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1. 发明专利

JP2012250888A SiC SINGLE CRYSTAL, METHOD FOR PRODUCING THE SAME, SiC WAFER, AND SEMICONDUCTOR DEVICE 有权
标题翻译： SiC单晶，其制造方法，SiC WAFER和SEMICONDUCTOR DEVICE
公开(公告)号：JP2012250888A
公开(公告)日：2012-12-20
申请号：JP2011125886
申请日：2011-06-05
申请人： Toyota Central R&D Labs Inc , 株式会社豊田中央研究所 , Denso Corp , 株式会社デンソー , Toyota Motor Corp , トヨタ自動車株式会社 , Showa Denko Kk , 昭和電工株式会社
发明人： GUNJISHIMA TSUKURU , SHIGEFUJI KEISUKE , URAGAMI YASUSHI , YAMADA MASANORI , ADACHI AYUMI , KOBAYASHI MASAKAZU
IPC分类号： C30B29/36 , H01L21/203
CPC分类号： C30B23/025 , C30B23/005 , C30B29/36 , H01L21/02378 , H01L21/0243 , H01L21/02433 , H01L21/02529 , H01L21/02587 , H01L21/02609 , H01L29/1608 , Y10T428/21
摘要： PROBLEM TO BE SOLVED: To provide an SiC single crystal having few anisotropic crystals or heterogeneous polymorphic crystals, allowing cutting out of a large-diameter {0001} plane substrate, and to provide a method for producing the SiC single crystal, and an SiC wafer cut out from such an SiC single crystal.SOLUTION: When producing an SiC single crystal having a large-diameter {0001} plane by repeating a-plane growth, the a-plane of the SiC single crystal is allowed to grow so that the ratio S(=S×100/S) of the area (S) of a Si plane side facet region to the whole area (S) of the growth plane is kept at 20% or less.
摘要翻译：要解决的问题：为了提供一种具有很少的各向异性晶体或异相多晶体的SiC单晶，可以切割出大直径ä10001平面衬底，并提供一种SiC单晶的制造方法，从这种SiC单晶切出SiC晶片。解决方案：通过重复a面生长制造具有大直径ä0001}面的SiC单晶时，可以使SiC单晶的a面成长，使S （= S 1 ×100 / S 2 ）（S 2 ）的Si平面侧面区域的“POST”> 1 保持在20％以下。版权所有（C）2013，JPO＆INPIT

2. 发明专利

JP2013139347A Apparatus for producing single crystal, single crystal, method for producing the single crystal, wafer, and semiconductor device 有权
标题翻译：用于生产单晶，单晶的装置，用于生产单晶，晶体和半导体器件的方法
公开(公告)号：JP2013139347A
公开(公告)日：2013-07-18
申请号：JP2011289966
申请日：2011-12-28
申请人： Toyota Central R&D Labs Inc , 株式会社豊田中央研究所 , Denso Corp , 株式会社デンソー , Showa Denko Kk , 昭和電工株式会社 , Toyota Motor Corp , トヨタ自動車株式会社
发明人： GUNJISHIMA TSUKURU , YAMADA MASANORI , KOBAYASHI MASAKAZU , ADACHI AYUMI
IPC分类号： C30B23/06 , C30B29/36 , C30B29/38
摘要： PROBLEM TO BE SOLVED: To provide: an apparatus for producing a single crystal, wherein a long single crystal that is less likely to cause flaws and cracks can be produced without increasing a processing cost and processing time: a method for producing the single crystal using the apparatus; and the single crystal and a wafer, both being produced by using such method.SOLUTION: A temperature gradient-controlling member 26a is arranged around a seed crystal 4, and then a local temperature gradient-relieving member 28a is arranged between the seed crystal 4 and the temperature gradient-controlling member 26a, wherein the local temperature gradient-relieving member has a function of relieving a maximal value of a temperature gradient caused in a region right above a growth axis direction of the seed crystal 4 in a single crystal 6 growing right above the seed crystal 4. The temperature gradient-controlling member 26a is arranged around the seed crystal 4 or the single crystal 6 so that, in a predetermined term from when at least the single crystal 6 starts growing till when the single crystal ends the growing, a temperature gradient may occur in which: a heat flows from the outside of the single crystal 6 toward the inside thereof in the vicinity of a growth face side of the single crystal 6; and the heat is released from the inside of the single crystal 6 toward the outside thereof in the vicinity of a seed crystal 4 side of the single crystal 6.
摘要翻译：要解决的问题：提供：一种用于制造单晶的装置，其中可以在不增加处理成本和处理时间的情况下制造不太可能引起缺陷和裂纹的长单晶：使用装置; 以及通过使用这种方法制造的单晶和晶片。解决方案：温度梯度控制构件26a布置在晶种4周围，然后局部温度梯度缓冲构件28a布置在籽晶4之间和温度梯度控制部件26a，其中局部温度梯度缓冲部件具有在生长的单晶6中释放在晶种4的生长轴方向正上方的区域中产生的温度梯度的最大值的功能温度梯度控制部件26a配置在晶种4或单晶6的周围，以从至少单晶6开始生长至单晶结束为止的规定期间可能会发生温度梯度，其中：在s的生长面侧附近，热量从单晶6的外侧向其内部流动单晶6; 并且在单晶6的籽晶4侧附近，从单晶6的内部朝向外部释放热。

3. 发明专利

JP2013095632A SiC SINGLE CRYSTAL, METHOD FOR PRODUCING THE SAME, SiC WAFER, SEMICONDUCTOR DEVICE, AND RAW MATERIAL FOR PRODUCING SiC SINGLE CRYSTAL 有权
标题翻译： SiC单晶，其制造方法，SiC波导，半导体器件和用于生产SiC单晶的原材料
公开(公告)号：JP2013095632A
公开(公告)日：2013-05-20
申请号：JP2011239605
申请日：2011-10-31
申请人： Toyota Central R&D Labs Inc , 株式会社豊田中央研究所 , Toyota Motor Corp , トヨタ自動車株式会社 , Denso Corp , 株式会社デンソー , Showa Denko Kk , 昭和電工株式会社
发明人： SHIGEFUJI KEISUKE , GUNJISHIMA TSUKURU , URAGAMI YASUSHI , KOBAYASHI MASAKAZU , ADACHI AYUMI
IPC分类号： C30B29/36
摘要： PROBLEM TO BE SOLVED: To provide: an SiC single crystal having few hollow defects or inclusions; a method for producing the same; an SiC wafer and a semiconductor device manufactured from such an SiC single crystal; and a raw material for producing the SiC single crystal which is suitable for producing an SiC single crystal having few hollow defects or inclusions.SOLUTION: An SiC single crystal includes a single crystal obtained by growing SiC on a growing surface by using a seed crystal utilizing a surface approximately vertical to {0001} surface as the growing surface, wherein the density of hollow defects extending approximately in parallel with a growth direction of the single crystal is ≤600/cm. An SiC wafer and a semiconductor device using the SiC single crystal are also provided. Such an SiC single crystal is obtained by growing a single crystal on an a-surface growth substrate by using a raw material for producing the SiC single crystal obtained by subliming preliminarily ≥2% of the mass of SiC powder.
摘要翻译：要解决的问题：提供：具有很少中空缺陷或夹杂物的SiC单晶; 其制造方法; SiC晶片和由这种SiC单晶制造的半导体器件; 以及用于制造SiC单晶的原料，其适合于制造具有中空缺陷或夹杂物的SiC单晶。解决方案：SiC单晶包括通过使用大致垂直于ä0001}表面的表面的晶种在生长表面上生长SiC获得的单晶作为生长表面，其中中空缺陷的密度大致平行延伸单晶的生长方向为≤600/ cm 2 。还提供了SiC晶片和使用SiC单晶的半导体器件。这样的SiC单晶通过使用用于制备通过初步升高SiC粉末质量的≥2％而获得的SiC单晶的原料，在单面生长衬底上生长单晶来获得。版权所有（C）2013，JPO＆INPIT

4. 发明专利

JP2014159355A SiC SINGLE CRYSTAL, SiC WAFER, SiC SUBSTRATE, AND SiC DEVICE 有权
标题翻译： SiC单晶，SiC WAFER，SiC衬底和SiC器件
公开(公告)号：JP2014159355A
公开(公告)日：2014-09-04
申请号：JP2013031554
申请日：2013-02-20
申请人： Toyota Central R&D Labs Inc , 株式会社豊田中央研究所 , Denso Corp , 株式会社デンソー , Showa Denko Kk , 昭和電工株式会社
发明人： GUNJISHIMA TSUKURU , KANZAWA YUSUKE , URAGAMI YASUSHI , KOBAYASHI MASAKAZU
IPC分类号： C30B29/36
CPC分类号： C30B29/36 , C30B19/12 , C30B23/025 , C30B25/186 , C30B29/64 , H01L29/045 , H01L29/1608 , H01L29/32
摘要： PROBLEM TO BE SOLVED: To provide a SiC single crystal in which a specific type of dislocations unevenly exists in a specific region, and a SiC wafer produced using the SiC single crystal, a SiC substrate, and a SiC device.SOLUTION: A SiC single crystal has on a plane generally parallel to C-plane a region (A) where edge dislocations with Burger's vector (A) in a specific direction are unevenly distributed, and a region (B) where basal surface dislocations with a Burger's vector (B) in a specific direction are unevenly distributed. The region (A) is disposed in direction with regard to a facet part, and the region (B) is disposed in direction with regard to the facet part. A SiC substrate can be provided by cutting the SiC wafer from the SiC single crystal generally parallel to the C-plane, and by cutting the SiC wafer such that the region (A) or the region (B) is mainly contained. A SiC device is produced by using this SiC substrate.
摘要翻译：要解决的问题：提供一种在特定区域中不均匀地存在特定类型的位错的SiC单晶，以及使用SiC单晶，SiC衬底和SiC器件制造的SiC晶片。解决方案：SiC单晶晶体在大致平行于C面的平面上具有汉堡向量（A）在特定方向上的边缘位错不均匀分布的区域（A）以及具有汉堡向量（B）的基面位错的区域（B）在特定方向上分布不均匀。区域（A）相对于小面部分设置在<1-100>方向上，并且区域（B）相对于小面部分设置在<11-20>方向上。可以通过从大致平行于C面的SiC单晶切割SiC晶片，并且通过切割SiC晶片使得主要包含区域（A）或区域（B）来提供SiC衬底。通过使用该SiC衬底制造SiC器件。

5. 发明专利

JP2014034504A Method of producing sublimable single crystal 有权
标题翻译：生产可接受的单晶的方法
公开(公告)号：JP2014034504A
公开(公告)日：2014-02-24
申请号：JP2012177834
申请日：2012-08-10
申请人： Toyota Central R&D Labs Inc , 株式会社豊田中央研究所 , Denso Corp , 株式会社デンソー , Showa Denko Kk , 昭和電工株式会社
发明人： GUNJISHIMA TSUKURU , SUGIYAMA NAOHIRO , URAGAMI YASUSHI , MASUDA TAKASHI , KOBAYASHI MASAKAZU
IPC分类号： C30B29/36 , C30B33/02
摘要： PROBLEM TO BE SOLVED: To provide a method of producing a sublimable single crystal by which cracking of the sublimable single crystal such as SiC due to sublimation and thermal stress of a surface of the single crystal can be suppressed.SOLUTION: A gas generation source 12 capable of generating a gas including a component constituting a sublimable single crystal is arranged in a container 10' and a sublimable single crystal 18' is arranged at a position opposed to the gas generation source 12. Then the sublimable single crystal 18' is annealed while given a temperature gradient ΔT so that the gas generation source 12 is at a higher temperature. After the annealing, a crystal may be further grown on a growth surface.
摘要翻译：要解决的问题：提供一种生产可升华的单晶的方法，由此可以抑制由于升华引起的SiC等升华性单晶和单晶表面的热应力的破裂。解决方案：气体发生源12 能够产生包含构成升华性单晶的成分的气体配置在容器10'中，升华型单晶18'配置在与气体发生源12相对的位置。然后使升华型单晶18'退火，同时给出温度梯度Dgr; T，使得气体发生源12处于较高温度。退火后，可以在生长面上进一步生长晶体。

6. 发明专利

JP2014101246A Single crystal manufacturing apparatus and single crystal manufacturing method 有权
标题翻译：单晶制造装置和单晶制造方法
公开(公告)号：JP2014101246A
公开(公告)日：2014-06-05
申请号：JP2012253764
申请日：2012-11-19
申请人： Toyota Central R&D Labs Inc , 株式会社豊田中央研究所 , Denso Corp , 株式会社デンソー , Showa Denko Kk , 昭和電工株式会社
发明人： GUNJISHIMA TSUKURU , KONDO HIROYUKI , KOBAYASHI MASAKAZU
IPC分类号： C30B23/06 , C30B29/36
摘要： PROBLEM TO BE SOLVED: To provide a single crystal manufacturing apparatus capable of independently controlling a temperature distribution around a growth surface and a temperature distribution of a raw material part, and a method for manufacturing the single crystal using the single crystal manufacturing apparatus.SOLUTION: A single crystal manufacturing apparatus 10a comprises: a crucible 20 for fixing a seed crystal 22 for growing a single crystal in the upper part and charging a raw material 24 for growing the single crystal in the lower part; a first heating part 30 for mainly heating the raw material 24; a perforated heat insulation member 40 arranged around the crucible 20 above the first heating part 30; and distance adjustment means for adjusting a distance between at least a part of the heat insulation member 40 and the first heating part 30. The single crystal can be manufactured by growing a single crystal on the growth surface of the seed crystal 22 while adjusting the distance between at least a part of the heat insulation member 40 and the first heating part 30 during its growth using the single crystal manufacturing apparatus 10a.
摘要翻译：要解决的问题：提供能够独立地控制生长面周围的温度分布和原料部分的温度分布的单晶制造装置，以及使用单晶制造装置制造单晶的方法。解决方案：单晶制造装置10a包括：坩埚20，用于固定用于在上部生长单晶的晶种22，并在下部充填用于生长单晶的原料24; 用于主要加热原料24的第一加热部30; 布置在第一加热部件30上方的坩埚20周围的穿孔隔热部件40; 以及距离调节装置，用于调节绝热构件40的至少一部分与第一加热部30之间的距离。单晶可以通过在晶种22的生长表面上生长单晶而同时调节距离在使用单晶制造装置10a的生长期间，在隔热构件40的至少一部分与第一加热部30之间。

7. 发明专利

JP2008109070A Solid-state electrolytic capacitor element and method for manufacturing the same 审中-公开
标题翻译：固态电解电容器元件及其制造方法
公开(公告)号：JP2008109070A
公开(公告)日：2008-05-08
申请号：JP2007064259
申请日：2007-03-14
申请人： Showa Denko Kk , 昭和電工株式会社
发明人： KUROZUMI TADATOSHI , OMORI KAZUHIRO , KOBAYASHI MASAKAZU , NAKASAKI SUSUMU
IPC分类号： H01G9/04 , H01G9/00 , H01G9/052
摘要： PROBLEM TO BE SOLVED: To provide a solid-state electrolytic capacitor in which a conductor layer is formed on a solid-state electrolytic layer formed on a dielectric coating layer formed on the surface of valve action metal, which is excellent in ESR characteristics by forming a thin and uniformly precise conductor layer and a method for manufacturing this solid-state electrolytic capacitor. SOLUTION: This solid-state electrolytic capacitor element is configured by forming a dielectric coating layer on the surface of a valve action metal having micropores, and successively forming a solid-state electrolytic layer and a conductor layer on the dielectric coating layer, wherein the conductor layer may include at least a metallic plating layer or the conductor layer may include a metallic paste layer and a metallic plating layer, and at least one type of the metallic type of the metallic paste layer and the metallic type of the metallic plating layer is the same. This method for manufacturing this sold-state electrolytic capacitor element and a solid-state electrolytic capacitor acquired by this method are provided. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种固体电解电容器，其中在形成在阀作用金属表面上的电介质涂层上形成的固态电解质层上形成导体层，其ESR优异通过形成薄而均匀的导体层的特性和制造该固态电解电容器的方法。解决方案：该固态电解电容器元件通过在具有微孔的阀作用金属的表面上形成电介质涂层，并在电介质涂层上依次形成固态电解质层和导体层，其中导体层可以至少包括金属镀层，或者导体层可以包括金属膏层和金属镀层，以及至少一种金属类金属膏层和金属类金属镀层层是一样的提供了制造该销售状态的电解电容器元件的方法和通过该方法获得的固态电解电容器。版权所有（C）2008，JPO＆INPIT

8. 发明专利

JP2007217782A Corrosion-resistant film having fluoride film of rare earth element, and its manufacturing method 审中-公开
标题翻译：具有稀土元素氟化膜的耐腐蚀膜及其制造方法
公开(公告)号：JP2007217782A
公开(公告)日：2007-08-30
申请号：JP2006043012
申请日：2006-02-20
申请人： Showa Denko Kk , 昭和電工株式会社
发明人： KOBAYASHI MASAKAZU , KOJIMA AKIRA , UEDA TAKASHI , SAITO MAKOTO
IPC分类号： C23C28/04 , C23C4/18 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide a dense corrosion-resistant film thinner in film thickness and having high plasma corrosion resistance, and its manufacturing method for depositing the corrosion-resistant film at the lower temperature as compared with the conventional art.
SOLUTION: The corrosion-resistant film has a fluoride film of rare earth elements obtained by fluorination of an oxide film of rare earth elements deposited on a base material. Preferably, the oxide film of the rare earth elements is composed of an aggregate of oxide particles of the rare earth elements having the volume averaged grain size being 10-300 nm.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供薄膜厚度较薄并且具有高等离子体耐腐蚀性的致密耐腐蚀膜及其与常规技术相比在较低温度下沉积耐腐蚀膜的制造方法。解决方案：耐腐蚀膜具有通过氟化沉积在基材上的稀土元素的氧化膜获得的稀土元素的氟化物膜。优选地，稀土元素的氧化物膜由体积平均粒径为10〜300nm的稀土元素的氧化物粒子的集合体构成。版权所有（C）2007，JPO＆INPIT

9. 发明专利

JP2007126349A Y2o3 film and method for producing the same 审中-公开
标题翻译： Y2O3薄膜及其制造方法
公开(公告)号：JP2007126349A
公开(公告)日：2007-05-24
申请号：JP2006201312
申请日：2006-07-24
申请人： Showa Denko Kk , 昭和電工株式会社
发明人： UEDA TAKASHI , SAITO MAKOTO , KOBAYASHI MASAKAZU , KOJIMA AKIRA
IPC分类号： C01F17/00 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide a member having high resistance to plasma corrosion required for a plasma etching chamber of a semiconductor manufacturing apparatus or a plasma treatment apparatus for a liquid crystal device or the like.
SOLUTION: An Y
2 O
3 film comprises an aggregate of Y
2 O
3 particles having a volume-average particle diameter of 10-300 nm. A Y
2 O
3 film is obtained by drying and heat-treating a Y
2 O
3 slurry having a volume average particle diameter, in a dispersed state, of 10-300 nm. The dispersion medium of the Y
2 O
3 slurry is a derivative of a polyhydric alcohol. The Y
2 O
3 slurry includes a β-diketone as a dispersant. The Y
2 O
3 slurry includes a β-diketone metal complex as a binder. The Y
2 O
3 slurry is a mixed slurry of two or more kinds of a slurry having a dispersion particle size with a different volume average particle diameter. The method for producing the film comprises applying the Y
2 O
3 slurry having a volume average particle diameter, in a dispersed state, of 10-300 nm and a Y
2 O
3 density of 0.1-40 mass% on a substrate so that the film forming thickness of one time may become 10 nm-5 μm and carrying out a heat treatment at 100-300°C for 10 minutes-5 hours after the film formation.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种对半导体制造装置的等离子体蚀刻室或液晶装置等离子体处理装置等所需的等离子体腐蚀具有高耐性的部件。
解决方案：Y Y SB SB 3 O 3 / SB> 3薄膜包含具有体积平均粒径为10-300nm。通过干燥和热处理具有体积的Y 2 SB 3 O 3 SBB浆料获得AY＆lt; SB＆gt; 2＆lt; SB＆gt; 3＆lt; SB＆gt; 在分散状态下的平均粒径为10-300nm。 Y SB SB 3浆料的分散介质是多元醇的衍生物。作为分散剂，含有β-二酮的浆料包括β-二酮。作为粘合剂，含有β-二酮金属络合物的Y 2 SB 3 PO 3浆料。 Y 2 SB 3浆料是具有不同体积平均粒径的分散粒径的两种或更多种浆料的混合浆料。制造薄膜的方法包括将分散状态的体积平均粒径为10-300nm的Y SB SB浆料和Y 2 O 3 密度为0.1〜40质量％，使得一次的成膜厚度可以变为10nm〜5μm，并进行100℃的热处理， 300℃，成膜10分钟-5小时。版权所有（C）2007，JPO＆INPIT

10. 发明专利

JP2007115642A Fluorescent lamp 审中-公开
标题翻译：日光灯
公开(公告)号：JP2007115642A
公开(公告)日：2007-05-10
申请号：JP2005324706
申请日：2005-11-09
申请人： Showa Denko Kk , 昭和電工株式会社
发明人： NISHIMURA NORITO , KOBAYASHI MASAKAZU , UEDA TAKASHI
IPC分类号： H01J61/35 , H01J9/20
摘要： PROBLEM TO BE SOLVED: To provide a fluorescent lamp in which consumption of mercury is suppressed and the filling quantity of mercury at manufacturing can be reduced greatly, and furthermore, deterioration in the light flux of the lamp is suppressed to realize a long lifetime, and to provide its manufacturing method.
SOLUTION: A fluorescent lamp has, on the inner face of an arc tube, a protective film containing a connected body of particles of metal oxide of which the volume average particle size is 10-300 nm and which does not form an amalgam with mercury. This fluorescent lamp has at least one kind of ultraviolet-ray absorbing film or a reflecting film, a protective film, consisting of a connected body of particles of a metal oxide of which the volume average particle size is 10-300 nm and which does not form an amalgam with mercury, and a phosphor layer formed, in this order, on the inner face of the arc tube.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种荧光灯，其中汞的消耗被抑制，并且制造中的汞的填充量可以大大降低，此外，灯的光通量的劣化被抑制以实现长时间一生，并提供其制造方法。解决方案：荧光灯在电弧管的内表面上具有包含体积平均粒径为10-300nm并且不形成汞齐的金属氧化物颗粒的连接体的保护膜用汞。该荧光灯具有至少一种紫外线吸收膜或反射膜，保护膜，其由体积平均粒径为10-300nm的金属氧化物颗粒的连接体组成，并且不形成汞的汞齐，并且依次形成在电弧管的内表面上的荧光体层。版权所有（C）2007，JPO＆INPIT

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