专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明专利

JPH11274459A Solid-state image pickup device 失效
标题翻译：固态图像拾取器件
公开(公告)号：JPH11274459A
公开(公告)日：1999-10-08
申请号：JP7197598
申请日：1998-03-20
申请人： Toshiba Corp , 株式会社東芝
发明人： INOUE IKUKO , NOZAKI HIDETOSHI , IHARA HISANORI , YAMAGUCHI TETSUYA , YAMASHITA HIROSHI , MAKABE AKIRA , NOMACHI EIKO , HORI MIKIKO , NAKAMURA NOBUO
IPC分类号： H01L27/146 , H04N5/335 , H04N5/365 , H04N5/367 , H04N5/369 , H04N5/3745
摘要： PROBLEM TO BE SOLVED: To reduce white scratches, fixed pattern noise and random noise, by reducing a leak current generated on a substrate interface.
SOLUTION: A solid-state image pick up device is provided with a photoelectric conversion part 20 formed on a semiconductor substrate, an amplifying transistor 2-1-1 modulated by signal charges accumulated by photoelectric conversion of the photoelectric conversion part 20, and read transistors (21, 22) which read a signal current from the amplifying transistor 2-1-1 from the photoelectric conversion part 20. The difference between the gate voltage of the read transistor and the reverse potential of the semiconductor substrate, namely, read potential Φ, is reduced, by setting the threshold value of the read transistor at a high value, within a range wherein reading of the signal charge from the photoelectric converting part 20 can be performed.
COPYRIGHT: (C)1999,JPO
摘要翻译：要解决的问题：通过减少在基板界面上产生的泄漏电流来减少白色划痕，固定图案噪声和随机噪声。解决方案：固态摄像装置设置有形成在半导体衬底上的光电转换部分20，由光电转换部分20的光电转换累积的信号电荷调制的放大晶体管2-1-1和读出的晶体管（21,22），其从光电转换部20读取来自放大晶体管2-1-1的信号电流。读取晶体管的栅极电压与半导体衬底的反向电位之间的差即读取电位Φ 通过将读取晶体管的阈值设定为高值，在可以执行从光电转换部20读取信号电荷的范围内被减小。

2. 发明专利

JPH11274458A Solid-state image pickup device 失效
标题翻译：固态图像拾取器件
公开(公告)号：JPH11274458A
公开(公告)日：1999-10-08
申请号：JP7089398
申请日：1998-03-19
申请人： Toshiba Corp , 株式会社東芝
发明人： IHARA HISANORI , NOZAKI HIDETOSHI , INOUE IKUKO , YAMAGUCHI TETSUYA , NARUSE HIROSHI , IGUMA HIDEMIKI , SHIBATA HIDENORI , SHIOYAMA YOSHIYUKI , MAKABE AKIRA , ABE SEIGO , NOMACHI EIKO , YAMASHITA HIROSHI , HORI MIKIKO
IPC分类号： H01L27/146 , H04N5/335 , H04N5/365 , H04N5/369 , H04N5/374 , H04N5/3745
CPC分类号： H01L27/14609 , H01L27/14643
摘要： PROBLEM TO BE SOLVED: To form an ion implanting region on the drain side of a read transistor, by extending the region to the lower part of a gate so as to provide equivalent reading to a CCD even with a low voltage.
SOLUTION: At a prescribed position on the surface of a P well 10, the (n) type diffusion layer 12 of a photodiode 11 that converts light into charges is formed. On the surface of the P well 10, a surface shield layer is provided at the upper part of the (n) type diffusion layer, and a drain 14 for a read transistor is formed at a prescribed distance from the surface shield layer 13. On the surface of the P well 11, a gate 15 for reading the accumulated charges in the (n) type diffusion layer of the photodiode to the drain 14 is provided. The drain has a protruding part so as to partially overlap with the gate 15 at least, at the lower part in the transistor channel direction.
COPYRIGHT: (C)1999,JPO
摘要翻译：要解决的问题：为了在读取晶体管的漏极侧形成离子注入区，通过将该区域延伸到栅极的下部，以便即使在低电压下也能够对CCD提供等同的读数。解决方案：在P阱10的表面上的规定位置，形成将光转换为电荷的光电二极管11的（n）型扩散层12。在P阱10的表面上，在（n）型扩散层的上部设置有表面屏蔽层，并且在与表面屏蔽层13规定的距离处形成用于读取晶体管的漏极14。 P阱11的表面，用于将漏极14中的光电二极管的（n）型扩散层中的累积电荷读取的栅极15。漏极具有突出部分，以便至少在晶体管沟道方向的下部与栅极15部分重叠。

3. 发明专利

JPH11274457A Solid-state image pick up device 失效
标题翻译：固态图像拾取器件
公开(公告)号：JPH11274457A
公开(公告)日：1999-10-08
申请号：JP7089298
申请日：1998-03-19
申请人： Toshiba Corp , 株式会社東芝
发明人： YAMASHITA HIROSHI , IHARA HISANORI , INOUE IKUKO , YAMAGUCHI TETSUYA , NAKAMURA NOBUO , NARUSE HIROSHI , IGUMA HIDEMIKI , SHIBATA HIDENORI , MAKABE AKIRA , ABE SEIGO , NOMACHI EIKO , SHIOYAMA YOSHIYUKI , HORI MIKIKO , NOZAKI HIDETOSHI
IPC分类号： H01L27/146 , H04N5/335 , H04N5/355 , H04N5/361 , H04N5/374
CPC分类号： H01L27/14609
摘要： PROBLEM TO BE SOLVED: To facilitate ejection of a signal charge at a signal accumulating part and to prevent deterioration of dynamic range in an element, thermal noise, residual image, etc., in the dark from generating, even when the pixel size of a MOS type solid-state image pick up device is reduced, a read gate voltage is deteriorated and a well concentration is increased.
SOLUTION: On the surface of a p-type silicon substrate 21, a (p)
+ type diffusion layer 23 which constitutes a photoelectric conversion region 22 and the drain 24 of a read MOS type field effect transistor are formed. At the lower part of the (p)
+ diffusion layer 23, a signal accumulating part 25 formed of an (n) type diffusion layer is formed adjacent to the (p)
+ type diffusion layer. On the surface of the silicon substrate 21, the gate electrode 26 of a MOS type field effect transistor is provided between the (p)
+ diffusion layer 23 and the drain 24. The edge part of the gate electrode 26 of the MOS transistor of the signal accumulating part 25 is protruded, having its edge position extended downward from the read gate electrode 26 of the diffusion layer 23 further than the edge part of the read gate electrode 26 of the (p)
+ diffusion layer 23 provided on the surface of the silicon substrate 21.
COPYRIGHT: (C)1999,JPO
摘要翻译：要解决的问题：为了便于在信号累积部分处的信号电荷的排出，并且防止在黑暗中的元件，热噪声，残留图像等中的动态范围的劣化产生，即使当像素尺寸 MOS型固体摄像装置减少，读栅极电压劣化，阱浓度增加。解决方案：在p型硅衬底21的表面上，形成构成光电转换区22的（p）+型扩散层23和读取MOS型场效应晶体管的漏极24。在（p）+扩散层23的下部，形成与（p）+型扩散层相邻的（n）型扩散层形成的信号存储部25。在硅衬底21的表面上，MOS型场效应晶体管的栅极26设置在（p）+扩散层23和漏极24之间.MOS晶体管的栅电极26的边缘部分信号累积部25的边缘位置比扩散层23的读取栅电极26向下延伸的边缘位置比设置在（p）+扩散层23的读取栅电极26的边缘部分突出硅衬底21的表面。

4. 发明专利

JPH11274455A Solid-state image pick up device 失效
标题翻译：固态图像拾取器件
公开(公告)号：JPH11274455A
公开(公告)日：1999-10-08
申请号：JP7055898
申请日：1998-03-19
申请人： Toshiba Corp , 株式会社東芝
发明人： YAMAGUCHI TETSUYA , NOZAKI HIDETOSHI , IHARA HISANORI , INOUE IKUKO , YAMASHITA HIROSHI , NARUSE HIROSHI , IGUMA HIDEMIKI , SHIBATA HIDENORI , MAKABE AKIRA , ABE SEIGO , NOMACHI EIKO , SHIOYAMA YOSHIYUKI , HORI MIKIKO
IPC分类号： H01L27/146 , H04N5/335 , H04N5/361 , H04N5/365 , H04N5/369 , H04N5/3745
CPC分类号： H01L27/14609
摘要： PROBLEM TO BE SOLVED: To provide a solid-state image pick up device, which accurately reads out a signal charge from a photodiode even when a voltage is reduced, and also reduces generation of leak current.
SOLUTION: A solid-state image pick up device is provided with a read transistor. The react transistor has an (n) type semiconductor layer 2, which is formed on a semiconductor substrate for photoelectric conversion, a (p) type semiconductor layer 3, which is formed to shield the upper surface of the (n) type semiconductor layer 2; and an (n) type semiconductor layer 4, which is formed on the surface of the semiconductor substrate and is connected electrically with the (n) type semiconductor layer 2 for reading a signal charge from the (n) type semiconductor layer 2. The read transistor reads the signal charge from the (n) type semiconductor layer 2 through the (n) type semiconductor layer 4. The (p) type semiconductor layer 3 and the (n) type semiconductor layer 4 are formed at a prescribed interval so as not to bring the depletion layer formed by the (p) type semiconductor layer 3 into contact with the depletion layer formed by the (n) type semiconductor layer 4.
COPYRIGHT: (C)1999,JPO
摘要翻译：要解决的问题：提供一种固态图像拾取装置，其即使在电压降低时也准确地从光电二极管读出信号电荷，并且还减少了泄漏电流的产生。解决方案：固态图像拾取装置具有读取晶体管。反应晶体管具有形成在用于光电转换的半导体衬底上的（n）型半导体层2，形成为（n）型半导体层2的上表面的（p）型半导体层3 ; 和（n）型半导体层4，其形成在半导体衬底的表面上并与（n）型半导体层2电连接，用于从（n）型半导体层2读取信号电荷。晶体管通过（n）型半导体层4从（n）型半导体层2读取信号电荷。（p）型半导体层3和（n）型半导体层4以规定的间隔形成为不使由（p）型半导体层3形成的耗尽层与由（n）型半导体层4形成的耗尽层接触。

5. 发明专利

JP2000091552A SOLID IMAGE PICKUP DEVICE 失效
公开(公告)号：JP2000091552A
公开(公告)日：2000-03-31
申请号：JP25871498
申请日：1998-09-11
申请人： TOSHIBA CORP
发明人： HORI MIKIKO , SHIOYAMA YOSHIYUKI , ABE SEIGO , IGUMA HIDEMIKI , SHIBATA HIDENORI , MAKABE AKIRA , NOMACHI EIKO , NARUSE HIROSHI , INOUE IKUKO , MATSUNAGA MASAYUKI , IHARA HISANORI , NAKAMURA NOBUO , YAMAGUCHI TETSUYA , YAMASHITA HIROSHI , NOZAKI HIDETOSHI
IPC分类号： H01L27/146 , H01L27/148 , H04N5/335 , H04N5/341 , H04N5/361 , H04N5/369 , H04N5/372 , H04N5/374
摘要： PROBLEM TO BE SOLVED: To enable the charge in a photodiode layer at low voltage to be read out even if a surface shield structure is adopted in a CMOS image sensor. SOLUTION: For example, a surface shield layer 17 is formed separate from the end of a read out gate 14 on the surface of a photodiode layer 16. Next, an impurity region 21 in higher concentration than that of the photodiode layer 16 is formed between this surface shield layer 17 and the read out gate 14. Through these procedures, the formation of potential barrier by the surface shield layer 17 is suppressed for facilitating reading of the charge accumulated in the photodiode layer 16, thereby enabling the read out voltage to be lowered.

6. 发明专利

JP2000091551A SOLID IMAGE PICK-UP DEVICE AND MANUFACTURE THEREOF 失效
公开(公告)号：JP2000091551A
公开(公告)日：2000-03-31
申请号：JP25871398
申请日：1998-09-11
申请人： TOSHIBA CORP
发明人： IGUMA HIDEMIKI , NOMACHI EIKO , MAKABE AKIRA , ABE SEIGO , SHIOYAMA YOSHIYUKI , NARUSE HIROSHI , SHIBATA HIDENORI , NAKAMURA NOBUO , YAMAGUCHI TETSUYA , YAMASHITA HIROSHI , IHARA HISANORI , INOUE IKUKO , NOZAKI HIDETOSHI
IPC分类号： H01L31/02 , H01L27/146 , H01L27/148
摘要： PROBLEM TO BE SOLVED: To make feasible avoiding the increase in reading out voltage in the case of adjacently providing a surface shield layer for suppressing surface recouping to a read out gate in a CMOS image sensor having a photodiode and the read out gate. SOLUTION: For example, a part of a photodiode layer 17 is extendedly formed at the lower part of a read out gate 15. At this time, the length of the extendedly formed part of the photodiode layer 17 is specified to be in the extent of avoiding the punch through between the photodiode layer 17 and a drain region 19 when the read out gate 15 is off. Through these procedures, the charge in the photodiode layer 17 can be directly taken up by the read out gate 15 through a path A.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式