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1. 发明专利

JP2012507142A Cascade laser between the high temperature band 有权
公开(公告)号：JP2012507142A
公开(公告)日：2012-03-22
申请号：JP2011533218
申请日：2009-10-07
申请人：アメリカ合衆国
发明人：キャンディー、チャドウィック、エル． , チュル−スー、キム , バーガフマン、イゴール , ビューリー、ウィリアム、ダブリュー． , ミジン、キム , メイヤー、ジェリー、アール． , リンドル、ジェームズ、アール．
IPC分类号： H01S5/343
CPC分类号： B82Y20/00 , H01S5/3077 , H01S5/3401 , H01S5/3407 , H01S5/3416 , H01S5/3422 , H01S5/34306
摘要： A type II interband cascade gain medium including a thick and indium-rich GaInSb hole well, two or more GaSb hole wells, electron and hole injectors are separated by a thick AISb barrier, the thickness of the firs InAs electron well in the electron injector, as well as the total thickness of the electron injector and the number of cascaded stages is reduced, transition regions are inserted at the interfaces between the various regions of the gain medium, thick separate confinement layers comprising Ga(InAIAs)Sb are disposed between the active gain region and the cladding, and the doping profile of the cladding layers is optimized to minimize the overlap of the optical mode with the most heavily-doped portion of the InAs/AISb SL cladding layers.

2. 发明专利

JP2008034852A Semiconductor layer structure having superlattice 有权
标题翻译：具有超导性的半导体层结构
公开(公告)号：JP2008034852A
公开(公告)日：2008-02-14
申请号：JP2007195436
申请日：2007-07-27
申请人： Osram Opto Semiconductors Gmbh , オスラムオプトセミコンダクターズゲゼルシャフトミットベシュレンクテルハフツングOsram Opto Semiconductors GmbH
发明人： EICHLER CHRISTOPH , LELL ALFRED
IPC分类号： H01S5/343 , H01L33/02 , H01L33/04 , H01L33/06 , H01L33/32
CPC分类号： H01S5/34333 , B82Y20/00 , H01L33/025 , H01L33/04 , H01L33/06 , H01L33/32 , H01L2924/0002 , H01S5/0213 , H01S5/0422 , H01S5/3063 , H01S5/3077 , H01S5/3213 , H01S5/3216 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor layer structure having a superlattice with which electrical and optical properties have been improved, and to provide an opto-electronics device having the semiconductor layer structure. SOLUTION: This semiconductor layer structure includes multiple layers of superlattice containing a predetermined concentration of dopant. The concentration of this dopant differs at least in two layers of the same composition in the superlattice. The dopant of at least one layer of the superlattice is in a gradient of concentration, and the superlattice has a layer doped by a different kind of dopant. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供具有超光栅的半导体层结构，其具有改善的电和光学特性，并提供具有半导体层结构的光电子器件。解决方案：该半导体层结构包括含有预定浓度掺杂剂的多层超晶格。至少在超晶格中相同组成的两层中，该掺杂剂的浓度不同。超晶格的至少一层的掺杂剂处于浓度梯度，并且超晶格具有由不同种类的掺杂剂掺杂的层。版权所有（C）2008，JPO＆INPIT

3. 发明专利

JP4246242B2 Semiconductor light-emitting element 有权
公开(公告)号：JP4246242B2
公开(公告)日：2009-04-02
申请号：JP2007217511
申请日：2007-08-23
申请人：三菱電機株式会社
发明人：信之冨田 , 彰仁大野 , 政義竹見
IPC分类号： H01S5/343
CPC分类号： H01S5/22 , B82Y20/00 , H01L33/02 , H01L33/32 , H01S5/0021 , H01S5/2009 , H01S5/2201 , H01S5/305 , H01S5/3063 , H01S5/3072 , H01S5/3077 , H01S5/34333 , H01S2304/04

4. 发明专利

JP2008515201A High energy infrared semiconductor diode light-emitting device 审中-公开
公开(公告)号：JP2008515201A
公开(公告)日：2008-05-08
申请号：JP2007533696
申请日：2005-09-22
申请人：セミネックス・コーポレーションSeminex Corporation
发明人：キアン・イー , ビーン・デービッド・エム , プルバー・ダニエル・イー
IPC分类号： H01S5/343
CPC分类号： H01S5/34313 , B82Y20/00 , H01S5/0217 , H01S5/0224 , H01S5/02272 , H01S5/02461 , H01S5/2004 , H01S5/22 , H01S5/2214 , H01S5/2231 , H01S5/305 , H01S5/3054 , H01S5/3077 , H01S5/3215 , H01S5/3406 , H01S5/34306 , H01S5/34366
摘要：【課題】アルミニウム・ガリウム、砒化物、ガリウム・インジウム・砒素・リン、インジウム・リン（ＡｌＧａＩｎＡｓ／ＧａＩｎＡｓＰ／ＩｎＰ）材料系およびその組み合わせを用いる半導体レーザーダイオードを提供する。
【解決手段】活性層の設計および光学空洞の設計の両方が最適化され、活性領域の温度上昇を最小化することにより、活性層の温度上昇がレーザー効率に及ぼす影響を少なくする。その結果、１．３０〜１．６１マイクロメートル波長の高出力エネルギー半導体レーザーが得られ、エルビウムをドーピングした導波管デバイスのポンピングとして用いることもでき、または軍事、医療、または工業用途に直接使用することもできる。
【選択図】図３

5. 发明专利

JPS5723292A Semiconductor laser device and manufacture thereof 失效
标题翻译：半导体激光器件及其制造
公开(公告)号：JPS5723292A
公开(公告)日：1982-02-06
申请号：JP9739880
申请日：1980-07-16
申请人： Sony Corp
发明人： MORI YOSHIFUMI , MATSUDA OSAMU
IPC分类号： H01S5/00 , H01S3/06 , H01S5/223 , H01S5/30 , H01S5/323
CPC分类号： H01S5/305 , H01S5/2232 , H01S5/2234 , H01S5/2237 , H01S5/3077 , H01S5/32308
摘要： PURPOSE: To prevent an unnecessary spreading of current and decrease a threshold value of current, by a method wherein the configurations of the current passage and light passage of a laser device are made sufficiently narrow, and the current reduction for limiting the current passage is performed in an active layer and in the vicinity thereof.
CONSTITUTION: On the surface of an N type GaAs substrate 1 whose crystal in the surfacewise direction is (100), a groove 2 having inclined surfaces 3 is formed by etching, and over the whole surface including this, an N type GaAs buffer layer 4 and an N type GaAlAs trapping layer 5 are epitaxially grown, in a laminating manner, following the groove 2. Then, thereon, a P type GaAs active layer 6 is formed having an energy gap width smaller than that of the layer 5, and inclined surfaces 13' parallel to the inclined surfaces 3 are formed, on which an N type GaAlAs trapping layer 7 is grown having a large energy gap. Thus, hetero junctions J
1 and J
2 resulting from the gap width differences are produced at the respective interfaces between the layer 6 and the lower layer 5 and between the layer 6 and the upper layer 7. At the same time, a P-N junction part J
pe is formed at the interface between the layers 5 and 6, and then, a P type GaAs layer 8 having a flat surface is grown on the whole surface.
COPYRIGHT: (C)1982,JPO&Japio
摘要翻译：目的：为了防止电流的不必要的扩散和电流的阈值降低，通过使激光器件的电流通道和光通路的结构变得足够窄的方法，并且进行用于限制电流通过的电流减小在活性层及其附近。构成：在其表面方向的晶体为（100）的N型GaAs衬底1的表面上，通过蚀刻形成具有倾斜表面3的沟槽2，并且在包括其的整个表面上形成N型GaAs缓冲层4 并且N型GaAlAs捕获层5以层叠方式沿着沟槽2外延生长。然后，形成具有比层5的能隙宽度小的能隙间隙宽度的P型GaAs有源层6，并且倾斜形成平行于倾斜表面3的表面13'，其上生长具有大能隙的N型GaAlAs捕获层7。因此，在层6和下层5之间以及层6和上层7之间的各个界面处产生由间隙宽度差产生的异质结J1和J2。同时，PN结部分Jpe为形成在层5和6之间的界面处，然后在整个表面上生长具有平坦表面的P型GaAs层8。

6. 发明专利

JP5223439B2 Semiconductor light-emitting element 有权
公开(公告)号：JP5223439B2
公开(公告)日：2013-06-26
申请号：JP2008110540
申请日：2008-04-21
申请人：ソニー株式会社
发明人：展賢岡野 , 祥男狩野 , 満鎌田 , 英治高瀬 , 誠大金 , 剛長竹 , 啓修成井
IPC分类号： H01S5/227 , H01S5/343
CPC分类号： H01S5/227 , B82Y20/00 , H01L33/145 , H01S5/2201 , H01S5/2222 , H01S5/2223 , H01S5/305 , H01S5/3054 , H01S5/3072 , H01S5/3077 , H01S5/3211 , H01S5/3432

8. 发明专利

JP2008109092A Semiconductor light emitting element 有权
标题翻译：半导体发光元件
公开(公告)号：JP2008109092A
公开(公告)日：2008-05-08
申请号：JP2007217511
申请日：2007-08-23
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： ONO AKIHITO , TAKEMI MASAYOSHI , TOMITA NOBUYUKI
IPC分类号： H01S5/343
CPC分类号： H01S5/22 , B82Y20/00 , H01L33/02 , H01L33/32 , H01S5/0021 , H01S5/2009 , H01S5/2201 , H01S5/305 , H01S5/3063 , H01S5/3072 , H01S5/3077 , H01S5/34333 , H01S2304/04
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor light emitting element achieving a low initial deterioration rate and long life.
SOLUTION: A semiconductor laser element 101 has an active layer 106 disposed between an n-type cladding layer 104 and p-type cladding layer 109. The p-type cladding layer 109 contains magnesium as an impurity. Further, the element includes an n-type diffusion blocking layer 107 expressed by In
x Al
y Ga
1-x-y N, where x is ≥0, y≥0, and x+y 17 cm
-3 to 5×10
19 cm
-3 .
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种实现低初始劣化率和长寿命的半导体发光元件。解决方案：半导体激光元件101具有设置在n型包覆层104和p型覆层109之间的有源层106.p型包覆层109含有杂质的镁。此外，该元件包括由In X Y Y 1-xy N表示的n型扩散阻挡层107，其中x≥ 0，y≥0，x + y <1。n型扩散阻挡层107中的n型杂质掺杂浓度优选为5×10 -3 cm -3 至5×10 19 cm -3 。版权所有（C）2008，JPO＆INPIT

9. 发明专利

JP5444248B2 Waveguide device having a delta doped active region 有权
公开(公告)号：JP5444248B2
公开(公告)日：2014-03-19
申请号：JP2010539410
申请日：2007-12-28
申请人：アギアシステムズインコーポレーテッド
发明人：フレウンド，ジョセフマイケル
IPC分类号： H01S5/323
CPC分类号： H01S5/305 , H01S5/3063 , H01S5/3077 , H01S5/3081 , H01S5/3086 , H01S5/32341

10. 发明专利

JP2011166108A Surface emitting laser element, surface emitting laser array, optical scanner, and image forming apparatus 审中-公开
标题翻译：表面发射激光元件，表面发射激光阵列，光学扫描仪和图像形成装置
公开(公告)号：JP2011166108A
公开(公告)日：2011-08-25
申请号：JP2010167704
申请日：2010-07-27
申请人： Ricoh Co Ltd , 株式会社リコー
发明人： KAMINISHI MORIMASA , SATO SHUNICHI
IPC分类号： H01S5/183 , G02B26/10 , H04N1/113
CPC分类号： H01S5/18311 , B82Y20/00 , H01S5/18358 , H01S5/305 , H01S5/3054 , H01S5/3077 , H01S5/3086 , H01S5/3434 , H01S5/423
摘要： PROBLEM TO BE SOLVED: To provide a surface emitting laser element capable of lowering resistance in the element without degrading light emitting characteristics.
SOLUTION: The surface emitting laser element has a lower semiconductor DBR, a lower spacer layer (n-side spacer layer), an active layer, an upper spacer layer (p-side spacer layer), an upper semiconductor DBR, and the like. These elements are laminated on a substrate. The active layer is sandwiched by the lower spacer layer and the upper spacer layer. The upper spacer layer has an undoped region containing no p-type dopant at least at a part in contact with the active layer, and the lower spacer layer has an n-type dopant doped all over. Accordingly, the resistance in the element can be lowered without degrading the light emitting characteristics.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供能够降低元件的电阻而不降低发光特性的表面发射激光元件。解决方案：表面发射激光元件具有下半导体DBR，下间隔层（n侧间隔层），有源层，上间隔层（p侧间隔层），上半导体DBR和类似。这些元件层压在基板上。有源层被下间隔层和上间隔层夹在中间。上间隔层具有至少部分与有源层接触的不含p型掺杂剂的未掺杂区域，并且下间隔层具有掺杂的n型掺杂剂。因此，可以降低元件中的电阻而不降低发光特性。版权所有（C）2011，JPO＆INPIT

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