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101. 发明公开

KR1020110121121A 구리와 티타늄을 포함하는 금속막용 식각액 조성물 无效
标题翻译：用于包含铜和钛的金属层的蚀刻溶液组合物
公开(公告)号：KR1020110121121A
公开(公告)日：2011-11-07
申请号：KR1020100040568
申请日：2010-04-30
申请人： 동우 화인켐 주식회사
发明人： 임민기 , 권오병 , 이유진 , 유인호
IPC分类号： C23F1/18 , C23F1/30 , H01L21/205
CPC分类号： H01L21/32134 , C23F1/18 , C23F1/26 , C23F1/10 , C23F1/14 , C23F1/16 , C23F1/30 , H01L21/205 , H01L21/306
摘要： PURPOSE: An etching composition for metal layer including copper and titanium is provided to rapidly etch copper even though the hydrogen peroxide and oxone are not included. CONSTITUTION: An etching composition for metal layer including copper and titanium comprises persulfate 5~20 weight%, fluorine containing compound 0.01~2 A weight%, inorganic acid salt and their mixture over one kind rest selected between the inorganic acid 1~10 weight%, ring-shaped amine compound 0.3~5 weight%, chlorine compound 0.1~5 weight%, p-toluene sulfonic acid 0.1~5 weight%, and the water. The persulfate is selected in the group consisting of the ammonium persulfate, persulfate minor and the potassium persulphate.
摘要翻译：目的：提供包括铜和钛的金属层的蚀刻组合物，以便即使不包括过氧化氢和氧化物也能快速蚀刻铜。构成：包含铜和钛的金属层蚀刻组合物包含5〜20重量％的过硫酸盐，含氟化合物0.01〜2重量％，无机酸盐及其混合物，其中无机酸1〜10重量％，环状胺化合物0.3〜5重量％，氯化合物0.1〜5重量％，对甲苯磺酸0.1〜5重量％，和水。过硫酸盐选自过硫酸铵，过硫酸钠和过硫酸钾。

102. 发明公开

KR1020090095408A 금속 배선 형성을 위한 식각액 조성물 无效
标题翻译：用于形成金属线的蚀刻溶液组合物
公开(公告)号：KR1020090095408A
公开(公告)日：2009-09-09
申请号：KR1020080020733
申请日：2008-03-05
申请人： 동우 화인켐 주식회사
发明人： 김기섭 , 이승용 , 이준우 , 진영준 , 박영철 , 양승재 , 장상훈 , 임민기 , 이현규
IPC分类号： C23F1/16 , C23F1/14
CPC分类号： C23F1/16 , C09K13/04 , C23F1/34
摘要： An etchant composites to form metal wiring is provided to secure the stability of the solution in the process progress and prevent the damage of an under layer. An etchant composites to form metal wiring comprises H3PO4 of 40~70 weight%, HNO3 of 2~10 weight%, CH3COOH of 5~20 weight%, phosphate of 0.1~5 weight%, rest compound having the amino radical of 0.1~5 weight% and carboxylic acid group, and water. The phosphate is the sodium dihydrogen phosphate and one kind or greater selected from the potassium dihydrogen phosphate. The compound having the amino radical and carboxylic acid group within one molecule is one selected from alanine series, aminobutyric acid series, glutamic acid series, glycine series, iminodiacetic acid series, nitrilotriacetic acid series and sarcosine series. The etchant composites more includes one or greater among the etching control, surfactant, scavenger, anticorrosive agent and pH adjusting agent.
摘要翻译：提供用于形成金属布线的蚀刻剂复合材料，以确保溶液在工艺过程中的稳定性并防止下层的损坏。用于形成金属布线的蚀刻剂复合材料包括40〜70重量％的H 3 PO 4，2〜10重量％的HNO 3，5〜20重量％的CH 3 COOH，0.1〜5重量％的磷酸酯，氨基的残基为0.1〜5 重量％和羧酸基团，和水。磷酸盐是磷酸二氢钠，选自磷酸二氢钾中的一种以上。一分子内具有氨基和羧酸基团的化合物是选自丙氨酸系列，氨基丁酸系列，谷氨酸系列，甘氨酸系列，亚氨基二乙酸系列，次氨基三乙酸系列和肌氨酸系列中的一种。蚀刻剂复合物更多地包括蚀刻控制，表面活性剂，清除剂，防腐剂和pH调节剂中的一种或更多种。

103. 发明公开

KR1020080049326A 식각액 无效
标题翻译：蚀刻剂
公开(公告)号：KR1020080049326A
公开(公告)日：2008-06-04
申请号：KR1020060119755
申请日：2006-11-30
申请人： 엘지디스플레이 주식회사
发明人： 차승환 , 조정식 , 이창희
IPC分类号： C09K13/04 , C09K13/06
CPC分类号： C23F1/16 , C09K13/04
摘要： An etchant for etching metals is provided to improve the step coverage of the film laminated on the upper part of a metal pattern. An etchant for etching metals comprises 55-85 wt% of phosphoric acid; 3-10 wt% of nitric acid; 5-15 wt% of acetic acid; and a sodium ion. Preferably the sodium ion is contained in sodium hydroxide, and the sodium hydroxide has a concentration of 3,000-6,000 ppb.
摘要翻译：提供用于蚀刻金属的蚀刻剂以改善层压在金属图案上部的薄膜的台阶覆盖。用于蚀刻金属的蚀刻剂包含55-85重量％的磷酸; 3-10重量％的硝酸; 5-15重量％的乙酸; 和钠离子。钠离子优选包含在氢氧化钠中，氢氧化钠的浓度为3,000-6,000ppb。

104. 发明公开

KR1020070060864A 금속막 식각용액 有权
标题翻译：金属层的蚀刻
公开(公告)号：KR1020070060864A
公开(公告)日：2007-06-13
申请号：KR1020050120988
申请日：2005-12-09
申请人： 동우 화인켐 주식회사
发明人： 이준우 , 김성수 , 오금철
IPC分类号： C23F1/16
CPC分类号： C23F1/16 , C01B7/00 , C09K13/04 , C23F1/20 , C23F1/26
摘要： An etchant for a metal film, which can provide very good etching properties during etching of the metal film, and can maintain etching uniformity even in case of a large size of the substrate and can prevent spots from being generated on the substrate when manufacturing an array substrate for liquid crystal display panels, is provided. An etchant for a metal film comprises: 1 to 15 wt.% of nitric acid based on the total composition weight; 0.1 to 10 wt.% of a halogen-based additive based on the total composition weight; and 75 to 98.9 wt.% of water based on the total composition weight. A method for manufacturing an array substrate for liquid crystal display panels comprises the steps of: (a) forming a metal layer on a substrate(10); (b) etching the metal layer to form a gate electrode(20a); (c) forming a gate insulation layer(30) on the gate electrode; (d) forming a semiconductor layer on the gate insulation layer; (e) forming a source electrode(50) and a drain electrode(51) on the semiconductor layer; and (f) forming a pixel electrode(70) on the source electrode and the drain electrode, wherein an etching process is performed in any one step of the step(b), the step(e) and the step(f) using an etchant for a metal film comprising: 1 to 15 wt.% of nitric acid based on the total composition weight; 0.1 to 10 wt.% of a halogen-based additive based on the total composition weight; and 75 to 98.9 wt.% of water based on the total composition weight.
摘要翻译：金属膜的蚀刻剂，其可以在金属膜的蚀刻期间提供非常好的蚀刻性能，并且即使在基板的大尺寸的情况下也能够保持蚀刻均匀性，并且可以防止在制造阵列时在基板上产生斑点提供液晶显示面板用基板。用于金属膜的蚀刻剂包括：基于总组合物重量的1至15重量％的硝酸; 基于总组合重量的0.1至10重量％的卤素基添加剂; 和75至98.9重量％的水，基于总组合物重量。制造液晶显示面板用阵列基板的方法包括以下步骤：（a）在基板（10）上形成金属层; （b）蚀刻所述金属层以形成栅电极（20a）; （c）在栅电极上形成栅极绝缘层（30）; （d）在栅绝缘层上形成半导体层; （e）在半导体层上形成源极（50）和漏电极（51）; 以及（f）在所述源电极和所述漏电极上形成像素电极，其中，在步骤（b），步骤（e）和所述步骤（f）中的任一步骤中，使用用于金属膜的蚀刻剂，其包含：基于总组合物重量为1至15重量％的硝酸; 基于总组合重量的0.1至10重量％的卤素基添加剂; 和75至98.9重量％的水，基于总组合物重量。

105. 发明公开

KR1020060108502A 금속선택성 에칭액 有权
标题翻译：金属选择性蚀刻解决方案
公开(公告)号：KR1020060108502A
公开(公告)日：2006-10-18
申请号：KR1020060032251
申请日：2006-04-10
申请人： 간토 가가꾸 가부시키가이샤
发明人： 다카하시히데끼 , 쿠로이와켄지 , 카토마사루
IPC分类号： C23F1/02 , C23F1/16
CPC分类号： C23F1/16 , C09K13/00 , C23F1/02 , C23F1/30 , H01L21/302
摘要： The present invention aims to provide an etching solution for corroding base metal being minimized and the yield being raised in etching noble metal on a semiconductor material having noble metal and base metal, the etching solution furthermore being superior in safety and giving less effect on environment compared with an aqueous solution composed of cyanide or lead compounds. This aim is achieved by the present iodine series etching solution for etching noble metal from a semiconductor material having noble metal and base metal, wherein the noble metal-base metal etching ratio (the noble metal etching rate/the base metal etching rate) of the etching solution is 0.03 or more.

106. 发明公开

KR1020040105567A 유기층 제거 방법 및 장치 无效
标题翻译：通过在放射性部分或电磁谱的微波部分辐射进入室内的基板上移除有机层的方法和装置
公开(公告)号：KR1020040105567A
公开(公告)日：2004-12-16
申请号：KR1020040040948
申请日：2004-06-04
申请人： 피.씨.티. 시스템즈, 인코포레이티드
发明人： 몬티어스개리엘. , 매튜스로버트알.
IPC分类号： H01L21/02
CPC分类号： H01L21/67115 , B08B3/08 , B08B7/0021 , B08B7/005 , B08B7/0057 , C23F1/16 , G03F7/42 , G03F7/423 , G03F7/425 , H01L21/02052 , H01L21/31111 , H01L21/31133 , H01L21/32134 , H01L21/67051 , H01L21/6708
摘要： PURPOSE: A method and an apparatus for removing an organic layer are provided to improve processing efficiency by heating a substrate with radiation during a chemical processing period. CONSTITUTION: A process chamber(6) is provided. A substrate(2) is inserted into the process chamber. A processing chemical is introduced into the processing chamber. The process chamber is pressurized by at least one of introducing the processing chemical into the process chamber and introducing a gas into the process chamber. A radiation is applied to heat at least one of a substrate layer, a substrate-contacting member, and the processing chemical in order to promote a reaction between the substrate and the processing chemical. The pressurizing process occurs at least one of before, after, and simultaneously with radiation application process.
摘要翻译：目的：提供一种去除有机层的方法和装置，以在化学处理期间通过用辐射加热衬底来提高加工效率。构成：提供处理室（6）。将衬底（2）插入到处理室中。将处理化学品引入处理室。处理室通过将处理化学品引入处理室并将气体引入处理室中的至少一种来加压。施加辐射以加热衬底层，衬底接触构件和处理化学品中的至少一个，以促进衬底和处理化学品之间的反应。加压过程发生在辐射施加过程之前，之后和之后的至少之一。

107. 发明公开

KR1020040009443A 반도체 소자의 산화막 식각용 화학 용액 失效
标题翻译：用于氧化物半导体器件的涂层
公开(公告)号：KR1020040009443A
公开(公告)日：2004-01-31
申请号：KR1020020043385
申请日：2002-07-23
申请人： 동부일렉트로닉스 주식회사
发明人： 송호영 , 유흥렬
IPC分类号： C09K13/00
CPC分类号： C09K13/06 , C23F1/16
摘要： PURPOSE: An etchant for the oxide coating of a semiconductor device is provided, to prevent a metal coating from being damaged when a sample is dipped in an etchant to etch an oxide coating. CONSTITUTION: The etchant for an oxide coating comprises at least one selected from a standard oxide etchant and a buffer oxide etchant and ethylene glycol in the ratio of 0.1-3 to 1 by weight, wherein the standard oxide etchant is a mixture of H2O, NH4F and CH3COOH in the ratio of 207 : 62.5 : 250 by weight and the buffer oxide etchant is a mixture of H2O, NH4F and HF in the ratio of 52.2 : 29 : 13 by weight. Preferably the etchant for an oxide coating comprises a buffer oxide etchant and ethylene glycol in the ratio of 0.1-2 : 1 by weight. Preferably the oxide coating is the oxide coating formed by the high density plasma process.
摘要翻译：目的：提供半导体器件的氧化物涂层的蚀刻剂，以防止在将样品浸入蚀刻剂中以蚀刻氧化物涂层时金属涂层被损坏。构成：氧化物涂层的蚀刻剂包括选自标准氧化物蚀刻剂和缓冲氧化物蚀刻剂和乙二醇中的至少一种，其重量比为0.1-3:1，其中标准氧化物蚀刻剂是H 2 O，NH 4 F 和CH 3 COOH，其重量比为207:62.5:250，缓冲氧化物蚀刻剂是H 2 O，NH 4 F和HF的混合物，其重量比为52.2:29:13。优选地，氧化物涂层的蚀刻剂包含0.1-2:1重量比的缓冲氧化物蚀刻剂和乙二醇。优选地，氧化物涂层是通过高密度等离子体工艺形成的氧化物涂层。

108. 实用新型

KR200303343Y1 도금박리공정용 수세수 처리장치 失效
标题翻译：用于电镀剥皮工艺的废水处理装置
公开(公告)号：KR200303343Y1
公开(公告)日：2003-02-07
申请号：KR2020020030732
申请日：2002-10-15
申请人： 삼원금속 주식회사
发明人： 김준식 , 박태명
IPC分类号： C23G1/36
CPC分类号： C23F1/08 , C11D11/0029 , C23F1/16
摘要： 본 고안에 의한 도금박리공정용 수세수 처리장치는 산 처리과정의 폐수와 알칼리 처리과정의 폐수를 혼합하여 중화한 후에 여과하여 여과수는 수세수로 재활용하고 농축액은 증발농축시켜 용해성 중성염의 폐액량을 종전보다도 획기적으로 감소시킬 수 있게 구성한 것이다.

109. 发明公开

KR1020000040212A 금속시트재의 프리에칭 방법 및 그 장치_ 失效
标题翻译：免费蚀刻方法和金属材料的器件
公开(公告)号：KR1020000040212A
公开(公告)日：2000-07-05
申请号：KR1019980055785
申请日：1998-12-17
申请人： 엘지마이크론 주식회사
发明人： 박기원 , 성동묵
IPC分类号： C23F1/00 , C23F1/16
CPC分类号： C23F4/00 , C23F1/16 , C23F1/28
摘要： PURPOSE: A free etching method and device of a metal sheet material are provided to improve productivity by etching after removing an oxide film and a photosensitive film remaining on a metal sheet material by free etching the metal sheet with supersonic waves. CONSTITUTION: A free etching solution(106) of a certain temperature is filled at least in a free etching tank(100), and a metal sheet material(120) is transmitted into the free etching solution. After generating the supersonic wave of specific frequency into the free etching solution, bubbles are generated by the supersonic wave. The bubbles generate big pressure by disintegrating on the surface of the metal sheet material travelling at a regular speed in the free etching solution. Accordingly, the metal sheet material is free-etched, and the free etching solution stained on the metal sheet material is removed through a liquid crystal roller(104).
摘要翻译：目的：提供金属片材的自由蚀刻方法和装置，以通过用超声波自由蚀刻金属片除去保留在金属片材上的氧化膜和感光膜之后的蚀刻来提高生产率。构成：至少在自由蚀刻槽（100）中填充一定温度的自由蚀刻溶液（106），将金属片材（120）传输到自由蚀刻溶液中。在将自由蚀刻溶液中产生特定频率的超声波之后，通过超声波产生气泡。气泡通过在自由蚀刻溶液中以规则速度行进的金属片材的表面上分解而产生大的压力。因此，金属片材被自由蚀刻，并且通过液晶辊（104）去除在金属片材上污染的自由蚀刻溶液。

110. 发明授权

KR100249061B1 무기 과산화물 용액용 안정화 조성물 失效
标题翻译：用于稳定无机过氧化物溶液的组合物
公开(公告)号：KR100249061B1
公开(公告)日：2000-04-01
申请号：KR1019940701353
申请日：1992-10-23
申请人： 솔베이인터록스에스.피.에이.
发明人： 폰타나코스탄트
IPC分类号： C23G1/08
CPC分类号： C23G1/08 , C23F1/16 , C23F3/06
摘要： 환식 또는 방향족 아미노 화합물, 트리아졸, 이미다졸과 카르복시이미다졸의 유도체와 지방족 아민을 함유하는 금속성분의 표면처리용 중탕에 사용되는 무기 과산화물과 과산화수소의 안정화 조성물.
무기 과산화물의 존재하에 산성 pH에서 조성물을 사용하여서 하는 금속표면의 처리방법.
금속의 산세척, 연마 또는 광택용 중탕을 제조하기 위한 조성물의 용도.

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