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    • 5. 发明公开
    • 마이크로전기기계 시스템 및 캡슐화와 그 제조 방법
    • 微电子系统及其封装和制造方法
    • KR1020060015633A
    • 2006-02-17
    • KR1020057023053
    • 2004-03-30
    • 로베르트 보쉬 게엠베하
    • 패트리지아론룻츠마르쿠스크론뮐러실비아
    • B81B7/02H01L21/44
    • B81C1/00261B81B2207/015B81C1/00333B81C2201/0176B81C2203/0136H01L2924/0002H01L2924/00
    • There are many inventions described and illustrated herein. In one aspect, the present invention is directed to a MEMS device, and technique of fabricating or manufacturing a MEMS device, having mechanical structures encapsulated in a chamber prior to final packaging. The material that encapsulates the mechanical structures, when deposited, includes one or more of the following attributes: low tensile stress, good step coverage, maintains its integrity when subjected to subsequent processing, does not significantly and/or adversely impact the performance characteristics of the mechanical structures in the chamber (if coated with the material during deposition), and/or facilitates integration with high-performance integrated circuits. In one embodiment, the material that encapsulates the mechanical structures is, for example, silicon (polycrystalline, amorphous or porous, whether doped or undoped), silicon carbide, silicon-germanium, germanium, or gallium-arsenide.
    • 这里描述和说明了许多发明。 在一个方面,本发明涉及MEMS器件,以及制造或制造MEMS器件的技术,其具有在最终封装之前封装在腔室中的机械结构。 当沉积时,封装机械结构的材料包括以下属性中的一个或多个:低拉伸应力,良好的阶梯覆盖,在进行后续加工时保持其完整性,不会显着和/或不利地影响 室中的机械结构(如果在沉积期间涂覆材料)和/或促进与高性能集成电路的集成。 在一个实施例中,封装机械结构的材料是例如硅(多晶,无定形或多孔,无论掺杂或未掺杂),碳化硅,硅 - 锗,锗或砷化镓。