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1. 发明专利

JPH10261562A PROXIMITY EFFECT CORRECTION DEVICE FOR CHARGED PARTICLE BEAM LITHOGRAPHY 失效
公开(公告)号：JPH10261562A
公开(公告)日：1998-09-29
申请号：JP6453097
申请日：1997-03-18
申请人： TOSHIBA CORP , TOSHIBA MACHINE CO LTD
发明人： HATTORI YOSHIAKI , IIJIMA TOMOHIRO , TSURUMAKI HIDEYUKI , ABE TAKAYUKI , OKI SUSUMU , SHIMIZU MITSUKO , KAMIKUBO TAKASHI , TOJO TORU , YOSHIKAWA RYOICHI , KATAYAMA MITSUNOBU
IPC分类号： G03F7/20 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To speedily and accurately perform a proximity effect correction in an accurate electron beam lithography device. SOLUTION: A proximity effect correction device has a circuit 112 for calculating the radiation dose at a small lattice region on a target surface a scattering influence evaluation circuit 123 for evaluating the irradiation influence due to the scattering of the radiation dose obtained by the circuit 112, and a correction irradiation intensity leading circuit 131 for calculating the proper correction irradiation intensity of electron beams from the result of the circuit 123 for each lattice region. Then, the circuit 123 obtains the convolution calculation according to the product of the radiation dose at a peripheral lattice region obtained by the circuit 112 and a Gauss distribution functions the sum of a result that is calculated by weighting three Gauss distributions by a scattering rate and performs a convolution calculation using a one-dimensional Gauss distribution function for horizontal direction in each convolution calculation, and performs the convolution calculation for a vertical direction based on the convolution calculation result in horizontal direction.

2. 发明专利

JPH11238671A ELECTRON BEAM LITHOGRAPHY EQUIPMENT 失效
公开(公告)号：JPH11238671A
公开(公告)日：1999-08-31
申请号：JP3897798
申请日：1998-02-20
申请人： TOSHIBA CORP , TOSHIBA MACHINE CO LTD
发明人： KAMIKUBO TAKASHI , ABE TAKAYUKI , YASUSE HIROTO , FUKUTOME YUJI , SHIMIZU MITSUKO , OKI SUSUMU , HATTORI YOSHIAKI , IIJIMA TOMOHIRO
IPC分类号： G03F7/20 , H01J37/305 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To control the electron beam dose and time of electron beam lithography equipment in fine control units by constituting the delay circuit section of a blanking control circuit of a plurality of delay circuits, having equal minimum delay time pitches with respect to control data and different delay time with respect to the same control data. SOLUTION: A blanking control circuit which controls a blanking deflector is constituted of two delay circuits 51 and 52, having the equal minimum delay time pitch against inputted electron beam dose data and choosable delay time which are shifted from each other by half a phase. A selection circuit 50 with table sends the electron beam dose data to each delay circuits 51 and 52 as delay time data based on its table and selects closet values for obtaining target electron beam doses. As a result, the blanking time and electron beam dose of electron beam lithography equipment can be changed at 1/2 the unit control time.

3. 发明专利

JPH10321494A CHARGED PARTICLE BEAM LITHOGRAPHIC METHOD 失效
公开(公告)号：JPH10321494A
公开(公告)日：1998-12-04
申请号：JP12416397
申请日：1997-05-14
申请人： TOSHIBA MACHINE CO LTD , TOSHIBA CORP
发明人： IIJIMA TOMOHIRO , HATTORI YOSHIAKI , ABE TAKAYUKI
IPC分类号： G03F7/20 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To obtain solutions with the accuracy corresponding to that when the calculation for correcting proximity effects by the expansion method is performed to higher order without increasing the calculation time and calculation resource. SOLUTION: In an electron beam lithographic method in which a pattern to be plotted is plotted with the optimum irradiating quantity by finding the optimum irradiating quantity at every position in the pattern, an approximate optimum irradiating quantity d0 of a sample is first found (S1). Then, a corrected irradiating quantity di is found by multiplying the exposure error which occurs when the sample is exposed with the irradiating quantity obtained in the preceding step, by the approximate optimum irradiating quantity d0 and a proportional constant, and this procedure is repeated (n) times (S2). Thereafter, a new n-th corrected irradiating quantity dn, is found by multiplying the final corrected irradiating quantity dn obtained in the step S2 by a correction factor which contains the approximate optimum irradiating quantity d0 and varies depending upon the location, and the optimum irradiating quantity (d) is obtained by adding the quantity d0 obtained in the step S1 and d1-dn-1 obtained in the step S2 to the n-th corrected irradiating quantity dn (S3).

4. 发明专利

JP2008177604A Electron beam drawing system and control method thereof 有权
公开(公告)号：JP2008177604A
公开(公告)日：2008-07-31
申请号：JP2008095027
申请日：2008-04-01
申请人： Toshiba Corp , 株式会社東芝
发明人： SHIMIZU MITSUKO , ABE TAKAYUKI , YASUSE HIROTO , OKI SUSUMU , KAMIKUBO TAKASHI , MURAKAMI EIJI , HATTORI YOSHIAKI , IIJIMA TOMOHIRO , HIGURE HITOSHI , MATSUKI KAZUTO
IPC分类号： H01L21/027 , H01J37/305
摘要： PROBLEM TO BE SOLVED: To diagnose the presence or absence of abnormality, such as a correction calculation error in proximity effect, and to locate an abnormal place easily. SOLUTION: An electron beam drawing system 60 comprises: an electron beam drawing means 2 for drawing a desired graphic pattern by irradiating the surface of a substrate with electron beams; a means 40 for computing a correction dosage for calculating a correction dosage for each small region in a drawing region, where the influence of the proximity effect is considered and the dosage of electron beams corresponding to the drawing graphic pattern is corrected; a control means 37 for calculating the amount of energy stored in the substrate when the electron beams having the corrected dosage are applied, calculating an error by comparing the amount of energy with a prescribed theoretical value, and determining precision in the operation of the means 40 for computing the correction dosage; a display means 67; and a data verification support means 61 for allowing the display means 67 to display information, where the corrected dosage is layered visibly, for each small region. COPYRIGHT: (C)2008,JPO&INPIT

5. 发明专利

JP2002124454A DRAWING DEVICE AND METHOD OF CHARGED PARTICLE BEAM 失效
公开(公告)号：JP2002124454A
公开(公告)日：2002-04-26
申请号：JP2000316747
申请日：2000-10-17
申请人： TOSHIBA CORP
发明人： OKI SUSUMU , ABE TAKAYUKI , ISHIMURA TAKIJI , HATTORI YOSHIAKI , IIJIMA TOMOHIRO
IPC分类号： G03F7/20 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To reduce total processing time by sorting by reducing the unneeded time in the sorting of the drawing order of semiconductor patterns. SOLUTION: An electron beam drawing device in a variable formation beam system comprises a shot data generation circuit section 40 for generating shot data where a figure to be drawn is divided for each sub field, a recording section 43 having different recording memories 43a-43e for each shot shape, a final shot data-processing circuit section 41 for deleting an information code for indicating the final shot data in the sub field and adding break data for indicating a break in the sub field for each shot shape, and a memory control circuit section 42 for writing the shot data and break data for each shot shape into corresponding recording memories and reading data in the recording memories for each shot shape in order, thus drawing a pattern in the order of read shots for each shot shape.

6. 发明专利

JPH11204415A METHOD AND DEVICE FOR ELECTRON BEAM DRAWING 失效
公开(公告)号：JPH11204415A
公开(公告)日：1999-07-30
申请号：JP766698
申请日：1998-01-19
申请人： TOSHIBA CORP
发明人： ITO MASAMITSU , ABE TAKAYUKI , KAMIKUBO TAKASHI , SHIMOMURA NAOHARU , SHIMIZU MITSUKO , HATTORI YOSHIAKI , IIJIMA TOMOHIRO
IPC分类号： G03F7/20 , H01J37/04 , H01J37/305 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To form a pattern of uniform finished dimension by suppressing irradiation amount fluctuation due to 'fogging'. SOLUTION: Firstly, a pattern designed by a CAD system is inputted in a data conversion calculator where a drawing data is converted, and the converted drawing data are inputted in a control calculation part (step S1). Then, a sample substrate is divided into separate meshes for proximity effect correction and 'fogging' correction, respectively. Using respective meshes, proximity effect correction data U(X) and 'fogging' correction data V(X) are calculated (step S2). A control circuit determines irradiation amount D(X) using the 'fogging' correction data V(X) and the proximity effect correction data U(x) (step S3).

7. 发明专利

JPH03274991A PLANT MONITOR 失效
公开(公告)号：JPH03274991A
公开(公告)日：1991-12-05
申请号：JP7628390
申请日：1990-03-26
申请人： TOSHIBA CORP
发明人： HATTORI YOSHIAKI
IPC分类号： H04Q9/00
摘要： PURPOSE:To improve versatility inexpensively by allowing a plant monitor to receive a plant data given from each data distribution means and a sent monitoring data, editing both data in a prescribed display form and displaying the edited result. CONSTITUTION:The system is divided into a safety system 21 and a regular system 23, plant data input processes 35a-35c, 37a, 37b are executed, the safety system 21 is operated according to principles of system separation and redundancy ensurance, the efficiency performance due to load decentralization is ensured with respect to the regular system 23 to improve the reliability and efficiency performance of the system. Moreover, work station computers 41a, 41b and personal computers 45a, 45b are used as a versatile computer group, the redundancy for the number of work stations 41a, 41b is provided with respect to monitor information database processes 49a-49d and for the number of the work stations 41a, 41b and the personal computers 45a, 45b altogether with respect to monitor display processes 51a-51f is provided to the system.

8. 发明专利

JP2005072055A Charged particle beam writing method, charged particle beam writing apparatus, writing data forming method, and writing control program 审中-公开
标题翻译：充电颗粒光束写入方法，充电颗粒光束写入装置，写入数据形成方法和写入控制程序
公开(公告)号：JP2005072055A
公开(公告)日：2005-03-17
申请号：JP2003209069
申请日：2003-08-27
申请人： Toshiba Corp , Toshiba Mach Co Ltd , 東芝機械株式会社 , 株式会社東芝
发明人： HATTORI YOSHIAKI , HIGURE HITOSHI , MURAKAMI EIJI , HORIUCHI TOMOYUKI
IPC分类号： H01L21/027
摘要： PROBLEM TO BE SOLVED: To enhance writing throughput by dividing writing data while taking account of a shot division system of hardware.
SOLUTION: In an electron beam writing method where a writing area on the surface of a sample is divided into a plurality of fields dependent on the deflection width of a beam scanning deflector, mask data of the entire writing area is divided while imparting a specified margin to each field, and a pattern is written on the basis of the divided mask data by a shot division system for each field, an optimal figure size is calculated in each field area when a pattern included in the mask data is divided at the field boundary, a figure dividing position is determined from the optimal figure size, and the pattern is divided at the figure dividing position if it exists in the boundary margin of the field area otherwise divided at the field boundary.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：通过在考虑到硬件的分割系统的同时分割写入数据来提高写入吞吐量。解决方案：在电子束写入方法中，将样品表面上的写入区域分成取决于束扫描偏转器的偏转宽度的多个场，整个写入区域的掩模数据被分割，同时赋予对于每个场指定的余量，并且通过用于每个场的拍摄分割系统基于划分的掩码数据写入模式，当包括在掩码数据中的模式被划分为每个场区域时，在每个场区域中计算最佳图形大小场边界，数字分割位置是根据最佳图形大小确定的，并且如果图形存在于场区域的边界，否则在图形划分位置被划分，否则在场边界被划分。版权所有（C）2005，JPO＆NCIPI

9. 发明专利

JPH05297179A 失效
公开(公告)号：JPH05297179A
公开(公告)日：1993-11-12
申请号：JP9794992
申请日：1992-04-17
申请人： TOSHIBA CORP
发明人： HATTORI YOSHIAKI
IPC分类号： G21C17/00
摘要： PURPOSE:To use the history data of process quantity on-line when the monitor control of an atomic power plant is conducted with a distributed system. CONSTITUTION:A plurality of normal process quantity history collecting devices 2 are provided in the series unit of a plant. One or more safety process quantity collecting devices 3 are provided. Safety process quantity history memory devices 4 of the same number as that of the safety process quantity collecting devices 3 are provided. The paired safety process quantity collecting device 3 and safety process quantity history memory device 4 are connected to each other with a one-way communicating line 5. An integrated process quantity history using device 6, seen from an operator, is provided. The safety process quantity history memory devices 4, all the normal process quantity history collecting devices 2, and the process quantity history using device 6 are mutually connected with a network type communicating line 7.

10. 发明专利

JPS61153707A PLANT INTERLOCK EXPLAINING DEVICE 失效
公开(公告)号：JPS61153707A
公开(公告)日：1986-07-12
申请号：JP27380484
申请日：1984-12-27
申请人： NIPPON ATOMIC IND GROUP CO , TOSHIBA CORP
发明人： HATTORI YOSHIAKI
IPC分类号： G05B23/02 , G06F19/00 , G21C17/00
摘要： PURPOSE:To prevent the generation of a human error, and to improve the safety and the operation rate by retrieving by a computer the cause of an interlock which has been set, when an industrial plant is being operated, etc., and displaying it on a display device. CONSTITUTION:An industrial plant P of an atomic power, etc. is provided with a sequential start/stop sequence for its operation, and has plural interlock systems and the same numb er of detectors for detecting the operating state. This interlock explaining device 1 is constututed of a signal input part 2 from the detector, an interlock retrieving processor 4, a data base 5, an explanation request use keyboard 6, and an explanation display device 7, whether plural logical circuit groups for inputting an interlock setting cause signal are true or false is decided successively, and its cause is retrieved. In this way, this cause can be displayed exactly and quickly by the explanation display device 7, and a burden of an operator of the industrial plant P can be reduced.

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