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2. 发明专利

JP2008500457A Variable quadrupole electromagnet array used in particular in a multi-step process to form a metal barrier in the sputtering reactor 有权
公开(公告)号：JP2008500457A
公开(公告)日：2008-01-10
申请号：JP2007515204
申请日：2005-05-20
申请人：アプライドマテリアルズインコーポレイテッドApplied Materials,Incorporated
发明人：タザ−ジンガン， , プラブーランゴパラジャ， , アルヴィンドサンダッラジャン， , アンドリュー，エス．ジラルド， , エドワード，ピー．，アイヴィーハモンド， , キンユーフー， , ジョン，シー．フォスター， , マーク．エー．ペリン，
IPC分类号： C23C14/34 , C23C14/04 , C23C14/06 , C23C14/16 , C23C14/32 , C23C14/35 , C23C16/00 , C23F1/02 , C23F4/00 , H01J37/32 , H01J37/34 , H01L21/28 , H01L21/285 , H01L21/768 , H05H1/24 , H05H1/46
CPC分类号： H01J37/3266 , C23C14/046 , C23C14/0641 , C23C14/165 , C23C14/358 , C23F4/00 , H01J37/321 , H01J37/32623 , H01J37/32688 , H01J37/3408 , H01L21/2855 , H01L21/76844 , H01L21/76846 , H01L21/76865
摘要： A multi-step process performed in a plasma sputter chamber including sputter deposition from the target and argon sputter etching of the substrate. The chamber includes a quadruple electromagnetic coil array coaxially arranged in a rectangular array about a chamber axis outside the sidewalls of a plasma sputter reactor in back of an RF coil within the chamber. The coil currents can be separately controlled to produce different magnetic field distributions, for example, between a sputter deposition mode in which the sputter target is powered to sputter target material onto a wafer and a sputter etch mode in which the RF coil supports the argon sputtering plasma. A TaN/Ta barrier is first sputter deposited with high target power and wafer bias. Argon etching is performed with even higher wafer bias. A flash step is applied with reduced target power and wafer bias.

4. 发明专利

JP2005350751A Sputtering apparatus and method, and program for controlling sputtering 有权
标题翻译：溅射装置和方法，以及控制溅射的程序
公开(公告)号：JP2005350751A
公开(公告)日：2005-12-22
申请号：JP2004175016
申请日：2004-06-14
申请人： Shibaura Mechatronics Corp , 芝浦メカトロニクス株式会社
发明人： KUROIWA SHUNJI
IPC分类号： C23C14/34 , C23C14/35 , C23C14/54 , G11B7/26
CPC分类号： C23C14/35 , C23C14/358 , C23C14/54 , C23C14/542
摘要： PROBLEM TO BE SOLVED: To provide a sputtering apparatus and method capable of assuring the uniformity of a film thickness from the start of using a target till the end thereof with a simple configuration and a program for controlling sputtering.
SOLUTION: The apparatus is provided with the target 15 arranged to face a workpiece 19 to be treated, a permanent magnet unit M for depositing the material of the target 15 on the workpiece to be treated in the form of a film by generating a high-density plasma by a magnetic field, a rotation mechanism 9 for rotating the permanent magnet unit M, and a revolution controller 7 for stepwise changing the number of revolutions of the permanent magnet unit M by the rotation mechanism 9. The revolution controller 7 has a revolution setting section 702b for setting the number of revolutions that can be switched, a switching time setting section 702a for setting the time for switching, a detection unit 703 for detecting the time for switching, a selection section 704 for selecting the number of revolutions at the time for switching, and a switching section 705 for instructing the switching to the selected number of revolutions.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种溅射装置和方法，其能够以简单的构造和用于控制溅射的程序确保从开始使用目标到其末端的膜厚度的均匀性。解决方案：该设备设置有目标15，其布置成面对待处理的工件19;永磁体单元M，用于将待处理的待处理的材料15的材料以膜的形式沉积，通过磁场的高密度等离子体，用于旋转永磁体单元M的旋转机构9，以及用于通过旋转机构9逐步改变永磁体单元M的转数的旋转控制器7.旋转控制器7 具有用于设定可切换的转数的转动设定部702b，设定切换时间的切换时刻设定部702a，检测切换时间的检测部703，用于选择切换次数的选择部704 在切换时的转数，以及用于指示切换到所选择的转数的切换部705。版权所有（C）2006，JPO＆NCIPI

5. 发明专利

JP6117588B2 Cu配線の形成方法有权
公开(公告)号：JP6117588B2
公开(公告)日：2017-04-19
申请号：JP2013067196
申请日：2013-03-27
申请人：東京エレクトロン株式会社
发明人：石坂忠大 , 鈴木健二 , 島田篤史
IPC分类号： H01L21/768 , H01L23/532 , H01L21/285 , C23C14/34 , C23C16/16 , H01L21/3205
CPC分类号： H05K3/107 , C23C14/358 , H01L21/02063 , H01L21/2855 , H01L21/28556 , H01L21/3105 , H01L21/76814 , H01L21/76826 , H01L21/76846 , H01L21/76855 , H01L23/53238 , H01L23/5329 , H01L2924/0002 , H05K1/0306 , H05K2201/0338

6. 发明专利

JP5550565B2 Sputtering apparatus and sputtering method 有权
公开(公告)号：JP5550565B2
公开(公告)日：2014-07-16
申请号：JP2010542842
申请日：2009-12-08
申请人：株式会社アルバック
发明人：森本　　直樹 , 純一濱口
IPC分类号： C23C14/34 , C23C14/35 , H01L21/285
CPC分类号： H01J37/3405 , C23C14/046 , C23C14/3407 , C23C14/351 , C23C14/358 , H01J37/3447 , H01J37/3452 , H01J37/3458 , H01L21/2855

7. 发明专利

JP5347868B2 Mounting table structure and a plasma film forming apparatus 有权
公开(公告)号：JP5347868B2
公开(公告)日：2013-11-20
申请号：JP2009218381
申请日：2009-09-24
申请人：東京エレクトロン株式会社
发明人：敏章藤里 , 志郎林 , 宏行横原
IPC分类号： C23C14/34 , H01L21/683
CPC分类号： H01L21/6831 , C23C14/358 , C23C14/50 , H01J37/321 , H01J37/32577 , H01J37/3405
摘要： A mounting table structure includes a mounting table body, made of a conductive material, for mounting thereon the processing target object and serving as an electrode; a base table, made of a conductive material, disposed below the mounting table body with a gap therebetween in a state insulated from the mounting table body; a support column, connected to the ground side, for supporting the base table; a high frequency power supply line, connected to the mounting table body, for supplying a high frequency bias power to the mounting table body; and a power stabilization capacitor provided between the ground side and a hot side to which the high frequency bias power is applied. Here, an electrostatic capacitance of the power stabilization capacitor is set to be larger than an electrostatic capacitance of a stray capacitance between the mounting table body and the protective cover member.

8. 发明专利

JP5291338B2 Variable quadrupole electromagnet array used in particular in a multi-step process to form a metal barrier in the sputtering reactor 有权
公开(公告)号：JP5291338B2
公开(公告)日：2013-09-18
申请号：JP2007515204
申请日：2005-05-20
申请人：アプライドマテリアルズインコーポレイテッドApplied Materials,Incorporated
发明人：タザ−ジンガン， , キンユーフー， , アルヴィンドサンダッラジャン， , エドワード，ピー．，アイヴィーハモンド， , プラブーランゴパラジャ， , ジョン，シー．フォスター， , マーク．エー．ペリン， , アンドリュー，エス．ジラルド，
IPC分类号： C23C14/54 , C23C14/04 , C23C14/06 , C23C14/16 , C23C14/32 , C23C14/34 , C23C14/35 , C23C16/00 , C23F1/02 , C23F4/00 , H01J37/32 , H01J37/34 , H01L21/28 , H01L21/285 , H01L21/768 , H05H1/24 , H05H1/46
CPC分类号： H01J37/3266 , C23C14/046 , C23C14/0641 , C23C14/165 , C23C14/358 , C23F4/00 , H01J37/321 , H01J37/32623 , H01J37/32688 , H01J37/3408 , H01L21/2855 , H01L21/76844 , H01L21/76846 , H01L21/76865
摘要： A multi-step process performed in a plasma sputter chamber including sputter deposition from the target and argon sputter etching of the substrate. The chamber includes a quadruple electromagnetic coil array coaxially arranged in a rectangular array about a chamber axis outside the sidewalls of a plasma sputter reactor in back of an RF coil within the chamber. The coil currents can be separately controlled to produce different magnetic field distributions, for example, between a sputter deposition mode in which the sputter target is powered to sputter target material onto a wafer and a sputter etch mode in which the RF coil supports the argon sputtering plasma. A TaN/Ta barrier is first sputter deposited with high target power and wafer bias. Argon etching is performed with even higher wafer bias. A flash step is applied with reduced target power and wafer bias.

9. 发明专利

JP5154778B2 Hollow body plasma uniformity adjustment device and method 有权
公开(公告)号：JP5154778B2
公开(公告)日：2013-02-27
申请号：JP2006259418
申请日：2006-09-25
申请人：東京エレクトロン株式会社 , ト−キョ−・エレクトロン・アメリカ・インコーポレーテッド
发明人：ジョゼフ・ブルカ
IPC分类号： C23C14/34 , H01L21/285 , H01L21/3065
CPC分类号： C23C14/358

10. 发明专利

JP2011068918A Structure of mounting table, and plasma film-forming apparatus 有权
标题翻译：安装表和等离子体成膜装置的结构
公开(公告)号：JP2011068918A
公开(公告)日：2011-04-07
申请号：JP2009218381
申请日：2009-09-24
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： FUJISATO TOSHIAKI , HAYASHI SHIRO , YOKOHARA HIROYUKI
IPC分类号： C23C14/34 , H01L21/683
CPC分类号： H01L21/6831 , C23C14/358 , C23C14/50 , H01J37/321 , H01J37/32577 , H01J37/3405
摘要： PROBLEM TO BE SOLVED: To provide a structure of a mounting table, which can keep a reproducibility of plasma treatment high by stably charging a high-frequency power for bias to the plasma side. SOLUTION: The structure of the mounting table that mounts a body W to be treated thereon on which a metal film is formed, and is surrounded by a protective cover 92 which is connected to the ground side at a space 94, includes: a mounting table body 48 which works as an electrode that mounts the body to be treated thereon; a base platform 50 which is arranged in an insulated state below the mounting table body; a post 46 which supports the base platform and is connected to the ground side; a high-frequency-power-feeding line 70 which is connected to the mounting table body and supplies the high-frequency power for the bias; and a capacitor part 120 for stabilizing the electric power, which is formed between the hot side to which the high-frequency power is applied and the ground side. The electrostatic capacity of the capacitor part for stabilizing the electric power is set so as to be larger than that of the floating capacity formed between the mounting table body and the protective cover member. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种安装台的结构，其可以通过稳定地将用于偏压的高频电力充电到等离子体侧来保持等离子体处理的再现性。解决方案：安装在其上形成有金属膜的被处理体W的安装台的结构并且由在空间94处连接到接地侧的保护盖92包围，包括：安装台体48，其作为将被处理物体安装在其上的电极; 基座平台50，其安装在安装台主体下方的绝缘状态; 支撑基座并连接到地面的支柱46; 高频供电线路70，其连接到安装台主体并提供用于偏置的高频电力; 以及用于稳定电力的电容器部分120，其形成在施加高频电力的热侧与接地侧之间。用于稳定电力的电容器部分的静电电容被设定为大于在安装台体和保护盖构件之间形成的浮动能力的静电电容。版权所有（C）2011，JPO＆INPIT

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