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    • 25. 发明公开
    • 박막 트랜지스터 기판 및 이의 제조 방법
    • 薄膜晶体管基板及其制造方法
    • KR1020080045502A
    • 2008-05-23
    • KR1020060114702
    • 2006-11-20
    • 삼성디스플레이 주식회사
    • 정종현이병진박홍식홍선영김봉균신원석
    • G02F1/136
    • H01L27/1288G02F1/136227H01L27/1214
    • A TFT(Thin Film Transistor) substrate and a method for manufacturing the same are provided to form a pixel electrode using zinc oxide to reduce the manufacturing cost and easily manufacture the TFT substrate using a lift-off method. A TFT substrate includes a gate line, a data line, a passivation layer pattern, and a pixel electrode(82). The gate line is formed on an insulating substrate(10) and includes a gate electrode(24). The data line is formed on the gate line and includes a source electrode(65) and a drain electrode(66). The passivation layer pattern is formed on the data line and exposes a part of the drain electrode and the pixel electrode. The pixel electrode is electrically connected to the drain electrode and includes zinc oxide.
    • 提供TFT(薄膜晶体管)基板及其制造方法以形成使用氧化锌的像素电极,以降低制造成本,并且使用剥离方法容易地制造TFT基板。 TFT基板包括栅极线,数据线,钝化层图案和像素电极(82)。 栅极线形成在绝缘基板(10)上并且包括栅电极(24)。 数据线形成在栅极线上并且包括源电极(65)和漏电极(66)。 钝化层图案形成在数据线上,露出一部分漏电极和像素电极。 像素电极电连接到漏电极并且包括氧化锌。
    • 26. 发明公开
    • 어레이 기판의 제조방법, 어레이 기판 및 이를 갖는표시장치
    • 制造显示基板,显示基板和具有该基板的显示装置的方法
    • KR1020080008736A
    • 2008-01-24
    • KR1020060068341
    • 2006-07-21
    • 삼성디스플레이 주식회사
    • 정종현박홍식윤주애홍선영김봉균신원석정두희이병진
    • H01L29/786G02F1/133G02F1/136
    • H01L27/124G02F1/136286G02F2001/136231H01L27/1288H01L27/1214
    • A method for manufacturing an array substrate and a display apparatus having the same are provided to prevent undercut at a lower portion of a contact part by protecting semiconductor patterns having a photoresist pattern in an etching and an ashing. A display apparatus includes an insulation substrate(120), a thin film transistor(155), a contact electrode, and a pixel electrode. The thin film transistor includes a control electrode on the insulation substrate, a semiconductor pattern on the control electrode, a first electrode on the semiconductor pattern, and a second electrode apart from the first electrode. The contact electrode includes a contact part and an under cut part. The contact part which is electrically connected to the second electrode, exposes partially the semiconductor pattern. The under cut part electrically connected to the contact part covers the semiconductor pattern. The pixel electrode is electrically connected to the under cut part through the contact part.
    • 提供阵列基板的制造方法和具有该方法的显示装置,以通过在蚀刻和灰化中保护具有光致抗蚀剂图案的半导体图案来防止接触部分的下部的底切。 显示装置包括绝缘基板(120),薄膜晶体管(155),接触电极和像素电极。 薄膜晶体管包括绝缘基板上的控制电极,控制电极上的半导体图案,半导体图案上的第一电极和与第一电极分开的第二电极。 接触电极包括接触部分和下切割部分。 电连接到第二电极的接触部分部分地暴露半导体图案。 电连接到接触部分的下切割部分覆盖半导体图案。 像素电极通过接触部分电连接到下切割部分。