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    • 1. 发明专利
    • Material used for resist
    • 材料用于抵抗
    • JPS60195542A
    • 1985-10-04
    • JP5114484
    • 1984-03-19
    • Nippon Oil Co Ltd
    • TSUCHIYA SHIYOUZOUAOKI NOBUO
    • G03F7/20C08G75/00C08G75/22C08L81/06G03C1/72G03C5/08G03F7/004G03F7/039H01L21/027
    • G03F7/039C08G75/22C08L81/06C08L2666/02
    • PURPOSE:To obtain a material for use in a positive type electron beam resist superior in dry etching resistance and high in sensitivity and resolution by using a material composed essentially of a polymer having specified fundamental units in molecular structure. CONSTITUTION:A resist material is composed essentially of a polymer having in the molecular structure, fundamental units each of them represented by formula I in which each of R1-R3 is H or 1-6C hydrocarbon residue; and R4 is 1- 20C hydrocarbon residue optionally substd. by one or more F for H. This polymer is obtained by copolymerizing a compd. represented by formula II with SO2 at -100-+100 deg.C in the presence of a radical catalyst. To use this copolymer as a resist material, it is dissolved in a solvent, such as chloroform to prepare 3-40wt% soln., applied to a substrate, and when needed, it is preheated at 100-200 deg.C.
    • 目的:通过使用基本上由分子结构中具有特定基本单位的聚合物组成的材料,获得用于耐干蚀刻性优异且灵敏度和分辨率高的正型电子束抗蚀剂的材料。 构成:抗蚀剂材料基本上由具有分子结构的聚合物组成,基本单元各自由式I表示,其中R1-R3各自为H或1-6C烃残基; 并且R 4是任选取代的1-20个碳氢化合物残基。 通过一个或多个F用于H.该聚合物通过将化合物 由式II表示,在自由基催化剂存在下,在-100- + 100℃下用SO 2。 为了使用该共聚物作为抗蚀剂材料,将其溶解在溶剂如氯仿中以制备3-40重量%的溶剂,施加到基材上,并且当需要时,其在100-200℃下预热。