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    • 14. 发明授权
    • 반도체 소자의 양자점 형성 방법
    • 一种形成半导体器件量子的方法
    • KR100268936B1
    • 2000-10-16
    • KR1019970069281
    • 1997-12-16
    • 현대반도체 주식회사
    • 김기범윤태식권장연
    • H01L21/82
    • B82Y30/00B82Y10/00G11C2216/08H01L29/0665H01L29/127H01L29/66439H01L29/66469H01L29/7613Y10S977/774Y10S977/89Y10S977/895Y10S977/937
    • PURPOSE: A method for forming a quantum dot of a semiconductor device is provided to apply the device as a SET component as well as light emitting devices in the optical field by forming quantum dots which are small and relatively uniform. CONSTITUTION: The method includes following steps. At the first step, an insulator layer(1,3) is formed on a substrate. At the second step, a conductive layer(2) is formed on the insulator layer. At the last step, heat processing operation is perform to accumulate the conductive layer. The insulator layer is made of a silicon oxide layer, and the conductive layer is formed from one of a group including Si, Ge, Si(1-x)Ge(x), Al, Au, Cu, Pt, Cr, Ru, Ta, or Si alloy(Si(1-x)-metal(x)), or alloy of the preceding materials and Ge(Ge(1-x)-metal(x)), or alloy of the preceding materials(metal(1-x)-metal(x)). The heat processing operation is performed under a vacuum environment of N2 environment.
    • 目的:提供一种用于形成半导体器件的量子点的方法,通过形成小而相对均匀的量子点,将该器件作为SET组件以及光场中的发光器件。 规定:该方法包括以下步骤。 在第一步骤中,在衬底上形成绝缘体层(1,3)。 在第二步骤中,在绝缘体层上形成导电层(2)。 在最后一步,进行热处理操作以积聚导电层。 绝缘体层由氧化硅层构成,导电层由Si,Ge,Si(1-x)Ge(x),Al,Au,Cu,Pt,Cr,Ru, (Si(1-x) - 金属(x))或前述材料与Ge(Ge(1-x) - 金属(x))的合金或前述材料(金属( 1-X) - 金属(X))。 热处理操作在N2环境的真空环境下进行。
    • 19. 发明授权
    • 카본 나노튜브의 분리방법 및 분산액
    • 카본나노튜브의분리방법및분산액
    • KR100875392B1
    • 2008-12-23
    • KR1020067027774
    • 2005-07-29
    • 고쿠리쯔 다이가쿠 호징 츠쿠바 다이가쿠
    • 아카사카다케시와카하라다카츠구마에다유타카
    • C01B31/02B82B3/00B82Y40/00
    • B82Y30/00Y10S977/751Y10S977/842Y10S977/882Y10S977/895
    • A method of realizing selective separation of metallic single-walled carbon nanotubes and semiconducting carbon nanotubes from bundled carbon nanotubes; and obtaining of metallic single-walled carbon nanotubes separated at high purity through the above method. Metallic single-walled carbon nanotubes are dispersed one by one from bundled carbon nanotubes not only by the use of a difference in interaction with amine between metallic single-walled carbon nanotubes and semiconducting carbon nanotubes due to a difference in electrical properties between metallic single-walled carbon nanotubes and semiconducting carbon nanotubes but also by the use of the fact that an amine is an important factor in SWNTs separation. The thus dispersed carbon nanotubes are subjected to centrifugation, thereby attaining separation from non-dispersed semiconducting carbon nanotubes.
    • 一种实现金属单壁碳纳米管和半导体碳纳米管与成束碳纳米管选择性分离的方法, 并通过上述方法获得以高纯度分离的金属单壁碳纳米管。 金属单壁碳纳米管不仅通过使用与金属单壁碳纳米管和半导体碳纳米管之间的胺相互作用的差异而由成束的碳纳米管一个接一个地分散,这是由于金属单壁 碳纳米管和半导体碳纳米管,而且还通过使用胺是SWNT分离中的重要因素这一事实。 如此分散的碳纳米管进行离心分离,从而与未分散的半导体碳纳米管分离。