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1. 发明专利

KR20210024980A KR20210024980A - Sensor device 审中-公开
公开(公告)号：KR20210024980A
公开(公告)日：2021-03-08
申请号：KR1020200107501A
申请日：2020-08-26
申请人： 슈투름 머쉬넨- & 안라겐바우 게엠베하
发明人： 볼프강 울리히
IPC分类号： G01B11/06 , B05B12/08 , B05B12/12 , B05B13/02 , G01B9/02 , G01B11/02
CPC分类号： G01B11/0616 , B05B12/084 , B05B12/124 , B05B13/0221 , G01B11/022 , G01B11/14 , G01B11/26 , G01B9/02042 , G01D5/26 , F16D2250/0046 , F16D65/127 , G01B11/0683 , G01B2210/44
摘要： 본 발명은 코팅 공정의 일부로서 디스크의 코팅을 검사하기 위한 센서 장치에 관한 것이다. 센서 장치는 디스크에 적용된 코팅의 층 두께를 결정하기 위한 제 1 광학 센서 시스템을 포함하고, 회전 장치를 포함한다. 본 발명은 제 1 광학 센서 시스템이 적어도 하나의 제 1 위치 기반 측정값과 하나의 제 2 위치 기반 측정값을 동시에 식별하도록 설계되고, 제 1 및 제 2 위치 기반 측정값은 센서 시스템과 디스크 표면 사이의 거리를 기술하는 것을 특징으로 한다. 그 결과, 센서 시스템은 디스크의 코팅된 영역의 제 1 위치 기반 측정값 및 디스크의 코팅되지 않은 영역의 제 2 위치 기반 측정값이 식별되도록 구성된다. 또한, 제 1 광학 센서 시스템은 중앙 영역에서 에지로 연장되는 하나 이상의 선형 가이드를 포함한다. 또한, 제 1 및 제 2 위치 기반 측정값의 도움으로 제 1 위치 기반 측정값의 위치에서 디스크의 층 두께를 계산하기 위한 제어 및 분석 장치가 제공된다. 또한, 본 발명은 디스크에 적용된 코팅의 층 두께를 결정하기 위해 코팅을 검사하는 단계를 포함하는 디스크 코팅 방법에 관한 것이다.

2. 发明专利

JP5066318B2 Apparatus and method for detecting a killer particles in a chemical mechanical polishing 有权
公开(公告)号：JP5066318B2
公开(公告)日：2012-11-07
申请号：JP2001578938
申请日：2001-04-19
申请人：ケーエルエー−テンカーコーポレイション
发明人：セスーラマン・アナンザ・アール． , チャオ・グオヘング , ニコーナハド・メアダッド
IPC分类号： B24B49/12 , G01N15/02 , B24B37/00 , B24B37/005 , B24B37/20 , B24D7/12 , G01B11/00 , G01B11/06 , G01N1/32 , G01N1/34 , G01N21/00 , G01N21/15 , G01N21/21 , G01N21/45 , G01N21/47 , G01N21/94 , G01N21/956 , H01L21/304 , H01L21/66
CPC分类号： B24B49/12 , B24B37/005 , B24D7/12 , G01B11/00 , G01B11/0683 , G01N21/15 , G01N21/94
摘要： Disclosed is a system for detecting anomalies associated with a sample. The system includes an objective arranged proximate to a sample while the sample is undergoing chemical mechanical polishing and a beam source arranged to generate an incident beam and direct the incident beam through the objective and toward the sample while the sample is undergoing chemical mechanical polishing. The system also includes a sensor arranged to detect a scattered beam reflected from at least one anomaly associated with the sample while the sample is undergoing chemical mechanical polishing, the scattered beam being in response to the incident beam. The scattered beam indicates a characteristic of the anomaly, such as particle size.

3. 发明专利

JP4955240B2 Film measuring device and the coating device using the same 有权
公开(公告)号：JP4955240B2
公开(公告)日：2012-06-20
申请号：JP2005254331
申请日：2005-09-02
申请人：パナソニック株式会社
发明人：数孝寺元 , 徹也林 , 万郷藤川
IPC分类号： G01B11/06 , B05C11/00
CPC分类号： G01B11/0625 , B05C1/0826 , G01B11/0683

5. 发明专利

JP2010540768A Apparatus and method for stabilizing an elongated metallic strip and visual surveillance 有权
公开(公告)号：JP2010540768A
公开(公告)日：2010-12-24
申请号：JP2010526238
申请日：2008-09-08
申请人：エービービーリサーチリミテッド
发明人：ボーエリクソン， , マッツモランデル， , ペーテルレフグレン，
IPC分类号： C23C2/00 , C23C2/16 , C23C2/40
CPC分类号： B05C11/06 , C23C2/003 , C23C2/20 , C23C2/40 , G01B11/0683 , G01N21/8914 , G01N2021/8427 , G01N2021/8918
摘要：溶融金属の槽（２）に連続的に通されることによって金属層でコーティングされる細長い金属帯状片（１）を、所定の搬送経路（Ｘ）に沿って搬送方向（２２）に連続的に搬送される際に視覚的に監視し、安定させるための装置および方法。帯状片（１）は、槽（１）から所定の搬送経路（Ｘ）に沿って搬送されるように意図されている。装置は、所定の搬送経路（Ｘ）の各側に配置された少なくとも１つの第１組の電磁安定化手段（８、９）を備える電磁安定化装置（７）を備えている。さらに、装置は、空気流を帯状片の搬送方向（２２）を横切りかつ帯状片の基本的に全幅を横切る線にて向けることによって帯状片（１）から余分な溶融金属を取り去るためのワイプ装置（４）を備えている。ワイプ装置は、帯状片（１）の各側に配置された少なくとも１つのエアナイフを有する少なくとも１組のエアナイフ（５、６）を備えている。第１の画像読み取り装置（１６）が、所定の搬送経路（Ｘ）に関する帯状片の実際の位置の複数の画像を取得するように構成されている。第２および第３の画像読み取り装置（１９、２０）が、帯状片の表面の１つ以上の画像を取得するように構成されている。

6. 发明专利

JP2010199557A System and method for in-situ monitor and control of film thickness and trench depth 审中-公开
标题翻译：用于现场监测和控制膜厚度和深度深度的系统和方法
公开(公告)号：JP2010199557A
公开(公告)日：2010-09-09
申请号：JP2009289774
申请日：2009-12-21
申请人： Verity Instruments Inc , ヴェリティーインストルメンツ,インコーポレイテッド
发明人： KUENY ANDREW WEEKS
IPC分类号： H01L21/3065 , G01B11/06 , G01R31/312 , H01L21/205 , H01L21/66
CPC分类号： G01B11/0683 , G01B11/0625 , G01N21/8422 , G06K7/0095 , H01L22/12
摘要： PROBLEM TO BE SOLVED: To provide a system, method, and a computed program for monitoring the film thickness and trench depth in semiconductor processing. SOLUTION: Reflectivity data are collected from the surface of a wafer using in-situ monitoring, and nominal reflectivity is determined from the ratio of the current spectrum to a reference spectrum. The reference spectrum is taken from a reference wafer consisting entirely of a material in which the reflection properties are well characterized. Both the observed and calculated data are transformed such that their vertical extents and spectrally averaged values coincide. By transforming both the observed data and calculated model such that their vertical extents and spectrally averaged values coincide, large errors in both the data and the model can be tolerated. A merit function is employed which measures the agreement between observed data and the model with a particular choice of parameters. The merit function may be minimized using a standard numerical technique for finding a deep minimum in the merit function at the correct values of the parameters. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供用于监测半导体处理中的膜厚度和沟槽深度的系统，方法和计算程序。解决方案：使用原位监测从晶片的表面收集反射率数据，并根据当前光谱与参考光谱的比率确定标称反射率。参考光谱取自完全由反射特性被良好表征的材料组成的参考晶片。观察和计算的数据都被转换，使得其垂直范围和光谱平均值重合。通过转换观测数据和计算模型，使其垂直范围和光谱平均值一致，可以容忍数据和模型中的大误差。采用优点函数，通过特定的参数选择来测量观测数据与模型之间的一致性。可以使用用于在参数的正确值下在优值函数中找到深度最小值的标准数值技术来最小化优值函数。版权所有（C）2010，JPO＆INPIT

8. 发明专利

JP2008203090A Wavelength selection method, film thickness measurement method, film thickness measuring device, and system for manufacturing thin-film silicon-based device 有权
标题翻译：波长选择方法，薄膜厚度测量方法，薄膜厚度测量装置和用于制造薄膜硅基器件的系统
公开(公告)号：JP2008203090A
公开(公告)日：2008-09-04
申请号：JP2007039594
申请日：2007-02-20
申请人： Mitsubishi Heavy Ind Ltd , 三菱重工業株式会社
发明人： SAKAI TOMOTSUGU , IIDA MASAMI , KAWAZOE KOHEI
IPC分类号： G01B11/06
CPC分类号： G01B11/0633 , G01B11/0683 , G01B11/303
摘要： PROBLEM TO BE SOLVED: To reduce measurement errors in film thickness measurement which ends up being included in the measurement result which is larger than the tolerance level, as the amount of transmitted light varies, when the thickness of a thin film different in unevenness conditions of the surface of the thin film or a board is evaluated.
SOLUTION: In this wavelength selection method for selecting a wavelength to be used for the thickness measurement of the thin film, rays of illumination light of different wavelengths are irradiated to a plurality of sample films which areformed on the board and different in film quality conditions and thickness; an evaluation value relating to the amount of transmitted light, produced when illumination light of each wavelength is irradiated, is measured, respectively, based on the measured result; film thickness properties representing correlation between an evaluation value and the film thickness in each film quality condition, is produced for each wavelength; and a wavelength where the measurement of the difference in the evaluation values by the film quality conditions lie within a predetermined range in each film thickness properties can be selected.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：为了减少最终包含在大于公差水平的测量结果中的测量误差，随着透射光量的变化，当薄膜的厚度不同时评估薄膜或板的表面的不均匀条件。解决方案：在用于选择用于薄膜厚度测量的波长的这种波长选择方法中，不同波长的照明光线照射到形成在板上的多个样品膜，膜的不同质量条件和厚度; 基于测定结果分别测定与照射各波长的照明光时产生的透射光量有关的评价值; 对于每个波长产生表示每个膜质量条件下的评价值与膜厚度之间的相关性的膜厚特性; 并且可以选择通过膜质量条件评价值的差异的测量在每个膜厚度性质在预定范围内的波长。版权所有（C）2008，JPO＆INPIT

9. 发明专利

JP2007326770A Method and device for treating a semiconductor wafer 有权
标题翻译：用于处理半导体波形的方法和装置
公开(公告)号：JP2007326770A
公开(公告)日：2007-12-20
申请号：JP2007131797
申请日：2007-05-17
申请人： Siltronic Ag , ジルトロニックアクチエンゲゼルシャフトSiltronic AG
发明人： MURPHY BRIAN , FEIJOO DIEGO , WAHLICH REINHOLD
IPC分类号： C30B29/06 , C30B33/02 , H01L21/306 , H01L21/31 , H01L27/12
CPC分类号： H01L21/30604 , C30B29/06 , C30B33/005 , G01B11/0641 , G01B11/0675 , G01B11/0683 , G01B11/306 , H01L22/12 , H01L22/20
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor wafer which is suitable for manufacturing an element which has a line width of 65 nm or smaller and in which flat nature, nano-topography, and layer homogeneity are improved. SOLUTION: (a) The position-dependent measuring of a parameter characterizing a semiconductor wafer 5 is performed to determine a position-dependent value of the parameter over an entire surface of the semiconductor wafer 5. (b) The entire surface of the semiconductor wafer 5 is oxidized under the action of an oxidizing agent with simultaneous exposure of the entire surface of the semiconductor wafer 5, and the oxidation rate and thus the thickness of the resulting oxide layer are dependent on the light intensity at the surface of the semiconductor wafer 5. (c) The oxide layer is removed. In this case, the light intensity in step (b) is predefined in a position-dependent manner such that differences in the position-dependent values of the parameter measured in step (a) are reduced by the position-dependent oxidation rate resulting in step (b) and subsequent removal of the oxide layer in step (c). COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种半导体晶片，其适用于制造线宽为65nm以下的元件，其中平坦性，纳米形貌和层均匀性得到改善。（a）执行表征半导体晶片5的参数的位置相关测量，以确定参数在半导体晶片5的整个表面上的位置相关值。（b）整个表面半导体晶片5在氧化剂的作用下被氧化，同时曝光半导体晶片5的整个表面，并且氧化速率以及因此得到的氧化物层的厚度取决于表面的光强度半导体晶片5.（c）去除氧化物层。在这种情况下，步骤（b）中的光强度以位置相关的方式被预先定义，使得在步骤（a）中测量的参数的位置相关值的差异被位置依赖的氧化速率降低，导致步骤（b）并随后在步骤（c）中除去氧化物层。版权所有（C）2008，JPO＆INPIT

10. 发明专利

JP2007263599A Method and apparatus for evaluating state of application 审中-公开
标题翻译：用于评估应用状态的方法和装置
公开(公告)号：JP2007263599A
公开(公告)日：2007-10-11
申请号：JP2006085742
申请日：2006-03-27
申请人： Mazda Motor Corp , マツダ株式会社
发明人： KIMURA YOSHIAKI , SUGA YASUYUKI , SUZUKI TAKAFUMI , BIHON KAZUHIKO
IPC分类号： G01B11/06 , B05C11/00 , B05D3/00
CPC分类号： B05B12/084 , G01B11/0608 , G01B11/0683
摘要： PROBLEM TO BE SOLVED: To accurately and appropriately evaluate the state of application for every divided section among a plurality of divided sections acquired by longitudinally dividing an applied region in the case of evaluating the state of application of an applied film formed in a band shape by continuously applying an applied material to the band-shaped applied region of an object to be applied in consideration of changes in the direction of a three-dimensional curved surface in the case that the applied film is formed in a three-dimensional curve and in consideration of changes in conditions of application in the case that conditions of application for the application of the applied material have changed. SOLUTION: The applied region 9 is longitudinally divided to set the plurality of divided sections, and the applied region 9 is divided in lateral directions to set a plurality of divided lanes continuously extending in longitudinal directions of the applied region 9. A detection head 16 for irradiating the applied region 9 with spot light 20a and receiving its reflected light is made to scan along a primer applied film 5. Light reception data of light received by the detection head 16 is processed for every one of the plurality of divided lanes for each of the plurality of divided sections to evaluate the state of application on the basis of the light reception data. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：为了在评估形成在所述涂覆膜中的涂膜的施加状况的情况下，通过纵向划分涂布区域而获得的多个分割部分中的每个分割部分的准确和适当的评估状态考虑到在施加的膜形成三维曲线的情况下的三维曲面的方向的变化，将施加的材料连续施加到要施加的物体的带状施加区域的带状考虑到申请材料的申请条件发生变更的情况下，适用条件发生变化。解决方案：施加区域9纵向分割以设置多个分割部分，并且施加区域9沿横向方向分割以设置在施加区域9的纵向方向上连续延伸的多个分开的车道。检测使用用点光源20a照射施加区域9并接收其反射光的头部16沿着底漆涂敷膜5进行扫描。由多个分隔线路中的每一条处理由检测头16接收的光的光接收数据对于多个分割部分中的每一个，基于光接收数据来评估应用状态。版权所有（C）2008，JPO＆INPIT

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