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1. 发明专利

JP2009084746A Method for producing electrically conductive fiber material 有权
标题翻译：生产电导纤维材料的方法
公开(公告)号：JP2009084746A
公开(公告)日：2009-04-23
申请号：JP2007256519
申请日：2007-09-28
申请人： Toshiba Corp , 株式会社東芝
发明人： YAMAGE MASASHI , KUBOI SHUICHI
IPC分类号： D01F9/127 , C01B31/02 , H01B1/04 , H01B13/00 , H01J29/04 , H01J31/12
摘要： PROBLEM TO BE SOLVED: To provide a method for producing an electrically conductive fiber material, which is capable of forming many carbon nanofibers 20 in a short time, where the carbon nanofibers exhibits desired performances in accordance with applications. SOLUTION: The method for producing carbon nanofibers 20 as the electrically conductive fiber material in a fibrous or tubular form includes film-forming an electrically conductive catalyst layer 12 having direct electrical conductivity on the surface of a substrate 11 made of silicon, heating the electrically conductive catalyst layer 12 and introducing a mixed gas around the layer 12 under a reduced-pressure atmosphere to generate a plasma so as to conduct a CVD (chemical vapor deposition). COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种能够在短时间内形成许多碳纳米纤维20的导电性纤维材料的制造方法，其中碳纳米纤维根据应用表现出期望的性能。作为导电性纤维材料的碳纳米纤维20的制造方法以纤维状或管状的方式制造，包括在由硅制成的基板11的表面上形成具有直接导电性的导电催化剂层12，导电催化剂层12，并在减压气氛下在层12周围引入混合气体，生成等离子体，进行CVD（化学气相沉积）。版权所有（C）2009，JPO＆INPIT

2. 发明专利

JP2011171683A Nonvolatile semiconductor memory device 有权
标题翻译：非易失性半导体存储器件
公开(公告)号：JP2011171683A
公开(公告)日：2011-09-01
申请号：JP2010036652
申请日：2010-02-22
申请人： Toshiba Corp , 株式会社東芝
发明人： NAKAI TSUKASA , KUBOI SHUICHI , FUKUMIZU HIROYUKI , NOJIRI YASUHIRO , NOMACHI EIKO , KISHIDA MOTOYA , BABA MASANOBU
IPC分类号： H01L27/10 , H01L27/28 , H01L29/88 , H01L45/00 , H01L49/00 , H01L51/05 , H01L51/30
CPC分类号： G11C14/00 , H01L27/2409 , H01L27/2481 , H01L45/04 , H01L45/1233 , H01L45/149 , H01L45/1616
摘要： PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory device in which breakdown of a variable resistance element in a nonvolatile memory cell can be prevented.
SOLUTION: The nonvolatile semiconductor memory device includes a first line, a second line intersecting with the first line, and a memory cell located at a position where the first and second lines intersect with each other. The memory cell includes a variable resistance element and a negative resistance element connected in series with the variable resistance element.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：解决的问题：提供一种非易失性半导体存储器件，其中可以防止非易失性存储单元中的可变电阻元件的击穿。解决方案：非易失性半导体存储器件包括第一线，与第一线交叉的第二线，以及位于第一和第二线彼此相交的位置处的存储单元。存储单元包括与可变电阻元件串联连接的可变电阻元件和负电阻元件。版权所有（C）2011，JPO＆INPIT

3. 发明专利

JP2015043306A 光電変換膜、カメラ、光電変換膜の製造方法审中-公开
标题翻译：光电转换膜，相机，光电转换膜的制造方法
公开(公告)号：JP2015043306A
公开(公告)日：2015-03-05
申请号：JP2013175083
申请日：2013-08-26
申请人：株式会社東芝 , Toshiba Corp
发明人： KUBOI SHUICHI , SAWADA MASAHITO , AIZAWA TOSHIE , SUZUKI SATORU
IPC分类号： H01J29/45 , H01J31/38
摘要：【課題】一層良好な画像が得られる光電変換膜を提供する。【解決手段】実施形態によれば、光電変換膜は、バンドギャップを有し、かつ、受光した光から光電変換をする層を複数備える。一端に配置される層のバンドギャップを規定する伝導帯の底の位置の電子ボルト値は、当該一端に配置される層以外の層のバンドギャップを規定するか伝導帯の底の位置の電子ボルト値よりも小さい。【選択図】図3
摘要翻译：要解决的问题：提供能够获得更令人满意的图像的光电转换膜。解决方案：光电转换膜包括具有带隙的多个层并将接收的光转换成电。限定位于一端的层上的带隙的导带的底部的位置处的电子电压值限定除了设置在一端的层以外的层的带隙，或小于在一端设置的层的电子电压值导带底部的位置。

4. 发明专利

JP2012160640A Nonvolatile semiconductor memory device 审中-公开
标题翻译：非易失性半导体存储器件
公开(公告)号：JP2012160640A
公开(公告)日：2012-08-23
申请号：JP2011020598
申请日：2011-02-02
申请人： Toshiba Corp , 株式会社東芝
发明人： KUBOI SHUICHI , NAKAI TSUKASA , FUKUMIZU HIROYUKI , NOJIRI YASUHIRO , TAKADA SHINTETSU
IPC分类号： H01L27/105 , H01L27/28 , H01L45/00 , H01L49/00 , H01L51/05 , H01L51/30
摘要： PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory device having improved data retention characteristics.SOLUTION: A nonvolatile semiconductor memory device includes memory cells that are disposed between first wiring and second wiring and each have a variable resistance element changing its resistance. Each memory cell comprises; a variable resistance layer, a first electrode layer, a second electrode layer, and a first barrier-height control layer. The variable resistance layer functions as a variable resistance element. The variable resistance layer contains carbon (C), silicon (Si), and hydrogen (H) or contains the carbon (C), the silicon (Si), the hydrogen (H), and at least either of nitride (N) and oxygen (O). The first electrode layer is provided on one surface side of the variable resistance element. The second electrode is provided on the other surface side of the variable resistance element. The first barrier-height control layer is composed of an insulator and is provided between one surface of the variable resistance layer and the first electrode layer.
摘要翻译：解决的问题：提供具有改善的数据保持特性的非易失性半导体存储器件。解决方案：非易失性半导体存储器件包括设置在第一布线和第二布线之间的存储单元，并且每个具有改变其电阻的可变电阻元件。每个存储单元包括：可变电阻层，第一电极层，第二电极层和第一阻挡层高度控制层。可变电阻层用作可变电阻元件。可变电阻层包含碳（C），硅（Si）和氢（H），或包含碳（C），硅（Si），氢（H）以及氮化物（N）和氧（O）。第一电极层设置在可变电阻元件的一个表面侧。第二电极设置在可变电阻元件的另一表面侧。第一阻挡高度控制层由绝缘体构成，设置在可变电阻层的一个面和第一电极层之间。版权所有（C）2012，JPO＆INPIT

5. 发明专利

JP2013175605A Manufacturing method for nonvolatile semiconductor memory device and nonvolatile semiconductor memory device 审中-公开
标题翻译：非易失性半导体存储器件和非易失性半导体存储器件的制造方法
公开(公告)号：JP2013175605A
公开(公告)日：2013-09-05
申请号：JP2012039327
申请日：2012-02-24
申请人： Toshiba Corp , 株式会社東芝
发明人： KUBOI SHUICHI , IGUCHI SUNAO , IWASE MASAO , MATSUDA TORU
IPC分类号： H01L21/336 , H01L21/8247 , H01L27/115 , H01L29/788 , H01L29/792
CPC分类号： H01L29/66666 , H01L27/11582 , H01L29/7827
摘要： PROBLEM TO BE SOLVED: To provide a manufacturing method for a nonvolatile semiconductor memory device capable of performing etching processing excellent in shape controllability, and further to provide the nonvolatile semiconductor memory device.SOLUTION: A manufacturing method for a nonvolatile semiconductor memory device comprises the steps of: forming oxide layers among electrode layers and layers to be etched at any sides of upper sides and lower sides of the electrode layers and forming a laminate while alternately laminating the electrode layers and the layers to be etched; forming grooves passing through the laminate in a lamination direction; embedding insulators into the grooves; forming holes passing through the laminate in the lamination direction; selectively removing the layers to be etched via the holes; forming charge storage layers inside the holes; and forming channel body layers inside the charge storage layers.
摘要翻译：要解决的问题：提供一种能够进行形状可控性优异的蚀刻处理的非易失性半导体存储器件的制造方法，并且还提供非易失性半导体存储器件。解决方案：一种用于非易失性半导体存储器件的制造方法包括以下步骤在电极层的上侧和下侧的任何一侧的电极层和被蚀刻层之间形成氧化物层，并且在交替层叠电极层和被蚀刻层的同时形成层压体; 在层叠方向上形成通过所述层叠体的槽; 将绝缘子嵌入槽中; 在层叠方向上形成穿过层叠体的孔; 通过孔选择性去除待蚀刻的层; 在孔内形成电荷存储层; 以及在电荷存储层内形成通道体层。

6. 发明专利

JP2012043951A Nonvolatile storage device and control method of the same 审中-公开
标题翻译：非易失存储器件及其控制方法
公开(公告)号：JP2012043951A
公开(公告)日：2012-03-01
申请号：JP2010183344
申请日：2010-08-18
申请人： Toshiba Corp , 株式会社東芝
发明人： FUKUMIZU HIROYUKI , TAKADA SHINTETSU , NOJIRI YASUHIRO , KUBOI SHUICHI , NAKAI TSUKASA
IPC分类号： H01L27/10 , H01L45/00 , H01L49/00
摘要： PROBLEM TO BE SOLVED: To provide a nonvolatile storage device which can improve a yield of switching.SOLUTION: The nonvolatile storage device according to an embodiment comprises a lower electrode film BE, an upper electrode film TE, and a resistance change layer RW sandwiched between the lower electrode film BE and the upper electrode film TE. The resistance change layer RW is made of an amorphous film including N, and includes Si and C as main components, which can reversibly change the resistive state among a plurality of different resistive states by an electrical signal flowing from the upper electrode film TE side to the lower electrode film BE side. The upper electrode film TE includes a material having nitrogen concentration lower than that of the lower electrode film BE.
摘要翻译：解决的问题：提供可以提高切换成品率的非易失性存储装置。解决方案：根据实施例的非易失性存储装置包括下电极膜BE，上电极膜TE和夹在下电极膜BE和上电极膜TE之间的电阻变化层RW。电阻变化层RW由包括N的非晶膜构成，并且包括Si和C作为主要成分，其可以通过从上电极膜TE侧流动的电信号在多个不同的电阻状态之间可逆地改变电阻状态下电极膜BE侧。上电极膜TE包括氮浓度低于下电极膜BE的材料。版权所有（C）2012，JPO＆INPIT

7. 发明专利

JP2011135050A Nonvolatile semiconductor storage device 审中-公开
标题翻译：非易失性半导体存储器件
公开(公告)号：JP2011135050A
公开(公告)日：2011-07-07
申请号：JP2010251759
申请日：2010-11-10
申请人： Toshiba Corp , 株式会社東芝
发明人： KUBOI SHUICHI , TAKADA SHINTETSU , NAKAI TSUKASA , FUKUMIZU HIROYUKI , NOJIRI YASUHIRO , OTSUKA KENICHI
IPC分类号： H01L27/105 , G11C13/00 , H01L45/00 , H01L49/00
CPC分类号： H01L27/101 , H01L27/2409 , H01L45/04 , H01L45/148
摘要： PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor storage device that suppresses a probability of malfunction and is reducible in power consumption. SOLUTION: The nonvolatile semiconductor storage device includes a first wiring; a second wiring that exists at positions opposed to the first wiring; and a variable resistance layer that exists between the first wiring and the second wiring, and that can change reversibly between a first state having a first resistivity and a second state having a second resistivity that is higher than the first resistivity, by a voltage applied via the first wiring and the second wiring, or by a current supplied via the first wiring and the second wiring. The variable resistance layer has a compound of carbon and silicon as the main ingredient thereof, and also contains hydrogen. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种抑制故障概率并可减少功耗的非易失性半导体存储装置。解决方案：非易失性半导体存储装置包括第一布线; 存在于与所述第一布线相对的位置处的第二布线; 以及可变电阻层，其存在于所述第一布线和所述第二布线之间，并且可以在具有第一电阻率的第一状态和具有高于所述第一电阻率的第二电阻率的第二状态之间可逆地改变，第一布线和第二布线，或通过经由第一布线和第二布线提供的电流。可变电阻层具有碳和硅作为其主要成分的化合物，并且还含有氢。版权所有（C）2011，JPO＆INPIT

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