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1. 发明专利

JP2013152996A Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：JP2013152996A
公开(公告)日：2013-08-08
申请号：JP2012011935
申请日：2012-01-24
申请人： Toyota Motor Corp , トヨタ自動車株式会社 , Denso Corp , 株式会社デンソー , Toyota Central R&D Labs Inc , 株式会社豊田中央研究所
发明人： KIMURA KEISUKE , KAMEYAMA SATORU , KOYAMA MASAKI , AOI SACHIKO
IPC分类号： H01L27/04 , H01L21/8234 , H01L27/06 , H01L27/088 , H01L29/739 , H01L29/78
CPC分类号： H01L27/0664 , H01L29/0646 , H01L29/0834 , H01L29/407 , H01L29/7395 , H01L29/7397 , H01L29/861
摘要： PROBLEM TO BE SOLVED: To provide a technology for suppressing a snapback phenomenon.SOLUTION: In a plan view of a semiconductor substrate of a semiconductor device, an isolation region, an IGBT region, and a diode region that are adjacent to each other are formed. In the isolation region, a p-type deep region connected to a body region and an anode region is formed. In the semiconductor substrate, an n-type drift region is formed over the isolation region, the IGBT region, and the diode region. In a region exposed on a lower surface of the semiconductor substrate, a p-type collector region extending over the isolation region, the IGBT region, and the diode region, and an n-type cathode region located in the diode region are formed. In a cross section crossing a boundary between the isolation region and the diode region and separating the isolation region from the diode region, a boundary between the collector region and the cathode region exists in the diode region.
摘要翻译：要解决的问题：提供抑制回弹现象的技术。解决方案：在半导体器件的半导体衬底的平面图中，形成彼此相邻的隔离区域，IGBT区域和二极管区域。在隔离区域中，形成连接到体区和阳极区的p型深区。在半导体衬底中，在隔离区域，IGBT区域和二极管区域上形成n型漂移区域。在暴露在半导体衬底的下表面上的区域中，形成了在隔离区域上延伸的p型集电极区域，IGBT区域和二极管区域以及位于二极管区域中的n型阴极区域。在跨越隔离区域和二极管区域之间的边界并将隔离区域与二极管区域分开的横截面中，在二极管区域中存在集电极区域和阴极区域之间的边界。

2. 发明专利

JP2013080796A Semiconductor device 审中-公开
标题翻译：半导体器件
公开(公告)号：JP2013080796A
公开(公告)日：2013-05-02
申请号：JP2011219553
申请日：2011-10-03
申请人： Toyota Central R&D Labs Inc , 株式会社豊田中央研究所 , Toyota Motor Corp , トヨタ自動車株式会社 , Denso Corp , 株式会社デンソー
发明人： AOI SACHIKO , SUGIYAMA TAKAHIDE , KAMEYAMA SATORU , KIMURA KEISUKE , KOYAMA MASAKI , OKURA YASUTSUGU
IPC分类号： H01L27/04 , H01L21/8234 , H01L27/06 , H01L27/088 , H01L29/739 , H01L29/78
摘要： PROBLEM TO BE SOLVED: To provide a technique that prevents operation of a parasitic diode in a semiconductor device in which an IGBT region and a diode region are mixed in a semiconductor layer.SOLUTION: A semiconductor device 100 includes a semiconductor layer 15 that is partitioned into an element area and a termination area surrounding the element area. In the element area, an IGBT region 10 and a diode region 12 are formed. A rear surface portion of the semiconductor layer 15 in the diode region 12 has cathode portions 38a in which n-type cathode regions are formed and non-cathode portions 38b in which the n-type cathode regions are not formed. In the semiconductor device 100, the non-cathode portions 38b relatively abound at an end-portion side compared to at the center side of the diode region 12.
摘要翻译：解决的问题：提供一种在半导体层中混合有IGBT区域和二极管区域的半导体装置中的寄生二极管的动作的技术。解决方案：半导体器件100包括被划分为元件区域的半导体层15和围绕元件区域的端接区域。在元件区域中，形成IGBT区域10和二极管区域12。二极管区域12中的半导体层15的背面部分具有形成n型阴极区域的阴极部分38a和不形成n型阴极区域的非阴极部分38b。在半导体器件100中，与二极管区域12的中心侧相比，非阴极部分38b在端部侧相对比较大。（C）2013，JPO＆INPIT

3. 发明专利

JP2010278164A Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：JP2010278164A
公开(公告)日：2010-12-09
申请号：JP2009128306
申请日：2009-05-27
申请人： Toyota Motor Corp , トヨタ自動車株式会社
发明人： KIMURA KEISUKE
IPC分类号： H01L21/28 , H01L21/3205 , H01L21/336 , H01L21/60 , H01L23/52 , H01L25/07 , H01L25/18 , H01L29/417 , H01L29/739 , H01L29/78
CPC分类号： H01L24/33 , H01L2924/01322 , H01L2924/13055 , H01L2924/181 , H01L2924/00 , H01L2924/00012
摘要： PROBLEM TO BE SOLVED: To prevent the occurrence of warpage of a wafer and cracks of a solder bonding layer, in a manufacturing process of a semiconductor device which has a solder bonding layer in a surface electrode.
SOLUTION: The surface electrode is manufactured by forming an Al-Si layer or an Al-Si-Cu layer by sputtering method at the substrate temperature of ≤250°C as a first layer which is in contact with a semiconductor substrate, forming an Al layer or an Al-Cu layer by sputtering method at the substrate temperature of ≥400°C as a second layer which is laminated in a surface of the first layer, and forming the solder bonding layer and a solder layer in the surface side. Since the first layer is formed at substrate temperature of ≤250°C, the occurrence of a silicon nodule can be prevented. Since the second layer is formed at substrate temperature of ≥400°C, the flatness of the second layer can be secured, and the occurrence of warpage of the wafer and cracks of the solder bonding layer can be prevented.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：为了防止在表面电极中具有焊料接合层的半导体器件的制造工艺中发生晶片的翘曲和焊料接合层的裂纹。解决方案：通过溅射法在≤250℃的衬底温度下形成Al-Si层或Al-Si-Cu层作为与半导体衬底接触的第一层来制造表面电极，通过溅射法在≥400℃的基板温度下形成Al层或Al-Cu层作为层叠在第一层的表面上的第二层，并且在该表面中形成焊料接合层和焊料层侧。由于在衬底温度≤250℃下形成第一层，所以可以防止发生硅结核。由于第二层是在400℃以上的基板温度下形成的，因此可以确保第二层的平坦度，并且可以防止晶片的翘曲发生和焊料接合层的裂纹的发生。版权所有（C）2011，JPO＆INPIT

4. 发明专利

JP2011108751A Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：JP2011108751A
公开(公告)日：2011-06-02
申请号：JP2009260267
申请日：2009-11-13
申请人： Toyota Motor Corp , トヨタ自動車株式会社
发明人： KIMURA KEISUKE
IPC分类号： H01L27/04 , H01L21/822 , H01L21/8234 , H01L27/06 , H01L29/739 , H01L29/78 , H01L29/861
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device including a temperature sensing element capable of ensuring a superior temperature followability. SOLUTION: The semiconductor device 12 includes: a semiconductor substrate 13 forming active regions 4a, 4b and 4c and inactive regions 2a and 2b; a temperature sensing diode 10 formed to the upper parts of the inactive regions 2a and 2b in the upper part of the semiconductor substrate 13; and emitter electrodes 8a, 8b and 8c formed to the surfaces of the active regions 4a, 4b and 4c. The temperature sensing diode 10 is formed within a height range including a part in the height range of the emitter electrode 8b, and includes: a P-type anode region 18; and an N-type cathode region 16. The anode region 18 surrounds part of the active region 4b, the cathode region 16 is brought into contact with the outer periphery of the anode region 18 and the outer periphery of the cathode region 16 is surrounded by the active region 4b in a plan view in the semiconductor substrate 13. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种包括温度检测元件的半导体器件，其能够确保优异的温度跟随性。解决方案：半导体器件12包括：形成有源区域4a，4b和4c以及无效区域2a和2b的半导体衬底13; 形成在半导体衬底13的上部中的非活性区域2a和2b的上部的温度感测二极管10; 以及形成在有源区域4a，4b和4c的表面上的发射电极8a，8b和8c。温度检测二极管10形成在包括发射电极8b的高度范围内的一部分的高度范围内，并且包括：P型阳极区域18; 和N型阴极区16.阳极区域18包围有源区域4b的一部分，阴极区域16与阳极区域18的外周接触，阴极区域16的外周围被活性区域4b在半导体衬底13的平面图中。版权所有：（C）2011，JPO＆INPIT

5. 发明专利

JP2012156398A Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：JP2012156398A
公开(公告)日：2012-08-16
申请号：JP2011015747
申请日：2011-01-27
申请人： Toyota Motor Corp , トヨタ自動車株式会社
发明人： KIMURA KEISUKE
IPC分类号： H01L29/868 , G01K7/01 , H01L21/822 , H01L27/04 , H01L29/78 , H01L29/861
摘要： PROBLEM TO BE SOLVED: To shorten the time in which a temperature detection element detects heat generation of a semiconductor element, in a semiconductor device having the temperature detection element.SOLUTION: A semiconductor device comprises a temperature detection element having a P-type region and an N-type region. The P-type region of the temperature detection element has a P-type contact portion and a P-type junction portion extending in a first direction from the P-type contact portion, and the N-type region has an N-type contact portion and an N-type junction portion that extends along from the N-type contact portion to the P-type junction portion in the opposite direction to the first direction and is joined to the P-type junction portion. The width in the second direction perpendicular to the first direction of the P-type junction portion is narrower than the width in the second direction of the P-type contact portion, and the width in the second direction of the N-type junction portion is narrower than that of the N-type contact portion.
摘要翻译：要解决的问题：在具有温度检测元件的半导体器件中，缩短温度检测元件检测半导体元件的发热的时间。解决方案：半导体器件包括具有P型区域和N型区域的温度检测元件。温度检测元件的P型区域具有从P型接触部分沿第一方向延伸的P型接触部分和P型接合部分，并且N型区域具有N型接触部分以及N型接合部，其与第一方向相反的方向从N型接触部向P型接合部延伸，并且与P型接合部接合。与P型接合部的第一方向垂直的第二方向的宽度比P型接触部的第二方向的宽度窄，N型接合部的第二方向的宽度为比N型接触部分窄。版权所有（C）2012，JPO＆INPIT

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