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1. 发明专利

JP5847773B2 装置及びプロセッサー有权
标题翻译：设备和处理器
公开(公告)号：JP5847773B2
公开(公告)日：2016-01-27
申请号：JP2013173544
申请日：2013-08-23
申请人：インテルコーポレイション
发明人：ブラック,ブライアン , サムラ,ニコラス , ウェブ,エム,クレア
IPC分类号： H01L25/07 , H01L25/18 , H01L25/065
CPC分类号： G06F15/7832 , H01L25/0657 , H01L2224/05573 , H01L2224/05647 , H01L2224/13025 , H01L2224/131 , H01L2224/14181 , H01L2224/16145 , H01L2224/73253 , H01L2225/06513 , H01L2225/06562 , H01L2225/06565 , H01L24/16 , H01L2924/00013 , H01L2924/14 , Y02B60/1207 , Y02B60/1225

4. 发明专利

JPS5168144A Maikuropurosetsusa 失效
公开(公告)号：JPS5168144A
公开(公告)日：1976-06-12
申请号：JP12997875
申请日：1975-10-30
申请人： Motorola Inc
发明人： TOOMASU HARORUDO BENETSUTO , AARU FURETSUDO KAARO , ANSONII ERIASU KOBOSHISU , RODONII HARII OOGIRU , CHAARUZU INGURAHAMU PEDORU , MAIKERU FUREDERITSUKU UIRUSU
IPC分类号： G06F1/26 , G06F9/22 , G06F9/30 , G06F9/32 , G06F9/355 , G06F15/78
CPC分类号： G06F9/321 , G06F1/26 , G06F9/226 , G06F9/30163 , G06F9/30189 , G06F9/32 , G06F9/324 , G06F9/342 , G06F9/3557 , G06F15/7832

5. 发明专利

JP5106699B2 A method for manufacturing a semiconductor device and semiconductor device 有权
公开(公告)号：JP5106699B2
公开(公告)日：2012-12-26
申请号：JP2012167982
申请日：2012-07-30
申请人：株式会社半導体エネルギー研究所
发明人：舜平山崎 , 宏充郷戸
IPC分类号： H01L29/786 , H01L21/336
CPC分类号： G06F15/7832 , H01L27/1225 , H01L29/1033 , H01L29/7869
摘要： Disclosed is a semiconductor device including an insulating layer, a source electrode and a drain electrode embedded in the insulating layer, an oxide semiconductor layer in contact with the insulating layer, the source electrode, and the drain electrode, a gate insulating layer covering the oxide semiconductor layer, and a gate electrode over the gate insulating layer. The upper surface of the surface of the insulating layer, which is in contact with the oxide semiconductor layer, has a root-mean-square (RMS) roughness of 1 nm or less. There is a difference in height between an upper surface of the insulating layer and each of an upper surface of the source electrode and an upper surface of the drain electrode. The difference in height is preferably 5 nm or more. This structure contributes to the suppression of defects of the semiconductor device and enables their miniaturization.

7. 发明专利

JP4015986B2 Semiconductor integrated circuit device 有权
公开(公告)号：JP4015986B2
公开(公告)日：2007-11-28
申请号：JP2003382212
申请日：2003-11-12
申请人：沖電気工業株式会社
发明人：清丈藤後
IPC分类号： H01L21/82 , G06F12/00 , G06F13/00 , G06F13/28 , G06F15/78
CPC分类号： G06F15/7832

9. 发明专利

JPS6136845A Single-chip microcomputer 失效
标题翻译：单芯片微型计算机
公开(公告)号：JPS6136845A
公开(公告)日：1986-02-21
申请号：JP15826084
申请日：1984-07-27
申请人： Hitachi Ltd
发明人： KIDA HIROYUKI , MAEJIMA HIDEO
IPC分类号： G06F1/00 , G06F9/22 , G06F9/26 , G06F9/28 , G06F9/38 , G06F13/28 , G06F15/78
CPC分类号： G06F9/3851 , G06F9/268 , G06F13/28 , G06F15/7832
摘要： PURPOSE: To reduce a hardware quantity by unifying a logical circuit for data processing of a processor part and a logical circuit for data processing of each type of peripheral devices and using them in time division.
CONSTITUTION: An instruction word read out of a main memory group via a memory bus consisting of a data bus 51 and an address bus 52 is decoded by a microprogram memory/controller 60. Then a microinstruction 67 is read out successively according to the decoded contents. Various types of control signals 70 are produced via decoders 71W73 and applied to an arithmetic circuit 22, a general-purpose register 21, a peripheral device register 34, a data buffer register 231 and an address buffer register 232 respectively. Thus the transfer of data is possible between optional registers among register groups 21, 34, 231 and 232 together with various types of operations by reading out successively the microinstructions serving as microprograms.
COPYRIGHT: (C)1986,JPO&Japio
摘要翻译：目的：通过统一处理器部件的数据处理逻辑电路和每种类型的外围设备的数据处理逻辑电路，并将其分时并用来降低硬件数量。构成：通过由数据总线51和地址总线52构成的存储器总线从主存储器组读出的指令字由微程序存储器/控制器60解码。然后根据解码的内容连续地读出微指令67 。通过解码器71-73产生各种类型的控制信号70，分别应用于运算电路22，通用寄存器21，外围设备寄存器34，数据缓冲寄存器231和地址缓冲寄存器232。因此，通过连续地读出用作微程序的微指令，可以在寄存器组21,34,231和232中的可选寄存器之间传送数据以及各种类型的操作。

10. 发明专利

JP5976136B2 処理装置、処理装置の作製方法、及びCPU 有权
标题翻译：用于制造的处理装置，处理装置的方法，和CPU
公开(公告)号：JP5976136B2
公开(公告)日：2016-08-23
申请号：JP2015004633
申请日：2015-01-14
申请人：株式会社半導体エネルギー研究所
发明人：山崎舜平 , 郷戸宏充
IPC分类号： H01L27/088 , H01L29/786 , H01L27/146 , H01L21/8242 , H01L27/108 , H01L21/8234
CPC分类号： G06F15/7832 , H01L27/1225 , H01L29/1033 , H01L29/7869

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