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1. 发明专利

JP2005350291A Group iii nitride crystal, its producing method, group iii nitride crystal substrate, and semiconductor device 有权
标题翻译： III类硝酸盐晶体，其制造方法，III类氮化物晶体基板和半导体器件
公开(公告)号：JP2005350291A
公开(公告)日：2005-12-22
申请号：JP2004171452
申请日：2004-06-09
申请人： Yusuke Mori , Sumitomo Electric Ind Ltd , 住友電気工業株式会社 , 勇介森
发明人： SASAKI TAKATOMO , MORI YUSUKE , YOSHIMURA MASASHI , KAWAMURA SHIRO , NAKAHATA SEIJI , HIROTA TATSU
IPC分类号： C30B29/38 , C30B9/00 , C30B9/10 , C30B11/00 , C30B11/06 , C30B29/40 , H01L33/16 , H01L33/32 , H01L33/00
CPC分类号： C30B29/403 , C30B9/00 , C30B11/00 , H01L33/0075 , H01L33/32
摘要： PROBLEM TO BE SOLVED: To provide a group III nitride crystal having a low dislocation density; and a method for producing the same.
SOLUTION: The method for producing the group III nitride crystal includes a process for preparing a seed crystal 10 and a process for growing a first group III nitride crystal 21 on the seed crystal 10 by a liquid phase method. In the process for growing the first group III nitride crystal 21 on the seed crystal 10, the crystal growth speed V
H in the direction parallel to the principal plane 10h of the seed crystal 10 is set to be higher than the crystal growth speed V
V in the direction vertical to the principal plane 10h of the seed crystal 10. The group III nitride crystal produced by the method has a dislocation density in the plane parallel to the principal plane 10h of the seed crystal 10 of ≤5×10
6 pieces/cm
2 .
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供具有低位错密度的III族氮化物晶体; 及其制造方法。解决方案：用于制备III族氮化物晶体的方法包括制备晶种10的方法和通过液相法在晶种10上生长第一III族氮化物晶体21的工艺。在晶种10上生长第一III族氮化物晶体21的过程中，将晶种10的主平面10h平行的方向的晶体生长速度V SB 在晶种10的主平面10h的垂直方向上的晶体生长速度V SB 。通过该方法制造的III族氮化物晶体在平行于主平面的平面中具有位错密度晶种10的10h≤5×10 6 个/ cm 2 。版权所有（C）2006，JPO＆NCIPI

2. 发明专利

JP2005194146A Production method for group iii nitride crystal 审中-公开
标题翻译：第III类氮化物晶体的生产方法
公开(公告)号：JP2005194146A
公开(公告)日：2005-07-21
申请号：JP2004003260
申请日：2004-01-08
申请人： Yusuke Mori , Sumitomo Electric Ind Ltd , 住友電気工業株式会社 , 勇介森
发明人： SASAKI TAKATOMO , MORI YUSUKE , YOSHIMURA MASASHI , KAWAMURA SHIRO , HIROTA TATSU
IPC分类号： C30B29/38 , C30B11/00 , C30B11/12 , C30B19/02 , C30B29/40 , H01L21/208
CPC分类号： C30B29/403 , C30B11/00 , C30B11/04 , C30B29/406
摘要： PROBLEM TO BE SOLVED: To provide a method for producing a group III nitride crystal at an increased growth rate.
SOLUTION: The production method for a group III nitride crystal causes the crystal to grow by bringing a melt 7 containing a group III element and an alkali metal into contact with nitrogen plasma 8a. In the method, the minimum distance X between the surface of the melt 7 and the surface of a substrate 10 is preferably 50 mm or less.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：待解决的问题：提供以增加的生长速率生产III族氮化物晶体的方法。解决方案：通过使含有III族元素和碱金属的熔体7与氮等离子体8a接触，III族氮化物晶体的制造方法使晶体生长。在该方法中，熔融体7的表面与基板10的表面之间的最小距离X优选为50mm以下。版权所有（C）2005，JPO＆NCIPI

3. 发明专利

JP2010077022A Group iii nitride crystal substrate, method for producing the same, and group iii nitride semiconductor device 审中-公开
标题翻译： III族氮化物晶体基板，其制造方法和III族氮化物半导体器件
公开(公告)号：JP2010077022A
公开(公告)日：2010-04-08
申请号：JP2009271689
申请日：2009-11-30
申请人： Yusuke Mori , Sumitomo Electric Ind Ltd , 住友電気工業株式会社 , 勇介森
发明人： SASAKI TAKATOMO , MORI YUSUKE , YOSHIMURA MASASHI , KAWAMURA SHIRO , HIROTA RYU , NAKAHATA SEIJI
IPC分类号： C30B29/38 , C30B9/00 , H01L33/32
摘要： PROBLEM TO BE SOLVED: To provide a group III nitride crystal substrate small in light absorption coefficient, to provide a method for producing the same, and to provide a group III nitride semiconductor device. SOLUTION: The method for producing the group III nitride crystal substrate includes: a process for introducing an alkali metal element-containing substance 1, a group III element-containing substance 2, and a nitrogen element-containing substance 3 into a reaction vessel 51; a process for forming a melt 5 containing at least an alkali metal element, a group III element, and a nitrogen element in the reaction vessel 51; and a process for growing a group III nitride crystal 6 from the melt 5. In the process for growing the group III nitride crystal 6 from the melt 5, the growth temperature of the group III nitride crystal is set to be ≥880°C. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：为了提供具有小的光吸收系数的III族氮化物晶体基板，以提供其制造方法，并提供III族氮化物半导体器件。解决方案：III族氮化物晶体衬底的制造方法包括：将含有碱金属元素的物质1，含III族元素的物质2和含氮元素的物质3引入反应中的方法船51 在反应容器51中形成至少含有碱金属元素，III族元素和氮元素的熔体5的工序; 以及从熔体5生长III族氮化物晶体6的工序。在从熔融体5生长III族氮化物晶体6的工序中，将III族氮化物晶体的生长温度设定为≥880℃。版权所有（C）2010，JPO＆INPIT

4. 发明专利

JP2005281067A Group iii nitride crystal substrate, producing method therefor and group iii nitride semiconductor device 审中-公开
标题翻译： III类氮化物晶体基板，其制造方法和III族氮化物半导体器件
公开(公告)号：JP2005281067A
公开(公告)日：2005-10-13
申请号：JP2004098057
申请日：2004-03-30
申请人： Yusuke Mori , Sumitomo Electric Ind Ltd , 住友電気工業株式会社 , 勇介森
发明人： SASAKI TAKATOMO , MORI YUSUKE , YOSHIMURA MASASHI , KAWAMURA SHIRO , NAKAHATA SEIJI , HIROTA TATSU
IPC分类号： C30B29/38 , C30B19/12 , H01L21/208 , H01L33/22 , H01L33/32 , H01L33/00
摘要： PROBLEM TO BE SOLVED: To provide a group III nitride crystal substrate having a low dislocation density, a producing method therefor and a semiconductor device having a large luminous intensity. SOLUTION: The method for producing the group III nitride crystal substrate involves a step to grow a group III nitride crystal 2 by a liquid phase method on the recessed and projected surface of a ground substrate 1 having at least a group III nitride crystal layer 1a on which the recessed and projected surface is formed. The surface roughness R P-V at the recessed and projected surface is favorably 0.01-50 μm. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供具有低位错密度的III族氮化物晶体基板及其制造方法和具有大的发光强度的半导体器件。解决方案：用于制造III族氮化物晶体基板的方法包括通过液相法在具有至少III族氮化物晶体的接地基板1的凹入和投影表面上生长III族氮化物晶体2的步骤其上形成有凹入和投影表面的层1a。凹入投影面的表面粗糙度R SB> P-V 优选为0.01-50μm。版权所有（C）2006，JPO＆NCIPI

5. 发明专利

JP2005194147A Production method for group iii nitride crystal 审中-公开
标题翻译：第III类氮化物晶体的生产方法
公开(公告)号：JP2005194147A
公开(公告)日：2005-07-21
申请号：JP2004003293
申请日：2004-01-08
申请人： Yusuke Mori , Sumitomo Electric Ind Ltd , 住友電気工業株式会社 , 勇介森
发明人： SASAKI TAKATOMO , MORI YUSUKE , YOSHIMURA MASASHI , KAWAMURA SHIRO , HIROTA TATSU
IPC分类号： C01B21/06 , C23C16/34 , C30B23/00 , C30B29/38
摘要： PROBLEM TO BE SOLVED: To provide a method for producing a group III nitride crystal with a large area and a low dislocation at an increased growth rate.
SOLUTION: The production method causes a group III nitride crystal to grow on a substrate 2 by supplying the vapor 4a of a group III element and the vapor 5a of an alkali metal into a nitrogen-containing atmosphere wherein the substrate 2 is placed. Here a first vessel 3a and a second vessel 3b are installed in the above atmosphere; the vapor 4a of the group III element is generated from a melt 4 of the group III element housed in the first vessel 3a; and the vapor 5a of the alkali metal is generated from a melt 5 of the alkali metal housed in the second vessel 3b.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：待解决的问题：提供一种以增加的生长速率生产具有大面积和低位错的III族氮化物晶体的方法。解决方案：制备方法通过将III族元素的蒸汽4a和碱金属的蒸气5a供应到其中放置基板2的含氮气氛中，使III族氮化物晶体在基板2上生长。这里，第一容器3a和第二容器3b安装在上述气氛中; III族元素的蒸汽4a由容纳在第一容器3a中的III族元素的熔体4产生; 并且碱金属的蒸气5a由容纳在第二容器3b中的碱金属的熔融物5产生。版权所有（C）2005，JPO＆NCIPI

6. 发明专利

JP2005298269A Group iii nitride crystal substrate and its manufacturing method, and group iii nitride semiconductor device 审中-公开
标题翻译：第III类氮化物晶体基板及其制造方法和III类氮化物半导体器件
公开(公告)号：JP2005298269A
公开(公告)日：2005-10-27
申请号：JP2004116879
申请日：2004-04-12
申请人： Yusuke Mori , Sumitomo Electric Ind Ltd , 住友電気工業株式会社 , 勇介森
发明人： SASAKI TAKATOMO , MORI YUSUKE , YOSHIMURA MASASHI , KAWAMURA SHIRO , HIROTA TATSU , NAKAHATA SEIJI
IPC分类号： C30B29/38 , C30B9/00 , C30B9/08 , C30B9/10 , C30B11/00 , C30B11/06 , C30B29/40 , H01L21/208
CPC分类号： C30B9/08 , C30B9/00 , C30B11/00 , C30B11/06 , C30B29/403
摘要： PROBLEM TO BE SOLVED: To provide a group III nitride crystal substrate small in light absorption coefficient and its manufacturing method, and a group III nitride semiconductor device.
SOLUTION: The method of manufacturing the group III nitride crystal substrate including a process for introducing a substance 1 containing an alkali metal element, a substance 2 containing a group III element, and a substance 3 containing a nitrogen element, in a reaction vessel 51; and a process for forming a melt 5 containing at least an alkali metal element, a group III element, and a nitrogen element in the reaction vessel 51; and a process for growing a group III nitride crystal 6 from the melt 5; is characterised in that, at least in the process for introducing the substance 1 containing an alkali metal element into the reaction vessel 51, the substance 1 containing the alkali metal element is treated in a drying container 100 in which the water concentration is controlled to be 1.0 ppm or lower.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供光吸收系数小的III族氮化物晶体基板及其制造方法以及III族氮化物半导体器件。解决方案：制造III族氮化物晶体基板的方法包括在反应中引入含有碱金属元素的物质1，含有III族元素的物质2和含有氮元素的物质3的方法船51 以及在反应容器51中形成至少含有碱金属元素，III族元素和氮元素的熔融物5的工序; 以及从熔体5生长III族氮化物晶体6的方法; 其特征在于，至少在将含有碱金属元素的物质1引入反应容器51的过程中，将含有碱金属元素的物质1在水浓度控制为的干燥容器100中进行处理 1.0 ppm以下。版权所有（C）2006，JPO＆NCIPI

7. 发明专利

JP2013001590A Conductive oxide, method of manufacturing the same and oxide semiconductor film 审中-公开
标题翻译：导电氧化物，其制造方法和氧化物半导体膜
公开(公告)号：JP2013001590A
公开(公告)日：2013-01-07
申请号：JP2011132845
申请日：2011-06-15
申请人： Sumitomo Electric Ind Ltd , 住友電気工業株式会社
发明人： MIYANAGA YOSHINORI , YOSHIMURA MASASHI , SOGABE KOICHI , OKADA HIROSHI , NAGASAWA MOTOKI
IPC分类号： C04B35/00 , C23C14/08 , C23C14/34 , H01L21/336 , H01L21/363 , H01L29/786
摘要： PROBLEM TO BE SOLVED: To provide a conductive oxide desirable as target for sputtering and its manufacturing method.SOLUTION: The conductive oxide includes crystalline InOand crystalline GaZnO. For the conductive oxide, with the atomic concentration ratio of Zn as 1, the atomic concentration ratio of In is 0.4-1.8, and the atomic concentration ratio of Ga is 0.4-1.8. The conductive oxide is used as a target for sputtering of In-Ga-Zn-O oxides.
摘要翻译：要解决的问题：提供希望作为溅射靶的导电氧化物及其制造方法。
解决方案：导电氧化物包括结晶In 2 和结晶Ga 2 ZnO 4 。对于导电氧化物，原子浓度比为Zn为1，In的原子浓度比为0.4〜1.8，Ga的原子浓度比为0.4〜1.8。导电氧化物用作溅射In-Ga-Zn-O氧化物的靶。版权所有（C）2013，JPO＆INPIT

8. 发明专利

JP2012121788A METHOD FOR MANUFACTURING GaN-BASED FILM 有权
标题翻译：制造GaN基膜的方法
公开(公告)号：JP2012121788A
公开(公告)日：2012-06-28
申请号：JP2011230682
申请日：2011-10-20
申请人： Sumitomo Electric Ind Ltd , 住友電気工業株式会社
发明人： SATO KAZUNARI , SEKI YUKI , UEMATSU KOJI , YAMAMOTO YOSHIYUKI , MATSUBARA HIDEKI , FUJIWARA SHINSUKE , YOSHIMURA MASASHI
IPC分类号： C30B29/38
CPC分类号： H01L33/007 , H01L21/76256 , H01L33/0079
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing a GaN-based film which can produce the GaN-based film having a large area of a main surface and small warpage.SOLUTION: The method for producing the GaN-based film includes a step of preparing a composite substrate 10 which includes a support substrate 11 in which the thermal expansion coefficient in a main surface 11m is >0.8 times and
摘要翻译：解决的问题：提供一种可以制造具有大面积的主表面和较小翘曲的GaN基膜的GaN基膜的制造方法。解决方案：制备GaN基膜的方法包括制备复合衬底10的步骤，复合衬底10包括支撑衬底11，其中主表面11m中的热膨胀系数> 0.8倍且<1.2倍热 GaN晶体的a轴方向的膨胀系数和布置在支撑基板11的主表面11m侧的单晶膜13，其中单晶膜13与垂直于主体的轴线具有三重对称性单晶膜13的表面13m以及在复合基板10中的单晶膜13的主面13m上形成GaN基膜20的工序。（C）2012，JPO＆INPIT

9. 发明专利

JP2010181732A Optical low pass filter, and image pickup apparatus and reading apparatus using the same 审中-公开
标题翻译：光学低通滤光片，图像拾取装置及其读取装置
公开(公告)号：JP2010181732A
公开(公告)日：2010-08-19
申请号：JP2009026424
申请日：2009-02-06
申请人： Sumitomo Electric Ind Ltd , 住友電気工業株式会社
发明人： YOSHIMURA MASASHI , NAKAYAMA SHIGERU , FUKUMA MASAKI
IPC分类号： G02B27/28 , G02B5/22 , G02B5/26 , G02B5/30 , H04N5/225
摘要： PROBLEM TO BE SOLVED: To provide a lightweight and inexpensive optical low pass filter for an image pickup apparatus and a next-generation DVD (Digital Versatile Disk), wherein the low pass filter has more excellent optical properties than those of the conventional optical low pass filter. SOLUTION: The optical low pass filter comprises: a substrate made of spinel; and a near-infrared absorption layer formed on the surface of the substrate. Alternatively, the optical low pass filter comprises: a substrate made of spinel; and a near-infrared reflective layer formed on the surface of the substrate. Alternatively, the optical low pass filter comprises: a substrate made of spinel; and a birefractive application layer formed on the surface of the substrate. At least one layer selected from the near-infrared absorption layer, the near-infrared reflection layer and the birefractive application layer is formed using cholesteric liquid crystals shielding light with the wavelength of 600 to 1,200 nm. The image pickup apparatus unit and reading apparatus are provided with either one of the optical low pass filters. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：为了提供一种用于图像拾取装置和下一代DVD（数字通用盘）的轻质且廉价的光学低通滤波器，其中低通滤波器具有比常规光学特性更好的光学性能光学低通滤波器。解决方案：光学低通滤波器包括：由尖晶石制成的衬底; 以及形成在基板的表面上的近红外线吸收层。或者，光学低通滤波器包括：由尖晶石制成的衬底; 以及形成在基板的表面上的近红外反射层。或者，光学低通滤波器包括：由尖晶石制成的衬底; 以及形成在所述基板的表面上的双折射施加层。使用屏蔽600nm至1200nm波长的光的胆甾醇型液晶，形成从近红外线吸收层，近红外线反射层和双折射应用层中选择的至少一层。图像拾取装置单元和读取装置设置有光学低通滤波器中的任一个。版权所有（C）2010，JPO＆INPIT

10. 发明专利

JP2010164819A Transparent ceramics substrate 审中-公开
标题翻译：透明陶瓷基材
公开(公告)号：JP2010164819A
公开(公告)日：2010-07-29
申请号：JP2009007694
申请日：2009-01-16
申请人： Sumitomo Electric Ind Ltd , 住友電気工業株式会社
发明人： YOSHIMURA MASASHI , FUKUMA MASAKI , NAKAYAMA SHIGERU
IPC分类号： G02B1/02 , G02F1/13363
摘要： PROBLEM TO BE SOLVED: To provide a transparent ceramics substrate that can form, for the various display device using an optical engine and liquid crystal, a superior video image, wherein definition and contrast ratio of the video image does not degrade due to polarization caused by thermal strain. SOLUTION: The transparent ceramics substrate includes: a transparent ceramics member layer consisting of a transparent ceramics having cubic system; and a resin layer consisting of an adhesive resin and having an optical compensation function for the transparent ceramics member layer. The transparent ceramics member layer and resin layer each has temperature dependency, wherein refractive indice thereof are opposite to each other. The transparent ceramics are spinel, YAG, or MgO. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：为了提供一种透明陶瓷基板，其可以对于使用光学引擎和液晶的各种显示装置形成优异的视频图像，其中视频图像的定义和对比度不会因为热应变引起的极化。透明陶瓷基板包括：由具有立方体系的透明陶瓷构成的透明陶瓷部件层; 以及由粘合树脂构成并具有透明陶瓷构件层的光学补偿功能的树脂层。透明陶瓷构件层和树脂层各自具有温度依赖性，其中折射率相互相反。透明陶瓷是尖晶石，YAG或MgO。版权所有（C）2010，JPO＆INPIT

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