，通过对半导体衬底上的错误图案进行的缺陷的去除处理，而不需要复杂的缺陷去除处理，来降低制造成本和制造周期。在基板上形成相移图案和遮光图案。在衬底（210）中检测到驻留缺陷的一代。预测驻留缺陷是否在半导体衬底（230）中执行缺陷。在半导体衬底中执行常规缺陷的情况下，执行用于去除缺陷的工艺。围绕基板测量AIMS（空中图像测量系统）图像（250）。在临界尺寸差小于正常图案的临界尺寸的5％的情况下，在半导体衬底中不执行缺陷。

36. 发明公开

KR1020090029435A 포토마스크의 제조 방법 失效
标题翻译：用于制作照片掩模的方法
公开(公告)号：KR1020090029435A
公开(公告)日：2009-03-23
申请号：KR1020070094655
申请日：2007-09-18
申请人： 에스케이하이닉스 주식회사
发明人： 하태중
IPC分类号： H01L21/027
CPC分类号： G03F1/26 , G01N2021/95676 , G03F1/72
摘要： A manufacturing method of the photomask is provided to reduce the manufacturing cost of the photomask by patterning the hard mask layer as a light shield layer. A manufacturing method of photomask comprises the step of successively forming a light shield layer and a hard mask layer on a transparent substrate(100); the step of forming a preliminary hard mask pattern; the step for forming the hard mask pattern; the step for forming a light shield pattern(111). The preliminary hard mask pattern is formed by etching the hard mask layer by using a resist pattern as an etching mask. The preliminary hard mask pattern is formed to expose the light shield layer. The light shield pattern is formed by patterning the light shield layer using a hard mask pattern as an etching mask.
摘要翻译：提供光掩模的制造方法，以通过将硬掩模层图案化为遮光层来降低光掩模的制造成本。光掩模的制造方法包括在透明基板（100）上依次形成遮光层和硬掩模层的步骤。形成初步硬掩模图案的步骤; 用于形成硬掩模图案的步骤; 用于形成遮光图案（111）的步骤。通过使用抗蚀剂图案作为蚀刻掩模来蚀刻硬掩模层来形成初步硬掩模图案。形成初步硬掩模图案以露出遮光层。通过使用硬掩模图案作为蚀刻掩模对遮光层进行图案化来形成遮光图案。

37. 发明公开

KR1020080114419A 웨이퍼 결함을 억제하는 포토마스크 및 제조 방법, 이를이용한 노광 방법 无效
标题翻译：用于抑制失水的掩模，其制造方法和使用其的曝光方法
公开(公告)号：KR1020080114419A
公开(公告)日：2008-12-31
申请号：KR1020070063949
申请日：2007-06-27
申请人： 에스케이하이닉스 주식회사
发明人： 이상이
IPC分类号： H01L21/027
CPC分类号： H01L21/0274 , G03F1/72 , G03F7/2063 , H01L21/0337
摘要： A photo mask preventing wafer defects and manufacturing method thereof are provided to increase a manufacturing efficiency of a photo mask by preventing defects from transferring on a wafer. A photo mask preventing wafer defects includes a transparent substrate(110), mask patterns(121), edge patterns(127), and a backplane light-shielding layer pattern(200). The substrate includes a chip area of an inner side and a frame(102) part of a chip area outer block. The mask pattern is formed in the chip area of a substrate front surface. The edge pattern is formed on the frame part of the substrate front surface. The backplane light-shielding layer pattern is formed on a backplane of the substrate corresponding to the frame part.
摘要翻译：提供防止晶片缺陷的光掩模及其制造方法，以通过防止在晶片上转印的缺陷来提高光掩模的制造效率。防止晶片缺陷的光掩模包括透明基板（110），掩模图案（121），边缘图案（127）和背板遮光层图案（200）。衬底包括芯片区域外部块的内侧的芯片区域和框架（102）的一部分。掩模图案形成在基板前表面的芯片区域中。边缘图案形成在基板前表面的框架部分上。背板遮光层图案形成在对应于框架部分的基板的背板上。

38. 发明公开

KR1020080112167A ＥＵＶ 마스크 및 ＥＵＶ 마스크의 복구 방법 有权
标题翻译： EUV掩模和修复EUV掩模的方法
公开(公告)号：KR1020080112167A
公开(公告)日：2008-12-24
申请号：KR1020080058644
申请日：2008-06-20
申请人： 어드밴스드 마스크 테크놀로지 센터 게엠바하 운트 코 카게
发明人： 홀펠드,크리스티안
IPC分类号： H01L21/027
CPC分类号： G03F1/24 , B82Y10/00 , B82Y40/00 , G03F1/72
摘要： A recovering method of a EUV mask and a EUV mask are provided to restore defect generated in manufacturing a substrate or a multi-layered thin film of the EUV mask accurately and simply and become non-destructive. An EUV mask(10) comprises a substrate(11), a reflective multi-layered thin film(12), a phase shift material(13), and a masking material(14). The reflective multi-layered thin film exists in the substrate upside. The phase shift material is arranged in a first part(111) of one or more substrates on the multi-layered thin film. The masking material comes under a mask pattern of a EUV mask. The masking material is arranged in a second part of substrate on the multi-layered thin film.
摘要翻译：提供EUV掩模和EUV掩模的恢复方法，以准确且简单地恢复制造EUV掩模的基板或多层薄膜所产生的缺陷，并且变得非破坏性。 EUV掩模（10）包括基板（11），反射多层薄膜（12），相移材料（13）和掩模材料（14）。反射性多层薄膜存在于基板的上侧。相移材料布置在多层薄膜上的一个或多个基板的第一部分（111）中。掩模材料处于EUV掩模的掩模图案之下。掩模材料布置在多层薄膜上的基板的第二部分中。

39. 发明公开

KR1020080092551A 웨이퍼 노광 방법 및 장비 无效
标题翻译：用于防潮的方法和装置
公开(公告)号：KR1020080092551A
公开(公告)日：2008-10-16
申请号：KR1020070035996
申请日：2007-04-12
申请人： 에스케이하이닉스 주식회사
发明人： 조병호 , 안영배
IPC分类号： H01L21/027
CPC分类号： H01L21/0274 , G03F1/72 , G03F1/84 , G03F7/70608 , G03F7/70616 , G03F7/7065
摘要： A method and apparatus for exposing a wafer are provided to prevent wafer contamination due to a pattern defect of an edge chip die by implementing a uniform effective focus distribution over the whole region of the wafer. A test exposing is performed on an initial test wafer(101). An exposure defect level per a region with respect to the test wafer is measured. A wafer flatness control level for compensating an exposure defect is extracted(102). The process wafer is mounted on a wafer stage of an exposure equipment so as to corresponding to the flatness control level and a height of an edge section of the process wafer is varied based on a height of the center of the process wafer(103). An exposure light source is irradiated to the mounted process wafer to expose it(104). The exposure defect level is obtained by measuring a wafer bit map on the test wafer. The wafer flatness control level is extracted from a defect generation level at an edge region of the wafer bit map.
摘要翻译：提供用于暴露晶片的方法和装置，以通过在晶片的整个区域上实现均匀的有效聚焦分布来防止由于边缘芯片裸片的图案缺陷引起的晶片污染。在初始测试晶片（101）上执行测试曝光。测量每个区域相对于测试晶片的曝光缺陷水平。提取用于补偿曝光缺陷的晶片平面度控制电平（102）。处理晶片安装在曝光设备的晶片台上，以对应于平坦度控制水平，并且基于处理晶片（103）的中心的高度改变处理晶片的边缘部分的高度。将曝光光源照射到所安装的处理晶片以使其曝光（104）。通过测量测试晶片上的晶片位图来获得曝光缺陷水平。从晶片位图的边缘区域的缺陷产生电平提取晶片平坦度控制电平。

40. 发明公开

KR1020080089269A 그레이톤 마스크의 결함 수정 방법, 그레이톤 마스크의제조 방법 및 그레이톤 마스크와 패턴 전사 방법 有权
标题翻译：灰色掩模缺陷校正方法，灰色掩模制造方法和灰色掩模，以及图案转移方法
公开(公告)号：KR1020080089269A
公开(公告)日：2008-10-06
申请号：KR1020080029079
申请日：2008-03-28
申请人： 호야 가부시키가이샤
发明人： 사노미찌아끼
IPC分类号： H01L21/027 , H01L29/786
CPC分类号： G03F1/72 , G03F1/144
摘要： A gray tone mask defect correction method, a gray tone mask manufacturing method, a gray tone mask, and a pattern transfer method are provided to suppress the reduction of the transmitting amount of light by forming a gap between a correction layer and a circumferential part of a defect. A gray tone mask defect correction method includes a process for forming resist patterns having gradually or continuously different thicknesses on a transferring target layer by using a light shielding part(21) for shielding exposure light, a transmitting part for transmitting the exposure light, and a semi-transmitting part(23) for reducing the transmitting amount of exposure light. The semi-transmitting part is formed with a semi-transmitting layer. The gray tone mask defect correction method further includes a process for defining a defective region in the semi-transmitting part and a process for forming a correction layer in a region including the defective region. The circumferential part of the correction layer has the transmitting amount of exposure light greater than the center part of the correction layer.
摘要翻译：提供灰色调掩模缺陷校正方法，灰度色调掩模制造方法，灰度色调掩模和图案转印方法，以通过在校正层和周边部分之间形成间隙来抑制光的透过量的减少一个缺陷。灰色调掩模缺陷校正方法包括通过使用用于遮蔽曝光光的遮光部分（21）形成在转印目标层上具有逐渐或连续不同厚度的抗蚀剂图案的工艺，用于透射曝光光的透射部分和半透射部分（23），用于减少曝光光的透射量。半透射部分形成有半透射层。灰度色调掩模缺陷校正方法还包括用于限定半透射部分中的缺陷区域的处理和在包括缺陷区域的区域中形成校正层的处理。校正层的圆周部分具有大于校正层的中心部分的曝光光的透射量。

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