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1. 发明专利

JP2000077296A Electron beam writing method 有权
标题翻译：电子束写法
公开(公告)号：JP2000077296A
公开(公告)日：2000-03-14
申请号：JP24336698
申请日：1998-08-28
申请人： Toshiba Corp , Toshiba Mach Co Ltd , 東芝機械株式会社 , 株式会社東芝
发明人： OGASAWARA MUNEHIRO , KAMIKUBO TAKASHI , SHIMIZU MITSUKO , OKI SUSUMU , YASUSE HIROTO , HIGURE HITOSHI , ABE TAKAYUKI , TAKAMATSU JUN , SUNAOSHI HITOSHI , SHIMOMURA NAOHARU , HATTORI YOSHIAKI , IIJIMA TOMOHIRO , SAITO TAKASHI
IPC分类号： G03F7/20 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To obtain a highly accurate pattern. SOLUTION: This method comprises a step of obtaining an irradiation quantity density distribution ρ (X,Y) per unit irradiation quantity, due to the long distance photosensitive action at a point in a wiring region of a sample, when an electron beam of a unit radiation quantity is irradiated on a point Y in the writing region, a step of dividing the writing region of the sample coated with a resist to which a pattern is written into n (>=2) small regions i (1
摘要翻译：要解决的问题：获得高精度图案。解决方案：该方法包括在单位电子束中由于在样品的布线区域中的点处的长距离感光作用而获得每单位照射量的照射量密度分布ρ（X，Y）的步骤辐射量照射在写入区域中的点Y上，将涂布有图案的抗蚀剂的样品的写入区域划分成n（> = 2）小区域i（1 <= i < n），基于要写入的图案获得每个小区域i上的照射量Di的步骤，基于照射量由于长距离光敏作用而获得每个小区域i上的照射量密度Fi的步骤密度分布ρ（X，Y）和照射量Di，在各个区域获得基于每个照射量密度Fi的长距离感光作用的影响的对应区域的照射量密度Ci的步骤小区域i以及用电子束照射的相应的小区域以提供被照射的照射量密度Ci的步骤。对于每个小区域我

2. 发明专利

JP2003318077A Charged beam delineating method and delineating device 有权
标题翻译：充电光束分割方法和分类装置
公开(公告)号：JP2003318077A
公开(公告)日：2003-11-07
申请号：JP2003157150
申请日：2003-06-02
申请人： Toshiba Corp , 株式会社東芝
发明人： ABE TAKAYUKI , OKI SUSUMU , KAMIKUBO TAKASHI , YASUSE HIROTO
IPC分类号： H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide practical accuracy which is accurate and very near to a matrix method, at a computation speed of order at the same degree as a method of an approximate solution.
SOLUTION: In an electron beam delineating method, prior to delineating a desired pattern by radiating the electron beam on a sample, an optimum amount of irradiation is acquired in each location in the pattern to be delineated, to delineate each pattern in this optimum amount of irradiation. An approximate optimum amount of irradiation for the sample is acquired (A), an error of an amount of exposure occurred at an exposure in an approximate optimum amount of irradiation (x, y) acquired up to the preceding step is multiplied by an adjustment coefficient containing an amount of exposure U (x, y) by backward scattering electrons varying locally, and the resultant is set as an amount of correction (di) for the approximate optimum amount of irradiation, and a new approximate optimum amount of irradiation is obtained by adding to the above approximate optimum amount of irradiation (B), and the step (B) is repeated until the approximate optimum amount of irradiation converges (C).
COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：为了提供准确和非常接近矩阵方法的实际精度，以与近似解的方法相同的程度的计算速度。解决方案：在电子束描绘方法中，在通过在样品上辐射电子束来描绘期望图案之前，在要描绘的图案中的每个位置获得最佳照射量，以描绘该图案中的每个图案最佳照射量。获取样本的近似最佳照射量（A），将在前一步骤中获取的近似最佳照射量（x，y）的曝光发生的曝光量的误差乘以调整系数通过反向散射电子局部变化而含有曝光量U（x，y），并将其作为近似最佳照射量的校正量（di）设定，并且通过以下方式获得新的近似最佳照射量：加入上述近似最佳照射量（B），重复步骤（B）直到近似最佳照射量收敛（C）。版权所有（C）2004，JPO

3. 发明专利

JP2008177604A Electron beam drawing system and control method thereof 有权
公开(公告)号：JP2008177604A
公开(公告)日：2008-07-31
申请号：JP2008095027
申请日：2008-04-01
申请人： Toshiba Corp , 株式会社東芝
发明人： SHIMIZU MITSUKO , ABE TAKAYUKI , YASUSE HIROTO , OKI SUSUMU , KAMIKUBO TAKASHI , MURAKAMI EIJI , HATTORI YOSHIAKI , IIJIMA TOMOHIRO , HIGURE HITOSHI , MATSUKI KAZUTO
IPC分类号： H01L21/027 , H01J37/305
摘要： PROBLEM TO BE SOLVED: To diagnose the presence or absence of abnormality, such as a correction calculation error in proximity effect, and to locate an abnormal place easily. SOLUTION: An electron beam drawing system 60 comprises: an electron beam drawing means 2 for drawing a desired graphic pattern by irradiating the surface of a substrate with electron beams; a means 40 for computing a correction dosage for calculating a correction dosage for each small region in a drawing region, where the influence of the proximity effect is considered and the dosage of electron beams corresponding to the drawing graphic pattern is corrected; a control means 37 for calculating the amount of energy stored in the substrate when the electron beams having the corrected dosage are applied, calculating an error by comparing the amount of energy with a prescribed theoretical value, and determining precision in the operation of the means 40 for computing the correction dosage; a display means 67; and a data verification support means 61 for allowing the display means 67 to display information, where the corrected dosage is layered visibly, for each small region. COPYRIGHT: (C)2008,JPO&INPIT

4. 发明专利

JP2008177603A Electron beam drawing system and control method thereof 有权
标题翻译：电子束绘图系统及其控制方法
公开(公告)号：JP2008177603A
公开(公告)日：2008-07-31
申请号：JP2008094997
申请日：2008-04-01
申请人： Toshiba Corp , 株式会社東芝
发明人： SHIMIZU MITSUKO , ABE TAKAYUKI , YASUSE HIROTO , OKI SUSUMU , KAMIKUBO TAKASHI , MURAKAMI EIJI , HATTORI YOSHIAKI , IIJIMA TOMOHIRO , HIGURE HITOSHI , MATSUKI KAZUTO
IPC分类号： H01L21/027 , H01J37/30 , H01J37/305
摘要： PROBLEM TO BE SOLVED: To diagnose the presence or absence of abnormality, such as a correction calculation error in proximity effect, and to locate an abnormal place easily. SOLUTION: An electron beam drawing system 60 comprises: an electron beam drawing means 2 for drawing a desired graphic pattern by irradiating the surface of a substrate with electron beams; a means 40 for computing a correction dosage for calculating a correction dosage for each small region in a drawing region, where the influence of the proximity effect is considered and the dosage of electron beams corresponding to the drawing graphic pattern is corrected; a control means 37 for calculating the amount of energy stored in the substrate when the electron beams having the corrected dosage are applied, calculating an error by comparing the amount of energy with a prescribed theoretical value, and determining precision in the operation of the means 40 for computing the correction dosage; a display means 67; and a data verification support means 61 for allowing the display means 67 to display information, where the corrected dosage is layered visibly, for each small region. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：诊断异常的存在或不存在，例如邻近效应中的校正计算误差，并且容易地定位异常位置。解决方案：电子束描绘系统60包括：电子束描绘装置2，用于通过用电子束照射衬底的表面来绘制所需的图形图案; 用于计算用于计算绘图区域中每个小区域的校正剂量的校正剂量的装置40，其中考虑到邻近效应的影响，并且校正与绘图图形相对应的电子束的剂量; 控制装置37，用于当应用具有校正剂量的电子束时，计算存储在基板中的能量的量，通过将能量与规定的理论值进行比较来计算误差，以及确定装置40的操作精度用于计算校正剂量; 显示装置67; 以及数据验证支持装置61，用于允许显示装置67针对每个小区域显示校正剂量被明显分层的信息。版权所有（C）2008，JPO＆INPIT

5. 发明专利

JPH11238671A ELECTRON BEAM LITHOGRAPHY EQUIPMENT 失效
公开(公告)号：JPH11238671A
公开(公告)日：1999-08-31
申请号：JP3897798
申请日：1998-02-20
申请人： TOSHIBA CORP , TOSHIBA MACHINE CO LTD
发明人： KAMIKUBO TAKASHI , ABE TAKAYUKI , YASUSE HIROTO , FUKUTOME YUJI , SHIMIZU MITSUKO , OKI SUSUMU , HATTORI YOSHIAKI , IIJIMA TOMOHIRO
IPC分类号： G03F7/20 , H01J37/305 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To control the electron beam dose and time of electron beam lithography equipment in fine control units by constituting the delay circuit section of a blanking control circuit of a plurality of delay circuits, having equal minimum delay time pitches with respect to control data and different delay time with respect to the same control data. SOLUTION: A blanking control circuit which controls a blanking deflector is constituted of two delay circuits 51 and 52, having the equal minimum delay time pitch against inputted electron beam dose data and choosable delay time which are shifted from each other by half a phase. A selection circuit 50 with table sends the electron beam dose data to each delay circuits 51 and 52 as delay time data based on its table and selects closet values for obtaining target electron beam doses. As a result, the blanking time and electron beam dose of electron beam lithography equipment can be changed at 1/2 the unit control time.

6. 发明专利

JPH1131658A METHOD AND DEVICE FOR CORRECTING PROXIMITY EFFECT 失效
公开(公告)号：JPH1131658A
公开(公告)日：1999-02-02
申请号：JP34935697
申请日：1997-12-18
申请人： TOSHIBA CORP
发明人： SHIMIZU MITSUKO , ABE TAKAYUKI , HATTORI YOSHIAKI , IIJIMA TOMOHIRO , OKI SUSUMU , KAMIKUBO TAKASHI , YASUSE HIROTO
IPC分类号： G03F7/20 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To calculate the effects of the rear scattering in a short time by calculating in advance a contribution exerted on a correction calculation by a typical pattern and blocking it by the area of the pattern and preparing a table for each block, in which the amount of effect is described at each position of the contour of the pattern and correcting the amount of irradiation at each position with reference to the table. SOLUTION: The amount of rear scattering exerted on each amount of irradiation by a typical pattern per a given area is calculated and is arranged according to the area of the typical pattern for making a table. When a typical pattern A is taken, if a table value is taken out based on the area and is applied to the mesh of the amount of irradiation with the center of the typical pattern A shaped like a mesh aligned with the center of the coordinates of the table value, the values Ua1 -Ua9 for the amounts of back scattering per a given area exerted on each mesh of the amount of irradiation by a typical pattern A are arranged. Similarly, the amounts of back scattering of the typical patterns A, B are arranged by taking out and summing the effects Ub1 -Ub7 of areas of the typical pattern B. The amounts of correction of irradiation per each irradiation mesh are calculated from the obtained amounts of back scattering to write the pattern.

7. 发明专利

JP2000269128A PATTERN DRAWING METHOD AND DRAWING APPARATUS 失效
公开(公告)号：JP2000269128A
公开(公告)日：2000-09-29
申请号：JP7658599
申请日：1999-03-19
申请人： TOSHIBA CORP
发明人： ABE TAKAYUKI , INOUE HIDEO , IIJIMA TOMOHIRO , HATTORI YOSHIAKI , YASUSE HIROTO , OKI SUSUMU , SHIMIZU MITSUKO , KAMIKUBO TAKASHI , SAITO TAKASHI , NAKAYAMADA KENSHO , TOJO TORU
IPC分类号： H01L21/027 , G03F7/20 , H01J37/317
摘要： PROBLEM TO BE SOLVED: To improve drawing accuracy by enabling high-accuracy proximity corrections, even if there are repetitions of a pattern and the pitch differs slightly from the size of each subregion. SOLUTION: In this pattern drawing method, a region in which a pattern is to be drawn, is divided into subregions, and the area of the pattern component in each subregion is found and optimum irradiance is calculated, then the pattern is drawn based on the optimum irradiance. Calculation of the pattern area in each subregion is performed twice. At the second calculation, the coordinates are shifted by half a subregion, and the pattern component areas in each subregion obtained at first and second calculations are added, and the summed total area is divided by 2 for obtaining the backward scattered amount, then the optimum irradiated dose is determined based on the backward scattered amount.

8. 发明专利

JPH10261562A PROXIMITY EFFECT CORRECTION DEVICE FOR CHARGED PARTICLE BEAM LITHOGRAPHY 失效
公开(公告)号：JPH10261562A
公开(公告)日：1998-09-29
申请号：JP6453097
申请日：1997-03-18
申请人： TOSHIBA CORP , TOSHIBA MACHINE CO LTD
发明人： HATTORI YOSHIAKI , IIJIMA TOMOHIRO , TSURUMAKI HIDEYUKI , ABE TAKAYUKI , OKI SUSUMU , SHIMIZU MITSUKO , KAMIKUBO TAKASHI , TOJO TORU , YOSHIKAWA RYOICHI , KATAYAMA MITSUNOBU
IPC分类号： G03F7/20 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To speedily and accurately perform a proximity effect correction in an accurate electron beam lithography device. SOLUTION: A proximity effect correction device has a circuit 112 for calculating the radiation dose at a small lattice region on a target surface a scattering influence evaluation circuit 123 for evaluating the irradiation influence due to the scattering of the radiation dose obtained by the circuit 112, and a correction irradiation intensity leading circuit 131 for calculating the proper correction irradiation intensity of electron beams from the result of the circuit 123 for each lattice region. Then, the circuit 123 obtains the convolution calculation according to the product of the radiation dose at a peripheral lattice region obtained by the circuit 112 and a Gauss distribution functions the sum of a result that is calculated by weighting three Gauss distributions by a scattering rate and performs a convolution calculation using a one-dimensional Gauss distribution function for horizontal direction in each convolution calculation, and performs the convolution calculation for a vertical direction based on the convolution calculation result in horizontal direction.

9. 发明专利

JPH09260241A FORMING METHOD OF APERTURE, MOLD FOR APERTURE FORMING AND ITS MANUFACTURE 失效
公开(公告)号：JPH09260241A
公开(公告)日：1997-10-03
申请号：JP6137896
申请日：1996-03-18
申请人： TOSHIBA CORP
发明人： TAKAMATSU JUN , OGASAWARA MUNEHIRO , OTOSHI KENJI , KOIKE TORU , OKI SUSUMU , KATO YOSHIMITSU , TAKIGAWA TADAHIRO
IPC分类号： C25D1/20 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a more precise forming method of an aperture, an LSI manufacturing equipment on which the aperture is mounted, a mold for manufacturing the aperture, and a manufacturing method of the mold. SOLUTION: On a board 11, a resist mold 13 is formed on a plating substratum 12. Regarding an island shaped pattern (mold pattern) 14 of the mold side which corresponds to a side wall of an aperture forming part, a telescopic pattern (dummy pattern) 15 having a side wall in the inside is installed. The resist mold 13 is used, and an Au thin film 16 is formed by a plating method. Thereby the stresses of the plating film are canceled on the outside and the inside, the effect of the stresses is relieved, and dimentional precision at the time of finishing the aperture is improved. A mold for forming the aperture or the aperture is worked for correction by using sputter function due to a convergent ion beam or beam assist film formation. An aperture of high precision is mounted on an LSI manufacturing equipment.

10. 发明专利

JP2002124454A DRAWING DEVICE AND METHOD OF CHARGED PARTICLE BEAM 失效
公开(公告)号：JP2002124454A
公开(公告)日：2002-04-26
申请号：JP2000316747
申请日：2000-10-17
申请人： TOSHIBA CORP
发明人： OKI SUSUMU , ABE TAKAYUKI , ISHIMURA TAKIJI , HATTORI YOSHIAKI , IIJIMA TOMOHIRO
IPC分类号： G03F7/20 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To reduce total processing time by sorting by reducing the unneeded time in the sorting of the drawing order of semiconductor patterns. SOLUTION: An electron beam drawing device in a variable formation beam system comprises a shot data generation circuit section 40 for generating shot data where a figure to be drawn is divided for each sub field, a recording section 43 having different recording memories 43a-43e for each shot shape, a final shot data-processing circuit section 41 for deleting an information code for indicating the final shot data in the sub field and adding break data for indicating a break in the sub field for each shot shape, and a memory control circuit section 42 for writing the shot data and break data for each shot shape into corresponding recording memories and reading data in the recording memories for each shot shape in order, thus drawing a pattern in the order of read shots for each shot shape.

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