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1. 发明专利

JP2009117471A Powder for core, dust core, and their production methods 有权
标题翻译：核心粉饼，粉饼及其生产方法
公开(公告)号：JP2009117471A
公开(公告)日：2009-05-28
申请号：JP2007286314
申请日：2007-11-02
申请人： Toyota Central R&D Labs Inc , Toyota Motor Corp , トヨタ自動車株式会社 , 株式会社豊田中央研究所
发明人： TAJIMA SHIN , TANI MASAAKI , OKAMOTO DAISUKE , HOSHINA EISUKE , KISHIMOTO HIDESHI , ICHIKIZAKI DAISUKE
IPC分类号： H01F1/24 , B22F1/02 , B22F3/00 , C21D6/00 , H01F3/08 , H01F41/02
CPC分类号： H01F1/24 , B22F1/0062 , B22F2003/026 , B22F2003/248 , B22F2998/10 , C21D8/1216 , C21D8/1244 , C22C1/002 , C22C33/02 , H01F1/14 , H01F1/26 , H01F41/0246 , Y10T428/12014 , Y10T428/12181 , B22F9/082 , B22F3/02 , B22F3/24
摘要： PROBLEM TO BE SOLVED: To provide a powder for a core having high resistivity and low iron loss, while maintaining a high density and a high magnetic flux density, and to provide a dust core using the same, and production methods thereof. SOLUTION: This production method of this powder for a core includes an alkoxide coating film forming process for forming an alkoxide coating film, containing an Al-Si-O-based composite oxide on the surface of a pure iron powder, by immersing a pure iron powder in an alkoxide-containing solution produced by mixing in a water-free organic solvent, a Si alkoxide and Al alkoxide having an organic group having a polar group containing one or more types of N, P, S and O atoms and by drying the resultant mixture to remove the water-free organic solvent; and a silicone resin coating film forming process for forming a silicone resin coating film on the alkoxide coating film, by immersing the pure iron powder coated with the alkoxide coating film in a silicone resin-containing solution produced by mixing a silicone resin in an organic solvent and by drying the resultant mixture to remove the organic solvent, wherein an insulating coating film comprising the alkoxide coating film and the silicone resin coating film is formed on the surface of the pure iron powder. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：为了提供具有高电阻率和低铁损的铁芯粉末，同时保持高密度和高磁通密度，并提供使用该粉末的压粉芯及其制造方法。解决方案：该芯粉的制造方法包括在纯铁粉末的表面上形成含有Al-Si-O系复合氧化物的醇盐涂膜的醇盐涂膜成膜方法，通过在无水有机溶剂，Si醇盐和具有含有一种或多种N，P，S和O原子的极性基团的有机基团的Al醇盐中混合制备的含醇盐溶液中的纯铁粉末，以及通过干燥所得混合物以除去无水有机溶剂; 以及通过将涂覆有醇盐涂膜的纯铁粉浸渍在通过将有机硅树脂混合在有机溶剂中制备的含硅树脂溶液中的情况下，在醇盐涂膜上形成有机硅树脂涂膜的有机硅树脂涂膜形成方法并通过干燥所得混合物以除去有机溶剂，其中在纯铁粉末的表面上形成包含醇盐涂膜和有机硅树脂涂膜的绝缘涂膜。版权所有（C）2009，JPO＆INPIT

2. 发明专利

JP2008088505A Insulating film, powder for magnetic core, powder magnetic core and method for forming them or method for producing them 有权
标题翻译：绝缘膜，磁芯用粉末，粉末磁芯及其制造方法或其生产方法
公开(公告)号：JP2008088505A
公开(公告)日：2008-04-17
申请号：JP2006271103
申请日：2006-10-02
申请人： Toyota Central R&D Labs Inc , Toyota Motor Corp , トヨタ自動車株式会社 , 株式会社豊田中央研究所
发明人： TAJIMA SHIN , TANI MASAAKI , KISHIMOTO HIDESHI , HOSHINA EISUKE
IPC分类号： B22F1/02 , B22F3/00 , B22F3/24 , C21D6/00 , H01F1/26 , H01F1/33 , H01F41/02
摘要： PROBLEM TO BE SOLVED: To provide a method for forming a thin insulating film capable of uniformly forming an insulating film having excellent insulating properties/heat resistance on the surface of a metallic material, and to provide an insulating film obtained thereby. SOLUTION: The method for forming an insulating film for covering the surface of a metallic material comprises: an alkoxide-containing solution preparing stage where Si alkoxide comprising at least one organic group having a polar group comprising one or a plurality of N, P, S and O atoms and Al alkoxide are mixed into a dehydrated organic solvent, so as to prepare an alkoxide-containing solution; and an inorganic film forming stage where a metallic material is immersed into the alkoxide-containing solution and is thereafter dried to remove the dehydrated organic solvent, thus an insulating film composed of an inorganic film composed of an Al-Si-O based oxide is formed on the surface of the metallic material. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种能够均匀形成在金属材料的表面上具有优异的绝缘性/耐热性的绝缘膜的薄绝缘膜的方法，并提供由此获得的绝缘膜。用于形成用于覆盖金属材料表面的绝缘膜的方法包括：含醇盐的溶液制备阶段，其中包含至少一个具有极性基团的有机基团的Si醇盐包含一个或多个N，将P，S和O原子和Al醇盐混合到脱水的有机溶剂中，以制备含醇盐的溶液; 以及将金属材料浸渍在含醇盐溶液中的干燥后除去脱水有机溶剂的无机成膜层，形成由由Al-Si-O系氧化物构成的无机膜构成的绝缘膜在金属材料的表面上。版权所有（C）2008，JPO＆INPIT

3. 发明专利

JP2010251600A Powder for dust core and dust core, and method of manufacturing the same 有权
标题翻译：粉尘和粉尘核心的粉末及其制造方法
公开(公告)号：JP2010251600A
公开(公告)日：2010-11-04
申请号：JP2009100882
申请日：2009-04-17
申请人： Toyota Central R&D Labs Inc , Toyota Motor Corp , トヨタ自動車株式会社 , 株式会社豊田中央研究所
发明人： OKAMOTO DAISUKE , ICHIKIZAKI DAISUKE , TAJIMA SHIN , TANI MASAAKI
IPC分类号： H01F1/33 , B22F1/02 , B22F3/00 , H01F1/26 , H01F41/02
摘要： PROBLEM TO BE SOLVED: To provide a dust core with high density, high specific resistance, and high strength; and to provide powder for the dust core, and methods of producing the same. SOLUTION: The powder 10 for the dust core comprises soft magnetic metal powder 1, an alkoxide layer 2 covering the soft magnetic metal powder 1 and made of Al-Si-O-based compound oxide, and an insulating layer 4 covering the alkoxide layer 2, wherein glass powder 3 having a low melting point is dispersed in the alkoxide layer 2. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供高密度，高电阻和高强度的防尘芯; 并提供用于防尘芯的粉末及其制造方法。解决方案：用于防尘芯的粉末10包括软磁性金属粉末1，覆盖软磁性金属粉末1的由Al-Si-O系复合氧化物构成的醇盐层2和覆盖醇盐层2，其中具有低熔点的玻璃粉末3分散在醇盐层2中。版权所有（C）2011，JPO＆INPIT

4. 发明专利

JP2014239124A 光電素子审中-公开
标题翻译：光电元件
公开(公告)号：JP2014239124A
公开(公告)日：2014-12-18
申请号：JP2013120276
申请日：2013-06-06
申请人：株式会社豊田中央研究所 , Toyota Central R&D Labs Inc
发明人： TAMURA SHINICHI , TAJIMA SHIN , HASEGAWA MASAKI , IKUNO TAKASHI
IPC分类号： H01L31/06
CPC分类号： Y02E10/50
摘要：【課題】製造コストを増大させることなく、光の吸収率を向上させることができ、しかも光吸収層の最深部で生成したキャリアを取り出すことが可能な光電素子を提供すること。【解決手段】光電素子は、基板と、前記基板の表面に形成された下部電極と、前記下部電極の上に形成された、p型半導体からなる光吸収層及びn型半導体からなる第2層と、前記光吸収層又は前記第2層の表面に形成された上部電極とを備えている。また、前記光電素子は、前記光吸収層の傾き角(&thetas;)が0?
摘要翻译：要解决的问题：提供一种光电元件，其能够提高光的吸收系数而不增加制造成本，并提取在光吸收层的最深部分产生的载体。解决方案：光电元件包括：基板; 形成在所述基板的表面上的下电极; 由p型半导体构成的光吸收层和形成在下电极上的由n型半导体构成的第二层; 以及形成在光吸收层或第二层的表面上的上电极。在光吸收层的倾斜角（θ）为0°〜90°的条件下使用光电元件。术语“倾斜角（＆amp; t”））是指光吸收层的受光面的法线与光的入射方向之间形成的角度。

5. 发明专利

JP2014093370A Photoelectric element 审中-公开
标题翻译：光电元件
公开(公告)号：JP2014093370A
公开(公告)日：2014-05-19
申请号：JP2012242051
申请日：2012-11-01
申请人： Toyota Central R&D Labs Inc , 株式会社豊田中央研究所
发明人： TAJIMA SHIN
IPC分类号： H01L31/06
CPC分类号： Y02E10/50
摘要： PROBLEM TO BE SOLVED: To improve quantum efficiency in a short-wavelength region, in a photoelectric element using a CZTS-based light absorption layer.SOLUTION: A photoelectric element includes a substrate, a back electrode formed on a surface of the substrate, a light absorption layer formed on a surface of the back electrode, a buffer layer formed on a surface of the light absorption layer, a transparent electrode formed on a surface of the buffer layer, and a surface electrode formed on a surface of the transparent electrode. The light absorption layer is composed of a CZTS-based compound semiconductor. The buffer layer is composed of (Cd, Zn)S having a cubic-system crystal structure.
摘要翻译：要解决的问题：提高使用基于CZTS的光吸收层的光电元件中的短波长区域的量子效率。光电元件包括基板，形成在基板的表面上的背面电极，形成在背面电极的表面上的光吸收层，形成在光吸收层的表面上的缓冲层，形成在缓冲层的表面上的透明电极和形成在透明电极的表面上的表面电极。光吸收层由CZTS系化合物半导体构成。缓冲层由具有立方晶系晶体结构的（Cd，Zn）S构成。

6. 发明专利

JP2012124284A Photoelectric element 有权
标题翻译：光电元件
公开(公告)号：JP2012124284A
公开(公告)日：2012-06-28
申请号：JP2010272946
申请日：2010-12-07
申请人： Toyota Central R&D Labs Inc , Toyota Industries Corp , 株式会社豊田中央研究所 , 株式会社豊田自動織機
发明人： MAKI TSUYOSHI , AIDA NOBUHIRO , EGUCHI TATSUYA , SHIBATA KENJI , FUKANO TATSUO , TAJIMA SHIN , ITO TADAYOSHI , WASHIO TSUKASA
IPC分类号： H01L31/04 , H01L31/0248
CPC分类号： Y02E10/50
摘要： PROBLEM TO BE SOLVED: To obtain higher power generation efficiency without requiring a material containing Cd, in a photoelectric element in which a sulfide-based compound semiconductor such as CZTS is used in a light absorbing layer.SOLUTION: A photoelectric element 10 comprises a light absorbing layer 16 being a p-type semiconductor layer, a buffer layer 18, and a window layer 20. The light absorbing layer 16 is a film of a sulfide-based compound semiconductor containing Cu, Zn, Sn, and S. The buffer layer 18 contains InSand In(OH).
摘要翻译：要解决的问题：在光吸收层中使用诸如CZTS的硫化物类化合物半导体的光电元件中，为了获得更高的发电效率而不需要含有Cd的材料。解决方案：光电元件10包括作为p型半导体层的光吸收层16，缓冲层18和窗口层20.光吸收层16是含有硫化物系化合物半导体的膜，其含有 Cu，Zn，Sn和S.缓冲层18包含In（OH） 3 。版权所有（C）2012，JPO＆INPIT

7. 发明专利

JP2012209518A Photoelectric element and solar battery 审中-公开
标题翻译：光电元件和太阳能电池
公开(公告)号：JP2012209518A
公开(公告)日：2012-10-25
申请号：JP2011075878
申请日：2011-03-30
申请人： Toyota Industries Corp , Toyota Central R&D Labs Inc , 株式会社豊田中央研究所 , 株式会社豊田自動織機
发明人： EGUCHI TATSUYA , AIDA NOBUHIRO , MAKI TSUYOSHI , SHIMO TOSHIHISA , TAKAHASHI HIDEKI , NAKAGAWA SATOSHI , OKUDA SHINYA , FUKANO TATSUO , TAJIMA SHIN , ITO TADAYOSHI , WASHIO TSUKASA
IPC分类号： H01L31/04
CPC分类号： Y02E10/50
摘要： PROBLEM TO BE SOLVED: To make more effective use of visible light within a short wavelength region in a photoelectric element using a light absorption layer including a sulfide compound semiconductor such as CZTS.SOLUTION: A photoelectric element 10 includes a light absorption layer 16 that is a p-type semiconductor layer, a buffer layer 18, and a window layer 20, which are provided in this order. The light absorption layer 16 is a sulfide compound semiconductor film including Cu, Zn, Sn and S. The buffer layer 18 is a ZnMgO film.
摘要翻译：要解决的问题：使用包括诸如CZTS的硫化物化合物半导体的光吸收层，在光电元件的短波长区域内更有效地利用可见光。解决方案：光电元件10包括依次设置的作为p型半导体层的光吸收层16，缓冲层18和窗口层20。光吸收层16是包含Cu，Zn，Sn和S的硫化物化合物半导体膜。缓冲层18是Zn 1-x x O膜。版权所有（C）2013，JPO＆INPIT

8. 发明专利

JP2011146594A Buffer layer for photoelectric element, method of manufacturing the same, and photoelectric element 审中-公开
标题翻译：用于光电元件的缓冲层，其制造方法和光电元件
公开(公告)号：JP2011146594A
公开(公告)日：2011-07-28
申请号：JP2010007352
申请日：2010-01-15
申请人： Institute Of National Colleges Of Technology Japan , Toyota Central R&D Labs Inc , 株式会社豊田中央研究所 , 独立行政法人国立高等専門学校機構
发明人： TAJIMA SHIN , FUKANO TATSUO , KATAGIRI HIRONORI
IPC分类号： H01L31/04 , H01L21/208 , H01L21/477
CPC分类号： Y02E10/541
摘要： PROBLEM TO BE SOLVED: To provide a buffer layer for a photoelectric element such that a CdS buffer layer having excellent characteristics can be formed on a light absorption layer of a CZTS-based semiconductor, a CIGS-based semiconductor, etc., a method of manufacturing the same, and the photoelectric element having the buffer layer obtained by such a method.
SOLUTION: The present invention relates to the method of manufacturing the buffer layer for the photoelectric element including a CBD process of forming a CdS film on the surface of the light absorption layer by dipping a substrate having the light absorption layer formed in a CBD solution containing cadmium salt, a sulfur source, and a sulfide synthesizing auxiliary agent, and a heat treatment process of subjecting the CdS film to a heat treatment in an oxidizing atmosphere at a temperature higher than 200°C and equal to or lower than 350°C; the buffer layer for the photoelectric element obtained by the method; and the photoelectric element having the buffer layer obtained by the method.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：为了提供光电元件的缓冲层，使得可以在CZTS系半导体的光吸收层，CIGS系半导体等上形成具有优异特性的CdS缓冲层，其制造方法和具有通过这种方法获得的缓冲层的光电元件。解决方案：本发明涉及制造用于光电元件的缓冲层的方法，该方法包括通过浸渍形成有吸收层的光吸收层的基板在光吸收层的表面上形成CdS膜的CBD工艺含有镉盐，硫源和硫化物合成助剂的CBD溶液以及在高于200℃且等于或低于350℃的温度下在氧化气氛中对CdS膜进行热处理的热处理工艺 C; 通过该方法获得的光电元件缓冲层; 并且具有通过该方法获得的缓冲层的光电元件。版权所有（C）2011，JPO＆INPIT

9. 发明专利

JP2010013679A Ferromagnetic shape memory alloy sintered compact and method for manufacturing the same 有权
标题翻译：烧结形状记忆合金烧结体及其制造方法
公开(公告)号：JP2010013679A
公开(公告)日：2010-01-21
申请号：JP2008172735
申请日：2008-07-01
申请人： Tohoku Univ , Toyota Central R&D Labs Inc , 国立大学法人東北大学 , 株式会社豊田中央研究所
发明人： TAJIMA SHIN , KAWAURA HIROYUKI , KAINUMA RYOSUKE , ISHIDA KIYOHITO , UMETSU RIE , ITO KOHEI
IPC分类号： C22C19/03 , B22F1/00 , B22F3/00 , C22C1/04 , C22F1/00 , C22F1/10
摘要： PROBLEM TO BE SOLVED: To provide a ferromagnetic shape memory alloy having high mechanical strength, and to provide a manufacturing method which can easily manufacture the ferromagnetic shape memory alloy having high mechanical strength. SOLUTION: The ferromagnetic shape memory alloy sintered compact is obtained by sintering the alloy powder of a ferromagnetic shape memory alloy comprising manganese (Mn) by 25 to 50 atom%, at least one metal selected from the group consisting of indium (In), tin (Sn) and antimony (Sb) by 5 to 18 atom% in total, cobalt (Co) and/or iron (Fe) by 0.1 to 15 atom%, and the balance nickel (Ni) with inevitable impurities; wherein the whole is 100 atom%, and has a porosity of 2 to COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供具有高机械强度的铁磁形状记忆合金，并且提供可以容易地制造具有高机械强度的铁磁形状记忆合金的制造方法。铁磁形状记忆合金烧结体通过将含有25〜50原子％的锰（Mn）的铁磁形状记忆合金的合金粉末，至少一种选自铟（In ），锡（Sn）和锑（Sb）总计为5〜18原子％，钴（Co）和/或铁（Fe）为0.1〜15原子％，余量为不可避免杂质的镍（Ni）其中全部为100原子％，孔隙率为2〜50体积％，最大孔径为≤50μm。将最大粒径为50μm的合金粉末用作原料粉末，从而可以容易地获得具有上述孔隙率和最大孔径的烧结体。版权所有（C）2010，JPO＆INPIT

10. 发明专利

JP2009289812A Method of manufacturing fept-based composite nano particulates 审中-公开
标题翻译：制备基于FEPT的复合纳米颗粒的方法
公开(公告)号：JP2009289812A
公开(公告)日：2009-12-10
申请号：JP2008138241
申请日：2008-05-27
申请人： Toyota Central R&D Labs Inc , 株式会社豊田中央研究所
发明人： TAJIMA SHIN , TAKEUCHI HISATO
IPC分类号： H01F1/06
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing FePt-based composite nano particulates which consists of a composite nano structure and has a high coercive force and a magnetization. SOLUTION: The method of manufacturing the FePt-based composite nano particulates includes: a reaction process of preparing a reaction solution Y containing FePt nanoparticles, a Fe raw material, and a reducing agent in a solvent and heating the reaction solution to obtain composite nano particulates intermediate body having Fe or Fe oxide on surfaces of the FePt nanoparticles; and a heat-treatment process of heat-treating the composite nano particulates intermediate body in a hydrogen atmosphere to obtain FePt-based composite nano particulates having Fe or/and Fe 3 Pt on the surfaces of FePt nanoparticles. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种由复合纳米结构组成并具有高矫顽力和磁化强度的FePt基复合纳米颗粒的制造方法。解决方案：制备FePt基复合纳米颗粒的方法包括：在溶剂中制备含有FePt纳米颗粒，Fe原料和还原剂的反应溶液Y的反应过程，并加热反应溶液以获得在FePt纳米颗粒的表面上具有Fe或Fe氧化物的复合纳米颗粒中间体; 以及在氢气氛中对复合纳米颗粒中间体进行热处理的热处理工艺，以在FePt纳米颗粒的表面上获得具有Fe或/或Fe 3 S 3 Pt的FePt基复合纳米颗粒。版权所有（C）2010，JPO＆INPIT

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