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    • 5. 发明专利
    • Light-emitting device manufacturing method
    • 发光装置制造方法
    • JP2013211443A
    • 2013-10-10
    • JP2012081291
    • 2012-03-30
    • Toyohashi Univ Of Technology国立大学法人豊橋技術科学大学Stanley Electric Co Ltdスタンレー電気株式会社
    • WAKAHARA AKIHIROIWAYAMA AKIRA
    • H01L33/48H01L33/32
    • H01L24/95H01L2224/81001
    • PROBLEM TO BE SOLVED: To provide a light-emitting device manufacturing method which has a simplified manufacturing process and improved semiconductor element placement accuracy.SOLUTION: The light-emitting device manufacturing method comprises the following steps from 1 to 7: 1) forming an adhesive layer 37 which is thermoplastic at less than a boundary temperature T0 and thermosetting at the boundary temperature T0 and over on a first substrate 31 having electrode interconnections 33, 35; 2) forming a semiconductor wafer in which a plurality of semiconductor elements each having metal electrodes 18, 19 are provided on a second substrate 11; 3) heating the adhesive layer to a first temperature T1 less than T0 to bond the plurality of semiconductor elements with the adhesive layer in a contacting manner; 4) separating some semiconductor elements from the second substrate and placing the separated semiconductor elements on the adhesive layer; 5) heating the adhesive layer to a second temperature T2 higher than T1 and less than T0 and forcing the some semiconductor element into the adhesive layer; 6) heating the adhesive layer to a third temperature higher than T2 and less than T0 and pressing the adhesive layer until the metal electrodes contact the electrode interconnections; and 7) heating the adhesive layer to a fourth temperature higher than T0 and pressing the some semiconductor elements and the first substrate to form eutectic junction between the metal electrodes and the electrode interconnections.
    • 要解决的问题:提供一种具有简化的制造工艺和改进的半导体元件放置精度的发光器件制造方法。解决方案:发光器件制造方法包括以下步骤1至7:1)形成粘合剂 层37,其在小于边界温度T0的情况下是热塑性的,并且在边界温度T0和以上在具有电极互连33,35的第一基板31上热固化; 2)形成半导体晶片,其中在第二基板11上设置有各具有金属电极18,19的多个半导体元件; 3)将粘合剂层加热至小于T0的第一温度T1,以接触的方式将多个半导体元件与粘合剂层接合; 4)将一些半导体元件与第二衬底分离并将分离的半导体元件放置在粘合剂层上; 5)将粘合剂层加热到高于T1且小于T0的第二温度T2,并迫使一些半导体元件进入粘合剂层; 6)将粘合剂层加热到高于T2且小于T0的第三温度,并且按压粘合剂层直到金属电极接触电极互连; 以及7)将所述粘合剂层加热到高于T0的第四温度,并且按压所述一些半导体元件和所述第一基板以在所述金属电极和所述电极互连之间形成共晶结。