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1. 发明专利

JP2003249125A TRANSPARENT CONDUCTIVE FILM WITH LOW RESISTANCE AND METHOD OF MANUFACTURING THE SAME 审中-公开
公开(公告)号：JP2003249125A
公开(公告)日：2003-09-05
申请号：JP2002050300
申请日：2002-02-26
申请人： ULVAC CORP
发明人： KAWAMURA HIROAKI , TAKEI HIDEO , ISHIBASHI AKIRA
IPC分类号： H01L51/50 , C04B35/00 , C04B35/495 , C04B35/64 , H01B5/14 , H01B13/00 , H05B33/14 , H05B33/28
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing a transparent conductive thin film that is sintered at low temperatures and has low electrical resistances after sintering, and to provide the transparent conductive film with low resistances. SOLUTION: A dispersion liquid of fine particles of metal oxides such as ITO or the like is applied on a substrate to be treated and sintered at 150-200°C in the atmosphere to form a porous transparent conductive film, and then heated at 100-250°C in a mixture atmosphere of a gas including oxygen or ozone and an indium halide gas or an organic indium gas. Holes in the porous conductive film are filled with indium oxide generated by the reaction of oxygen and organic indium. COPYRIGHT: (C)2003,JPO

2. 发明专利

JP2003168571A ORGANIC EL ELEMENT 审中-公开
公开(公告)号：JP2003168571A
公开(公告)日：2003-06-13
申请号：JP2001364851
申请日：2001-11-29
申请人： ULVAC CORP
发明人： UKISHIMA YOSHIYUKI , KIYOTA JUNYA , ISHIBASHI AKIRA
IPC分类号： H05B33/26 , H01L51/50 , H05B33/14
摘要： PROBLEM TO BE SOLVED: To obtain a transparent conductive film for a polymer EL having excellent heat resistant property and chemical resistance which is formed so as not to lower the flatness of a surface, specific resistance, and processibility by forming a tin oxide film on a laminated transparent conductive film for an organic EL element (ITO film/metal film/ITO film, or metal film/ITO film) formed at room temperature, or on the ITO film formed without heating, as a surface layer. SOLUTION: The tin oxide film is formed on the laminated transparent conductive film (ITO film/metal film/ITO film, or metal film/ITO film) formed at room temperature, or formed on the ITO film formed without heating, as a surface layer. COPYRIGHT: (C)2003,JPO

3. 发明专利

JPH11352310A NICKEL-BASE BM FILM AND PRODUCTION OF BM FILM 失效
公开(公告)号：JPH11352310A
公开(公告)日：1999-12-24
申请号：JP15509198
申请日：1998-06-04
申请人： ULVAC CORP
发明人： ISHIBASHI AKIRA , KIYOTA JUNYA , SUGIURA ISAO , ARAI MAKOTO , NAKAMURA HAJIME , HORI TAKAHIDE , HAYASHI SHIMEI , OTA YOSHIFUMI
IPC分类号： G02B5/00 , C23C14/06 , G02B5/20 , G02F1/1335
摘要： PROBLEM TO BE SOLVED: To provide a BM(black matrix) film which is little in particle generation with low environmental pollution. SOLUTION: The BM films 51, 71 of a laminated structure are formed of translucent layers 54, 74 consisting of nickel oxide thin films or nickel nitride thin films and metallic reflection layers 55, 75 consisting of nickel thin films by using targets which consist essentially of nickel, are added with other metals and are made nonmagnetic. The amt. of the gaseous oxygen to be introduced in a sputtering atmosphere and the amt. of the gaseous nitrogen to be introduced is adequately selected, by which the black BM films of low reflection may be obtd. The stresses are smaller than in the chromium-base BM films and, therefore, there is no particle generation and an environmental pollution problem does not arise even at the time of etching.

4. 发明专利

JPH0622205B2 失效
公开(公告)号：JPH0622205B2
公开(公告)日：1994-03-23
申请号：JP4419186
申请日：1986-03-03
申请人： ULVAC CORP
发明人： IZUMI HIROHIKO , ISHIBASHI AKIRA , HAYASHI YASUAKI
IPC分类号： H01L31/04 , H01L21/205

5. 发明专利

JPH0622204B2 失效
公开(公告)号：JPH0622204B2
公开(公告)日：1994-03-23
申请号：JP3819786
申请日：1986-02-25
申请人： ULVAC CORP
发明人： ISHIBASHI AKIRA , IZUMI HIROHIKO , HAYASHI YASUAKI
IPC分类号： H01L21/205 , H01L21/31

6. 发明专利

JPH05306457A 失效
公开(公告)号：JPH05306457A
公开(公告)日：1993-11-19
申请号：JP11288092
申请日：1992-05-01
申请人： ULVAC CORP
发明人： ISHIBASHI AKIRA , NAKAMURA HAJIME , KIYOTA JUNYA , NAKAMURA KYUZO
IPC分类号： C23C14/08 , C23C14/34 , H01B13/00
摘要： PURPOSE:To form a transparent conductive film excellent in conductivity and impermeability at the time of sputtering an In-Sn-O oxide target to form a transparent conductive film of In-Sn-O on a substrate by using a gaseous mixture contg. H2 as the sputtering gas. CONSTITUTION:An In-Sn-O oxide target is sputtered to form a transparent conductive film of In-Sn-O on a substrate kept at about 200 deg.C. At this time, gaseous Ar (at least 5X10 Torr) is used as the sputtering gas, and H2 is introduced into the gas at about 1.0X10 Torr. Consequently, excess oxygen is not introduced into the atmosphere in sputtering, the composition of the transparent conductive film on the substrate is optimized, and a low-resistance transparent conductive film is obtained.

7. 发明专利

JPS6297329A DRY ETCHING DEVICE 失效
公开(公告)号：JPS6297329A
公开(公告)日：1987-05-06
申请号：JP23645585
申请日：1985-10-24
申请人： ULVAC CORP
发明人： ISHIBASHI AKIRA , NAKAMURA KYUZO
IPC分类号： H01L21/302 , H01L21/3065
摘要： PURPOSE:To make it possible to supply sufficient active species to a substrate uniformly by arranging a high molecular material including fluorine or chlorine on either of two opposite cathodes and attaching a substrate to be etched on the surface of another cathode and etching the substrate on the cathode by the active species generated by sputtering of the high molecular material. CONSTITUTION:A high-frequency field is applied to high-frequency cathodes 2 and 3 by a high-frequency source 5 by phase difference of 180 deg.. Consequently, reciprocation of electrons is produced between the high-frequency cathodes 2 and 3 and a high-density plasma is generated. For preventing the contamination due to sputtering of a cathode material, the high-frequency cathodes 2 and 3 are covered with a non-magnetic member 6 composed of Al, Al2O3 or SiO2 etc. A high molecular material 7 including halogen is arranged on the high-frequency cathode 2 and a substrate 8 to be etched is attached to the high-frequency cathode 3. The high molecular material 7 on the high-frequency cathode 2 is sputtered by a high-density plasma and active species are produced by decomposition in the plasma. These active species etch the substrate 8 on the opposed high-frequency cathode 3.

8. 发明专利

JPS6223987A DRY ETCHING DEVICE 失效
公开(公告)号：JPS6223987A
公开(公告)日：1987-01-31
申请号：JP16115485
申请日：1985-07-23
申请人： ULVAC CORP
发明人： ISHIBASHI AKIRA , TAKAKUWA KAZUO , NAKAMURA KYUZO
IPC分类号： H01L21/302 , C23F4/00 , H01L21/3065
摘要： PURPOSE:To obtain a device capable of high-velocity etching due to a high-density plasma by providing a means impressing respectively high-frequency electric power on the opposed two cathodes incorporated in the inside of a vacuum vessel and also providing a means generating the specified magnetic fields between the opposed electrodes. CONSTITUTION:The opposed cathodes 2, 3 are provided to the inside of a grounded vacuum vessel 1 and the permanent magnets 4, 5 are provided to the rear sides of each cathode. The assembly of these electrodes and magnets is covered with nonmagnetic materials 6, 7 such as Al in order to prevent the pollution of the wafers (the materials to be etched) 10, 11 due to the sputtering of the surface material. The high-frequency electric power fed from an electric power source 8 is respectively impressed on the cathodes 2, 3 in 180 deg. phase difference via a split-phase inversion circuit 9 or the like. The uniform magnetic fields vertical to each electrode are imposed between the electrodes 2, 3 with the magnets 4, 5. Electron performs cyclotron motion by means of the magnets 4, 5. Furthermore since the electrodes 2, 3 are a high-frequency electrode and respectively made to a cathode with own bias from plasma, electron is reciprocated between the electrodes while performing the above-mentioned motion and the high-density plasma is obtained as a result.

9. 发明专利

JPS61271836A DRY ETCHING APPARATUS 失效
公开(公告)号：JPS61271836A
公开(公告)日：1986-12-02
申请号：JP11311185
申请日：1985-05-28
申请人： ULVAC CORP
发明人： ISHIBASHI AKIRA , TAKAKUWA KAZUO , NAKAMURA KYUZO
IPC分类号： B01J3/02 , B01J19/08 , C23F1/00 , C23F4/00 , H01J37/32 , H01L21/302 , H01L21/3065
摘要： PURPOSE:To improve the processing efficiency of a sheet-fed etching apparatus, by providing a substrate storage chamber with an exhaust tube and an inactive gas inlet tube and controlling the pressure in the storage chamber to be equivalent to or somewhat higher than the pressure in an etching chamber by means of an automatic pressure regulator. CONSTITUTION:When a casette case 6 receiving substrates 5 is set in a storage chamber 4, the storage chamber 4 and an etching chamber 1 are evacuated through exhaust tubes 10 and 12. The etching chamber 1 is then supplied with an etching gas through inlet tubes 9 and 11. An automatic pressure regulator 15 controls valves 13 and 14 so that the pressure in the storage chamber 4 is equivalent to or somewhat higher than the pressure in the etching chamber 1, whereby a transportation aperture 8 is opened and a substrate 5 is fed onto a cathode 3 in the etching chamber 1 through the aperture 8. The transportation aperture 8 is then closed, and the substrate 5 is subjected to the plasma discharge etching in the etching chamber 1. After finishing the etching, the transportation aperture 8 is again opened so that the etched substrate 5 is exchanged with a new unetched substrate in the storage chamber 4. Gas is introduced into the chambers through the inlet tubes 9 and 11 until the unetched substrate 5 is fed into the etching chamber 1.

10. 发明专利

JP2004006441A METHOD FOR FORMING COPPER WIRING 审中-公开
公开(公告)号：JP2004006441A
公开(公告)日：2004-01-08
申请号：JP2002151399
申请日：2002-05-24
申请人： ULVAC CORP
发明人： TAKEI HIDEO , SAKIO SUSUMU , MIZUNO KENJI , IKEDA SATOSHI , KAWAMURA HIROAKI , ISHIBASHI AKIRA
IPC分类号： H01L21/28 , H01L21/3065 , H01L21/3205 , H01L21/3213 , H01L23/52
摘要： PROBLEM TO BE SOLVED: To provide a method for forming practical Cu wiring in which a volatile gas of Cu is not generated at RIE and further speed for eliminating a reactant is improved. SOLUTION: A Cu layer 3 formed on a surface of a substrate 1 is overlaid with a photo resist pattern 4 that constitutes a mask corresponding to Cu wiring to be formed. A reactive gas with HI as a principal is dissolved with plasma. Then iodine is made to react with Cu to produce a reaction product of Culx. After the soluble reaction product of Culx is eliminated by cleaning treatment, the photo resist is eliminated. COPYRIGHT: (C)2004,JPO

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