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1. 发明专利

JP2008513258A Light discoloration (Photochromic) method for producing a film or plate 审中-公开
公开(公告)号：JP2008513258A
公开(公告)日：2008-05-01
申请号：JP2007534526
申请日：2006-09-04
申请人：エルジー・ケム・リミテッド
发明人：セ−フイ・ハン , テ−シク・カン , ヨン−ジュン・ホン
IPC分类号： B32B3/30 , B05D5/06 , B32B7/02 , C09D201/00 , G02B5/23
CPC分类号： G03C1/74 , G03C1/72
摘要：コーティング基材に凹凸を形成して光変色物質を凹凸の中に満たす方法でコーティングして単位凹凸に満たされた光変色物質を互いに隔離させることによって光変色物質の寿命を向上させる光変色フィルムまたは板の製造方法を提供する。コーティング基材の一部または全体に凹凸を形成する段階；凹凸が形成された基材の一部または全体に光変色物質をコーティングする段階；及び光変色物質を保護するために光変色物質がコーティングされた基材に保護層を形成する段階を含むことを特徴とする光変色フィルムまたは板の製造方法を提供する。

2. 发明专利

JPS61105542A Pattern forming material and formation of pattern 失效
标题翻译：图案形成与形成
公开(公告)号：JPS61105542A
公开(公告)日：1986-05-23
申请号：JP22598884
申请日：1984-10-29
申请人： Nippon Telegr & Teleph Corp
发明人： TANAKA HARUYORI , MORITA MASAO
IPC分类号： G03C1/72 , G03F7/26 , H01L21/027
CPC分类号： G03C1/72
摘要： PURPOSE:To enhance oxygen plasma resistance by incorporating a polymer or copolymer of a specified acetylene compd. and a radical polymn. initiator. CONSTITUTION:The acetylene compd. to be used is one or more selected from compds. represented by formula I in which R1 and R2 are each, independent of each other, H, alkyl, alkenyl, aryl, optionally substd. silyl. A preferable amt. of the radical polymn. initiator for cross-linking the polymer of said compd. of formula I by prebaking is an amt. enough to cross-link the polymer and to change the solubility in solvents, and it is, preferably, 0.5-30wt% of the polymer, when below 0.5wt%, cross-linking does not occur, and when above 30wt%, long-term storage stability and coatability are deteriorated, thus permitting the obtained polymer to be enhanced in oxygen plasma resistance by the presence of the silicon.
摘要翻译：目的：通过引入特定乙炔化合物的聚合物或共聚物来增强氧等离子体抗性。和一个激进的聚合。发起人构成：乙炔化合物要使用的是一个或多个从compds中选择的。由式I表示，其中R 1和R 2各自独立地为H，烷基，烯基，芳基，任选地被取代。甲硅烷基最好的的激进聚合。用于交联所述化合物的聚合物的引发剂。通过预烘烤的方法I是一种。足以交联聚合物并改变在溶剂中的溶解度，并且优选为聚合物的0.5-30重量％，当低于0.5重量％时不发生交联，而当高于30重量％时，长期储存稳定性和涂布性劣化，因此通过硅的存在使获得的聚合物的氧等离子体耐受性提高。

3. 发明专利

JPS61126547A Electron beam resist material 失效
标题翻译：电子束电阻材料
公开(公告)号：JPS61126547A
公开(公告)日：1986-06-14
申请号：JP24792484
申请日：1984-11-26
申请人： Fujitsu Ltd
发明人： AKIMOTO SEIJI
IPC分类号： G03F7/20 , G03C1/72 , G03C5/08
CPC分类号： G03C1/72
摘要： PURPOSE:To obtain a highly practical positive type electron beam resist having superior comprehensive properties including resolving power, sensitivity, heat resistance and etching resistance by using a copolymer consisting of an alpha- methylstyrene deriv. and an acrylic acid deriv. CONSTITUTION:This positive type electron beam resist material is made of a copolymer consisting of an alpha-methylstyrene deriv. and an acrylic acid deriv. represented by the formula (where X is -NH2, -COOH or -OH, Y is F, Cl, Br or I, Z is H or 1-7C alkyl, halogen may be substituted for part or all of alkyl groups, m/(m+n)X100=10-60%, Mw is several thousands - several hundred thousands, and Mw/Mn C/cm sensitivity. It is proof against >=230 deg.C high temp., and the dry etching resistance is about 4 times that of PMMA.
摘要翻译：目的：通过使用由α-甲基苯乙烯衍生物组成的共聚物，获得具有优异的综合性能的高度实用的正型电子束抗蚀剂，包括分辨能力，灵敏度，耐热性和耐蚀刻性。和丙烯酸衍生物。构成：该正型电子束抗蚀材料由由α-甲基苯乙烯衍生物组成的共聚物制成。和丙烯酸衍生物。由式（其中X是-NH 2，-COOH或-OH，Y是F，Cl，Br或I，Z是H或1-7C烷基，卤素可以被部分或全部烷基取代，m / （m + n）X100 = 10-60％，Mw为数千〜数十万，Mw / Mn <= 3）。抗蚀剂材料的分辨能力与聚甲基丙烯酸甲酯（PMMA）和8.0X10 -6 C / cm 2灵敏度相当。耐高温> = 230摄氏度，耐干蚀刻性为PMMA的4倍左右。

4. 发明专利

JPS6141141A Novel copolymer and positive type resist material made of it 失效
标题翻译：新型共聚物及其正极性材料
公开(公告)号：JPS6141141A
公开(公告)日：1986-02-27
申请号：JP16361784
申请日：1984-08-02
申请人： Kuraray Co Ltd
发明人： SUGITA KAZUYUKI , UENO NOBUO , SASAKI SHIGERU , OSADA SHIRO
IPC分类号： G03F7/004 , G03C1/72 , G03C5/08 , G03F7/20
CPC分类号： G03C1/72
摘要： PURPOSE:To obtain a positive type resist material especially suitable for fabrication of semiconductor elements by using a copolymer made from a combination of polymers of polymethacrylate, alpha-methylstyrene or its deriv., and N-methylolacrylamide. CONSTITUTION:A positive type resist material suitable for fabrication of LSI is obtained by using a random copolymer of alpha-methylstyrene type units each represented by formula I (each of R , R , and R is H, halogen, each lower alkyl, haloalkyl, alkoxy, acyl, OH, CN, NH2, or lower alkylamino) in an amt. of 3- 95mol%, acrylatederivative units each represented by formula II (R is each lower alkyl or haloalkyl, halogen, or CN in an amt. of 4.9-96.9mol%; and R is each lower alkyl or haloalkyl, aryl, or aralkyl), and N-methylolacrylamide units each represented by formula III in which R is lower alkyl, halogen, or CN, R is H or lower alkyl in an amt. of 0.01-20mol%.
摘要翻译：目的：通过使用由聚甲基丙烯酸酯，α-甲基苯乙烯或其衍生物的聚合物和N-羟甲基丙烯酰胺的组合制成的共聚物，获得特别适合制造半导体元件的正型抗蚀剂材料。构成：通过使用由式I表示的α-甲基苯乙烯类单元的无规共聚物（R 1，R 2和R 3各自为H），可以得到适用于制造LSI的正型抗蚀剂材料，卤素，每个低级烷基，卤代烷基，烷氧基，酰基，OH，CN，NH 2或低级烷基氨基）。 3-95mol％的丙烯酸酯化单元，各自由式II表示（R 4）为4.9-96.9mol％的低级烷基或卤代烷基，卤素或CN; R 5为低级烷基或卤代烷基，芳基或芳烷基）和由式III表示的N-羟甲基丙烯酰胺单元，其中R 6是低级烷基，卤素或CN，R 7是H或低级烷基。为0.01-20mol％。

5. 发明专利

JPS59200233A Positive type resist 失效
标题翻译：积极的类型
公开(公告)号：JPS59200233A
公开(公告)日：1984-11-13
申请号：JP7413083
申请日：1983-04-28
申请人： Nippon Oil Co Ltd
发明人： TSUCHIYA SHIYOUZOU , AOKI NOBUO
IPC分类号： C08L81/00 , C08G75/22 , C08L61/06 , C08L81/06 , G03C1/72 , G03F7/039
CPC分类号： G03F7/039 , C08G75/22 , C08L61/06 , C08L81/06 , G03C1/72 , C08L81/00 , C08L2666/22
摘要： PURPOSE: To enhance sensitivity to radiation and to enable formation of a uniform dry etching-resistant film after development by using the reaction product between a specified polysulfone and a resol type phenol resin as a positive type resist.
CONSTITUTION: (A) Polysulfone having monomer units each represented by the formula shown here (R is H or 1W20C hydrocarbon residue), such as a polymer obtained by polymerizing alkylidenebicycloheptene with SO
2 and having a number average mol. wt. of about 10,000W1,000,000, and (B) a resol type phenol resin (p-tertiary-butyl-phenol is preferably used as a phenol component) are dissolved in about 2:8W8:2 ratio in an org. solvent, such as chloroform. A substrate is coated with the obtained soln., and heated at 120W200°C for about 10min to react both components (A), (B) to obtain a positive type resist.
COPYRIGHT: (C)1984,JPO&Japio
摘要翻译：目的：提高对辐射的敏感性，通过使用指定的聚砜与甲阶酚醛树脂型酚醛树脂之间的反应产物作为正型抗蚀剂，能够在显影后形成均匀的耐干蚀刻膜。构成：（A）具有单体单元的聚砜，其各自由此处所示的式（R为H或1-20C烃残基）表示，例如通过使亚烷基双环庚烯与SO 2聚合并具有数均分子量而获得的聚合物。重量。约为10,000-1,000,000，和（B）甲阶酚醛型酚醛树脂（对叔丁基苯酚优选用作苯酚组分）以约2:8-8:2的比例溶解在组合物中。溶剂，如氯仿。用所得溶液涂布基材，并在120-200℃加热约10分钟以使两种成分（A），（B）反应，得到正型抗蚀剂。

6. 发明专利

JPS61118745A Light nd radiation sensitive organic polymer 失效
标题翻译：轻质ND辐射敏感有机聚合物
公开(公告)号：JPS61118745A
公开(公告)日：1986-06-06
申请号：JP23950184
申请日：1984-11-15
申请人： Hitachi Ltd
发明人： SUGIYAMA HISASHI , INOUE TAKASHI , NATE KAZUO
IPC分类号： C08G77/00 , C08G77/48 , C08G77/60 , G03C1/72 , G03C5/08 , G03F7/039 , G03F7/075 , G03F7/20 , H01L21/027
CPC分类号： G03C1/72
摘要： PURPOSE:To obtain a light and radiation sensitive org. polymer adapted to formation of a micropattern and superior in etchability by imparting Si-Si bonds and + or --electron conjugated org. groups to the principal chain of the polymer. CONSTITUTION:The light and radiation sensitive org. polymer obtained by condensing, e.g., p-bis(chloromethylphenylsilyl)benzene with methylphenyldichlorosilane in toluene in the presence of metallic sodium is represented by formula I in which R1 is a divalent pi-electro conjugated org. group, such as -CH=CH2, -Capprox.=C-, phenylene, or the like; each of R2-R5 is a monovalent org. group, such as 1-6C hydrocarbon group, -CH=CH2, or phenyl; and n, m are each 1-100, preferably, m/n=0.2-2.
摘要翻译：目的：获得光和辐射敏感组织。适于形成微图案的聚合物，并且通过施加Si-Si键和+或 - 电子共轭组织具有优异的可蚀刻性。组成聚合物的主链。构成：光和辐射敏感组织。在金属钠存在下，通过在甲苯中将对 - 双（氯甲基苯基甲硅烷基）苯与甲基苯基二氯硅烷缩合而获得的聚合物由式Ⅰ表示，其中R1是二价π-电偶联体。基团，例如-CH = CH 2，-C 1-4，= C，亚苯基等; R2-R5各自为单价组分。基团，例如1-6C烃基，-CH = CH 2或苯基; n，m分别为1-100，优选m / n = 0.2-2。

7. 发明专利

JPS6136742A Photosensitive composition 失效
标题翻译：光敏组合物
公开(公告)号：JPS6136742A
公开(公告)日：1986-02-21
申请号：JP15757184
申请日：1984-07-30
申请人： Toshiba Corp
发明人： OONISHI KIYONOBU , ISORI KUNIHIRO
IPC分类号： G03F7/004 , G03C1/00 , G03C1/72
CPC分类号： G03C1/72
摘要： PURPOSE:To obtain a pattern superior in heat resistance and prevented from sag or the like due to heat produced by ion etching or the like by incorporating a specified hydroxybenzylamine compd. in a photosensitive compsn. an aromatic hydroxyl compd. or its deriv. as a structural unit. CONSTITUTION:The photosensitive compsn. superior in heat resistance to the conventional ones and prevented from sag, etc., of a resist pattern due to heat produced by ion etching of a substrate is obtained by incorporating in a compsn. consisting of an aromatic hydroxyl compd., such as a novolak resin obtained by condensation of a phenolic compd. with formalin, a polymer, such as a copolymer of p-vinylphenol and styrene, and a photosensitive agent, such as o-naphthoquinonediazide-sulfonate, a compd. represented by formula I, each of R1-R5 being independently H, halogen, alkyl, aryl, or lower alkyl, at least one of R1, R3, and R5 being (R6)2NCH2-, R6 being 1-5C alkyl.
摘要翻译：目的：通过加入特定的羟基苄胺化合物，得到由于离子蚀刻等产生的热而获得耐热性优异的图案，并防止其下垂等。在光敏产品中。芳香族羟基化合物或其衍生物。作为结构单位。构成：感光组件。通过在组合物中并入而获得由于由基板的离子蚀刻产生的热而抵抗的抗蚀剂图案的耐热性和防止凹凸等的优异性。由芳族羟基化合物组成，例如通过酚醛树脂缩合获得的酚醛清漆树脂。与福尔马林，聚合物如对乙烯基苯酚和苯乙烯的共聚物和光敏剂如邻萘醌二叠氮化物 - 磺酸盐，由式I表示，R 1 -R 5各自独立地为H，卤素，烷基，芳基或低级烷基，R 1，R 3和R 5中的至少一个为（R 6）2 NCH 2 - ，R 6为1-5 C烷基。

8. 发明专利

JPS59116652A Photosensitive resin composition 失效
标题翻译：感光树脂组合物
公开(公告)号：JPS59116652A
公开(公告)日：1984-07-05
申请号：JP23408982
申请日：1982-12-23
申请人： Hitachi Chem Co Ltd
发明人： SUGASAWA NOBORU , ISHIMARU TOSHIAKI , TSUKADA KATSUSHIGE , HAYASHI NOBUYUKI
IPC分类号： G03C1/72 , G03F7/004 , G03F7/038
CPC分类号： G03F7/038 , G03C1/72
摘要： PURPOSE:To improve the film forming property when a protective surface film for a printed wiring board is formed, by adding a reaction product of a specified diol with a specified isocyanate and a specified acrylic or methacrylic monoester, a specified linear polymer, and a specified sensitizer. CONSTITUTION:A diol such as 1,4-butanediol is reacted with 1.2-1.6 isocyanate equiv. of an isocyanate such as isoboron diisocyanate basing on 1.0 OH equiv. of said diol and 0.2-0.3 OH equiv. of the (meth)acrylic ester of a diol basing on 1.0 OH equiv. of said diol to prepare a reaction product. A photosensitive resin composition is composed essentially of 100pts.wt. said reaction product, 5- 400pts.wt. linear polymer such as polymethyl (meth)acrylate with 40-80 deg.C glass transition temp., and a sensitizer which generates free radicals when irradiated with active light. The photosensitive resin composition is easily coated on a substrate or the like, has a favorable film forming property, and gives a protective surface film with superior bendability, heat resistance and solvent resistance by development.
摘要翻译：目的：为了提高形成印刷线路板用保护性表面膜的成膜性，通过将规定的二醇与特定的异氰酸酯和特定的丙烯酸或甲基丙烯酸酯单酯，规定的线型聚合物和规定的敏化剂。构成：二醇如1,4-丁二醇与异氰酸酯等于1.2-1.6反应。的异氰酸酯，例如基于1.0当量的异丁二烯基二异氰酸酯。的所述二醇和0.2-0.3OH当量。的基于1.0OH当量的二醇的（甲基）丙烯酸酯。的所述二醇以制备反应产物。光敏树脂组合物基本上由100pts.wt。所述反应产物为5-400pts.wt。线性聚合物如聚甲基（甲基）丙烯酸甲酯与40-80℃玻璃化转变温度，以及当用活性光照射时产生自由基的敏化剂。感光性树脂组合物容易地涂布在基材等上，具有良好的成膜性，并且通过显影得到具有优异的弯曲性，耐热性和耐溶剂性的保护性表面膜。

9. 发明专利

JPS61130947A Positive type resist composition 失效
标题翻译：积极类型抗性组合物
公开(公告)号：JPS61130947A
公开(公告)日：1986-06-18
申请号：JP25169984
申请日：1984-11-30
申请人： Japan Synthetic Rubber Co Ltd
发明人： HOSAKA YUKIHIRO , MIURA TAKAO , HARITA YOSHIYUKI
IPC分类号： C08K5/28 , C08L61/00 , C08L61/04 , C08L61/06 , G03C1/72 , G03F7/023 , H01L21/027
CPC分类号： G03C1/72
摘要： PURPOSE:To obtain the titled composition having a good thermal resistance, an anti-dry etching and a developing properties and to obtain the titled composition suitable for forming an integrating circuit by using the composition composed of a specific alkali soluble novolak resin and a 1,2-quinone diazido compd. CONSTITUTION:The titled composition comprises the novolak resin shown by formula I wherein R1-R5 are each H, hydroxy, 1-4C alkyl, or an alkoxy group or at least one of R1-R5 is a hydroxy, R6 is H, 1-4C alkyl or formula II wherein R7 is each H, methyl, R8 and R9 are each H, 1-4C alkyl, halogen, (n) is 0-2, and the 1,2-quinone diazido compd. for a positive type resist. By applying the prescribed compds. the titled composition having a high selective ratio in the dry etching in addition to the prescribed properties is obtd. and is used to the integrating circuit having the high integrating degree.
摘要翻译：目的：为了获得具有良好耐热性，抗干蚀刻和显影性能的标题组合物，并且通过使用由特定的碱溶性酚醛清漆树脂组成的组合物和1，获得适于形成积分电路的标题组合物， 2-醌二叠氮化物构成：标题化合物包含由式I表示的酚醛清漆树脂，其中R 1 -R 5各自为H，羟基，1-4C烷基或烷氧基，或者R 1 -R 5中的至少一个为羟基，R 6为H， 4C烷基或式II其中R7各自为H，甲基，R8和R9各自为H，1-4C烷基，卤素，（n）为0-2，并且1,2-醌二叠氮基。用于正型抗蚀剂。通过应用规定的compds。除了规定的性质之外，干法蚀刻中具有高选择比的标题组合物是可以得到的。并且用于具有高集成度的积分电路。

10. 发明专利

JPS6165237A Resist material 失效
标题翻译：耐性材料
公开(公告)号：JPS6165237A
公开(公告)日：1986-04-03
申请号：JP18641084
申请日：1984-09-07
申请人： Toyo Soda Mfg Co Ltd
发明人： AKEYAMA HIDEO , TSUTSUMI YUKIHIRO
IPC分类号： C08F20/00 , C08F20/22 , C08F20/24 , G03C1/72 , G03C5/08 , G03F7/20
CPC分类号： G03C1/72
摘要： PURPOSE:To increase the sensitivity and resolution to electron beams and X-rays and to improve the dry etching resistance by using an F-contg. polymer consisting of specified repeating units. CONSTITUTION:This resist material is an F-contg. polymer consisting of re peating units represented by the formula. The polymer is obtd. by homo polymerizing the phenyl ester of alpha-trifluoromethylacrylic acid. alpha-Tri fluoromethylacrylic acid is reacted with a chlorinating agent such as a mixture of thionyl chloride, phosphorus pentachloride, oxalyl chloride or phosphorus oxychloride with dimethylformamide, or the sodium salt of trifluoromethylacrylic acid is reacted with benzoyl chloride, benzotrichloride or phthaloyl chloride. The resulting alpha-trifluoromethylacrylic acid chloride is reacted with phenol in the presence of a base to synthesize the phenyl ester of alpha-trifluoromethylacrylic acid.
摘要翻译：目的：提高电子束和X射线的灵敏度和分辨率，并通过使用F-contg来提高干蚀刻电阻。由特定重复单元组成的聚合物。构成：该抗蚀材料是F-contg。由式表示的重复单元组成的聚合物。聚合物是可以得到的。通过同时聚合α-三氟甲基丙烯酸的苯酯。使α-三氟甲基丙烯酸与氯化剂如亚硫酰氯，五氯化磷，草酰氯或三氯氧磷的混合物与二甲基甲酰胺反应，或者将三氟甲基丙烯酸的钠盐与苯甲酰氯，三氯甲烷或邻苯二甲酰氯反应。所得的α-三氟甲基丙烯酰氯在碱的存在下与苯酚反应，合成α-三氟甲基丙烯酸的苯酯。

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