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    • 11. 发明公开
    • 플라즈마를 이용한 유해가스 처리장치
    • 用于使用等离子体处理危险气体的装置
    • KR1020030077793A
    • 2003-10-04
    • KR1020020016687
    • 2002-03-27
    • 최경수고찬규
    • 최경수고찬규박동화고동윤
    • B01D53/32
    • B01D53/323B01D2258/0216B01D2259/818H05H1/24H05H2245/121
    • PURPOSE: Provided is a hazardous gas treatment apparatus using high temperature zone of plasma. CONSTITUTION: The apparatus comprises an anode member(70) having a reaction room therein, in which at least 1000°C of plasma is generated and hazardous gas is treated by the plasma, a cathode assembly(20) having an upper end outside of the reaction room and a lower end inside of the reaction room, wherein plasma is generated by direct current arc discharge between the lower end of the cathode assembly(20) and the anode member(70), a gas guide unit(40,50,60) surrounding a lower portion of the cathode assembly(20), and an upper portion and outer side surface of the anode member(70) and having a gas distributing room therein for distributing harmful gas around the anode member(70) before the hazardous gas is introduced into the reaction room, wherein the gas guide unit(40,50,60) has at least one plasma gas passage way, and the anode member(70) has a hazardous gas passage for introducing hazardous gas to the reaction room therethrough, a treated gas passage for exhausting treated gas, and a cooling water passage.
    • 目的:提供使用等离子体高温区的危险气体处理装置。 构成:该装置包括在其中具有反应室的阳极构件(70),其中产生至少1000℃的等离子体并且有害气体被等离子体处理;阴极组件(20),其具有位于 反应室和反应室内的下端,其中通过在阴极组件(20)的下端和阳极部件(70)之间的直流电弧放电产生等离子体,气体引导单元(40,50,60 )和阳极部件(70)的上部和外侧表面,并且在其中具有气体分配室,用于在危险气体之前在阳极部件(70)周围分布有害气体 引入到反应室中,其中气体引导单元(40,50,60)具有至少一个等离子体气体通道,并且阳极部件(70)具有用于将有害气体引入反应室的危险气体通道, 用于排出处理气体的经处理气体通道, 冷却水通道。
    • 12. 发明公开
    • 고온 플라즈마를 이용한 다이옥신 및 분진 제거방법 및 그장치
    • 使用高温等离子体去除二氧化铅和粉尘的方法和装置
    • KR1020030067241A
    • 2003-08-14
    • KR1020020007143
    • 2002-02-07
    • 주식회사 유민이엔씨
    • 김신도김종호유애권
    • B01D53/32
    • A62D3/19A62D2101/22A62D2101/28B01D53/32B01D53/50B01D53/52B01D53/70B01D2257/302B01D2257/304B01D2259/818F23G7/065F23G2204/201F23J15/04F23J15/06F23J2215/301F23J2219/80H05H1/28H05H2245/121
    • PURPOSE: A method and an apparatus for removing dioxin and dust using high temperature plasma are provided to prevent resynthesis of dioxin or production of nitrogen oxides in the post process and clean various environmental materials contained in flue gas by promptly cooling the flue gas after burning the flue gas using plasma. CONSTITUTION: The method for removing dioxin and dust using high temperature plasma comprises decomposition step(100) of thermochemically breaking flue gas that is produced in an incinerator of incineration facility and contains dioxin, soot, dust and incompletely burnt materials using high temperature plasma; cooling and cleaning step(200) of rapidly cooling high temperature flue gas generated in the decomposition step(100) and cleaning contaminants contained in the flue gas at the same time; moisture removing step(300) of removing moisture contained in the flue gas cooled in the cooling and cleaning step(200); and cooled wastewater drain step(400) of discharging cooling water used in the cooling and cleaning step(200) and cooled wastewater condensed in the moisture removing step(300), wherein temperature of the decomposition step(100) is maintained to 900 deg.C or more using high temperature plasma, and wherein temperature of the cooling and cleaning step(200) is promptly lowered to 200 deg.C or less using sprayed cooling water.
    • 目的:提供使用高温等离子体去除二恶英和粉尘的方法和设备,以防止后处理中二恶英的再合成或氮氧化物的生成,并清洁烟道气中所含的各种环境物质,燃烧后立即冷却烟道气 使用等离子体的烟气。 构成:使用高温等离子体除去二恶英和粉尘的方法包括在焚烧设备的焚烧炉中产生的热化学烟气的分解步骤(100),并使用高温等离子体包含二恶英,烟灰,粉尘和不完全燃烧的材料; 在分解步骤(100)中产生的快速冷却高温烟道气的同时清洗废气中的污染物的冷却和清洁步骤(200); 去除在冷却和清洁步骤(200)中冷却的烟道气中所含的水分的除湿步骤(300); 以及冷却和清洁步骤(200)中使用的冷却水的冷却废水排放步骤(400)和在除湿步骤(300)中冷凝的冷却废水,其中分解步骤(100)的温度保持在900℃。 C以上的高温等离子体,使用喷雾冷却水将冷却和清洁步骤(200)的温度迅速降至200℃或更低。
    • 13. 发明公开
    • 비열 소프트 플라즈마 세정
    • 比热软式等离子清洗
    • KR1020170106363A
    • 2017-09-20
    • KR1020177021732
    • 2016-01-22
    • 찬, 치아 선
    • 찬,치아선
    • H01J37/32
    • H01J37/32623B08B7/0035H01J37/32H01J37/3244H01J37/32532H01J37/32541H01J37/32577H01J37/32825H01J2237/335H01L21/67017H05H2245/121
    • 본발명은가이드식소프트-플라즈마세정(Guided Soft-Plasma Cleaning : G-SPC)(30)을포함하는소프트플라즈마세정(SPC) 시스템(30, 130, 230)을제공한다. SPC 시스템은비열(non-thermal)이고, 저온프로세스이며, 대기압에서, 공기및 액체매체모두에서작동할수 있다. 일실시예에서, 공급원료가스(40)가공급되어세정챔버(34) 내에방전유체(50)를제공한다. 플라즈마가이딩및 증폭컴포넌트(52)는가공물(32) 위의큰 어블레이션(ablation) 영역을커버하도록방전유체를가이드및 확장시킴으로써, 이온및 전자충격손상또는에칭을또한억제한다. 플라즈마가이딩및 증폭컴포넌트(52)는유전체플레이트또는튜브(37, 56, 58)로형성될수 있으며, 각각의유전체는개구(37a, 56a, 58a)를갖는다. 세정챔버내의전기장및 이온에너지는 SPC 동안플라즈마손상을억제하기위해플로팅전극(160, 160a)을통해부가적으로제어될수 있다
    • 本发明提供了一种软等离子体清洁(SPC)系统30,130,230,其包括引导式软等离子体清洁(G-SPC) SPC系统是一种非热能,低温工艺,可以在大气压和空气和液体介质中工作。 在一个实施例中,原料气体40被处理以在清洁室34内提供排放流体50。 等离子体引导和放大部件52也被抑制,和离子蚀刻或损坏的电子撞击由所述引导件和延伸的流体排出以覆盖大的消融(烧蚀)在所述工件(32)的区域。 等离子体引导和放大部件52可以由电介质板或管(37,56,58)形成,每个电介质具有开口(37A,56A,58A)。 清洁腔室内的电场和离子能量可另外通过浮动电极160,160a控制以抑制SPC期间的等离子体损伤
    • 19. 发明公开
    • 가스 스크러버
    • 气体滚筒
    • KR1020030080447A
    • 2003-10-17
    • KR1020020019056
    • 2002-04-08
    • 최경수고찬규(주)플라즈마테크놀로지
    • 최경수고찬규박동화고동윤
    • B01D53/32
    • B01D53/75B01D47/06B01D47/14B01D53/266B01D53/323B01D53/78B01D2258/0216B01D2259/818H05H1/24H05H2245/121
    • PURPOSE: A gas scrubber for eliminating noxious gases generated from semiconductor manufacturing process using plasma is provided. CONSTITUTION: The gas scrubber(10) comprises a plasma generation means(1) for generating plasma of at least 1,000 deg.C by injecting plasma forming gas into DC arc discharge generated by applying voltage between anode member and cathode member; a noxious gas treatment means(2) separately connected to the plasma generation means to treat plasma introduced from the plasma generation means and noxious gases; an adsorption means(3) connected to the noxious gas treatment means to adsorb the treated gas or powder by spraying water to treated gas or powder introduced from the noxious gas treatment means; and a wastewater storage means(4) connected to the adsorption means to store the introduced wastewater by flowing in wastewater formed by the adsorption means, wherein the plasma generation means comprises cathode member, and anode member comprising at least one plasma forming gas inflow passageway and at least one cooling water passageway and at least one reactive gas inflow passageway, wherein the noxious gas treatment means comprises reaction chamber, at least one noxious gas inflow passageway and noxious gas guiding chamber, wherein the adsorption means comprises at least one water sprayer and collection chamber, and wherein the wastewater storage means comprises at least one pump and at least one sensor.
    • 目的:提供一种用于消除使用等离子体的半导体制造工艺产生的有害气体的气体洗涤器。 构成:气体洗涤器(10)包括等离子体产生装置(1),用于通过将等离子体形成气体注入通过在阳极构件和阴极构件之间施加电压而产生的直流电弧放电来产生至少1000摄氏度的等离子体; 分离地连接到等离子体产生装置以处理从等离子体产生装置引入的等离子体和有害气体的有害气体处理装置(2) 连接到有害气体处理装置的吸附装置(3),用于通过将水喷洒到从有害气体处理装置引入的处理气体或粉末中来吸附处理过的气体或粉末; 和连接到所述吸附装置的废水存储装置(4),用于通过在由所述吸附装置形成的废水中流动来存储引入的废水,其中所述等离子体产生装置包括阴极部件,以及包括至少一个等离子体形成气体流入通道和 至少一个冷却水通道和至少一个反应性气体流入通道,​​其中有害气体处理装置包括反应室,至少一个有害气体流入通道和有毒气体引导室,其中吸附装置包括至少一个喷水器和收集 并且其中所述废水存储装置包括至少一个泵和至少一个传感器。