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1. 发明专利

JP2013165115A Conductive oxide and method for producing the same 有权
标题翻译：导电氧化物及其制造方法
公开(公告)号：JP2013165115A
公开(公告)日：2013-08-22
申请号：JP2012026323
申请日：2012-02-09
申请人： Sumitomo Electric Ind Ltd , 住友電気工業株式会社
发明人： MIYANAGA YOSHINORI , AWATA HIDEAKI , SOGABE KOICHI , OKADA HIROSHI
IPC分类号： H01L21/363 , C01G9/00 , C01G15/00 , C23C14/08 , H01L29/786
摘要： PROBLEM TO BE SOLVED: To provide a conductive oxide less in the amount of rare metal used and suitable for a sputtering target, and a method for producing the conductive oxide.SOLUTION: A conductive oxide of the present invention includes a crystalline substance: InAlZnO(where, 0
摘要翻译：要解决的问题：提供少量使用并适用于溅射靶的导电氧化物以及导电氧化物的制造方法。本发明的导电氧化物包括结晶物质：InAlZnO（其中，满足0

2. 发明专利

JP2013001592A Conductive oxide and production method thereof, and oxide semiconductor film 有权
标题翻译：导电氧化物及其制备方法及氧化物半导体膜
公开(公告)号：JP2013001592A
公开(公告)日：2013-01-07
申请号：JP2011132936
申请日：2011-06-15
申请人： Sumitomo Electric Ind Ltd , 住友電気工業株式会社
发明人： MIYANAGA YOSHINORI , AWATA HIDEAKI , YOSHIMURA MASASHI , SOGABE KOICHI , OKADA HIROSHI
IPC分类号： C01G15/00 , H01L21/336 , H01L21/363 , H01L29/786
摘要： PROBLEM TO BE SOLVED: To provide a conductive oxide which can be used desirably as a sputtering target, and its production method.SOLUTION: The conductive oxide includes crystalline InGaZnO(0
摘要翻译：要解决的问题：提供可以期望地用作溅射靶的导电氧化物及其制造方法。解决方案：导电氧化物包括晶体InGa Zn （1-q） =“POST”>（4-p）（0 ZnO 4 。版权所有（C）2013，JPO＆INPIT

3. 发明专利

JP2011058012A Semi-conductor oxide 有权
标题翻译：半导体氧化物
公开(公告)号：JP2011058012A
公开(公告)日：2011-03-24
申请号：JP2009205401
申请日：2009-09-07
申请人： Sumitomo Electric Ind Ltd , 住友電気工業株式会社
发明人： MIYANAGA YOSHINORI , YOSHIMURA MASASHI , OKADA HIROSHI , SOGABE KOICHI
IPC分类号： C23C14/08 , H01L21/203 , H01L21/28 , H01L29/786
摘要： PROBLEM TO BE SOLVED: To provide a semi-conductor oxide capable of suppressing occurrence of nodule, and enhancing its characteristic. SOLUTION: The conductive oxide is a non-crystalline conductive oxide, and contains indium, gallium, zinc, oxygen and nitrogen while the concentration of nitrogen is ≥1×10 20 (atom/cc) and ≤1×10 22 atom/cc. The ratio of the concentration of In to the total concentration of the concentration of In, the concentration of Ga and the concentration of Zn is ≥0.30 and ≤0.66. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：解决的问题：提供能够抑制结节发生的半导体氧化物，提高其特性。
解决方案：导电氧化物是非结晶的导电氧化物，并且含有铟，镓，锌，氧和氮，而氮的浓度为≥1×10 20（原子/ cc）和≤1×10 22 原子/ cc。 In浓度与In浓度的总浓度之比，Ga的浓度和Zn的浓度分别为≥0.30和≤0.66。版权所有（C）2011，JPO＆INPIT

4. 发明专利

JP2013018687A Nitride film production method 审中-公开
标题翻译：硝酸盐膜生产方法
公开(公告)号：JP2013018687A
公开(公告)日：2013-01-31
申请号：JP2011155148
申请日：2011-07-13
申请人： Sumitomo Electric Ind Ltd , 住友電気工業株式会社
发明人： MAEDA TORU , NAGASAWA MOTOKI , SOGABE KOICHI , KATO TAKESHI
IPC分类号： C01B21/06 , C23C24/08 , H01F41/16
摘要： PROBLEM TO BE SOLVED: To provide a nitride film production method and apparatus each of which can produce a nitride film such as an α"FeNfilm with good productivity and to provide a nitride film.SOLUTION: In the nitride film production apparatus 1, a raw material powder is aerosolized by an aerosol generation part 10, the aerosol is injected at a high speed into a chamber 100 and is allowed to collide against a substrate B to fragmentize the raw material, and the fragments are deposited on the substrate B to form a film. The production apparatus 1 is further equipped with a plasma generation part 20 that irradiates the aerosol with nitrogen plasma and a superconducting magnet 30 that applies a magnetic field to the formed nitride or the like. The nitrogen plasma makes it possible to efficiently form a nitride such as α"FeNat ordinary temperature, and the applied magnetic field makes it possible both to regulate the penetration direction of N atoms to thereby efficiently form e.g., α"FeNand to orientate the nitride constituting the fragments to thereby deposit a high-orientation nitride film. Accordingly, the production apparatus 1 can produce a nitride film such as an α"FeNfilm with good productivity.
摘要翻译：要解决的问题：提供一种氮化物膜的制造方法和装置，其可以制造氮化物膜，例如α“Fe 2 膜，并提供氮化物膜。解决方案：在氮化膜生产设备1中，原料粉末由气溶胶发生部分10雾化，将气溶胶喷射在高速进入室100并允许与基板B碰撞以破碎原料，并将碎片沉积在基板B上以形成膜，制造装置1还配备有等离子体产生部20，其等于用氮等离子体照射气溶胶，向形成的氮化物等施加磁场的超导磁体30，能够有效地形成氮化物，例如α“Fe 16” / SB> N 2 ，施加的磁场使其成为可能以调节N原子的穿透方向，从而有效地形成例如α“Fe 2 并且使氮化物构成片，从而沉积高取向氮化物膜。因此，制造装置1能够以良好的生产率制造诸如α“Fe 2 膜的氮化物膜。 P>版权所有（C）2013，JPO＆INPIT

5. 发明专利

JP2013001590A Conductive oxide, method of manufacturing the same and oxide semiconductor film 审中-公开
标题翻译：导电氧化物，其制造方法和氧化物半导体膜
公开(公告)号：JP2013001590A
公开(公告)日：2013-01-07
申请号：JP2011132845
申请日：2011-06-15
申请人： Sumitomo Electric Ind Ltd , 住友電気工業株式会社
发明人： MIYANAGA YOSHINORI , YOSHIMURA MASASHI , SOGABE KOICHI , OKADA HIROSHI , NAGASAWA MOTOKI
IPC分类号： C04B35/00 , C23C14/08 , C23C14/34 , H01L21/336 , H01L21/363 , H01L29/786
摘要： PROBLEM TO BE SOLVED: To provide a conductive oxide desirable as target for sputtering and its manufacturing method.SOLUTION: The conductive oxide includes crystalline InOand crystalline GaZnO. For the conductive oxide, with the atomic concentration ratio of Zn as 1, the atomic concentration ratio of In is 0.4-1.8, and the atomic concentration ratio of Ga is 0.4-1.8. The conductive oxide is used as a target for sputtering of In-Ga-Zn-O oxides.
摘要翻译：要解决的问题：提供希望作为溅射靶的导电氧化物及其制造方法。
解决方案：导电氧化物包括结晶In 2 和结晶Ga 2 ZnO 4 。对于导电氧化物，原子浓度比为Zn为1，In的原子浓度比为0.4〜1.8，Ga的原子浓度比为0.4〜1.8。导电氧化物用作溅射In-Ga-Zn-O氧化物的靶。版权所有（C）2013，JPO＆INPIT

6. 发明专利

JP2013163607A Conductive oxide and method for producing the same 有权
标题翻译：导电氧化物及其制造方法
公开(公告)号：JP2013163607A
公开(公告)日：2013-08-22
申请号：JP2012026322
申请日：2012-02-09
申请人： Sumitomo Electric Ind Ltd , 住友電気工業株式会社
发明人： MIYANAGA YOSHINORI , AWATA HIDEAKI , SOGABE KOICHI , OKADA HIROSHI
IPC分类号： C01G15/00 , C04B35/00 , C04B35/443 , C23C14/08 , C23C14/34 , H01B1/08
摘要： PROBLEM TO BE SOLVED: To provide a conductive oxide using a small amount of a rare metal and suitable for a sputtering target, and to provide a method for producing the conductive oxide.SOLUTION: A conductive oxide comprises crystalline material InAlMgO(0
摘要翻译：要解决的问题：提供使用少量稀有金属并适合于溅射靶的导电氧化物，并提供导电氧化物的制造方法。导电氧化物包括结晶材料InAlMgO（0

7. 发明专利

JP2011199108A Conductive oxide and method for manufacturing the same 有权
标题翻译：导电氧化物及其制造方法
公开(公告)号：JP2011199108A
公开(公告)日：2011-10-06
申请号：JP2010065884
申请日：2010-03-23
申请人： Sumitomo Electric Ind Ltd , 住友電気工業株式会社
发明人： MIYANAGA YOSHINORI , SHIBATA KENICHIRO , NAGASAWA MOTOKI , YOSHIMURA MASASHI , OKADA HIROSHI , SOGABE KOICHI
IPC分类号： H01L21/203
摘要： PROBLEM TO BE SOLVED: To increase the thickness of a target and extend its life by improving the thermal conductivity of the conductive oxide of the target, and to improve an etching rate of an oxide semiconductor film deposited by sputtering by the use of the target.SOLUTION: The conductive oxide contains In, Zn and Ga, and crystalline InZnO.
摘要翻译：要解决的问题：通过提高靶的导电氧化物的热导率，提高目标的厚度并延长其使用寿命，并且通过使用目标来提高通过溅射沉积的氧化物半导体膜的蚀刻速率。解决方案：导电氧化物含有In，Zn和Ga以及晶体InZnO。

8. 发明专利

JP2011058011A Conductive oxide 有权
标题翻译：导电氧化物
公开(公告)号：JP2011058011A
公开(公告)日：2011-03-24
申请号：JP2009205396
申请日：2009-09-07
申请人： Sumitomo Electric Ind Ltd , 住友電気工業株式会社
发明人： MIYANAGA YOSHINORI , YOSHIMURA MASASHI , SOGABE KOICHI , OKADA HIROSHI
IPC分类号： C23C14/34 , C04B35/00 , H01L29/786
摘要： PROBLEM TO BE SOLVED: To provide a conductive oxide capable of suppressing occurrence of nodule. SOLUTION: The conductive oxide is a crystalline conductive oxide, and contains indium, gallium, zinc, oxygen and nitrogen while the concentration of nitrogen is ≥7×10 19 (atom/cc). The ratio of the concentration of indium to the total concentration of the concentration of indium, the concentration of gallium and the concentration of zinc is preferably ≥0.3 and ≤0.6. The conductive oxide is preferably used for a target of the sputtering method. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供能够抑制结节发生的导电氧化物。
解决方案：导电氧化物是结晶导电氧化物，并且含有铟，镓，锌，氧和氮，而氮的浓度为≥7×10 19（原子/ cc）。铟的浓度与铟的浓度，镓的浓度和锌的浓度的比率优选≥0.3且≤0.6。导电氧化物优选用于溅射方法的靶。版权所有（C）2011，JPO＆INPIT

9. 发明专利

JP2014143381A Composite substrate, method of manufacturing semiconductor wafer using composite substrate, and support substrate for composite substrate 有权
标题翻译：复合基板，使用复合基板制造半导体波形的方法和用于复合基板的支撑基板
公开(公告)号：JP2014143381A
公开(公告)日：2014-08-07
申请号：JP2013041828
申请日：2013-03-04
申请人： Sumitomo Electric Ind Ltd , 住友電気工業株式会社
发明人： SATO KAZUNARI , SEKI HIROKI , YAMAMOTO YOSHIYUKI , MATSUBARA HIDEKI , SOGABE KOICHI , HASEGAWA MIKITO , TSUJI YUTAKA , FUJII AKITO
IPC分类号： H01L21/02 , H01L21/20 , H01L21/205
CPC分类号： H01L21/0242 , C30B29/34 , H01L21/0254
摘要： PROBLEM TO BE SOLVED: To provide a composite substrate suitable for efficiently manufacturing a semiconductor wafer at a low cost, a method of manufacturing a semiconductor wafer using the composite substrate, and a support substrate for the composite substrate.SOLUTION: A composite substrate 1 includes: a support substrate 11 which contains a crystal phase formed of anorthite having a chemical composition of MAlSiOcontaining a metal element M; and a main film 13 disposed on the main surface 11m side of the support substrate 11. The method of manufacturing a semiconductor wafer 3 includes the steps of: preparing the composite substrate 1; growing at least one semiconductor layer 20 on the main film 13 of the composite substrate 1 to obtain a composite substrate with a semiconductor layer 2; and removing the support substrate 11 from the composite substrate with the semiconductor layer 2 to obtain the semiconductor wafer 3 including the semiconductor layer 20.
摘要翻译：要解决的问题：提供一种适合于以低成本有效地制造半导体晶片的复合衬底，使用复合衬底制造半导体晶片的方法以及用于复合衬底的支撑衬底。解决方案：复合衬底1包括：支撑基板11，其包含由具有包含金属元素M的MAIL 2的化学组成的钙长石形成的结晶相; 以及设置在支撑基板11的主表面11m侧的主膜13.制造半导体晶片3的方法包括以下步骤：制备复合基板1; 在复合基板1的主膜13上生长至少一个半导体层20，以获得具有半导体层2的复合衬底; 用半导体层2从复合基板上取下支撑基板11，得到包含半导体层20的半导体晶片3。

10. 发明专利

JP2014138105A Conductive oxide and manufacturing method of the same 审中-公开
标题翻译：导电氧化物及其制造方法
公开(公告)号：JP2014138105A
公开(公告)日：2014-07-28
申请号：JP2013006348
申请日：2013-01-17
申请人： Sumitomo Electric Ind Ltd , 住友電気工業株式会社
发明人： AWATA HIDEAKI , MIYANAGA YOSHINORI , SOGABE KOICHI , KURISU KENICHI
IPC分类号： H01L21/28 , C01G15/00 , C23C14/34 , H01L21/285 , H01L21/336 , H01L21/363 , H01L29/786
摘要： PROBLEM TO BE SOLVED: To provide a conductive oxide and a manufacturing method of the same, which can form an oxide semiconductor film having a lesser content of rare metal, in which decrease in carrier mobility is inhibited.SOLUTION: A conductive oxide is composed of a complex oxide of indium, aluminum and zinc. In the conductive oxide, an atomic concentration ratio of aluminum to zinc is not less than 4 and not more than 5. Further in the conductive oxide, an atomic concentration ratio of indium to zinc is not less than 1.8 and not more than 2.2.
摘要翻译：要解决的问题：为了提供能够形成少量稀有金属的氧化物半导体膜的导电氧化物及其制造方法，其中载流子迁移率的降低被抑制。解决方案：导电氧化物由铟，铝和锌的复合氧化物。在导电性氧化物中，铝与锌的原子浓度比为4以上且5以下。此外，在导电性氧化物中，铟与锌的原子浓度比为1.8以上且2.2以下。

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