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1. 发明专利

JP2012209518A Photoelectric element and solar battery 审中-公开
标题翻译：光电元件和太阳能电池
公开(公告)号：JP2012209518A
公开(公告)日：2012-10-25
申请号：JP2011075878
申请日：2011-03-30
申请人： Toyota Industries Corp , Toyota Central R&D Labs Inc , 株式会社豊田中央研究所 , 株式会社豊田自動織機
发明人： EGUCHI TATSUYA , AIDA NOBUHIRO , MAKI TSUYOSHI , SHIMO TOSHIHISA , TAKAHASHI HIDEKI , NAKAGAWA SATOSHI , OKUDA SHINYA , FUKANO TATSUO , TAJIMA SHIN , ITO TADAYOSHI , WASHIO TSUKASA
IPC分类号： H01L31/04
CPC分类号： Y02E10/50
摘要： PROBLEM TO BE SOLVED: To make more effective use of visible light within a short wavelength region in a photoelectric element using a light absorption layer including a sulfide compound semiconductor such as CZTS.SOLUTION: A photoelectric element 10 includes a light absorption layer 16 that is a p-type semiconductor layer, a buffer layer 18, and a window layer 20, which are provided in this order. The light absorption layer 16 is a sulfide compound semiconductor film including Cu, Zn, Sn and S. The buffer layer 18 is a ZnMgO film.
摘要翻译：要解决的问题：使用包括诸如CZTS的硫化物化合物半导体的光吸收层，在光电元件的短波长区域内更有效地利用可见光。解决方案：光电元件10包括依次设置的作为p型半导体层的光吸收层16，缓冲层18和窗口层20。光吸收层16是包含Cu，Zn，Sn和S的硫化物化合物半导体膜。缓冲层18是Zn 1-x x O膜。版权所有（C）2013，JPO＆INPIT

2. 发明专利

JP2013115235A Photoelectric element and method for manufacturing the same 审中-公开
标题翻译：光电元件及其制造方法
公开(公告)号：JP2013115235A
公开(公告)日：2013-06-10
申请号：JP2011260081
申请日：2011-11-29
申请人： Toyota Central R&D Labs Inc , 株式会社豊田中央研究所 , Toyota Industries Corp , 株式会社豊田自動織機
发明人： TAJIMA SHIN , FUKANO TATSUO , ITO TADAYOSHI , MAKI TSUYOSHI , EGUCHI TATSUYA
IPC分类号： H01L31/04
CPC分类号： Y02E10/50
摘要： PROBLEM TO BE SOLVED: To provide a photoelectric element which has a CZTS film having a large grain size and less voids and used as an optical absorption layer, and to provide a method for manufacturing the same.SOLUTION: The method for manufacturing a photoelectric element comprises: forming on a lower electrode a precursor (a) consisting of a laminated film laminated by a plurality of thin films including Cu, Zn or Sn, (b) without forming a Cu-Zn phase or a Cu-Zn-S phase during formation of the laminated film and in a sulfidizing process and (c) having a film thickness of 200-700 nm; and sulfidizing the precursor under a predetermined condition. By such a method, obtained is the photoelectric element including an optical absorption layer (a) consisting of a CZTS based compound, (b) including an area formed of only one crystal grain when viewing in a thickness direction of the film, (c) having a porosity of 10% or less and (d) a film thickness of 300-1000 nm.
摘要翻译：要解决的问题：提供一种光电元件，其具有具有大晶粒尺寸和较小空隙的CZTS膜并用作光吸收层，并提供其制造方法。解决方案：制造光电元件的方法包括：在下电极上形成由通过Cu，Zn或Sn的多个薄膜层叠的层叠膜构成的前体（a），（b），而不形成Cu -Zn相或Cu-Zn-S相，和（c）膜厚度为200-700nm; 并在预定条件下硫化前体。通过这样一种方法，获得的光电元件包括由CZTS基化合物构成的光吸收层（a），（b）在膜的厚度方向上观察时仅包含一个晶粒的区域，（b）孔隙率为10％以下，（d）膜厚为300〜1000nm。版权所有（C）2013，JPO＆INPIT

3. 发明专利

JP2013112851A Sulfidation-resistant electrode material and sulfidation-resistant electrode 审中-公开
标题翻译：耐硫电极材料和抗硫化电极
公开(公告)号：JP2013112851A
公开(公告)日：2013-06-10
申请号：JP2011260082
申请日：2011-11-29
申请人： Toyota Central R&D Labs Inc , 株式会社豊田中央研究所 , Toyota Industries Corp , 株式会社豊田自動織機
发明人： TAJIMA SHIN , FUKANO TATSUO , ITO TADAYOSHI , MAKI TSUYOSHI , EGUCHI TATSUYA
IPC分类号： C22C27/04 , C23C14/58 , H01L31/04
CPC分类号： Y02E10/50
摘要： PROBLEM TO BE SOLVED: To provide a sulfidation-resistant electrode material with excellent sulfidation resistance and conductive properties, and a sulfidation-resistant electrode using the same.SOLUTION: The sulfidation-resistant electrode material comprises a Mo-X alloy, wherein the X forms an alloy with Mo, has negatively greater free energy of formation of sulfides at room temperature than Mo, and is a metal element other than alkali metal elements, alkaline-earth metal elements, rare earth metal elements, and elements whose element number is greater than that of Tl. The content of the X is preferably 1-20 at%. In the sulfidation-resistant electrode, at least the region from the surface to 50 nm comprises the Mo-X alloy. The element X is preferably at least one metal element selected from the group consisting of Al and Ga.
摘要翻译：要解决的问题：提供具有优异的耐硫化性和导电性能的耐硫化电极材料和使用其的耐硫化电极。解决方案：耐硫化电极材料包括Mo-X合金，其中X与Mo形成合金，在室温下比Mo具有较大的形成硫化物的自由能，并且是除碱以外的金属元素金属元素，碱土金属元素，稀土金属元素和元素数大于T1的元素。 X的含量优选为1-20原子％。在耐硫化电极中，至少从表面到50nm的区域包括Mo-X合金。元素X优选为选自Al和Ga中的至少一种金属元素。版权所有（C）2013，JPO＆INPIT

4. 发明专利

JP2012124279A Photoelectric element and solar cell 审中-公开
标题翻译：光电元件和太阳能电池
公开(公告)号：JP2012124279A
公开(公告)日：2012-06-28
申请号：JP2010272857
申请日：2010-12-07
申请人： Toyota Central R&D Labs Inc , Toyota Industries Corp , 株式会社豊田中央研究所 , 株式会社豊田自動織機
发明人： EGUCHI TATSUYA , AIDA NOBUHIRO , MAKI TSUYOSHI , FUKANO TATSUO , TAJIMA SHIN , ITO TADAYOSHI , WASHIO TSUKASA
IPC分类号： H01L31/04
CPC分类号： Y02E10/50
摘要： PROBLEM TO BE SOLVED: To obtain higher power generation efficiency in a photoelectric element in which a sulfide-based compound semiconductor such as CZTS is used in a light absorbing layer.SOLUTION: A photoelectric element 10 comprises a light absorbing layer 16 being a p-type semiconductor layer, a buffer layer 18, and a window layer 20, and the light absorbing layer 16, the buffer layer 18, and the window layer 20 are provided in this order. The light absorbing layer 16 is a film of a sulfide-based compound semiconductor containing Cu, Zn, Sn, and S. The photoelectric element 10 further comprises a ZnMgO film 19 between the buffer layer 18 and the window layer 20.
摘要翻译：要解决的问题：为了在光吸收层中使用诸如CZTS的硫化物系化合物半导体的光电元件中获得更高的发电效率。解决方案：光电元件10包括作为p型半导体层的光吸收层16，缓冲层18和窗口层20，以及光吸收层16，缓冲层18和窗口层 20按此顺序提供。光吸收层16是含有Cu，Zn，Sn和S的硫化物系化合物半导体的膜。光电元件10还包含Zn，Zn，在缓冲层18和窗口层20之间的SB POS =“POST”> x“薄膜19”。版权所有（C）2012，JPO＆INPIT

5. 发明专利

JP2012124286A Photoelectric element 有权
标题翻译：光电元件
公开(公告)号：JP2012124286A
公开(公告)日：2012-06-28
申请号：JP2010272952
申请日：2010-12-07
申请人： Toyota Central R&D Labs Inc , Toyota Industries Corp , 株式会社豊田中央研究所 , 株式会社豊田自動織機
发明人： MAKI TSUYOSHI , SHIBATA KENJI , EGUCHI TATSUYA , AIDA NOBUHIRO , FUKANO TATSUO , TAJIMA SHIN , ITO TADAYOSHI , WASHIO TSUKASA
IPC分类号： H01L31/04
CPC分类号： Y02E10/50
摘要： PROBLEM TO BE SOLVED: To achieve both an improvement of quantum efficiency in a short wavelength region and a reduction in the amount of Cd while maintaining high power generation efficiency, in a photoelectric element in which a sulfide-based compound semiconductor such as CZTS is used in a light absorbing layer.SOLUTION: A photoelectric element 10 comprises a light absorbing layer 16 being a p-type semiconductor layer, a buffer layer 18, and a window layer 20. The light absorbing layer 16 is a film of a sulfide-based compound semiconductor containing Cu, Zn, Sn, and S. The buffer layer 18 contains CdS and In(OH).
摘要翻译：要解决的问题为了在保持高发电效率的同时实现短波长区域的量子效率的提高和Cd的量的减少，在其中硫化物系化合物半导体例如 CZTS用于光吸收层。解决方案：光电元件10包括作为p型半导体层的光吸收层16，缓冲层18和窗口层20.光吸收层16是含有硫化物系化合物半导体的膜，其含有 Cu，Zn，Sn和S.缓冲层18含有CdS和In（OH） 3 。版权所有（C）2012，JPO＆INPIT

6. 发明专利

JP2012124285A Photoelectric element 审中-公开
标题翻译：光电元件
公开(公告)号：JP2012124285A
公开(公告)日：2012-06-28
申请号：JP2010272950
申请日：2010-12-07
申请人： Toyota Central R&D Labs Inc , Toyota Industries Corp , 株式会社豊田中央研究所 , 株式会社豊田自動織機
发明人： MAKI TSUYOSHI , AIDA NOBUHIRO , SHIBATA KENJI , EGUCHI TATSUYA , FUKANO TATSUO , TAJIMA SHIN , ITO TADAYOSHI , WASHIO TSUKASA
IPC分类号： H01L31/04 , H01L31/0264
CPC分类号： Y02E10/50
摘要： PROBLEM TO BE SOLVED: To further improve the quantum efficiency on a long-wavelength side of a visible light region, in a photoelectric element obtained by combining a light absorption layer containing a sulfide compound semiconductor such as a CZTS or the like and a buffer layer containing CdS.SOLUTION: A photoelectric element 10 has: a light absorption layer 16 that is a p-type semiconductor layer; a buffer layer 18; and a window layer 20. The light absorption layer 16 is a sulfide compound semiconductor film containing Cu, Zn, Sn, and S. The buffer layer 18 has a CdS film formed by the CBD method using an alkaline reaction liquid that contains cadmium salt, a compound having a thiourea group, and water in which these are dissolved, and that has a mole ratio to cadmium of the thiourea group of 5 to 40.
摘要翻译：要解决的问题为了进一步提高可见光区域的长波长侧的量子效率，在将包含CZTS等硫化物化合物半导体的光吸收层和含有CdS的缓冲层。解决方案：光电元件10具有：作为p型半导体层的光吸收层16; 缓冲层18; 光吸收层16是含有Cu，Zn，Sn和S的硫化物化合物半导体膜。缓冲层18具有通过使用含有镉盐的碱性反应液的CBD法形成的CdS膜，具有硫脲基的化合物和其中溶解有水的化合物，并且与硫脲组的镉的摩尔比为5〜40。版权所有（C）2012，JPO＆INPIT

7. 发明专利

JP2012124278A Photoelectric element and solar cell 审中-公开
标题翻译：光电元件和太阳能电池
公开(公告)号：JP2012124278A
公开(公告)日：2012-06-28
申请号：JP2010272853
申请日：2010-12-07
申请人： Toyota Central R&D Labs Inc , Toyota Industries Corp , 株式会社豊田中央研究所 , 株式会社豊田自動織機
发明人： EGUCHI TATSUYA , AIDA NOBUHIRO , MAKI TSUYOSHI , FUKANO TATSUO , TAJIMA SHIN , ITO TADAYOSHI , WASHIO TSUKASA
IPC分类号： H01L31/04
CPC分类号： Y02E10/50
摘要： PROBLEM TO BE SOLVED: To obtain higher power generation efficiency in a photoelectric element in which a sulfide-based compound semiconductor such as CZTS is used in a light absorbing layer.SOLUTION: A photoelectric element 10 comprises a light absorbing layer 16 being a p-type semiconductor layer, a buffer layer 18, and a window layer 20, and the light absorbing layer 16, the buffer layer 18, and the window layer 20 are provided in this order. The light absorbing layer 16 is a film of a sulfide-based compound semiconductor containing Cu, Zn, Sn, and S. The window layer 20 is a ZnMgO film doped with at least one doping element selected from Ga, Al, and B.
摘要翻译：要解决的问题：为了在光吸收层中使用诸如CZTS的硫化物系化合物半导体的光电元件中获得更高的发电效率。解决方案：光电元件10包括作为p型半导体层的光吸收层16，缓冲层18和窗口层20，以及光吸收层16，缓冲层18和窗口层 20按此顺序提供。光吸收层16是包含Cu，Zn，Sn和S的硫化物系化合物半导体的膜。窗口层20是Zn 掺杂有选自Ga，Al和B的至少一种掺杂元素的POS =“POST”> x O膜。版权所有（C）2012，JPO＆INPIT

8. 发明专利

JP2012124232A P-type semiconductor and photoelectric element 有权
标题翻译： P型半导体和光电元件
公开(公告)号：JP2012124232A
公开(公告)日：2012-06-28
申请号：JP2010271946
申请日：2010-12-06
申请人： Toyota Central R&D Labs Inc , Toyota Industries Corp , 株式会社豊田中央研究所 , 株式会社豊田自動織機
发明人： FUKANO TATSUO , TAJIMA SHIN , ITO TADAYOSHI , WASHIO TSUKASA , EGUCHI TATSUYA , MAKI TSUYOSHI , AIDA NOBUHIRO , SHIMO TOSHIHISA , TAKAHASHI HIDEKI , NAKAGAWA SATOSHI , OKUDA SHINYA
IPC分类号： H01L31/04
CPC分类号： Y02E10/50
摘要： PROBLEM TO BE SOLVED: To provide a new p-type semiconductor using a CZTS-system compound as a base, being low in cost, and having a relatively high conversion efficiency, and to provide a photoelectric element using the same.SOLUTION: A p-type semiconductor has composition represented by a general formula: (CuAg)ZnSnS(here, 0 c, and a+b+c
摘要翻译：要解决的问题：提供一种使用CZTS系统化合物作为基底的新型p型半导体，成本低，转换效率较高，并提供使用该P型半导体的光电元件。解决方案：p型半导体具有由以下通式表示的组成：（Cu 1-x Ag x ） S d （这里，0 c和a + b + c

9. 发明专利

JP2012124284A Photoelectric element 有权
标题翻译：光电元件
公开(公告)号：JP2012124284A
公开(公告)日：2012-06-28
申请号：JP2010272946
申请日：2010-12-07
申请人： Toyota Central R&D Labs Inc , Toyota Industries Corp , 株式会社豊田中央研究所 , 株式会社豊田自動織機
发明人： MAKI TSUYOSHI , AIDA NOBUHIRO , EGUCHI TATSUYA , SHIBATA KENJI , FUKANO TATSUO , TAJIMA SHIN , ITO TADAYOSHI , WASHIO TSUKASA
IPC分类号： H01L31/04 , H01L31/0248
CPC分类号： Y02E10/50
摘要： PROBLEM TO BE SOLVED: To obtain higher power generation efficiency without requiring a material containing Cd, in a photoelectric element in which a sulfide-based compound semiconductor such as CZTS is used in a light absorbing layer.SOLUTION: A photoelectric element 10 comprises a light absorbing layer 16 being a p-type semiconductor layer, a buffer layer 18, and a window layer 20. The light absorbing layer 16 is a film of a sulfide-based compound semiconductor containing Cu, Zn, Sn, and S. The buffer layer 18 contains InSand In(OH).

10. 发明专利

JP2013246142A Temperature sensor and sulfurization furnace 有权
标题翻译：温度传感器和硫化炉
公开(公告)号：JP2013246142A
公开(公告)日：2013-12-09
申请号：JP2012122181
申请日：2012-05-29
申请人： Toyota Central R&D Labs Inc , 株式会社豊田中央研究所
发明人： FUKANO TATSUO
IPC分类号： G01K1/10
摘要： PROBLEM TO BE SOLVED: To provide a temperature sensor which is inexpensive, excellent in corrosion resistance (especially, sulfidation resistance) and high in followability with respect to temperature change, and also to provide a sulfurization furnace using the same.SOLUTION: In a temperature sensor including a temperature sensing part and a protective tube for protecting the temperature sensing part from atmosphere, a tube whose at least outside surface is made of titanium or titanium alloy is used as the protective tube. As the protective tube, a seamless tube made of titanium or titanium alloy is preferable. Such a temperature sensor can be used for temperature measurement of a sulfurization furnace.
摘要翻译：要解决的问题：提供廉价的，耐腐蚀性（特别是耐硫化性）和相对于温度变化的追随性高的温度传感器，以及提供使用该温度传感器的硫化炉。解决方案：在温度传感器包括温度检测部分和用于保护温度感测部分与大气的保护管，其至少外表面由钛或钛合金制成的管被用作保护管。作为保护管，优选由钛或钛合金制成的无缝管。这种温度传感器可用于硫化炉的温度测量。

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