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1. 发明专利

JP5599738B2 Magneto-resistance effect element and method of forming the same 有权
标题翻译：空值
公开(公告)号：JP5599738B2
公开(公告)日：2014-10-01
申请号：JP2011016450
申请日：2011-01-28
申请人：ヘッドウェイテクノロジーズインコーポレイテッド
发明人： ▲丹▼ ▲赴▼ , ▲恵▼娟王 , 民李 , 坤亮張
IPC分类号： H01L43/08 , G11B5/39 , H01L43/10
CPC分类号： G11B5/3906 , G01R33/093 , G01R33/098 , G11B5/3163 , G11B2005/3996 , H01F10/3254 , H01F10/3272 , H01F41/303 , H01L43/08 , H01L43/10 , H01L43/12 , Y10T29/49034 , Y10T29/49052

2. 发明专利

JP2013004126A Method for manufacturing disk drive and disk drive manufactured by the manufacturing method 审中-公开
标题翻译：制造方法制造磁盘驱动器和制造方法制造的磁盘驱动器
公开(公告)号：JP2013004126A
公开(公告)日：2013-01-07
申请号：JP2011132288
申请日：2011-06-14
申请人： Alphana Technology Co Ltd , アルファナテクノロジー株式会社
发明人： NISHIHARA KENJI , KAJIWARA HIROBUMI
IPC分类号： G11B33/02 , B08B3/02 , B08B3/08 , G11B33/14 , H02K15/02
CPC分类号： G11B25/043 , G11B33/1493 , Y10T29/49025 , Y10T29/49034 , Y10T29/53096
摘要： PROBLEM TO BE SOLVED: To provide technology capable of improving the cleanliness of a disk drive and keeping the incidence rate of a TA failure in the case of making a gap between a magnetic head and a recording disk small when the magnetic head traces.SOLUTION: In a method for manufacturing a disk drive, a subassembly is assembled by attaching a bearing unit and a rotator supported by the bearing unit freely rotatably with respect to a solid body to the solid body in a clean room in an assembling step. A mixture of cleaning fluid and first gas is sprayed to at least one between the solid body and the rotator of the subassembly for cleaning in a cleaning step. The subassembly is hermetically sealed by a sealing member in a sealing step.
摘要翻译：要解决的问题：为了提供能够提高磁盘驱动器的清洁度并且在磁头跟踪磁头跟踪时使磁头和记录盘之间的间隙小的情况下保持TA故障的发生率的技术。解决方案：在一种用于制造盘驱动器的方法中，通过将支撑单元和由所述轴承单元支撑的转子相对于固体本身可自由旋转地安装在固体上而组装在一个无尘室中的组件通过组装步。将清洁液和第一气体的混合物喷射到组件的固体和转子之间的至少一个，以在清洁步骤中进行清洁。该组件在密封步骤中由密封构件气密密封。版权所有（C）2013，JPO＆INPIT

3. 发明专利

JP2012114441A Spin transfer oscillator structure and formation method therefor 有权
标题翻译：旋转振荡器振荡器结构及其形成方法
公开(公告)号：JP2012114441A
公开(公告)日：2012-06-14
申请号：JP2011255159
申请日：2011-11-22
申请人： Headway Technologies Inc , ヘッドウェイテクノロジーズインコーポレイテッド
发明人： ZHANG KUNLIANG , LI MIN , YUCHEN ZHOU
IPC分类号： H01L29/82 , G11B5/31 , H01L21/8246 , H01L27/105 , H01L43/08
CPC分类号： H03B15/006 , B82Y40/00 , G11B5/3146 , G11B2005/0024 , G11C11/161 , G11C11/1675 , H01F10/3272 , H01F10/3286 , H01F10/329 , H01F10/3295 , H01F41/306 , H01L43/08 , Y10T29/49034 , Y10T428/11 , Y10T428/1107 , Y10T428/1114 , Y10T428/1121 , Y10T428/1129 , Y10T428/1143 , Y10T428/1171 , Y10T428/1193
摘要： PROBLEM TO BE SOLVED: To obtain a spin transfer oscillator (STO) structure which can oscillate a field generation layer (FGL) under a low current density in MAMR application.SOLUTION: In an STO structure formed between a main magnetic pole 20 and a light shield 26, two assist layers 27a, 32 having perpendicular magnetic anisotropy (PMA) are provided. The STO structure has a configuration consisting of a seed layer 21/a spin injection layer (SIL) 22/a first spacer layer 23/a first PMA assist layer 27a/a composite FGL 40/a second spacer 31/a second PMA assist layer 32/a cap layer 25. The composite FGL 40 has a synthetic antiferromagnetic structure consisting of a lower FGL 27b, an upper FGL 29, and an intermediate coupling layer 28 therebetween. The SIL 22 and two PMA assist layers 27a, 32 each are a laminate composed of (CoFe/Ni), or the like.
摘要翻译：要解决的问题：获得在MAMR应用中可以在低电流密度下振荡场产生层（FGL）的自旋转移振荡器（STO）结构。解决方案：在主磁极20和光屏蔽26之间形成的STO结构中，提供具有垂直磁各向异性（PMA）的两个辅助层27a，32。 STO结构具有由种子层21 /自旋注入层（SIL）22 /第一间隔层23 /第一PMA辅助层27a /复合物FGL 40 /第二间隔物31 /第二PMA辅助层 32 /盖层25.复合FGL 40具有由下部FGL 27b，上部FGL 29和中间耦合层28组成的合成反铁磁结构。 SIL 22和两个PMA辅助层27a，32分别是由（CoFe / Ni） x 等构成的层叠体。版权所有（C）2012，JPO＆INPIT

4. 发明专利

JP2011008907A Hard bias structure and method of forming the same and magnetic reproducing head 有权
标题翻译：硬偏差结构及其形成方法和磁复制头
公开(公告)号：JP2011008907A
公开(公告)日：2011-01-13
申请号：JP2010143540
申请日：2010-06-24
申请人： Headway Technologies Inc , ヘッドウェイテクノロジーズインコーポレイテッド
发明人： ZHANG KUNLIANG , LI MIN , YUCHEN ZHOU , TEI SATOSHI
IPC分类号： G11B5/39
CPC分类号： G11B5/332 , B82Y10/00 , B82Y25/00 , G11B5/315 , G11B5/3909 , G11B5/3912 , G11B5/3932 , G11B2005/3996 , Y10T29/49032 , Y10T29/49034 , Y10T29/49044 , Y10T29/49067 , Y10T428/1143 , Y10T428/115 , Y10T428/1157 , Y10T428/1171 , Y10T428/1193 , Y10T428/12819
摘要： PROBLEM TO BE SOLVED: To provide a hard bias structure for giving large perpendicular magnetic anisotropy to a hard bias layer by a thin sheet layer, without annealing that can possibly adversely affect an adjacently coupled reproduction sensor element.SOLUTION: The hard bias structure 50, adjacent to sidewalls 20 and 21 of a sensor laminate 30, has a multilayer structure in which the bard bias layer 25 is formed on a composite seed layer 22. The composite seed layer 22 has a multilayer structure represented by a Ta layer/metal layer (M1), and the metal layer (M1) has a face-centered cubic (111) crystal structure, or the like. The hard bias layer has a multilayer structure represented by (R1/R2), wherein R1=CoFe or the like, R2 layer=NiFe or the like, x=integer, and a thickness t2 of each R2 layer> thickness t1 of each R1 layer is satisfied.
摘要翻译：要解决的问题：提供一种用于通过薄片层向硬偏置层提供大的垂直磁各向异性的硬偏压结构，而不退火可能不利地影响相邻耦合的再现传感器元件。解决方案：硬偏压结构50，邻近传感器层压体30的侧壁20和21具有多层结构，其中弯曲偏压层25形成在复合晶种层22上。复合晶种层22具有由Ta层/金属层（ M1），并且金属层（M1）具有面心立方（111）晶体结构等。硬偏置层具有由（R1 / R2）表示的多层结构，其中R1 = CoFe等，R2层= NiFe等，x =整数，每个R2层的厚度t2>每个R1的厚度t1 层满意

5. 发明专利

JP4176322B2 Thin film forming method, and a method of manufacturing a thin film magnetic head 有权
公开(公告)号：JP4176322B2
公开(公告)日：2008-11-05
申请号：JP2001086757
申请日：2001-03-26
申请人： Tdk株式会社
发明人：順一佐藤 , 和也前川 , 宏之宮本 , 昭雄飯島
IPC分类号： G03F7/26 , C23C14/34 , G03F7/40 , G03F7/42 , G11B5/31 , H01F41/30
CPC分类号： B82Y25/00 , B82Y40/00 , G11B5/3116 , G11B5/313 , G11B5/3163 , H01F41/302 , Y10T29/49032 , Y10T29/49034 , Y10T29/49041 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052

6. 发明专利

JP3958947B2 Magnetic sensing element and a method of manufacturing the same 有权
公开(公告)号：JP3958947B2
公开(公告)日：2007-08-15
申请号：JP2001279194
申请日：2001-09-14
申请人：アルプス電気株式会社
发明人：義弘西山
IPC分类号： H01L43/08 , G01R33/09 , G11B5/31 , G11B5/39 , G11B5/40 , H01F10/16 , H01L43/12
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3116 , G11B5/3903 , G11B5/3909 , G11B5/40 , G11B2005/3996 , Y10T29/49034 , Y10T29/49046 , Y10T428/1107 , Y10T428/1143

7. 发明专利

JP2006252753A Magnetic head for perpendicular magnetic recording and method of manufacturing the same 有权
标题翻译：磁头记录用磁头及其制造方法
公开(公告)号：JP2006252753A
公开(公告)日：2006-09-21
申请号：JP2006058845
申请日：2006-03-06
申请人： Headway Technologies Inc , ヘッドウェイテクノロジーズインコーポレイテッド
发明人： SASAKI YOSHITAKA , ITO HIROYUKI , ARAKI HIRONORI , HORINAKA TAKEHIRO , TANEMURA SHIGEKI
IPC分类号： G11B5/31
CPC分类号： G11B5/1278 , G11B5/3116 , Y10T29/49032 , Y10T29/49034 , Y10T29/49041 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： PROBLEM TO BE SOLVED: To accurately form a magnetic pole layer of a desired shape in a magnetic head for perpendicular magnetic recording, and a method of manufacturing the same. SOLUTION: The magnetic head is provided with an accommodation layer 15 made of a non-magnetic material and having a groove 15a that opens in the top surface, a non-magnetic metal layer 17 made of a non-magnetic metal material having a penetrating opening that is continuous to the groove 15a, and arranged on the top surface of the encasing layer 15, and a pole layer 24 made of a magnetic metal material and accommodated in the groove 15a of the accommodation layer 15 and in the opening 17a of the non-magnetic metal layer 17. The end face of the pole layer 24 arranged at a medium facing surface has a first portion 41 and a second portion that is loacated apart from a substrate at the first portion and connected to the first portion. The width of the first portion 41 is decreased as a distance from the substrate is decreased. The second portion 42 has a uniform width that defines the track width. On the medium facing surface, the non-magnetic metal layers 17 exist on both sides of the second portion 42 in the direction of the track width. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：为了在垂直磁记录用磁头中精确地形成期望形状的磁极层及其制造方法。解决方案：磁头设置有由非磁性材料制成并具有在顶表面上开口的槽15a的容纳层15，由非磁性金属材料制成的非磁性金属层17，其具有与凹槽15a连续并且布置在包装层15的顶表面上的贯穿孔，以及由磁性金属材料制成并容纳在容纳层15的槽15a中和开口17a中的极层24 非磁性金属层17上的极板层24的端面设置有第一部分41和第二部分，第一部分41和第二部分与第一部分处的基底相隔离，并连接到第一部分。第一部分41的宽度随着离开基板的距离减小而减小。第二部分42具有限定轨道宽度的均匀宽度。在介质表面上，非磁性金属层17沿轨道宽度的方向存在于第二部分42的两侧。版权所有（C）2006，JPO＆NCIPI

9. 发明专利

JP2004296000A Magneto-resistance effect type head and manufacturing method therefor 审中-公开
标题翻译：磁阻效应型头及其制造方法
公开(公告)号：JP2004296000A
公开(公告)日：2004-10-21
申请号：JP2003086910
申请日：2003-03-27
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： NISHIOKA KOICHI , SHIGEMATSU KEISHI
IPC分类号： G11B5/00 , G11B5/39
CPC分类号： G11B5/3903 , B82Y10/00 , G11B2005/0008 , Y10T29/49034
摘要： PROBLEM TO BE SOLVED: To provide a constitution in which the fixed layer magnetic moment is stable to a large external magnetic field, and the direction of magnetization of the fixed layer can be controlled by magnetic field applying treatment at room temperature, and to provide the magnetic field applying treatment. SOLUTION: In a magneto-resistance effect type head, the fixed layer is constituted of two ferromagnetic films A and B which are anti-ferromagnetically coupled to each other, and an anti-ferromagnetic coupling film for separating the two ferromagnetic films A and B from each other, and the single coercive force of the ferromagnetic film A is made to 200 (Oe) or more, and the single coercive force of the ferromagnetic film B is made to 20 (Oe) or less. As to the composition of the ferromagnetic film A and the ferromagnetic film B, when it is expressed by Co 100-Y Fe Y (atomic percent), 80≥Y≥40 for the ferromagnetic film A, and 20≥Y≥0 for the ferromagnetic film B, and the film materials in contact with the ferromagnetic film A are characterized by being Ru, Ta, NiFeCr, Cu, and NiFe. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：为了提供固定层磁矩对大的外部磁场稳定的结构，并且固定层的磁化方向可以通过室温下的磁场施加处理来控制，以及以提供磁场施加处理。解决方案：在磁阻效应型磁头中，固定层由两个相互反铁磁耦合的铁磁膜A和B构成，并且用于分离两个铁磁膜A的反铁磁耦合膜和B，并且将强磁性膜A的单一矫顽力设为200（Oe）以上，将强磁性膜B的单一矫顽力设为20（Oe）以下。关于铁磁性膜A和铁磁性膜B的组成，当以Co 100-Y Fe Y （原子百分比）表示时，80≥Y≥40 对于铁磁性膜A，强磁性膜B为20≥Y≥0，与铁磁性膜A接触的膜材料的特征在于Ru，Ta，NiFeCr，Cu，NiFe。版权所有（C）2005，JPO＆NCIPI

10. 发明专利

JP2003345039A Method for forming pattern, method for manufacturing microdevice, method for manufacturing thin film magnetic head, method for manufacturing magnetic head slider, method for manufacturing magnetic head device, and method for manufacturing magnetic recording and reproducing device 有权
标题翻译：形成图案的方法，制造微型器件的方法，制造薄膜磁头的方法，制造磁头滑块的方法，制造磁头装置的方法以及制造磁记录和再现装置的方法
公开(公告)号：JP2003345039A
公开(公告)日：2003-12-03
申请号：JP2002151339
申请日：2002-05-24
申请人： Tdk Corp , Tdk株式会社
发明人： UEJIMA SATOSHI
IPC分类号： G03F7/40 , G03F7/20 , G03F7/38 , G11B5/31 , H01L21/768
CPC分类号： H01L21/76885 , Y10T29/4902 , Y10T29/49034 , Y10T29/49043
摘要： PROBLEM TO BE SOLVED: To provide a method for forming a pattern to obtain a favorable resist frame, to provide a method for manufacturing a microdevice, a method for manufacturing a thin film magnetic head, a method for manufacturing a magnetic head slider, a method for manufacturing a magnetic head device and a method for manufacturing a magnetic recording and reproducing device. SOLUTION: The method for forming a pattern includes the following steps. They are: a step of forming a metal film comprising a metal material containing an iron atom (e.g. NiFe, CoFeNi, FeCo or the like) on a substrate (S101); a step of subjecting the metal film formed on the substrate to plasma treatment in an environment containing gas containing an oxygen atom and a fluorine atom (e.g. oxygen gas with addition of tetrafluoromethane gas or trifluoromethane gas, or the like) (S103); a step of applying a resist material (e.g. a chemically amplifying positive resist material or the like) on the plasma treated metal film to form a resist film (S105); and a step of removing a part of the resist film to expose a part of the surface of the metal film corresponding to the desired pattern to form a resist frame (S107). COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：提供一种形成图案以获得良好的抗蚀剂框架的方法，提供一种制造微型装置的方法，一种制造薄膜磁头的方法，一种用于制造磁头滑块的方法磁头装置的制造方法以及磁记录再生装置的制造方法。解决方案：用于形成图案的方法包括以下步骤。它们是：在基板上形成包含含有铁原子的金属材料（例如NiFe，CoFeNi，FeCo等）的金属膜的步骤（S101）; （S103）在包含含有氧原子和氟原子的气体的环境（例如添加四氟甲烷气体或三氟甲烷气体的氧气等）中对形成在基板上的金属膜进行等离子体处理的步骤; 在等离子体处理的金属膜上涂布抗蚀剂材料（例如化学放大正性抗蚀剂材料等）以形成抗蚀剂膜的步骤（S105）; 以及除去抗蚀剂膜的一部分以暴露与期望图案相对应的金属膜的表面的一部分以形成抗蚀剂框架的步骤（S107）。版权所有（C）2004，JPO

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