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91. 发明公开

KR1020120081506A 수직형 발광소자 无效
标题翻译：垂直发光装置
公开(公告)号：KR1020120081506A
公开(公告)日：2012-07-19
申请号：KR1020110002870
申请日：2011-01-11
申请人： 삼성전자주식회사
发明人： 민복기 , 박영수 , 채수희 , 김준연 , 홍현기 , 탁영조
IPC分类号： H01L33/38 , H01L33/40 , H01L33/42 , H01L33/22
CPC分类号： H01L33/38 , H01L33/40 , H01L33/42 , H01L2933/0091 , H01L33/22 , H01L33/405
摘要： PURPOSE: A vertical light emitting device is provided to smoothly spread a current by forming a transparent electrode pattern in an intermediate region between metal electrode patterns. CONSTITUTION: A semiconductor layer includes an active layer for emitting light. A first electrode is arranged in one side of the semiconductor layer. A second electrode(70) is opposite to the semiconductor layer. One of the first and second electrodes includes a metal electrode pattern(80) and a transparent electrode pattern(85) in an intermediate region between the metal electrode patterns. The transparent electrode pattern is electrically connected to the metal electrode pattern.
摘要翻译：目的：提供垂直发光装置，通过在金属电极图案之间的中间区域形成透明电极图案来平滑地扩展电流。构成：半导体层包括用于发光的有源层。第一电极布置在半导体层的一侧。第二电极（70）与半导体层相对。第一和第二电极中的一个在金属电极图案之间的中间区域中包括金属电极图案（80）和透明电极图案（85）。透明电极图形电连接到金属电极图案。

92. 发明公开

KR1020120068394A 반도체 소자 및 반도체 소자 제조 방법 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：KR1020120068394A
公开(公告)日：2012-06-27
申请号：KR1020100130001
申请日：2010-12-17
申请人： 삼성전자주식회사
发明人： 김준연 , 채수희 , 홍현기 , 탁영조
IPC分类号： H01L21/02 , H01L29/20
CPC分类号： H01L29/2003 , H01L21/02378 , H01L21/02381 , H01L21/02458 , H01L21/02491 , H01L21/02502 , H01L21/02513 , H01L21/0254 , H01L21/02639 , H01L21/02647 , H01L21/02304
摘要： PURPOSE: A semiconductor device and a manufacturing method thereof are provided to reduce crack generation when a nitride semiconductor layer is grown by compensating for tensile stress with compressive stress. CONSTITUTION: A secondary seed layer(15) includes a first substance for masking and a second material for secondary seeding. A nucleation layer(20) is grown up on the secondary seed layer. A nitride semiconductor layer(25) is grown up on the nucleation layer. A buffer layer is formed between the nucleation layer and the nitride semiconductor layer.
摘要翻译：目的：提供一种半导体器件及其制造方法，以通过利用压缩应力补偿拉伸应力来生长氮化物半导体层时的裂纹产生。构成：次级种子层（15）包括用于掩蔽的第一物质和用于二次播种的第二种材料。成核层（20）在次级种子层上长大。在成核层上生长氮化物半导体层（25）。在成核层和氮化物半导体层之间形成缓冲层。

93. 发明公开

KR1020110056866A 질화물 발광소자 및 그 제조방법 无效
标题翻译：氮化钠发光二极管及其制造方法
公开(公告)号：KR1020110056866A
公开(公告)日：2011-05-31
申请号：KR1020090113359
申请日：2009-11-23
申请人： 삼성전자주식회사
发明人： 탁영조 , 김준연 , 홍현기 , 이재원 , 정형수
IPC分类号： H01L33/10 , H01L21/20
CPC分类号： H01L33/10 , H01L21/02381 , H01L21/02439 , H01L21/02458 , H01L21/02502 , H01L21/0254 , H01L21/02639 , H01L21/02647 , H01L33/007 , H01L33/12
摘要： PURPOSE: A gallium nitride light emitting diode and a method for manufacturing the same are provided to increase light extraction efficiency by making one side of a pattern exposed to a reflective layer and covering the whole area of the silicon substrate with the reflective layer. CONSTITUTION: A buffer layer(120) and a first nitride layer(130) are successively formed on a silicon substrate(110). A pattern includes the sidewalls facing with each other by dry-etching the first nitride layer. A reflective film(140) is evaporated on the first nitride layer. An n-type nitride material from the exposed one side wall in horizontal to form an n-type nitride layer(150) covering a first nitride layer. A multi-quantum well activate layer(160) and a p-type nitride layer(170) are successively formed on the n-type nitride layer.
摘要翻译：目的：提供一种氮化镓发光二极管及其制造方法，以通过使反射层的一侧暴露于反射层并用反射层覆盖硅基板的整个区域来提高光提取效率。构成：在硅衬底（110）上依次形成缓冲层（120）和第一氮化物层（130）。图案包括通过干蚀刻第一氮化物层而彼此面对的侧壁。在第一氮化物层上蒸发反射膜（140）。来自暴露的一个侧壁的n型氮化物材料，以形成覆盖第一氮化物层的n型氮化物层（150）。在n型氮化物层上依次形成多量子阱活化层（160）和p型氮化物层（170）。

94. 发明公开

KR1020100082215A 백색 발광 다이오드 无效
标题翻译：白光发光二极管
公开(公告)号：KR1020100082215A
公开(公告)日：2010-07-16
申请号：KR1020090001598
申请日：2009-01-08
申请人： 삼성전자주식회사
发明人： 김준연 , 김택 , 김경국
IPC分类号： H01L33/20 , H01L33/06 , B82B1/00 , B82Y20/00
CPC分类号： H01L33/08 , H01L33/06
摘要： PURPOSE: A white light emitting diode is provided to prevent the effect of the inconsistency of a lattice constant with respect to a substrate by forming a light emitting unit into a nano-structure. CONSTITUTION: A first electrode(12) is formed on a substrate(11). An epi layer(18) is formed on the first electrode. A plurality of nano-rod shape light emitting units(16) is formed on the epi layer. A transparent electrode layer(17a) is formed to cover the outer surface of the light emitting units. An insulating layer(19) is interposed between the transparent electrode layer and the epi layer. A second electrode(17b) is formed on one side of a white light emitting diode(10) to electrically connect with the transparent electrode layer.
摘要翻译：目的：提供白色发光二极管，通过将发光单元形成纳米结构来防止晶格常数相对于衬底的不一致性的影响。构成：在基板（11）上形成第一电极（12）。外延层（18）形成在第一电极上。在外延层上形成有多个纳米棒状发光单元（16）。形成透明电极层（17a）以覆盖发光单元的外表面。绝缘层（19）介于透明电极层和外延层之间。第二电极（17b）形成在白色发光二极管（10）的一侧，以与透明电极层电连接。

95. 发明公开

KR1020100080094A 방사형 이종접합 구조의 나노 막대를 이용한 발광 다이오드 无效
标题翻译：使用径向异质结构纳米光的发光二极管
公开(公告)号：KR1020100080094A
公开(公告)日：2010-07-08
申请号：KR1020080138719
申请日：2008-12-31
申请人： 삼성전자주식회사
发明人： 김준연 , 박영수 , 김택
IPC分类号： H01L33/04 , B82B1/00 , B82Y20/00
摘要： PURPOSE: As elevation the volume comparison spherically the light emitting diode using the nano rod of the radial shape hetero junction structure forms the light emitting structure in the form of nano rod. The optical extraction efficiency is improved. CONSTITUTION: A reflective electrode(106) is formed on the bearing substrate(103). The first area doped to the first type is perpendicularly formed on the reflective electrode. A plurality of nano rod(200) comprises the second part doped to the active area and the second type. The transparent electrode layer(115) surrounds the surface of nano rod. The epi layer(109) is included of the same material as the first area.
摘要翻译：目的：随着体积的比较球形，使用纳米棒的放射状异质结结的发光二极管形成纳米棒形式的发光结构。提高光学提取效率。构成：在轴承基板（103）上形成反射电极（106）。掺杂到第一类型的第一区垂直地形成在反射电极上。多个纳米棒（200）包括掺杂到有源区域和第二类型的第二部分。透明电极层（115）包围纳米棒的表面。外延层（109）包含与第一区域相同的材料。

96. 发明公开

KR1020100055867A 발광 소자의 제조 방법 有权
标题翻译：制造发光装置的方法
公开(公告)号：KR1020100055867A
公开(公告)日：2010-05-27
申请号：KR1020080114755
申请日：2008-11-18
申请人： 삼성전자주식회사
发明人： 김경국 , 채수희 , 박영수 , 김택 , 양문승 , 정형수 , 박재철 , 김준연
IPC分类号： H01L33/12 , H01L33/02
CPC分类号： H01L33/0079 , H01L2924/0002 , H01L2924/00
摘要： PURPOSE: A method for manufacturing a light emitting display is provided to reduce manufacturing costs of the light emitting device by performing a manufacturing process of the light emitting device at once after connecting several growth substrates on a bonding substrate with a large area. CONSTITUTION: A semiconductor layer with an active area for emission is formed on a growth substrate(11). A plurality of growth substrates with respective semiconductor layers are arranged on one bonding substrate(30). The plurality of semiconductor layers respectively formed on the plurality of growth substrates are simultaneously processed through a post-process. The surface of the growth substrate faces the bonding substrate and the growth substrate is bonded on the bonding substrate.
摘要翻译：目的：提供一种制造发光显示器的方法，通过在大面积的接合基板上连接多个生长基板之后，一次进行发光器件的制造工艺来降低发光器件的制造成本。构成：在生长衬底（11）上形成具有用于发射的有源区的半导体层。具有各个半导体层的多个生长衬底被布置在一个接合衬底（30）上。分别形成在多个生长衬底上的多个半导体层通过后处理同时进行处理。生长衬底的表面面向接合衬底，生长衬底接合在接合衬底上。

97. 发明公开

KR1020100028412A 나노 막대를 이용한 발광 다이오드 및 그 제조 방법 无效
标题翻译：使用纳米棒的发光二极管及其制造方法
公开(公告)号：KR1020100028412A
公开(公告)日：2010-03-12
申请号：KR1020080087439
申请日：2008-09-04
申请人： 삼성전자주식회사
发明人： 민복기 , 박영수 , 김택 , 김준연
IPC分类号： H01L33/18 , B82Y20/00
CPC分类号： H01L33/18 , B82Y20/00 , H01L33/405 , Y10S977/72 , Y10S977/721 , Y10S977/722 , Y10S977/723 , Y10S977/932
摘要： PURPOSE: A light emitting diode using nano-rods and a method for manufacturing the same are provided to obtain the superior property of current diffusion and improve light emitting efficiency by preventing current crowding. CONSTITUTION: A light emitting diode(10) includes a carrier substrate(15), a reflective electrode(14), a plurality of nano-rods(12), a transparent insulation layer(13) and a transparent electrode(16). The reflective electrode is arranged on the carrier substrate. The nano-rods are perpendicularly arranged on the reflective electrode. The nano-rods include a first area, a second area and an active area. The transparent insulation layer is filled between the nano-rods. The transparent electrode is arranged on the nano-rods and the transparent insulation layer.
摘要翻译：目的：提供使用纳米棒的发光二极管及其制造方法，以获得优异的电流扩散性能，通过防止电流拥挤而提高发光效率。构成：发光二极管（10）包括载体基板（15），反射电极（14），多个纳米棒（12），透明绝缘层（13）和透明电极（16）。反射电极设置在载体基板上。纳米棒垂直布置在反射电极上。纳米棒包括第一区域，第二区域和有源区域。透明绝缘层填充在纳米棒之间。透明电极布置在纳米棒和透明绝缘层上。

98. 发明公开

KR1020090044799A 액티브 핀의 제조 방법 및 이를 포함하는 트랜지스터 无效
标题翻译：用于制造有源FIN和ACTIVE Fin FET的方法
公开(公告)号：KR1020090044799A
公开(公告)日：2009-05-07
申请号：KR1020070111050
申请日：2007-11-01
申请人： 삼성전자주식회사
发明人： 김민선 , 김준연 , 전중석 , 양현덕
IPC分类号： H01L29/78 , H01L21/336 , B82Y10/00
CPC分类号： H01L29/66795 , H01L21/02603 , H01L29/0669 , H01L29/665 , H01L29/785
摘要： 본 발명은 액티브 핀의 제조 방법 및 이를 포함하는 트랜지스터에 관한 것이다. 절연층이 형성된 실리콘 기판을 식각하여 핀 구조를 형성하는 단계; 상기 핀 구조가 형성된 실리콘 기판 상에 금속층을 증착하여 실리사이드를 형성하는 단계; 및 상기 형성된 실리사이드를 제거하는 단계를 포함하는 액티브 핀 제조방법을 제공한다.
액티브 핀, 전계효과 트랜지스터, 오메가 게이트, 나노와이어

99. 发明公开

KR1020050048111A 넓고 균일한 이득 영역을 가지는 양자 우물 레이저 소자 失效
标题翻译：具有广泛和均匀增益的QUANTUM良好激光器件
公开(公告)号：KR1020050048111A
公开(公告)日：2005-05-24
申请号：KR1020030081951
申请日：2003-11-19
申请人： 삼성전자주식회사
发明人： 이중기 , 이은화 , 김현수 , 방영철 , 김준연
IPC分类号： H01S5/34
摘要： 선택 영역 성장법을 사용하여 공진기의 길이방향으로 서로 다른 파장을 갖는 양자우물 영역들(두께가 서로 다른)을 형성하고 각각의 영역들을 분리하여 분리된 전극을 갖도록 하고, 각각의 양자우물 영역의 길이를 조절하거나 각각의 전극에 별도의 가변저항을 연결하여 조절함으로써 넓은 파장 영역에서 균일한 이득을 갖는 레이저 소자를 형성하는 것이 가능하다.

100. 发明公开

KR1020050028546A 광대역 이득 레이저를 이용한 파장분할다중 방식의 광송신기 有权
标题翻译：使用宽带增益激光器的波长段多路复用光发射机
公开(公告)号：KR1020050028546A
公开(公告)日：2005-03-23
申请号：KR1020030064875
申请日：2003-09-18
申请人： 삼성전자주식회사
发明人： 이은화 , 신동재 , 이중기 , 정대광 , 김준연
IPC分类号： H04B10/50 , H04B10/2581
CPC分类号： H04B10/506 , H04J14/02
摘要： A wavelength division multiplexing optical transmitter using a WGL(Wideband Gain Laser) is provided to solve a problem that a wavelength division multiplexing optical transmission system using a Fabry-Perot laser costs a large amount of system operation fee because each channel must use a particular Fabry-Perot laser. An ASE(Amplified Spontaneous Emission) source(110) outputs non-interference light of a pre-set wavelength band. A circulator(120) outputs the non-interference light which has been received from the ASE source(110) to a WDM(130), and outputs an optical signal received from the WDM(130) to a connected optical transmission link. The WDM(130) demultiplexes the non-interference light which has been received from the circulator(120) to WGLs(Wideband Gain Lasers)(140-1-140-n).
摘要翻译：提供了使用WGL（宽带增益激光器）的波分复用光发射机，以解决使用法布里 - 珀罗激光器的波分复用光传输系统花费大量系统操作费用的问题，因为每个信道必须使用特定的法布里 -Perot激光 ASE（放大自发发射）源（110）输出预设波长带的非干涉光。循环器（120）将从ASE源（110）接收的非干涉光输出到WDM（130），并将从WDM（130）接收的光信号输出到连接的光传输链路。 WDM（130）将已经从循环器（120）接收的非干扰光解复用到WGL（宽带增益激光器）（140-1-140-n）。

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