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    • 1. 发明专利
    • Pattern forming material and formation of pattern
    • 图案形成与形成
    • JPS6197651A
    • 1986-05-16
    • JP21809184
    • 1984-10-17
    • Nippon Telegr & Teleph Corp
    • MORITA MASAOTANAKA HARUYORI
    • C08L49/00C08K5/28G03F7/012G03F7/038
    • G03F7/0125
    • PURPOSE:To obtain a pattern-forming material capable of forming a resist pattern high in resolution and plasma resistance by incorporating a bisazide compd. and a polymer obtained by (co)polymerizing a specfied substd. acetylene monomer. CONSTITUTION:A resist pattern high in resolution and plasma resistance can be obtained by, preferably, adding Si in an amt. of >=10wt% to a (co)polymer of one or more kinds of compds. represented by formula I, each of R1, R2 being independently optionally substd aromatic or optionally substd. silyl group, and a bisazide compd. represented by formula II, R1 being an absent group directly bonding adjacent groups, or a divalent bonding group, such as -CH2-, -O-, -CH=CH-, -N=N-, -S-, -(C=O)-, -SO2- or formula III, and R2 being H or halogen, and coating a semiconductor substrate with said mixture as a pattern-forming material.
    • 目的:通过掺杂双叠氮化合物来获得能够形成高分辨率和等离子体电阻的抗蚀剂图案的图案形成材料。 和通过(共)聚合指定的子样品获得的聚合物。 乙炔单体。 构成:通过优选地以Si加入Si可以获得高分辨率和等离子体电阻的抗蚀剂图案。 > 10重量%的一种或多种化合物的(共)聚合物。 由式I表示,R 1,R 2各自独立地任选被取代为芳香族或任选被取代。 甲硅烷基和双叠氮化合物。 由式II表示,R1是直接键合相邻基团的不存在的基团,或二价键合基​​团,例如-CH 2 - , - O - , - CH = CH - , - N = N-,-S-, -​​ (C = O) - ,-SO 2 - 或式III,并且R 2为H或卤素,并且用所述混合物涂覆半导体衬底作为图案形成材料。
    • 2. 发明专利
    • Resist material
    • 耐性材料
    • JPS6120032A
    • 1986-01-28
    • JP14162884
    • 1984-07-09
    • Nippon Telegr & Teleph Corp
    • TANAKA HARUYORI
    • C08G77/00C08G77/22C08G77/24G03F7/004G03F7/038G03F7/075G06K9/03
    • G03F7/0757
    • PURPOSE:To obtain a resist material for use in high energy radiation, high in sensitivity and resolution by introducing sensitive groups into the phenyl groups of polyphenylalkylsilsesquioxane high in Tg. CONSTITUTION:The resist material is prepared by replacing part or all of the -CH2Cl groups of the compd. represented by formula I by residues selected from a group of residues represented by formula II. The obtained resist material has -Si-O- bonds which resist to oxygen plasma, silsesquioxane structures of a ladder type high in Tg, and the sensitive groups exhibting high reactivity to high energy radiation and high resolution to the phenyl group in the side chain.
    • 目的:通过将敏感基团引入到Tg高的聚苯基烷基倍半硅氧烷的苯基中,获得用于高能量辐射的抗蚀剂材料,灵敏度和分辨率高。 构成:抗蚀剂材料是通过代替化合物的部分或全部-CH 2 Cl基团来制备的。 由式I表示的残基,其选自由式II表示的残基。 得到的抗蚀剂材料具有抗氧等离子体的-Si-O-键,梯度型Tg高的倍半硅氧烷结构,以及表现出对高能量辐射的高反应性和对侧链中的苯基的高分辨率的敏感组。
    • 3. 发明专利
    • Photosetting resin composition
    • 光固化树脂组合物
    • JPS58191744A
    • 1983-11-09
    • JP7541082
    • 1982-05-07
    • Nippon Telegr & Teleph Corp
    • IWAZAWA AKIRAMORITA MASAOTANAKA HARUYORI
    • C08L61/04C08L61/00C08L71/00C08L71/08C08L71/12G03F7/038
    • PURPOSE: The titled composition useful as an electrical insulating material for printed-wiring board, having improved photosensitivity, electrical insulating properties, processing characteristics, etc., obtained by blending a photosensitive phenoxy resin with a photosensitive phenolic resin, crosslinking agent and a sensitizer.
      CONSTITUTION: 100pts.wt. photosensitive phenoxy resin shown by the formula I [R
      1 is group shown by the formula II, III, IV, or V (Y and Z are H, lower alkyl, or phenyl); R
      2 is group shown by the formula VI (U and V are H, or methyl); X is H, Cl, or Br; n is positive integer], 10W50pts.wt. photosensitive phenolic resin (preferably novolak type phenolic resin) shown by the formula VII(m is positive integer), ≤10pts.wt. crosslinking agent (e.g., ethylene glycol diacrylate, etc.) having good compatibility with the two components, and 0.1W 10pts.wt. sensitizer (e.g., benzoyl methyl ehter, etc.) are dissolved in solvent (e.g., methylene chloride, etc.) common to each of the components, to give a liquid composition.
      COPYRIGHT: (C)1983,JPO&Japio
    • 目的:通过将感光性苯氧基树脂与感光性酚醛树脂,交联剂和敏化剂共混而获得的具有改善的感光性,电绝缘性,加工特性等的,可用作印刷电路板用电绝缘材料的标题组合物。 构成:100pts.wt。 由式I表示的光敏苯氧基树脂[R 1为式II,III,IV或V所示的基团(Y和Z为H,低级烷基或苯基); R2是式VI所示的基团(U和V是H或甲基); X是H,Cl或Br; n为正整数],10-50pts.wt。 由式Ⅶ表示的光敏酚醛树脂(优选酚醛清漆型酚醛树脂)(m为正整数),<= 10pts.wt。 与两种组分具有良好相容性的交联剂(例如乙二醇二丙烯酸酯等)和0.1-10pts.wt。 敏化剂(例如苯甲酰基甲基醚等)溶解在每种组分共同的溶剂(例如二氯甲烷等)中,得到液体组合物。
    • 5. 发明专利
    • Pattern forming material and formation of pattern
    • 图案形成与形成
    • JPS61105542A
    • 1986-05-23
    • JP22598884
    • 1984-10-29
    • Nippon Telegr & Teleph Corp
    • TANAKA HARUYORIMORITA MASAO
    • G03C1/72G03F7/26H01L21/027
    • G03C1/72
    • PURPOSE:To enhance oxygen plasma resistance by incorporating a polymer or copolymer of a specified acetylene compd. and a radical polymn. initiator. CONSTITUTION:The acetylene compd. to be used is one or more selected from compds. represented by formula I in which R1 and R2 are each, independent of each other, H, alkyl, alkenyl, aryl, optionally substd. silyl. A preferable amt. of the radical polymn. initiator for cross-linking the polymer of said compd. of formula I by prebaking is an amt. enough to cross-link the polymer and to change the solubility in solvents, and it is, preferably, 0.5-30wt% of the polymer, when below 0.5wt%, cross-linking does not occur, and when above 30wt%, long-term storage stability and coatability are deteriorated, thus permitting the obtained polymer to be enhanced in oxygen plasma resistance by the presence of the silicon.
    • 目的:通过引入特定乙炔化合物的聚合物或共聚物来增强氧等离子体抗性。 和一个激进的聚合。 发起人 构成:乙炔化合物 要使用的是一个或多个从compds中选择的。 由式I表示,其中R 1和R 2各自独立地为H,烷基,烯基,芳基,任选地被取代。 甲硅烷基 最好的 的激进聚合。 用于交联所述化合物的聚合物的引发剂。 通过预烘烤的方法I是一种。 足以交联聚合物并改变在溶剂中的溶解度,并且优选为聚合物的0.5-30重量%,当低于0.5重量%时不发生交联,而当高于30重量%时, 长期储存稳定性和涂布性劣化,因此通过硅的存在使获得的聚合物的氧等离子体耐受性提高。
    • 6. 发明专利
    • Resist composition
    • 耐腐蚀组合物
    • JPS6120030A
    • 1986-01-28
    • JP14162684
    • 1984-07-09
    • Nippon Telegr & Teleph Corp
    • TANAKA HARUYORI
    • G03F7/004C08L83/08G03F7/038G03F7/075
    • G03F7/0757
    • PURPOSE:To impart sufficient photosensitivity and resolution as a photoresist by forming a resist compsn. consisting of a silicone resin having high glass transition point and a bisazo compd. having high photoreactivity. CONSTITUTION:The silicone resin of silsesquioxane polymer represented by formula I is prepared by substituting the chloro group of chloromethylphenylalkylsilsesquioxane polymer obtained by hydrolyzing a silane compd. The bisamide compd. is at least one kind selected from compds. represented by formula IIin which R1 is a simple bond, -CH2-, or -O-, and R2 is H or halogen. Further, a sensitizer selected from aromatic carbonyl compds. is used. The use of combination of the silicone polymer having high glass transition point and the bisazide compd. having high photoreactivity imparts sufficient photosensitivity and resolution and permits swelling phenomenon in development to be suppressed.
    • 目的:通过形成抗蚀剂,赋予足够的感光度和分辨率作为光致抗蚀剂。 由具有高玻璃化转变点的硅树脂和双偶氮组合物组成。 具有高的光反应性。 构成:由式I表示的倍半硅氧烷聚合物的有机硅树脂通过用氯基甲基苯基烷基倍半硅氧烷聚合物代替水解硅烷化合物而制备。 双酰胺化合物 是从compds中选出的至少一种。 由式IIin表示,其中R 1是简单键,-CH 2 - 或-O-,并且R 2是H或卤素。 此外,选自芳族羰基化合物的敏化剂。 用来。 使用具有高玻璃化转变点的硅氧烷聚合物和双叠氮化合物的组合。 具有高的光反应性赋予足够的光敏性和分辨率并且允许抑制显影中的溶胀现象。
    • 7. 发明专利
    • Resist material and its preparation
    • 耐材料及其制备
    • JPS6120031A
    • 1986-01-28
    • JP14162784
    • 1984-07-09
    • Nippon Telegr & Teleph Corp
    • TANAKA HARUYORIMORITA MASAO
    • G03F7/004C08G77/00C08G77/06C08G77/22C08G77/24G03F7/038G03F7/075
    • G03F7/0757
    • PURPOSE:To obtain a resist material made of a siloxane polymer high in sensitivity and resolution by introducing chloromethyl groups into a silicone polymer having phenyl groups. CONSTITUTION:The resist material is made of a siloxane polymer represented by formula I having R1, R2, R3 being selected from alkyl, optionally substd. phenyl in the side chain and it is synthesized by subjecting a dichlorosilane compd. represented by formula II and diphenylsilanediol to dehydrochlorination condensation reaction. Thi resist material has high glass transition point, and the presence of the chloromethyl groups linked to the phenyl groups imparts high reactivity to high energy radiation and high resolution. The high content of Si enhances oxygen plasma resistance.
    • 目的:通过将氯甲基引入具有苯基的硅氧烷聚合物中,获得灵敏度和分辨率高的硅氧烷聚合物制成的抗蚀剂材料。 构成:抗蚀剂材料由式I表示的硅氧烷聚合物制成,其中R 1,R 2,R 3选自任选被取代的烷基。 苯基在侧链中,并通过使二氯硅烷化合物 由式II和二苯基硅烷二醇代表脱氯化氢缩合反应。 抗硫化物材料具有高玻璃化转变点,与苯基连接的氯甲基的存在赋予高能量辐射和高分辨率的高反应性。 Si的高含量提高了氧等离子体电阻。
    • 8. 发明专利
    • Polysiloxane containing benzene ring and its preparation
    • 含有苯并噻吩的聚硅氧烷及其制备方法
    • JPS59193925A
    • 1984-11-02
    • JP6689283
    • 1983-04-18
    • Nippon Telegr & Teleph Corp
    • IMAMURA SABUROUMORITA MASAOTANAKA HARUYORITAMAMURA TOSHIAKIKOGURE OSAMU
    • C08G77/38B01J41/08B01J41/12B01J47/12C08G77/00C08G77/22C08G77/24G03F7/038H01L21/027H01L21/30
    • PURPOSE: To obtain a compound having the group of formula -CH
      2 Cl, having high molecular weight and reactivity, and useful as a starting material for the synthesis of various derivatives, by reacting a phenyl-containing siloxane oligomer, etc. with a chloromethyl lower alkyl ether in the presence of a Friedel- Crafts catalyst.
      CONSTITUTION: The objective polysiloxane having the recurring unit of formula (R, R' and R" and H, alkyl or phenyl; l, m and n are 0 or positive integer provided that l and m are not 0 at the same time) can be prepared by reacting (A) a phenyl-containing siloxane oligomer or a phenyl-containing polysiloxane having low molecular weight with (B) a chloromethyl lower alkyl ether in the presence of (C) a Friedel-Crafts catalyst preferably at -10°CW room temperature for 30minW30hr.
      USE: Useful as a resist material for high energy radiation such as electron beam, etc., an electrically insulating material, a surface treatment agent such as water repellent, an ion exchange membrane, etc.
      COPYRIGHT: (C)1984,JPO&Japio
    • 目的:为了获得具有高分子量和反应性的具有式-CH 2 Cl基团的化合物,并且可用作合成各种衍生物的起始原料,通过使含苯基的硅氧烷低聚物等与氯甲基低级烷基 乙醚在Friedel-Crafts催化剂存在下进行。 构成:具有式(R,R'和R“和H,烷基或苯基; l,m和n的重复单元的目标聚硅氧烷是0或正整数,条件是l和m不同时为0) (A)含有苯基的硅氧烷低聚物或含低分子量的含苯基的聚硅氧烷与(B)氯甲基低级烷基醚在(C)Friedel-Crafts催化剂的存在下反应制备,优选在-10℃ 室温30min-30hr。 用途:作为电子束等高能辐射的抗蚀剂材料,电绝缘材料,防水剂等表面处理剂,离子交换膜等。
    • 9. 发明专利
    • Manufacture of photosensitive resin
    • 光敏树脂的制造
    • JPS5953535A
    • 1984-03-28
    • JP16323882
    • 1982-09-21
    • Nippon Telegr & Teleph Corp
    • IWAZAWA AKIRATANAKA HARUYORIMORITA MASAO
    • C08F251/00C08F299/02C08G65/00C08G65/48G03F7/038
    • PURPOSE: To obtain titled resin of high sensitivity, with excellent film-formability and thermal properties, suitable for high-density printed-wiring board, by incorporating (meth)acrylic acid in a polyhydroxyether followed by reaction in an organic solvent in the presence of dehydrating agent and catalyst.
      CONSTITUTION: The objective resin of formula VI (R
      2 is H or methyl) can be obtained, by reaction in an organic solvent (e.g., methylene chloride) at ca. room temperature for 120W240hr between (A) a polyhydroxyether of formula I [R
      1 is of formula II, III, IV, or V (Y and Z are each H, lower alkyl, or phenyl, X is H, Cl, or Br; n is 100W700)] and (B) acrylic or methacrylic acid in the presence of (1) as a dehydrating agent, a dicyclohexyl carboimide and (2) as a catalyst, an amine (in particular, 4-dimethyl aminopyridine).
      COPYRIGHT: (C)1984,JPO&Japio
    • 目的:为了获得高灵敏度的标题树脂,具有优异的成膜性和热性能,适用于高密度印刷电路板,通过在聚羟基醚中加入(甲基)丙烯酸,随后在有机溶剂中在有机溶剂存在下反应 脱水剂和催化剂。 构成:通过在有机溶剂(例如二氯甲烷)中的反应,可以获得式VI的目标树脂(R2是H或甲基)。 (A)式I的聚羟基醚[R1为式Ⅱ,Ⅲ,Ⅳ或Ⅴ(Y和Z各自为H,低级烷基或苯基,X为H,Cl或Br)的室温为120-240hr ; n为100-700)]和(B)丙烯酸或甲基丙烯酸,在(1)脱水剂,二环己基碳酰亚胺和(2)催化剂存在下,胺(特别是4-二甲基氨基吡啶) 。
    • 10. 发明专利
    • Photosensitive resin and manufacture of the same
    • 感光树脂及其制造方法
    • JPS5953534A
    • 1984-03-28
    • JP16323782
    • 1982-09-21
    • Nippon Telegr & Teleph Corp
    • IWAZAWA AKIRATANAKA HARUYORIMORITA MASAO
    • G03F7/038C08F290/00C08F299/00C08F299/02C08G65/00C08G65/48G03F7/004
    • PURPOSE: To obtain titled resin with excellent photosensitivity, thermal properties, electrical insulation, and processability, by incorporating a (2-methyl) glycidyl (meth)acrylate in a polyhydroxyether to carry out a reaction on heating.
      CONSTITUTION: (A) A polyhydroxyether of formula I [R
      1 is of formula II, III, IV, or V (Y and Z are each H, lower alkyl, or phenyl; X is H, Cl, or Br; R
      2 is H or methyl; n is 100W700)] is incorporated with (B) a (2-methyl) glycidyl (meth) acrylate of formula VI (R
      2 is H or methyl) in an amount of ten times that of the component (A) followed by dissolution on heating to 75W95°C and carrying out a reaction in a non-solvent system for 2W4hr to obtain the objective resin of formula VII. Application of triethyl benyl ammonium chloride as a catalyst would lead to high yield. A photosensitive liquid can be prepared by dissolving the above resin in a desired solvent; in this case, a combination with a bulking agent being practically preferable. This photosensitive resin will be suitable for combined use as both resist and electrical insulating material for the print circuit production in the electronics industry.
      COPYRIGHT: (C)1984,JPO&Japio
    • 目的:通过在聚羟基醚中加入(2-甲基)(甲基)丙烯酸缩水甘油酯来进行加热反应,得到具有优异的光敏性,热性能,电绝缘性和加工性的标题树脂。 (A)式I的聚羟基醚[R 1具有式II,III,IV或V(Y和Z各自为H,低级烷基或苯基; X为H,Cl或Br; R 2为H或 甲基; n为100-700)]与式(Ⅵ)的(B)(Ⅵ)的(2-甲基)(甲基)丙烯酸缩水甘油酯(R2是H或甲基) 通过加热至75-95℃溶解并在非溶剂体系中进行反应2-4小时,得到式VII的目标树脂。 三乙基氯化苄作为催化剂的应用将导致高产率。 可以通过将上述树脂溶解在所需溶剂中来制备感光性液体; 在这种情况下,实际上优选与填充剂的组合。 这种感光性树脂将适用于组合使用作为用于电子工业中印刷电路生产的抗蚀剂和电绝缘材料。