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1. 发明专利

JP2011204767A Light emitting diode element and method of manufacturing the same 审中-公开
标题翻译：发光二极管元件及其制造方法
公开(公告)号：JP2011204767A
公开(公告)日：2011-10-13
申请号：JP2010068428
申请日：2010-03-24
申请人： Toshiba Corp , 株式会社東芝
发明人： TONOTANI JUNICHI , NUNOTANI NOBUHITO
IPC分类号： H01L33/62
摘要： PROBLEM TO BE SOLVED: To provide a light emitting diode element that has a superior resistive structure against an external shock, and suppresses or prevents cracking of and damage to respective compound semiconductor layers and light emitting layers.SOLUTION: The light emitting diode element includes a support substrate, an electrode for first conductive type formed on a surface of the support substrate, a first conductive type compound semiconductor layer, a light emitting layer and a second conductive type semiconductor layer formed in order on a surface of the electrode, and an electrode for second conductive type formed on a surface of the second conductive type compound semiconductor layer, a support substrate side and a compound semiconductor layer side including the light emitting layer being stuck together with the electrode for first conductive type. An insulating layer having wider area than the electrode for second conductive type is formed on an interface between the surface of the support substrate positioned right below the electrode for second conductive type, and the electrode for first conductive type, and a frame-shaped space is formed in a region of the electrode for first conductive type on the insulating layer to electrically separate an electrode portion inside the space and an electrode portion outside the space from each other.
摘要翻译：要解决的问题：提供一种具有优于外部冲击的电阻结构的发光二极管元件，并且抑制或防止各化合物半导体层和发光层的破裂和损坏。解决方案：发光二极管元件包括支撑基板，在支撑基板的表面上形成的用于第一导电类型的电极，在电极的表面上依次形成的第一导电型化合物半导体层，发光层和第二导电型半导体层，以及电极对于形成在第二导电类型化合物半导体层的表面上的第二导电类型，支撑衬底侧和包括发光层的化合物半导体层侧与第一导电类型的电极粘合在一起。在位于第二导电类型的电极正下方的支撑基板的表面和第一导电类型的电极之间的界面上形成具有比用于第二导电类型的电极宽的面积的绝缘层，并且框状空间是形成在绝缘层上的用于第一导电类型的电极的区域中，以将空间内的电极部分和空间之外的电极部分电分离。

2. 发明专利

JP2006107743A Organic electroluminescent display device 审中-公开
标题翻译：有机电致发光显示装置
公开(公告)号：JP2006107743A
公开(公告)日：2006-04-20
申请号：JP2004288412
申请日：2004-09-30
申请人： Toshiba Corp , Toshiba Matsushita Display Technology Co Ltd , 東芝松下ディスプレイテクノロジー株式会社 , 株式会社東芝
发明人： OKADA NAOTADA , TONOTANI JUNICHI , UEMURA TSUYOSHI , OKUYA SATOSHI , AKIYOSHI MUNEHARU , KUBOTA HIROSHI
IPC分类号： H05B33/02 , G02B5/18 , H01L51/50
摘要： PROBLEM TO BE SOLVED: To provide an organic EL display device capable of improving the directivity of light entered into an optically-transparent insulation layer by a simple structure.
SOLUTION: This organic electroluminescent display device is provided with the optically-transparent insulation layer, an organic electroluminescent element and a three-dimensional diffraction element. The organic electroluminescent element is provided with: a back electrode arranged on the back side with respect to the optically-transparent insulation layer; an optically-transparent front electrode interlaid between the optically-transparent insulation layer and the back electrode; and an organic matter layer interlaid between the front electrode and the back electrode and including a luminescent layer. The three-dimensional element has a double cross-sectional structure of specific dielectric constant modulation disposed on an optical path from a point where light emitted by the luminescent layer leaves an organic matter layer to a point where the light reaches the optically-transparent insulation layer.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：解决的问题：提供能够通过简单的结构提高进入光透明绝缘层的光的方向性的有机EL显示装置。解决方案：该有机电致发光显示装置设置有光透明绝缘层，有机电致发光元件和三维衍射元件。有机电致发光元件设置有：相对于光学透明绝缘层设置在背面的背面电极; 光学透明的前电极，位于光透明绝缘层和背电极之间; 以及夹在前电极和背电极之间并包括发光层的有机物质层。三维元件具有设置在从发光层发射的光离开有机物质层到光到达光透明绝缘层的点的光路上的比介电常数调制的双截面结构。版权所有（C）2006，JPO＆NCIPI

3. 发明专利

JP2005063840A Spontaneous light emission display device and organic electroluminescent display device 审中-公开
标题翻译：自发光发射显示装置和有机电致发光显示装置
公开(公告)号：JP2005063840A
公开(公告)日：2005-03-10
申请号：JP2003293113
申请日：2003-08-13
申请人： Toshiba Corp , Toshiba Matsushita Display Technology Co Ltd , 東芝松下ディスプレイテクノロジー株式会社 , 株式会社東芝
发明人： UEMURA TSUYOSHI , OKUYA SATOSHI , KUBOTA HIROSHI , OKADA NAOTADA , TONOTANI JUNICHI
IPC分类号： H05B33/02 , G09F9/30 , H01L27/32 , H01L51/50 , H01L51/52 , H05B33/14
CPC分类号： H01L51/5268 , H01L27/3244 , H01L51/5262
摘要： PROBLEM TO BE SOLVED: To enhance light emission efficiency of a spontaneous light emission display device of an organic electroluminescent display device.
SOLUTION: The organic electroluminescent display device 1 of this invention comprises: a light-transmissive insulating layer 10, an organic electroluminescent element 40, a light collecting means 30, and a diffusing means 60. The organic electroluminescent element 40 comprises: a back electrode 43 disposed on a back side relative to the light-transmissive insulating layer 10; a light-transmissive front electrode 41 interposed between the insulating layer 10 and the back electrode 43; and an organic substance layer 42 interposed between the front electrode 41 and the back electrode 43 and including an light-emitting layer 42a. The light collecting means 30 is disposed on an optical path along which light emitted by the light-emitting layer 42a reaches the insulating layer 10 after going out of the organic layer 42. The light collecting means 30 collects light inputted from the organic layer 42 and outputs the light to the insulating layer 10. The diffusing means 60 is disposed on a front side relative to the insulating layer 10, diffuses light inputted from the insulating layer 10 and outputs the light to the outside world.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：解决方案的问题：提高有机电致发光显示装置的自发发光显示装置的发光效率。解决方案：本发明的有机电致发光显示装置1包括：透光绝缘层10，有机电致发光元件40，聚光装置30和漫射装置60.有机电致发光元件40包括：配置在相对于透光性绝缘层10的背侧的背面电极43; 介于绝缘层10和背面电极43之间的透光前电极41; 以及插入在前电极41和背电极43之间并包括发光层42a的有机物质层42。光收集装置30设置在从发光层42a发射的光在有机层42出射之后到达绝缘层10的光路上。聚光装置30收集从有机层42输入的光和将光输出到绝缘层10.漫射装置60相对于绝缘层10设置在前侧，漫射从绝缘层10输入的光并将光输出到外界。版权所有（C）2005，JPO＆NCIPI

4. 发明专利

JP2004297032A Exposing method and manufacturing method of semiconductor device using the same 审中-公开
公开(公告)号：JP2004297032A
公开(公告)日：2004-10-21
申请号：JP2003206104
申请日：2003-08-05
申请人： Toshiba Corp , 株式会社東芝
发明人： SUZUKI HIROYUKI , OKAWA HIDEKI , TONOTANI JUNICHI
IPC分类号： G03F7/20 , H01L21/027
CPC分类号： B82Y10/00 , G03F7/2041 , G03F7/70325 , G03F7/70341 , G03F7/7035 , H01L21/0274 , Y10S438/942
摘要： PROBLEM TO BE SOLVED: To provide an exposing method by which a fine exposure which is not restricted by any wavelength of an optical source can be realized without damaging any photomask and any photosensitive resist layer.
SOLUTION: In the exposing method by which an upper layer resist 13 is exposed by allowing the upper layer resist 13 and a photomask 20 having a chromium film 22 to come near, the chromium film 22 having an opening portion 23 dimensionally smaller than an optical wavelength oscillated by the optical source is allowed to come near to the upper layer resist 13 via a purified water film 15, and a neighboring field light K is generated at a position corresponding to the opening portion 23 to expose the upper layer resist 13.
COPYRIGHT: (C)2005,JPO&NCIPI

5. 发明专利

JP2012064387A Organic electroluminescent display device and manufacturing method thereof 审中-公开
标题翻译：有机电致发光显示装置及其制造方法
公开(公告)号：JP2012064387A
公开(公告)日：2012-03-29
申请号：JP2010206649
申请日：2010-09-15
申请人： Toshiba Corp , 株式会社東芝
发明人： TONOTANI JUNICHI , KAWASHIMA TOMOHITO , ONOE SEIJI
IPC分类号： H05B33/22 , H01L51/50 , H05B33/10
摘要： PROBLEM TO BE SOLVED: To provide an organic electroluminescent display device that has higher luminous efficacy and high manufacturing yield.SOLUTION: The organic electroluminescent display device includes: a lower electrode; an organic layer including a luminous layer provided on the lower electrode; an upper electrode provided on the organic layer; and an isolation layer that is adjacent to the lower electrode and does not coat a surface of the lower electrode. A surface of the isolation layer of the organic electroluminescent display device is substantially flush with the surface of the lower electrode, and the isolation layer is in contact with the upper electrode.
摘要翻译：解决的问题：提供具有更高发光效率和高制造成品率的有机电致发光显示装置。有机电致发光显示装置包括：下电极; 包括设置在下电极上的发光层的有机层; 设置在有机层上的上电极; 以及与下电极相邻并且不涂覆下电极的表面的隔离层。有机电致发光显示装置的隔离层的表面与下电极的表面大致齐平，隔离层与上电极接触。版权所有（C）2012，JPO＆INPIT

6. 发明专利

JP2011192408A Method for manufacturing organic electroluminescence display device 有权
标题翻译：制造有机电致发光显示装置的方法
公开(公告)号：JP2011192408A
公开(公告)日：2011-09-29
申请号：JP2010055102
申请日：2010-03-11
申请人： Toshiba Corp , 株式会社東芝
发明人： KAWASHIMA TOMOHITO , TONOTANI JUNICHI
IPC分类号： H05B33/10 , H01L51/50 , H05B33/12 , H05B33/22
CPC分类号： H01L27/3246 , H01L51/0013
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing an organic electroluminescence display device of higher transfer accuracy.
SOLUTION: The method for manufacturing the organic electroluminescence display device includes processes for forming a plurality of first electrodes 2 on a substrate 1 at fixed spaces, forming a light emitting function layer 3 including a light emission layer 3c on the upper faces of the first electrodes 2 at least, forming barrier ribs 4 on the upper face of the light emitting function layer 3 between the first electrodes 2 after forming the light emitting function layer 3, and forming a second electrode 7 on the first electrodes 2.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：解决的问题：提供一种具有更高转印精度的有机电致发光显示装置的制造方法。解决方案：制造有机电致发光显示装置的方法包括在固定空间上在基板1上形成多个第一电极2的工艺，在基板1的上表面上形成包括发光层3c的发光功能层3 第一电极2至少在形成发光功能层3之后在第一电极2之间的发光功能层3的上表面上形成阻挡肋4，并在第一电极2上形成第二电极7。 >版权所有（C）2011，JPO＆INPIT

7. 发明专利

JP2007265680A Organic electroluminescent element and its manufacturing method 审中-公开
标题翻译：有机电致发光元件及其制造方法
公开(公告)号：JP2007265680A
公开(公告)日：2007-10-11
申请号：JP2006086382
申请日：2006-03-27
申请人： Toshiba Corp , 株式会社東芝
发明人： TONOTANI JUNICHI , HIGUCHI KATSUTOSHI
IPC分类号： H05B33/10 , G09F9/00 , H01L51/50
CPC分类号： H01L51/0007 , H05B33/10 , Y10T428/31504 , Y10T428/3154 , Y10T428/31938
摘要： PROBLEM TO BE SOLVED: To provide an organic electroluminescent element with long life and its manufacturing method. SOLUTION: An anode 3, a hole transport layer 4, an electron block layer 5, a light-emitting layer 6, an electron injection layer 7 and a cathode are laminated in that order on a transparent substrate 2 to manufacture the organic electroluminescent element 1. Then, at the time of forming of the light-emitting layer 5, an organic material is dissolved in a solvent such as xylene to prepare organic solution, and this organic solution layer is dried to form the light-emitting layer 6. Here, a solvent with a moisture concentration and an oxygen concentration regulated at 100 ppm by mass or less is used, for instance, one with less moisture concentration and less oxygen concentration than is used at an atmosphere in which coating and drying of the organic solution takes place. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供具有长寿命的有机电致发光元件及其制造方法。解决方案：将阳极3，空穴传输层4，电子阻挡层5，发光层6，电子注入层7和阴极依次层叠在透明基板2上，制造有机物电致发光元件1.然后，在形成发光层5时，将有机材料溶解在诸如二甲苯的溶剂中以制备有机溶液，并将该有机溶液层干燥以形成发光层6 这里，使用水分浓度和氧浓度调节为100质量ppm以下的溶剂，例如，比水分浓度小，氧浓度低的气氛比在有机物的涂布和干燥的气氛中使用解决方案发生。版权所有（C）2008，JPO＆INPIT

8. 发明专利

JP2007201215A Plasma etching device, plasma etching method, and manufacturing method for semiconductor device 审中-公开
标题翻译：等离子体蚀刻装置，等离子体蚀刻方法和半导体器件的制造方法
公开(公告)号：JP2007201215A
公开(公告)日：2007-08-09
申请号：JP2006018460
申请日：2006-01-27
申请人： Toshiba Corp , 株式会社東芝
发明人： TONOTANI JUNICHI
IPC分类号： H01L21/3065 , H01L29/78
摘要： PROBLEM TO BE SOLVED: To provide a plasma etching device capable of etching a rare earth element oxide formed on a silicon board at a high selection ratio, and a manufacturing method for a semiconductor in which a rare earth element oxide film is formed on a silicon board.
SOLUTION: The plasma etching device 1 is provided with a supply means 21 which supplies boron, fluorine, carbon, and silicon to an atmosphere inside a vacuum chamber 2. The supply means 21 holds a solid supply material 52 containing the boron, fluorine, carbon, and silicon. When a lanthanum oxide film formed on a silicon board is subjected to plasma etching by the plasma etching device 1, an etching rate of the lanthanum oxide film can be made higher than that of the silicon board to offer a high selection rate. This allows easy manufacturing of a CMOS having a lanthanum oxide film with a high dielectric constant as a gate insulating film.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种能够以高选择比蚀刻在硅板上形成的稀土元素氧化物的等离子体蚀刻装置及其中形成稀土元素氧化物膜的半导体的制造方法在硅板上。解决方案：等离子体蚀刻装置1设置有供应装置21，其将硼，氟，碳和硅供应到真空室2内的气氛中。供给装置21保持包含硼的固体供应材料52，氟，碳和硅。当通过等离子体蚀刻装置1对在硅板上形成的氧化镧膜进行等离子体蚀刻时，可以使氧化镧膜的蚀刻速率高于硅板的蚀刻速率以提供高选择率。这允许容易地制造具有高介电常数的氧化镧膜作为栅极绝缘膜的CMOS。版权所有（C）2007，JPO＆INPIT

9. 发明专利

JP2005063838A Optical device and organic el display device 审中-公开
标题翻译：光学装置和有机EL显示装置
公开(公告)号：JP2005063838A
公开(公告)日：2005-03-10
申请号：JP2003293111
申请日：2003-08-13
申请人： Toshiba Corp , Toshiba Matsushita Display Technology Co Ltd , 東芝松下ディスプレイテクノロジー株式会社 , 株式会社東芝
发明人： OKUYA SATOSHI , UEMURA TSUYOSHI , KUBOTA HIROSHI , OKADA NAOTADA , TONOTANI JUNICHI , SUZUKI HIROYUKI , OKAWA HIDEKI
IPC分类号： G02B5/18 , G09F9/30 , H01L27/32 , H01L51/50 , H01L51/52 , H05B33/00 , H05B33/02 , H05B33/12 , H05B33/14 , H05B33/24
CPC分类号： H01L51/5268 , H01L27/3211 , H01L27/3244 , H01L51/5275
摘要： PROBLEM TO BE SOLVED: To improve the luminous efficiency of a self-light-emitting device and an organic EL display device. SOLUTION: The optical device consists of a light-transmitting insulating layer 10, a back electrode 43 arranged at the back side of the light-transmitting insulating layer 10, a light-transmitting front electrode 41 intercalated between the light-transmitting insulating layer 10 and the back electrode 43, a self-light-emitting element 40 intercalated between the front electrode 41 and the back electrode 43 and equipped with a light-activated layer 42 including a light-emitting layer 42a, and a diffraction grating 30 arranged on a light path on which light emitted by the self-light-emitting layer 42a is irradiated from the light-activated layer 42 and reaches the light-transmitting insulating layer 10. A grating constant of the diffraction grating 30 is so set that a primary diffraction light generated as light of the maximum intensity out of the light emitted by the self-light-emitting element 40 and repeatedly reflecting and interfering at a further rear face side than the light-transmitting insulating layer 10 and passing on to a film face direction enters the diffraction grating 30 can be irradiated from the light-transmitting insulating layer 10. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提高自发光装置和有机EL显示装置的发光效率。解决方案：光学器件由透光绝缘层10，布置在透光绝缘层10背面的背面电极43，插入在透光绝缘层10之间的透光前电极41组成。层10和背面电极43，插入在前电极41和背电极43之间并配备有包括发光层42a的光活化层42的自发光元件40和布置成在自发光层42a发射的光被照射到光激发层42并到达透光绝缘层10的光路上。衍射光栅30的光栅常数设定为主作为由自发光元件40发出的光中的最大强度的光产生的衍射光，并且在比光tr的另一个背面侧反复反射和干涉可以从透光绝缘层10照射绝缘层10并且进入膜面方向进入衍射光栅30。版权所有（C）2005，JPO＆NCIPI

10. 发明专利

JP2012174907A Semiconductor device 审中-公开
标题翻译：半导体器件
公开(公告)号：JP2012174907A
公开(公告)日：2012-09-10
申请号：JP2011035918
申请日：2011-02-22
申请人： Toshiba Corp , 株式会社東芝
发明人： HIROYA FUTOSHI , TONOTANI JUNICHI
IPC分类号： H01L27/115 , H01L21/28 , H01L21/336 , H01L21/8242 , H01L21/8246 , H01L21/8247 , H01L27/105 , H01L27/108 , H01L29/423 , H01L29/49 , H01L29/788 , H01L29/792
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device capable of improving reliability in operation characteristics.SOLUTION: A semiconductor device 1 comprises a substrate 7 containing silicon and a stacked body 6 provided on the substrate 7. The stacked body 6 includes a suppress region 13 containing fluorine at least on the side of the substrate of a sidewall of the stacked body 6. The suppress region 13 is provided on the side of the sidewall of the insulating film 2 provided on the substrate 7, and has a fluorine concentration greater than that of a channel region 11.

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