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1. 发明专利

JP2009059915A Photovoltaic device 有权
标题翻译：光电器件
公开(公告)号：JP2009059915A
公开(公告)日：2009-03-19
申请号：JP2007226277
申请日：2007-08-31
申请人： Toyota Central R&D Labs Inc , Toyota Motor Corp , トヨタ自動車株式会社 , 株式会社豊田中央研究所
发明人： TAKEDA YASUHIKO , ITO TADASHI , MOTOHIRO TOMOMI , NAGASHIMA TOMOMICHI
IPC分类号： H01L31/04
CPC分类号： H01L31/035272 , H01L31/0352 , H01L31/06
摘要： PROBLEM TO BE SOLVED: To provide a hot-carrier photovoltaic device adapted to effectively increase conversion efficiency even if residence time of carriers in a light-absorbing layer is short. SOLUTION: The photovoltaic device includes: a light-absorbing layer 2 for absorbing light and generate electrons and positive holes; an electron transfer layer 3 adjoining one side of the light-absorbing layer 2; a hole transfer layer 4 adjoining the other side of the light-absorbing layer 2; a negative electrode 5 provided on the electron transfer layer 3; and a positive electrode 6 provided on the hole transfer layer 4. The electron transfer layer 3 has a conduction band 3a which has an energy band width narrower than that of the conduction band 2c of the light-absorbing layer 2 and passes electrons at a given energy level E e selectively. The hole transfer layer 4 has a valence electron band 4a which has an energy band width narrower than that of the valence electron band 2d of the light-absorbing layer 2 and passes positive holes at a given energy level E h selectively. The light-absorbing layer 2 contains p-type impurities or n-type impurities. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种即使在载体在光吸收层中的停留时间短的情况下也适用于有效地提高转换效率的热载体光电装置。解决方案：光伏器件包括：用于吸收光并产生电子和正空穴的光吸收层2; 邻接光吸收层2的一侧的电子转移层3; 邻接光吸收层2的另一侧的空穴转移层4; 设置在电子转移层3上的负极5; 以及设置在空穴转移层4上的正电极6.电子转移层3具有导带3a，该导带具有比光吸收层2的导带2c的能带宽窄的能带宽，并且在给定的能级E e 。空穴转移层4具有价电子带4a，其能带宽比光吸收层2的价电子带2d的能带宽窄，并以给定能级E h 有选择地。光吸收层2含有p型杂质或n型杂质。版权所有（C）2009，JPO＆INPIT

2. 发明专利

JP2011127968A Nuclear fusion target material, nuclear fusion apparatus, and nuclear fusion method 有权
标题翻译：核熔接目标材料，核熔接装置和核熔覆法
公开(公告)号：JP2011127968A
公开(公告)日：2011-06-30
申请号：JP2009285383
申请日：2009-12-16
申请人： Graduate School For The Creation Of New Photonics Industries , Hamamatsu Photonics Kk , Toyota Central R&D Labs Inc , Toyota Motor Corp , トヨタ自動車株式会社 , 学校法人光産業創成大学院大学 , 株式会社豊田中央研究所 , 浜松ホトニクス株式会社
发明人： SEKINE TAKASHI , KAWASHIMA TOSHIYUKI , SUGA HIROBUMI , KITAGAWA YONEYOSHI , MORI YOSHITAKA , AZUMA HIROZUMI , HIOKI TATSUMI , MOTOHIRO TOMOMI , MIYAMOTO YASUSHI , NAKAMURA NAOKI
IPC分类号： G21B1/03
CPC分类号： H05H6/00 , G21B1/19 , G21B3/006 , Y02E30/16
摘要： PROBLEM TO BE SOLVED: To induce a nuclear fusion reaction with higher efficiency and downsize an apparatus.
SOLUTION: The nuclear fusion apparatus 1 includes a target substrate 7a containing deuterium or tritium, a nuclear fusion target material 7 laminated on the target substrate 7a and including a thin film layer 7b containing deuterium or tritium, a vacuum vessel 5 housing the nuclear fusion target material 7, and a laser device 3 irradiating with two continuous first and second pulse laser light P
1 , P
2 to the thin film layer 7b of the nuclear fusion target material 7. The intensity of the first pulse laser light P
1 and the intensity of the second pulse laser light P
2 are arranged such that the former is smaller than the latter and the thin film layer 7b can be peeled from the target substrate 7a.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：以更高的效率诱导核聚变反应并减小装置的尺寸。解决方案：核聚变装置1包括含有氘或氚的靶基板7a，层叠在目标基板7a上的包含氘或氚的薄膜层7b的核聚变靶材7，核聚变靶材料7和激光装置3照射两个连续的第一和第二脉冲激光P 1 P 2 到核聚变的薄膜层7b 目标材料7.第一脉冲激光P 1 的强度和第二脉冲激光P 2 的强度被布置成使得前者小于后者并且薄膜层7b可以从目标基板7a剥离。版权所有（C）2011，JPO＆INPIT

3. 发明专利

JP2010222465A Array of autonomously responding gel, autonomously responding material, autonomously responding device, autonomously responding method and method for producing array of autonomously responding gel 有权
标题翻译：自动响应凝胶的阵列，自动响应材料，自动响应装置，自动响应方法和自动响应凝胶阵列的方法
公开(公告)号：JP2010222465A
公开(公告)日：2010-10-07
申请号：JP2009070922
申请日：2009-03-23
申请人： Kansai Univ , Toyota Central R&D Labs Inc , Toyota Motor Corp , トヨタ自動車株式会社 , 学校法人関西大学 , 株式会社豊田中央研究所
发明人： KATO NAOHIKO , MOTOHIRO TOMOMI , NIIMIYABARA SHOZO , SHIRAKI YUSUKE , MANABE AKIRA
IPC分类号： C08F220/54 , B81B1/00 , C07F15/00 , C08F230/04
摘要： PROBLEM TO BE SOLVED: To provide an array of an autonomously responding gel autonomously responding by external stimulation, an autonomously responding material and a method for producing the array of the autonomously responding gel, and to provide an autonomously responding device to control autonomous response of the array of the autonomously responding gel by electric potential and an autonomously responding method. SOLUTION: The array of the autonomously responding gel has a plurality of protrusions formed of the autonomously responding gel and having a diameter of 1-1,000 μm and an axial height of 20-400 μm and an autonomously responding gel layer formed of the autonomously responding gel same as the material of the protrusions and connected with the protrusion at a part of the axial direction of the protrusion. The autonomously responding material contains a reaction substrate filled in spaces of the autonomously responding gel array. The array of the autonomously responding gel is produced by ultraviolet irradiation through a photomask. The autonomous response of the autonomously responding material is controlled by application of electric potential to the autonomously responding gel. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供通过外部刺激自主响应的自主响应凝胶的阵列，自主应答材料和用于产生自主响应凝胶阵列的方法，并提供自主响应的装置来控制自主通过电位对自发响应的凝胶阵列的响应和自主响应的方法。解决方案：自主响应的凝胶的阵列具有由自主响应的凝胶形成的多个突起，其直径为1-1000μm，轴向高度为20-400μm，并且自发响应的凝胶层由自主响应的凝胶与突起的材料相同，并且在突起的轴向的一部分处与突起连接。自主响应的材料包含填充在自主响应的凝胶阵列的空间中的反应基板。自发响应凝胶的阵列通过光掩模的紫外线照射产生。自主响应材料的自主反应是通过将电位施加到自主响应的凝胶来控制的。版权所有（C）2011，JPO＆INPIT

4. 发明专利

JP2008130898A Quantum dot array and manufacturing method thereof 审中-公开
标题翻译：量子阵列及其制造方法
公开(公告)号：JP2008130898A
公开(公告)日：2008-06-05
申请号：JP2006315562
申请日：2006-11-22
申请人： Toyota Central R&D Labs Inc , Toyota Motor Corp , トヨタ自動車株式会社 , 株式会社豊田中央研究所
发明人： NAGASHIMA TOMOMICHI , TAKEDA YASUHIKO , ITO TADASHI , MOTOHIRO TOMOMI
IPC分类号： H01L29/06 , C23C14/24 , H01L21/203
摘要： PROBLEM TO BE SOLVED: To obtain a quantum dot array in which quantum dots in a relatively small size are uniformly distributed without being short-circuited with each other. SOLUTION: A manufacturing method of a quantum dot array includes the steps of: providing a plurality of pole-shaped parts (4) each including a quantum dot (6) vertically held between barrier layers (8a, 8) on a substrate (2), forming a base part for forming the plurality of pole-shaped parts (4) on the substrate (2) by vapor-depositing a first material obliquely while rotating the substrate (2) in order to form a quantum dot array (100); and then vapor-depositing the materials of the barrier layers and the materials of the quantum dots sequentially obliquely while stopping rotating the substrate, thereby forming the quantum dots vertically held between the barrier layers on the base part. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：为了获得量子点阵列，其中相对小尺寸的量子点彼此均匀地分布而不相互短路。解决方案：量子点阵列的制造方法包括以下步骤：提供多个极性部分（4），每个极性部分包括垂直保持在衬底上的阻挡层（8a，8）之间的量子点（6）（2），通过在旋转基板（2）的同时使第一材料倾斜地气相沉积，形成用于在基板（2）上形成多个极形部分（4）的基部，以形成量子点阵列 100）; 然后在停止旋转衬底的同时顺序地倾斜地气相沉积阻挡层的材料和量子点的材料，从而形成垂直保持在基底上的阻挡层之间的量子点。版权所有（C）2008，JPO＆INPIT

5. 发明专利

JP2012114378A Photoelectric conversion device 审中-公开
标题翻译：光电转换器件
公开(公告)号：JP2012114378A
公开(公告)日：2012-06-14
申请号：JP2010264316
申请日：2010-11-26
申请人： Imperial Innovetions Ltd , Toyota Central R&D Labs Inc , Toyota Motor Corp , インペリアルイノベーションズリミテッドImperial Innovations Limited , トヨタ自動車株式会社 , 株式会社豊田中央研究所
发明人： EEKDAKS NICHOLAS J , DANIEL J FARRELL , NAGASHIMA TOMOMICHI , TAKEDA YASUHIKO , NISHIKAWA KAZUTAKA , MOTOHIRO TOMOMI
IPC分类号： H01L31/052 , H01L31/04
CPC分类号： H01L31/055 , H01L31/02165 , H01L31/02168 , H01L31/035218 , H01L31/075 , Y02E10/52 , Y02E10/548
摘要： PROBLEM TO BE SOLVED: To provide a photoelectric conversion device capable of increasing photoelectric conversion efficiency.SOLUTION: The photoelectric conversion device includes: a wavelength conversion part that generates electrons and holes by absorbing light and recombines the generated electrons and holes to generate monochromatic light; and a photoelectric conversion part that generates electric power by absorbing the monochromatic light generated by the wavelength conversion part. The wavelength conversion part integrates a hot carrier mechanism to an optical filter and a photonic crystal, or adds a wavelength selection mechanism of surface plasmon resonance of a metal nanoparticle, etc., to the hot carrier mechanism, thereby improving efficiency to generate monochromatic light from sunlight, and includes a function for adjusting wavelength of light freely.
摘要翻译：解决的问题：提供能够提高光电转换效率的光电转换装置。解决方案：光电转换装置包括：波长转换部分，通过吸收光产生电子和空穴，并重新组合产生的电子和空穴以产生单色光; 以及光电转换部，其通过吸收由所述波长转换部生成的单色光而发生电力。波长转换部将热载体机构与光学滤波器和光子晶体结合，或者将金属纳米粒子等的表面等离子体共振的波长选择机构添加到热载体机构，从而提高效率，从而从阳光，并且包括自由调节光的波长的功能。版权所有（C）2012，JPO＆INPIT

6. 发明专利

JP2010058185A Array of autonomic responsive gel and production method of the same, and autonomic responsive material and production method of the same 有权
标题翻译：自动响应凝胶的阵列及其生产方法及其自动响应材料及其生产方法
公开(公告)号：JP2010058185A
公开(公告)日：2010-03-18
申请号：JP2008224157
申请日：2008-09-01
申请人： Kansai Univ , Toyota Central R&D Labs Inc , Toyota Motor Corp , トヨタ自動車株式会社 , 学校法人関西大学 , 株式会社豊田中央研究所
发明人： KATO NAOHIKO , MOTOHIRO TOMOMI , NIIMIYABARA SHOZO , MANABE AKIRA
IPC分类号： B82B1/00 , B82B3/00 , C25D11/20
摘要： PROBLEM TO BE SOLVED: To provide an array of autonomic responsive gel in a nanometer unit and a production method of the array, and to provide an autonomic responsive material in a nanometer unit and a production method of the material.
SOLUTION: The array of autonomic responsive gel includes a porous anodized alumina and autonomic responsive gel present in the pores of the anodized alumina. The autonomic responsive material comprises an array of autonomic responsive gel using the porous anodized alumina used as a template and a fixation base, and a reaction matrix transmitting reaction diffusion.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供纳米单位的自主响应凝胶阵列和阵列的制备方法，并提供纳米单位的自主应答材料和材料的制备方法。解决方案：自主响应凝胶的阵列包括存在于阳极化氧化铝孔中的多孔阳极氧化铝和自发响应凝胶。自主响应材料包括使用用作模板的多孔阳极氧化的氧化铝和固定基的自主响应凝胶的阵列，以及透射反应扩散的反应基体。版权所有（C）2010，JPO＆INPIT

7. 发明专利

JP2010251478A Solar cell module 有权
标题翻译：太阳能电池模块
公开(公告)号：JP2010251478A
公开(公告)日：2010-11-04
申请号：JP2009098312
申请日：2009-04-14
申请人： Toyota Central R&D Labs Inc , 株式会社豊田中央研究所
发明人： OHIGATA KEI , MOTOHIRO TOMOMI
IPC分类号： H01L31/042 , H01M14/00
CPC分类号： Y02E10/542 , Y02E10/549
摘要： PROBLEM TO BE SOLVED: To provide a solar cell module which uses a dye-sensitized solar cell or a thin film solar cell, and which is adapted to improve power generation efficiency and to facilitate manufacture thereof. SOLUTION: The solar cell module has a cell unit 10 comprising a plurality of solar cells 20 laminated therein, and a support 30 for supporting the cell unit 10. The solar cell 20 is a dye-sensitized solar cell or a thin film solar cell, the support 30 has a plate-like base part 32 and at least a pair of side wall parts 31 and 31 prepared on the base part 32 and arranged so as to face each other, and the cell unit is disposed between the pair of side wall parts 31 and 31, and is tilted so that light 100 will enter aslant to a normal line direction of a surface 20a on which the light 100 to the solar cell is incident. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种使用染料敏化太阳能电池或薄膜太阳能电池的太阳能电池模块，其适于提高发电效率并促进其制造。解决方案：太阳能电池模块具有包括多个层叠在其中的太阳能电池20的电池单元10和用于支撑电池单元10的支撑件30.太阳能电池20是染料敏化太阳能电池或薄膜太阳能电池，支撑体30具有板状基部32和至少一对侧壁部31和31，所述至少一对侧壁部31和31准备在基部32上并且彼此相对配置，并且电池单元设置在该对之间的侧壁部31和31倾斜，使得光100将朝向其上入射到太阳能电池的光100的表面20a的法线方向倾斜。版权所有（C）2011，JPO＆INPIT

8. 发明专利

JP2009272544A Etchant, and method of manufacturing semiconductor element 有权
标题翻译：蚀刻和制造半导体元件的方法
公开(公告)号：JP2009272544A
公开(公告)日：2009-11-19
申请号：JP2008123539
申请日：2008-05-09
申请人： Institute Of National Colleges Of Technology Japan , Toyota Central R&D Labs Inc , 株式会社豊田中央研究所 , 独立行政法人国立高等専門学校機構
发明人： ITO TADASHI , FUKANO TATSUO , MOTOHIRO TOMOMI , KATAGIRI HIRONORI
IPC分类号： H01L21/306 , H01L31/04
CPC分类号： Y02E10/541
摘要： PROBLEM TO BE SOLVED: To provide: an etchant which is usable to etch a semiconductor element which has an oxide layer and a sulfide layer of base metals on an upper-surface side and a metal layer containing high-fusion-point metal on a substrate side, and etches layers together without losing the metal layer; and a method of manufacturing the semiconductor element using the etchant. SOLUTION: The etchant is usable to etch the semiconductor element which has the oxide layer and sulfide layer of base metals on the upper-surface side and the metal layer containing the high-fusion-point metal on the substrate side, and contains second acid having higher oxidation power than phosphorus acid and a peel inhibitor for inhibiting an organic coating from peeling, the rest being a diluent. The method of manufacturing the semiconductor element includes an etching process of etching the semiconductor element which has the oxide layer and sulfide layer of base metals on the upper-surface side and the metal layer containing the high-fusion-point metal on the substrate side by using such the etchant. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供：可用于蚀刻在上表面侧具有氧化物层和贱金属的硫化物层的半导体元件和含有高熔点金属的金属层的蚀刻剂在基板一侧上蚀刻层而不损失金属层; 以及使用蚀刻剂制造半导体元件的方法。解决方案：蚀刻剂可用于蚀刻具有上表面侧的氧化物层和贱金属的硫化物层和在基板侧上含有高熔点金属的金属层的半导体元件，并且包含具有比磷酸更高的氧化力的第二种酸和用于抑制有机涂层剥离的剥离抑制剂，其余为稀释剂。半导体元件的制造方法包括：蚀刻具有上表面侧的氧化物层和贱金属的硫化物层的半导体元件和在基板侧含有高熔点金属的金属层的蚀刻工序，使用这种蚀刻剂。版权所有（C）2010，JPO＆INPIT

9. 发明专利

JP2013080849A Superconductive coil 有权
标题翻译：超导线圈
公开(公告)号：JP2013080849A
公开(公告)日：2013-05-02
申请号：JP2011220638
申请日：2011-10-05
申请人： Toyota Central R&D Labs Inc , 株式会社豊田中央研究所
发明人： SUGIMOTO NORIAKI , MOTOHIRO TOMOMI
IPC分类号： H01F6/06
摘要： PROBLEM TO BE SOLVED: To provide a superconductive coil having high reliability in a new and novel form.SOLUTION: A superconductive coil 2 comprises support substrates 3 and coil parts 4. Grooves are formed on the support substrates 3. The coil part 4 has a superconductive wire filled in the groove. Furthermore, the plural support substrates 3 are laminated, and on the support substrates 3 adjacent to each other in a lamination direction, the superconductive wires of the coil parts 4 are electrically connected. When the adjacent superconductive wires in the coil parts 4 are observed in a longitudinal direction, it is desirable that adjacent portions appear repeatedly.

10. 发明专利

JP2012124288A Photoelectric conversion element 有权
标题翻译：光电转换元件
公开(公告)号：JP2012124288A
公开(公告)日：2012-06-28
申请号：JP2010273013
申请日：2010-12-07
申请人： Toyota Central R&D Labs Inc , 株式会社豊田中央研究所
发明人： TAKEDA YASUHIKO , MOTOHIRO TOMOMI
IPC分类号： H01L31/04
CPC分类号： Y02E10/544
摘要： PROBLEM TO BE SOLVED: To provide a novel photoelectric conversion element with a simple structure capable of increasing the effect of suppressing the dissipation of energy of excited carriers to phonon.SOLUTION: The photoelectric conversion element has the following constitutions. (1) The photoelectric conversion element comprises a light absorption layer; a first selective contact formed on an electron extraction side of the light absorption layer; a negative electrode formed on outside of the first selective contact; and a positive electrode formed on a hole extraction side of the light absorption layer. (2) The light absorption layer has (a) intermediate level in a band gap, and (b) hot carrier generated by absorbing the light and having equal to or more than 20 ps of hot carrier lifetime.
摘要翻译：要解决的问题：提供一种具有简单结构的新型光电转换元件，其能够增加抑制激发载流子对声子的能量耗散的效果。光电转换元件具有以下结构。（1）光电转换元件包括光吸收层; 形成在光吸收层的电子提取侧的第一选择性接触; 形成在所述第一选择性接触的外侧的负极; 以及形成在光吸收层的空穴提取侧的正极。（2）光吸收层具有（a）带隙的中间水平，（b）通过吸收光而产生的热载流子，具有等于或大于20ps的热载流子寿命。版权所有（C）2012，JPO＆INPIT

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