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2. 发明专利

JP4519418B2 Semiconductor device 有权
公开(公告)号：JP4519418B2
公开(公告)日：2010-08-04
申请号：JP2003124411
申请日：2003-04-28
申请人：ルネサスエレクトロニクス株式会社
发明人：良太山本
IPC分类号： H01L21/822 , H01L23/52 , H01F17/00 , H01F27/40 , H01L21/3205 , H01L23/552 , H01L23/58 , H01L27/04 , H01L27/06 , H01L27/08 , H01L29/8605
CPC分类号： H01L23/552 , H01F17/0006 , H01F27/40 , H01L23/585 , H01L27/0682 , H01L27/08 , H01L29/8605 , H01L2924/0002 , H01L2924/19015 , H01L2924/3011 , H01L2924/00

3. 发明专利

JP4223375B2 Semiconductor device 有权
公开(公告)号：JP4223375B2
公开(公告)日：2009-02-12
申请号：JP2003384550
申请日：2003-11-14
申请人：三菱電機株式会社
发明人：幸央安田
IPC分类号： H01L21/822 , H01L27/04 , H01L29/739 , H01L29/78 , H01L29/8605 , H03K17/082 , H03K17/56
CPC分类号： H03K17/0828 , H01L29/7395 , H01L29/8605

5. 发明专利

JP3764848B2 Semiconductor device 有权
公开(公告)号：JP3764848B2
公开(公告)日：2006-04-12
申请号：JP2000324229
申请日：2000-10-24
申请人：セイコーインスツル株式会社
发明人：博昭鷹巣
IPC分类号： H01L27/04 , H01L21/822 , H01L23/522 , H01L27/08 , H01L29/8605
CPC分类号： H01L27/0802 , H01L23/5228 , H01L29/8605 , H01L2924/0002 , H01L2924/00

6. 发明专利

JP2005333093A Semiconductor resistive element, manufacturing method of same and semiconductor device using semiconductor resistive element 审中-公开
标题翻译：半导体电阻元件，使用半导体电阻元件的半导体器件的制造方法
公开(公告)号：JP2005333093A
公开(公告)日：2005-12-02
申请号：JP2004152607
申请日：2004-05-21
申请人： Omron Corp , オムロン株式会社
发明人： KURATANI NAOTO , HARUYAMA TAKAYUKI , OKAMOTO KEISUKE , YANAZAKI TAKABUMI , WADA SHINICHI
IPC分类号： G01L9/00 , G01P15/12 , H01L21/02 , H01L21/329 , H01L21/822 , H01L27/04 , H01L27/08 , H01L29/84 , H01L29/8605
CPC分类号： H01L28/20 , G01P15/123 , G01P2015/084 , H01L27/0802 , H01L29/66166 , H01L29/8605
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor resistive element (diffused resistor) that temperature coefficient is small and dispersion of resistance values is small. SOLUTION: A p-type diffusion layer 12 is formed by injecting ions onto an n-type semiconductor substrate 15 and an n-type resistive element region 13 is formed by injecting ions onto the surface layer of the layer 12. Wherein, the concentration of surface impurity in the layer 12 is 1.0×10 18 atoms/cm 3 or more and 8.0×10 18 atoms/cm 3 or less. In addition, the concentration of surface impurity in the region 13 is 1.0×10 19 atoms/cm 3 or more and 5.0×10 19 atoms/cm 3 or less. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供温度系数小且电阻值分散小的半导体电阻元件（扩散电阻器）。解决方案：通过将离子注入到n型半导体衬底15上形成p型扩散层12，并且通过将离子注入到层12的表面层上形成n型电阻元件区13。层12中的表面杂质的浓度为1.0×10原子/ cm 3 / SP> 3以上且8.0×10 18原子/ cm 3， SP> 3 以下。此外，区域13中的表面杂质的浓度为1.0×10 14原子/ cm 3 / SP> 3以上且5.0×10 19原子 / cm 3 以下。版权所有（C）2006，JPO＆NCIPI

7. 发明专利

JP3505075B2 Voltage divider resistors and voltage divider circuit 失效
公开(公告)号：JP3505075B2
公开(公告)日：2004-03-08
申请号：JP1401298
申请日：1998-01-27
申请人：シャープ株式会社
发明人：治也森
IPC分类号： H01L27/04 , H01L21/822 , H01L27/08 , H01L29/8605
CPC分类号： H01L27/0802 , H01L29/8605

8. 发明专利

JP2001144254A SOI SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR 失效
公开(公告)号：JP2001144254A
公开(公告)日：2001-05-25
申请号：JP32277299
申请日：1999-11-12
申请人： SHARP KK
发明人： ALBERT O ADAN
IPC分类号： H01L27/04 , H01L21/822 , H01L27/08 , H01L29/8605
摘要： PROBLEM TO BE SOLVED: To provide an SOI semiconductor device comprising built-in variable resistance element which can take a larger width in change of resistance value, namely a control electrode which can control electrical characteristics. SOLUTION: There is provided an SOI semiconductor device where a resistance body 4, which is completely insulated and separated with an insulation film 2a, is formed with a surface semiconductor layer of the SOI substrate laminating the embedded insulation film 2 and surface semiconductor layer and the resistance value of the resistance body 4 is set, depending on the impurity concentration included in the surface semiconductor layer and a size of the resistance body 4.

9. 发明专利

JPH11214631A VOLTAGE DIVISION RESISTOR AND VOLTAGE DIVISION CIRCUIT 失效
公开(公告)号：JPH11214631A
公开(公告)日：1999-08-06
申请号：JP1401298
申请日：1998-01-27
申请人： SHARP KK
发明人： MORI HARUYA
IPC分类号： H01L27/04 , H01L21/822 , H01L27/08 , H01L29/8605
摘要： PROBLEM TO BE SOLVED: To reduce impedance in the high frequency area of an output terminal while the increase of a chip area and the wave of impedance in the high frequency area are avoided by providing at least one capacity electrode which substantially forms capacity elements with a resistance element dividing inputted voltage. SOLUTION: A resistor 2 generated by doping N-type impurity is provided for a semiconductor substrate whose surface is coated with the insulating body 1 of silicon oxide by using a P-type silicon substrate. The resistor 2 is connected to aluminum output electrodes 3 by a hole provided for the insulating body 1. In a dielectric 5 between the output electrodes 3, silicon nitride whose relative dielectric constant is larger than silicon oxide is used and it is made to be thinner than the other part. Then, capacity per area is enlarged. The electrodes are formed on the dielectrics 5 with aluminum and capacity electrodes 4 are obtained. The capacity electrodes 4 are connected to ground potential an aluminum wiring. A space for arranging the capacity elements by a resistance element where a plurality of capacity elements are formed is secured on the resistance element and the increase of chip cost can be suppressed.

10. 发明专利

JPH10512103A 失效
公开(公告)号：JPH10512103A
公开(公告)日：1998-11-17
申请号：JP51565797
申请日：1996-10-17
IPC分类号： H01L27/04 , H01L21/822 , H01L23/64 , H01L27/01 , H01L27/06 , H01L29/8605

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