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    • 6. 发明专利
    • Method and apparatus for depositing mixed film of amorphous carbon and silicon oxide
    • 用于沉积非晶碳和氧化硅的混合膜的方法和装置
    • JP2012172201A
    • 2012-09-10
    • JP2011035580
    • 2011-02-22
    • Toyota Industries Corp株式会社豊田自動織機
    • UEDA MASAHARUHAYASHI HIDETAKAKUMAGAI KYOKONOBORISAKA MAYUI
    • C23C16/30
    • PROBLEM TO BE SOLVED: To provide a film deposition method for uniformly and quickly depositing a mixed film of amorphous carbon and silicon oxide which has both characteristics of amorphous carbon and silicon oxide.SOLUTION: Mixed gas G0 containing raw material gas is supplied between a holding electrode 1 and an electrode body 10 having an application electrode 2 which are arranged opposite to each other, and the AC voltage is applied to the application electrode 2 while generating the DC bias voltage between the electrode body 10 and the holding electrode 1 as necessary under the atmospheric state. Thus, glow discharge plasma is generated between a film-deposited body W held by the holding electrode 1 and the electrode body 10, and an amorphous carbon-silicon oxide mixed film is deposited on the film-deposited body W. Raw material gas contains hydrocarbon gas, organic silane gas and oxygen source gas. In the raw material gas, the mixture ratio of organic silane gas to oxygen source gas is 99.9-0.1 to 0.1-99.9, and the mixture ratio of hydrocarbon gas to organic silane gas+oxygen source gas is 1:99 to 99:1.
    • 要解决的问题:提供一种均匀且快速地沉积具有无定形碳和氧化硅特性两者的无定形碳和氧化硅的混合膜的成膜方法。 解决方案:在保持电极1和具有彼此相对布置的施加电极2的电极体10之间提供含有原料气体的混合气体G0,并且将AC电压施加到施加电极2,同时产生 在大气状态下必要时电极体10与保持电极1之间的直流偏置电压。 因此,在由保持电极1保持的膜沉积体W和电极体10之间产生辉光放电等离子体,并且在膜沉积体W上沉积无定形碳 - 氧化硅混合膜。原料气体含有烃 气体,有机硅烷气体和氧气气体。 在原料气体中,有机硅烷气体与氧源气体的混合比为99.9〜0.1〜0.1-99.9,烃气体与有机硅烷气体+氧气气体的混合比为1:99〜99:1。 版权所有(C)2012,JPO&INPIT