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1. 发明专利

JP2013051345A Diode, semiconductor device and mosfet 审中-公开
标题翻译：二极管，半导体器件和MOSFET
公开(公告)号：JP2013051345A
公开(公告)日：2013-03-14
申请号：JP2011189263
申请日：2011-08-31
申请人： Toyota Central R&D Labs Inc , 株式会社豊田中央研究所 , Toyota Motor Corp , トヨタ自動車株式会社
发明人： YAMASHITA YUUSUKE , MACHIDA SATORU , SUGIYAMA TAKAHIDE , SAITO JUN
IPC分类号： H01L29/861 , H01L27/04 , H01L29/739 , H01L29/78 , H01L29/868
摘要： PROBLEM TO BE SOLVED: To disclose a technology of enabling reduction of a switching loss in a diode to be achieved by a structure that is not likely to cause variation in quality at the time of manufacturing.SOLUTION: A diode disclosed in the present specification comprises: a cathode electrode; a cathode region composed of a first conductivity type semiconductor; a drift region composed of a low-concentration first conductivity type semiconductor; an anode region composed of a second conductivity type semiconductor; and an anode electrode. The diode comprises: a barrier region formed between the drift region and the anode region, and composed of a first conductivity type semiconductor having a concentration higher than that of the drift region; and a hetero semiconductor region formed so as to electrically connect the barrier region and the anode electrode, and composed of a semiconductor having a band gap smaller than that of the barrier region. In the diode, the hetero semiconductor region and the barrier region form a hetero junction.
摘要翻译：要解决的问题：公开一种能够通过不可能在制造时质量变化的结构来实现二极管的开关损耗降低的技术。解决方案：本说明书中公开的二极管包括：阴极电极; 由第一导电型半导体构成的阴极区域; 由低浓度第一导电型半导体构成的漂移区域; 由第二导电型半导体构成的阳极区域; 和阳极电极。二极管包括：在漂移区和阳极区之间形成的阻挡区，由比漂移区的浓度高的第一导电型半导体构成; 以及异质半导体区域，其形成为电连接所述阻挡区域和所述阳极电极，并且由具有比所述阻挡区域的带隙小的带隙的半导体构成。在二极管中，异质半导体区域和势垒区域形成异质结。版权所有（C）2013，JPO＆INPIT

2. 发明专利

JP2011165971A Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：JP2011165971A
公开(公告)日：2011-08-25
申请号：JP2010028022
申请日：2010-02-10
申请人： Toyota Central R&D Labs Inc , Toyota Motor Corp , トヨタ自動車株式会社 , 株式会社豊田中央研究所
发明人： SUGIYAMA TAKAHIDE , MACHIDA SATORU , SAITO JUN
IPC分类号： H01L29/739 , H01L29/78
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device which is suppressed with respect to reduction in the breakdown voltage. SOLUTION: The semiconductor device 100 includes a trench gate 30 and a dummy trench 24. The dummy trench 24 extends down to a position of a semiconductor layer 16, which is deeper than the trench gate 30. The semiconductor layer 16 has a body region 13, and a first semiconductor region 14, which is selectively provided on the body region 13 and is electrically connected to an emitter electrode 18. The body region 13 has a first body region 12, having a first depth D12 and a second body region 10 having a second depth D10 deeper than the first depth D12. The first body region 12 is brought into contact with the side of the trench gate 30. The second body region 10 is brought into contact with at least a part of the side of the dummy trench 24. The first semiconductor region 14 is brought into contact with the side of the trench gate 30. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种关于降低击穿电压而被抑制的半导体器件。解决方案：半导体器件100包括沟槽栅极30和虚设沟槽24.虚拟沟槽24向下延伸到比沟槽栅极30深的半导体层16的位置。半导体层16具有主体区域13和第一半导体区域14，其被选择性地设置在主体区域13上并且电连接到发射极电极18.主体区域13具有第一体区域12，具有第一深度D12和第二体区域10具有比第一深度D12更深的第二深度D10。第一体区12与沟槽栅30的一侧接触。第二体区10与虚设沟槽24的至少一部分接触。第一半导体区14接触与沟槽门30的一侧。版权所有（C）2011，JPO＆INPIT

3. 发明专利

JP2010092991A Diode 审中-公开
标题翻译：二极管
公开(公告)号：JP2010092991A
公开(公告)日：2010-04-22
申请号：JP2008259994
申请日：2008-10-06
申请人： Toyota Central R&D Labs Inc , Toyota Motor Corp , トヨタ自動車株式会社 , 株式会社豊田中央研究所
发明人： SUGIYAMA TAKAHIDE , YAMASHITA YUUSUKE , MISUMI TADASHI
IPC分类号： H01L29/861 , H01L21/322 , H01L21/329
摘要： PROBLEM TO BE SOLVED: To provide a technique for suppressing oscillation of a current or a voltage between an anode and a cathode by suppressing generation of a surge between the anode and the cathode while reducing electric power loss during reverse recovery. SOLUTION: A diode 1 includes a cathode region 20 containing an n-type impurity in high concentration, a high-resistance region 40 containing an n-type impurity in low concentration and constantly along the thickness, and an anode region 50 containing a p-type impurity. The high resistance region 40 includes a first crystal defect region D1 having a peak of a defect amount nearby an interface S1 of the anode region 50 and a second crystal defect region D2 having a peak of a defect amount nearby a thickness-directional intermediate position M. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：通过抑制反向恢复期间的电力损失，通过抑制阳极和阴极之间的浪涌的产生来提供抑制阳极和阴极之间的电流或电压的振荡的技术。解决方案：二极管1包括含有高浓度的n型杂质的阴极区域20，含有低浓度且不断沿着厚度的n型杂质的高电阻区域40和含有 p型杂质。高电阻区域40包括在阳极区域50的界面S1附近具有缺陷量的峰值的第一晶体缺陷区域D1和具有厚度方向中间位置M附近的缺陷量峰值的第二晶体缺陷区域D2 。版权所有（C）2010，JPO＆INPIT

4. 发明专利

JP2009218328A Vertical semiconductor device and its manufacturing method, and crystal-defect evaluation method of vertical semiconductor device 审中-公开
标题翻译：垂直半导体器件及其制造方法和垂直半导体器件的晶体缺陷评估方法
公开(公告)号：JP2009218328A
公开(公告)日：2009-09-24
申请号：JP2008059275
申请日：2008-03-10
申请人： Toyota Central R&D Labs Inc , Toyota Motor Corp , トヨタ自動車株式会社 , 株式会社豊田中央研究所
发明人： SUGIYAMA TAKAHIDE , SAITO MASANORI
IPC分类号： H01L29/739 , H01L21/329 , H01L21/336 , H01L29/78
摘要： PROBLEM TO BE SOLVED: To rapidly evaluate a crystal defect occurring in a manufacturing process.
SOLUTION: A vertical IGBT 10 comprises a semiconductor substrate 30, a collector electrode 40 coating the rear surface 30B of the semiconductor substrate 30, and an emitter electrode 20 coating the front surface 30U of the semiconductor substrate 30. The emitter electrode 20 has a window 50 which transmits the electron beam and the laser beam. The window 50 is arranged at a part of an area where a collector region 31 exists in the vertical direction of the main surface of the semiconductor substrate 30.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：快速评估在制造过程中发生的晶体缺陷。解决方案：垂直IGBT 10包括半导体衬底30，覆盖半导体衬底30的后表面30B的集电极40和涂覆半导体衬底30的前表面30U的发射电极20。具有透射电子束和激光束的窗口50。窗口50布置在半导体衬底30的主表面的垂直方向上存在集电区31的一部分的区域。（C）2009，JPO＆INPIT

5. 发明专利

JP2009164558A Semiconductor device and method of manufacturing the device, and method of manufacturing trench gate 审中-公开
标题翻译：半导体器件及其制造方法及其制造方法
公开(公告)号：JP2009164558A
公开(公告)日：2009-07-23
申请号：JP2008156240
申请日：2008-06-16
申请人： Toyota Central R&D Labs Inc , Toyota Motor Corp , トヨタ自動車株式会社 , 株式会社豊田中央研究所
发明人： AOI SACHIKO , SUZUKI TAKASHI , SUGIYAMA TAKAHIDE , NISHIWAKI TAKESHI , SOENO AKITAKA
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L29/7397 , H01L29/0834 , H01L29/4236 , H01L29/42364 , H01L29/66348 , H01L29/66734
摘要： PROBLEM TO BE SOLVED: To provide an IGBT of a high resistance by suppressing physically carriers from being fluctuated below a trench gate. SOLUTION: An IGBT 10 comprises an n + type emitter region 34, an n - type drift region 26, a (p) type body region 28 formed between the emitter region 34 and the drift region 26, a trench gate 40 extending in the body region 28 from the emitter region 34 toward the drift region 26, and an insulator protrusion 60. The protrusion 60 contacts the surface of the trench gate 40 at one end and protrudes at least partially into the drift region 26. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：通过抑制物理载流子在沟槽栅极下方波动来提供高电阻的IGBT。解决方案：IGBT 10包括n型SP +型SPD型发射极区域34，n型SP +型SPD型漂移区域26，发射极区域34和漂移区域26，在主体区域28中从发射极区域34延伸到漂移区域26的沟槽栅极40以及绝缘体突出部60.突起60在一端接触沟槽栅极40的表面并且至少部分地突出到漂移区域26中。（C）2009，JPO和INPIT

6. 发明专利

JP2008305859A Carrier lifetime measuring method 审中-公开
标题翻译：载体寿命测量方法
公开(公告)号：JP2008305859A
公开(公告)日：2008-12-18
申请号：JP2007149599
申请日：2007-06-05
申请人： Toyota Central R&D Labs Inc , Toyota Motor Corp , トヨタ自動車株式会社 , 株式会社豊田中央研究所
发明人： SAITO MASANORI , SUGIYAMA TAKAHIDE
IPC分类号： H01L21/66
摘要： PROBLEM TO BE SOLVED: To provide a technology for measuring the carrier lifetime of the local area of the surface of a semiconductor layer.
SOLUTION: The measuring method comprises a step of bringing a pair of electrodes into contact with the surface of a semiconductor layer, a resistance value measuring step of repeatedly measuring a resistance between the pair of electrodes, an excitation light irradiation step of starting the irradiation of the surface of the semiconductor layer between the pair of electrodes at least with laser light 40 and stopping the irradiation in the middle of the resistance value measuring step, and a step of specifying the carrier lifetime of the semiconductor layer by measuring a time τ required for incerasing a resistance value measured at the excitation light irradiation stop timing to r1-(r1-r2)/e when a resistance value measured before start of irradiation with the laser light 40 is set to r1 and a resistance value measured in a period in which the resistance value which decreases and becomes stable after start of irradiation with the laser light 40 is set to r2.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于测量半导体层表面的局部区域的载流子寿命的技术。解决方案：测量方法包括使一对电极与半导体层的表面接触的步骤，重复测量该对电极之间的电阻的电阻值测量步骤，启动的激发光照射步骤至少用激光40照射一对电极之间的半导体层的表面，并且在电阻值测量步骤的中间停止照射，以及通过测量时间来确定半导体层的载流子寿命的步骤当将激光40照射开始前测量的电阻值设定为r1时，激发光照射停止时刻测得的电阻值r1（r1-r2）/ e，在激光40照射开始后降低并变得稳定的电阻值的周期被设定为r2。版权所有（C）2009，JPO＆INPIT

7. 发明专利

JP2008218812A Igbt 有权
标题翻译： IGBT
公开(公告)号：JP2008218812A
公开(公告)日：2008-09-18
申请号：JP2007055917
申请日：2007-03-06
申请人： Toyota Central R&D Labs Inc , Toyota Motor Corp , トヨタ自動車株式会社 , 株式会社豊田中央研究所
发明人： SUGIYAMA TAKAHIDE , KAMEYAMA SATORU
IPC分类号： H01L29/739 , H01L29/78
摘要： PROBLEM TO BE SOLVED: To provide an IGBT in which the switching time from a current on state to a current off state can be shortened by suppressing appearance of a negative resistance component under current on state. SOLUTION: A conductor region 16 penetrating a p-type collector layer 12 and intruding into an n-type base layer 10 is formed on the backside of an IGBT 100. The conductor region 16 is formed in a range not opposing a p-type body region 24. Appearance of a negative resistance component under current on state is thereby suppressed and residual carriers are discharged efficiently to a collector electrode 14 via the conductor region 16 at turning-off. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：解决的问题：为了提供一种IGBT，其中通过在电流导通状态下抑制负电阻分量的外观，可以缩短从电流导通状态到断电状态的切换时间。解决方案：在IGBT 100的背面形成有贯穿p型集电极层12并侵入n型基极层10的导体区域16.导体区域16形成在与p型集电极层12不相对的范围内由此抑制导通状态下的负电阻成分的外观，并且在关断时通过导体区域16将残留载流子有效地排出到集电极14。版权所有（C）2008，JPO＆INPIT

8. 发明专利

JP2014135410A Cooling type switching element module 有权
标题翻译：冷却式开关元件模块
公开(公告)号：JP2014135410A
公开(公告)日：2014-07-24
申请号：JP2013003121
申请日：2013-01-11
申请人： Toyota Central R&D Labs Inc , 株式会社豊田中央研究所 , Toyota Motor Corp , トヨタ自動車株式会社
发明人： OSADA YUJI , USUI MASANORI , SUGIYAMA TAKAHIDE , SHOJI TOMOYUKI , HIROSE SATOSHI , IMAI MAKOTO , ORIMOTO NORIMUNE
IPC分类号： H01L23/473 , H01L25/07 , H01L25/18 , H02M7/48 , H05K7/20
CPC分类号： H05K7/20927 , H01L24/34 , H01L24/37 , H01L24/40 , H01L2224/371 , H01L2224/37599 , H01L2224/40137 , H01L2924/1305 , H01L2924/13055 , H01L2924/181 , H01L2924/00 , H01L2924/00014
摘要： PROBLEM TO BE SOLVED: To improve cooling performance and electrical performance and achieve downsizing in a switching element module having a cooling function.SOLUTION: A cooling type switching element module 1 includes: an outer conductor cylinder 24; an inner conductor cylinder 26 which transmits electric power with the outer conductor cylinder 24; first switching elements (32U, 32V, 32W); and second switching elements (36U, 36V, 36W). The inner conductor cylinder 26 has a protruding portion which protrudes from an opening of the outer conductor cylinder 24. The first switching elements are provided on an outer surface of the outer conductor cylinder 24 and the second switching elements are provided on an outer surface of the protruding portion. A refrigerant circulates at the inner side of the inner conductor cylinder 26 and the outer side of the outer conductor cylinder 24. The first switching elements and the second switching elements are cooled from both sides by the refrigerant circulating at the inner side of the inner conductor cylinder 26 and the refrigerant circulating at the outer side of the outer conductor cylinder 24.
摘要翻译：要解决的问题：提高冷却性能和电气性能，并实现具有冷却功能的开关元件模块的小型化。解决方案：冷却型开关元件模块1包括：外导体筒24; 与外部导体筒24发送电力的内部导体筒26; 第一开关元件（32U，32V，32W）; 和第二开关元件（36U，36V，36W）。内导体筒26具有从外导体筒24的开口突出的突出部。第一开关元件设置在外导体筒24的外表面上，第二开关元件设置在外导体筒24的外表面上。突出部分。制冷剂在内导体筒26的内侧和外导体筒24的外侧循环。第一开关元件和第二开关元件由内侧导体的内侧循环的制冷剂从两侧冷却气缸26和在外导体筒24的外侧循环的制冷剂。

9. 发明专利

JP2013222798A Diode, semiconductor device and mosfet 有权
标题翻译：二极管，半导体器件和MOSFET
公开(公告)号：JP2013222798A
公开(公告)日：2013-10-28
申请号：JP2012092992
申请日：2012-04-16
申请人： Toyota Central R&D Labs Inc , 株式会社豊田中央研究所 , Toyota Motor Corp , トヨタ自動車株式会社
发明人： MACHIDA SATORU , YAMASHITA YUUSUKE , SUGIYAMA TAKAHIDE , SAITO JUN
IPC分类号： H01L29/861 , H01L21/8234 , H01L27/04 , H01L27/06 , H01L27/088 , H01L29/423 , H01L29/47 , H01L29/49 , H01L29/739 , H01L29/78 , H01L29/868 , H01L29/872
摘要： PROBLEM TO BE SOLVED: To provide technology for raising proof pressure to reverse bias and reducing leak current in a diode in which a drift area is connected to an anode electrode via a Schott-key junction interface formed separately from an interface interposed between an anode area and the anode electrode.SOLUTION: A diode includes: a cathode electrode; a cathode area consisting of a first conductivity type semiconductor; a drift area consisting of a first conductivity type semiconductor with low concentration; an anode area consisting of a second conductivity type semiconductor; and an anode electrode. In the diode, the drift area is connected to the anode electrode via a Schott-key junction interface formed separately from an interface interposed between the anode area and the anode electrode. In the diode, the Schott-key junction interface projects more to the anode electrode side than the interface interposed between the anode area and the anode electrode.
摘要翻译：要解决的问题：提供用于提高反向偏压的抗压力的技术，并且通过与插入在阳极区域之间的界面分开形成的肖特基结结界面将漂移区域连接到阳极电极的二极管中的漏电流减小的技术和阳极电极。解决方案：二极管包括：阴极电极; 由第一导电型半导体构成的阴极区域; 由低浓度的第一导电型半导体组成的漂移区; 由第二导电型半导体构成的阳极区; 和阳极电极。在二极管中，漂移区域通过与介于阳极区域和阳极电极之间的界面分开形成的Schott-键结界面连接到阳极电极。在二极管中，Schott-key结界面比阳极区域和阳极电极之间的界面投射更多的阳极电极侧。

10. 发明专利

JP2013080796A Semiconductor device 审中-公开
标题翻译：半导体器件
公开(公告)号：JP2013080796A
公开(公告)日：2013-05-02
申请号：JP2011219553
申请日：2011-10-03
申请人： Toyota Central R&D Labs Inc , 株式会社豊田中央研究所 , Toyota Motor Corp , トヨタ自動車株式会社 , Denso Corp , 株式会社デンソー
发明人： AOI SACHIKO , SUGIYAMA TAKAHIDE , KAMEYAMA SATORU , KIMURA KEISUKE , KOYAMA MASAKI , OKURA YASUTSUGU
IPC分类号： H01L27/04 , H01L21/8234 , H01L27/06 , H01L27/088 , H01L29/739 , H01L29/78
摘要： PROBLEM TO BE SOLVED: To provide a technique that prevents operation of a parasitic diode in a semiconductor device in which an IGBT region and a diode region are mixed in a semiconductor layer.SOLUTION: A semiconductor device 100 includes a semiconductor layer 15 that is partitioned into an element area and a termination area surrounding the element area. In the element area, an IGBT region 10 and a diode region 12 are formed. A rear surface portion of the semiconductor layer 15 in the diode region 12 has cathode portions 38a in which n-type cathode regions are formed and non-cathode portions 38b in which the n-type cathode regions are not formed. In the semiconductor device 100, the non-cathode portions 38b relatively abound at an end-portion side compared to at the center side of the diode region 12.
摘要翻译：解决的问题：提供一种在半导体层中混合有IGBT区域和二极管区域的半导体装置中的寄生二极管的动作的技术。解决方案：半导体器件100包括被划分为元件区域的半导体层15和围绕元件区域的端接区域。在元件区域中，形成IGBT区域10和二极管区域12。二极管区域12中的半导体层15的背面部分具有形成n型阴极区域的阴极部分38a和不形成n型阴极区域的非阴极部分38b。在半导体器件100中，与二极管区域12的中心侧相比，非阴极部分38b在端部侧相对比较大。（C）2013，JPO＆INPIT

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