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91. 发明公开

KR1020040004066A 반도체장치의 제조방법 有权
标题翻译：制造半导体器件的方法
公开(公告)号：KR1020040004066A
公开(公告)日：2004-01-13
申请号：KR1020030041797
申请日：2003-06-26
申请人： 가부시키가이샤 한도오따이 에네루기 켄큐쇼
发明人： 모노에시게하루
IPC分类号： H01L29/786
CPC分类号： H01L29/78696 , H01L21/76838 , H01L29/42384 , H01L29/4908 , H01L29/66757 , H01L29/78621 , H01L2029/7863
摘要： PURPOSE: To provide the technology to particularly manufacture, with good reproducibility, TFT having excellent hot carrier resistance by giving a degree of freedom in design to the size of the TFT of the gate overlap LDD structure formed on the self-alignment basis. CONSTITUTION: A gate electrode is formed of a laminated body including a plurality of conductive layers. Widths of a first conductive layer and a second conductive layer in the direction of channel length are set to provide the result that the first conductive layer as the lower layer is longer than the other and the gate electrode is used as the mask for ion-doping to form the LDD. In this case, the optimum shape can be obtained by processing the shape of the mask pattern to form the gate electrode and then combining this process with the dry etching process, in order to set the LDD overlapped with the gate electrode, namely, Lov to 1 μm or more, preferably to 1.5 μm or more.
摘要翻译：目的：通过在自对准的基础上形成的栅极重叠LDD结构的TFT的尺寸给予一定程度的设计自由度，提供具有良好再现性的TFT，具有良好的再现性，特别是制造具有优异热载流子电阻的技术。构成：栅极由包括多个导电层的层叠体形成。设置沿沟道长度方向的第一导电层和第二导电层的宽度，以提供作为下层的第一导电层比另一个长的结果，并且使用栅电极作为离子掺杂掩模形成LDD。在这种情况下，通过处理掩模图案的形状以形成栅电极，然后将该处理与干蚀刻工艺组合，可以获得最佳形状，以便将LDD与栅电极重叠，即Lov到 1μm以上，优选为1.5μm以上。

92. 发明公开

KR1020030039309A 반도체 소자, 전기 회로, 표시장치, 발광장치 및 전자 기기 有权
标题翻译：半导体元件，电路，显示器件，发光器件和电子单元
公开(公告)号：KR1020030039309A
公开(公告)日：2003-05-17
申请号：KR1020020069401
申请日：2002-11-09
申请人： 가부시키가이샤 한도오따이 에네루기 켄큐쇼
发明人： 이누카이카즈타카
IPC分类号： H01L29/78
CPC分类号： H01L27/1214 , H01L27/1222 , H01L27/1251 , H01L27/3244 , H01L29/42384 , H01L29/4908 , H01L29/66757 , H01L29/78621 , H01L29/78645 , H01L29/78696 , H01L2029/7863
摘要： PURPOSE: To improve the pixel opening rate of a display device and to make reliability and performance to be high, by providing a current storage circuit where an area can be miniaturized, number of elements is small, constitution is simple, a power consumption operation is low and high yield in manufacture can be expected, and applying the current storage circuit to a current driving- type display device such as an OLED display device. CONSTITUTION: A new semiconductor element in the shape of a transistor having multiple drains or sources is used. When the semiconductor elements are used for a writing element and a driving element, the two semiconductor elements can read, store a current value and output current. The area can remarkably easily be made small.
摘要翻译：目的：为了提高显示装置的像素开启率并使可靠性和性能提高，通过提供一个可以小型化的存储电路，元件数量少，结构简单，功耗操作是可以预期制造中的低和高产量，以及将当前存储电路施加到诸如OLED显示装置的电流驱动型显示装置。构成：使用具有多个漏极或源极的晶体管形状的新的半导体元件。当半导体元件用于写入元件和驱动元件时，两个半导体元件可以读取，存储电流值和输出电流。该地区可以很容易地做得很小。

93. 发明授权

KR100349562B1 식각 방법, 박막 트랜지스터 매트릭스 기판 및 그 제조 방법 失效
标题翻译：蚀刻方法薄膜晶体管矩阵基板及其制造
公开(公告)号：KR100349562B1
公开(公告)日：2002-08-21
申请号：KR1019990013851
申请日：1999-04-19
申请人： 후지쯔 가부시끼가이샤
发明人： 이시다유끼마사
IPC分类号： H01L29/786
CPC分类号： H01L29/66757 , H01L21/32134 , H01L21/32139 , H01L27/124 , H01L29/458 , H01L29/78621 , H01L29/78627 , H01L2029/7863
摘要： 본발명은식각, 박막트랜지스터매트릭스기판및 그제조방법에관한것으로단차를완화할수 있는식각방법을제공한다. 하지표면상에 Al 또는 Al 합금층을형성하는공정과, 상기 Al 또는 Al 합금층의표면을 TMAH로처리하는공정과, 상기 TMAH로처리한 Al 또는 Al 합금층의표면상에레지스트패턴을형성하는공정과, 상기레지스트패턴을식각마스크로서사용하여상기 Al 또는 Al 합금층을습식식각하는공정을포함한다.

94. 发明公开

KR1020010083207A 반도체장치 및 그의 제작방법 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：KR1020010083207A
公开(公告)日：2001-08-31
申请号：KR1020010008583
申请日：2001-02-21
申请人： 가부시키가이샤 한도오따이 에네루기 켄큐쇼
发明人： 야마자키순페이 , 고야마준
IPC分类号： G02F1/136
CPC分类号： G02F1/134336 , G02F1/133345 , G02F1/133512 , G02F1/133514 , G02F1/133784 , G02F1/13394 , G02F1/134363 , G02F1/13439 , G02F1/13454 , G02F1/1362 , G02F1/136213 , G02F1/136227 , G02F1/136286 , G02F1/1368 , G02F2201/123 , H01L21/02675 , H01L27/1214 , H01L27/1222 , H01L27/124 , H01L27/1248 , H01L27/1255 , H01L27/1274 , H01L27/1288 , H01L29/42384 , H01L29/458 , H01L29/4908 , H01L29/786 , H01L29/78621 , H01L29/78627 , H01L29/78633 , H01L29/78645 , H01L29/78675 , H01L2029/7863
摘要： PURPOSE: A manufacturing method of a semiconductor device is provided to improve the aperture ratio of a pixel of a reflective or a transmissive LCD(Liquid Crystal Display) without increasing the number of masks and without using a black mask. CONSTITUTION: A manufacturing method of a semiconductor device improves the aperture ratio of a pixel of a reflection-type display device or a transmission-type display device without increasing the number of masks and without using a black mask. A pixel electrode(167) is arranged so as to partially overlap a source wiring(166) for shielding a channel region of a TFT(Thin Film Transistor) from light. Thereby, a high pixel aperture ratio is realized.
摘要翻译：目的：提供半导体器件的制造方法，以增加反射或透射型LCD（液晶显示器）的像素的开口率，而不增加掩模的数量，而不使用黑色掩模。构成：半导体装置的制造方法提高反射式显示装置或透射型显示装置的像素的开口率，而不增加掩模的数量，而不使用黑色掩模。像素电极（167）被布置成部分地覆盖用于屏蔽TFT（薄膜晶体管）的沟道区域的光源布线（166）。从而实现高像素孔径比。

95. 发明公开

KR1020000011242A 식각 방법, 박막 트랜지스터 매트릭스 기판 및 그 제조 방법 失效
标题翻译：蚀刻方法和薄膜晶体管矩阵基板及其制造方法
公开(公告)号：KR1020000011242A
公开(公告)日：2000-02-25
申请号：KR1019990013851
申请日：1999-04-19
申请人： 후지쯔 가부시끼가이샤
发明人： 이시다유끼마사
IPC分类号： H01L29/786
CPC分类号： H01L29/66757 , H01L21/32134 , H01L21/32139 , H01L27/124 , H01L29/458 , H01L29/78621 , H01L29/78627 , H01L2029/7863
摘要： PURPOSE: A thin film transistor matrix substrate manufacturing method is provided to relieve a gap and to have an excellent gap covering. CONSTITUTION: The manufacturing method has the processes of: processing the surface of an AI or an AI alloy layer by a TMAH(tetra methyl ammonium hydroxide); forming a resist pattern on the surface of the AI or the AI alloy layer; and wet-etching the AI or the AI alloy layer using the resist pattern as an etching mask. When wet-etching the AI or the AI alloy layer processed by the TMAH, the substrate forms a side wall having a normal taper or a pyramid shaped slant and improves the gap covering of the upper layer as the side wall shapes the normal taper.
摘要翻译：目的：提供薄膜晶体管矩阵基板制造方法以减轻间隙并具有优异的间隙覆盖。构成：该制造方法具有以下步骤：通过TMAH（四甲基氢氧化铵）处理Al或Al合金层的表面; 在Al或Al合金层的表面上形成抗蚀剂图案; 并使用抗蚀剂图案作为蚀刻掩模来湿蚀AI或Al合金层。当湿式蚀刻由TMAH处理的Al或Al合金层时，衬底形成具有正常锥形或棱锥形倾斜的侧壁，并且随着侧壁形成正常锥度，改善了上层的间隙覆盖。

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