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1. 发明专利

JP2011230980A Method for forming carbon nanotube and carbon nanotube film-forming apparatus 有权
标题翻译：形成碳纳米管和碳纳米管成膜装置的方法
公开(公告)号：JP2011230980A
公开(公告)日：2011-11-17
申请号：JP2010105456
申请日：2010-04-30
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： MATSUMOTO TAKASHI , SUGIURA MASAHITO , KOIZUMI KENJIRO , KASHIWAGI YUSAKU
IPC分类号： C01B31/02 , H01L21/285 , H01L21/3205 , H01L23/52
CPC分类号： C23C16/503 , B82Y30/00 , B82Y40/00 , C01B31/0226 , C01B32/16 , C23C16/26 , C23C16/4412 , C23C16/455 , C23C16/458 , C23C16/511 , H01L21/28556 , H01L21/76879 , H01L23/5226 , H01L23/53276 , H01L2221/1094 , H01L2924/0002 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a method for forming carbon nanotubes filling up the openings of such as via holes and grooves for wiring on an object to be treated with the carbon nanotube film at high density.SOLUTION: The object to be treated which has one or a plurality of openings on the surface thereof and a catalytic metal layer formed on the bottom of the openings is prepared (STEP 1), oxygen plasma treatment is performed on the catalytic metal layer (STEP 2), the catalytic metal layer after oxygen plasma treatment is subjected to hydrogen-containing plasma treatment, thereby activating the surface of the catalytic metal layer (STEP 3), and then carbon nanotubes are grown by plasma CVD on the catalytic metal layer, and the openings of the object to be treated are filled up with the carbon nanotubes (STEP 5).
摘要翻译：要解决的问题：提供一种填充碳纳米管膜的待处理物体上的诸如通孔和沟槽用于布线的开口的碳纳米管的方法。解决方案：制备在其表面上具有一个或多个开口的待处理物体和形成在开口底部的催化金属层（步骤1），对催化金属进行氧等离子体处理层（步骤2），对氧等离子体处理后的催化金属层进行含氢等离子体处理，从而活化催化金属层的表面（步骤3），然后通过等离子体CVD在催化金属上生长碳纳米管层，并且用碳纳米管填充待处理物体的开口（步骤5）。版权所有（C）2012，JPO＆INPIT

2. 发明专利

JP2003068733A Method of forming porous film and forming apparatus of the same 有权
标题翻译：形成多孔膜的方法和其形成装置
公开(公告)号：JP2003068733A
公开(公告)日：2003-03-07
申请号：JP2001261936
申请日：2001-08-30
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： KASHIWAGI YUSAKU , SUGIURA MASAHITO , MIYOSHI SHUSUKE , KAGAWA KEIEI
IPC分类号： C01B33/12 , C23C14/22 , H01L21/316
摘要： PROBLEM TO BE SOLVED: To provide a method of forming a porous film, which is capable of forming a desired porous film, and a forming apparatus of the porous film.
SOLUTION: The porous forming apparatus comprises a chamber 2 and an electron beam source 3. The chamber 2 houses a semiconductor wafer W and a target 5 where particulates having a substantially uniform diameter are aggregated. The electron beam source 3 is arranged so as to face the target 5, and activated particulates having the substantially uniform diameter are generated by performing ablation processing to the target 5. Then, the activated particulates are deposited on the semiconductor wafer W to form the porous film having space between the deposited particulates.
COPYRIGHT: (C)2003,JPO
摘要翻译：要解决的问题：提供一种能够形成所需多孔膜的多孔膜的形成方法和多孔膜的形成装置。解决方案：多孔成形设备包括室2和电子束源3.室2容纳半导体晶片W和靶5，其中具有基本均匀直径的颗粒聚集。电子束源3被配置为面对靶5，通过对靶5进行烧蚀处理，产生具有基本均匀直径的活性微粒。然后，将活化的微粒沉积在半导体晶片W上，形成多孔膜在沉积的颗粒之间具有空间。

3. 发明专利

JP2007046134A Method for forming metallic film, and recording medium with program recorded therein 审中-公开
标题翻译：形成金属膜的方法和记录有程序的介质
公开(公告)号：JP2007046134A
公开(公告)日：2007-02-22
申请号：JP2005233819
申请日：2005-08-11
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： TACHIBANA MITSUHIRO , SUGIURA MASAHITO , NISHIMORI TAKASHI , SATO KOICHI
IPC分类号： C23C16/44 , C23C16/08 , H01L21/285 , H01L21/768
CPC分类号： C23C16/14 , C23C16/45523 , H01L21/28562 , H01L21/76843 , H01L21/76876 , H01L21/76877
摘要： PROBLEM TO BE SOLVED: To form a metallic film having resistance lower than that of the conventional one by controlling its crystal structure.
SOLUTION: The method for producing a metallic film comprises: a step where a metallic raw material gas such as WF
6 gas is fed; and a step where a hydrogen compound gas such as SiH
4 gas is fed are repeatedly performed alternately with a purge step where inert gas such as Ar gas and N
2 gas is fed interposed, thus a first tungsten film deposition step where an amorphous material-containing first tungsten film is deposited, and a second tungsten film deposition step where the above WF
6 gas and reducing gas such as H
2 gas are simultaneously fed to the surface of the first tungsten film so as to deposit a second tungsten film are comprised in the method. By changing the performing time of the purge step after the step of feeding the SiH
4 gas, the ratio of the amorphous material comprised in the first tungsten film is controlled.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：通过控制其晶体结构来形成具有比常规电阻低的电阻的金属膜。解决方案：金属膜的制造方法包括：供给诸如WF 6气体的金属原料气体的步骤; 并且在进行惰性气体例如Ar气体和N 2气体的吹扫步骤中交替地交替进行诸如SiH 4 SB气体的氢化合物气体的步骤插入，因此沉积含无定形材料的第一钨膜的第一钨膜沉积步骤和第二钨膜沉积步骤，其中将上述WF 6 SB 6气体和还原气体如H 2气体同时供给到第一钨膜的表面，以便沉积第二钨膜。通过在进料SiH 4 SB气体的步骤之后改变吹扫步骤的执行时间，控制包含在第一钨膜中的非晶材料的比例。版权所有（C）2007，JPO＆INPIT

4. 发明专利

JP2007009298A Method for depositing tungsten film, film deposition system, storage medium, and semiconductor device 有权
标题翻译：沉积金属薄膜，薄膜沉积系统，储存介质和半导体器件的方法
公开(公告)号：JP2007009298A
公开(公告)日：2007-01-18
申请号：JP2005194170
申请日：2005-07-01
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： SUGIURA MASAHITO , MIZOGUCHI YASUTAKA , AEBA YASUSHI
IPC分类号： C23C16/14 , H01L21/28 , H01L21/285 , H01L21/768
CPC分类号： C23C16/14 , C23C16/45527 , H01L21/28562 , H01L21/76856 , H01L21/76876 , H01L21/76877
摘要： PROBLEM TO BE SOLVED: To provide a method for depositing a tungsten film in which resistivity is reduced, the concentration of fluorine in the boundary part of a substrate with a barrier layer is reduced, and adhesion with the barrier layer can be improved.
SOLUTION: The method for depositing a tungsten film on the surface of a work M in a treatment vessel 14 capable of evacuation comprises: a stage where a silicon-containing gas is fed to the work; and a stage where, after the above stage, a tungsten-containing gas feeding step of feeding a tungsten-containing gas and a hydrogen compound gas feeding step of feeding a hydrogen compound gas which does not contain silicon are alternately repeated in such a manner that a purge step of feeding an inert gas into the treatment vessel and/or an evacuation step of evacuating the treatment vessel are interposed between both the steps.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：为了提供一种沉积电阻率降低的钨膜的方法，具有阻挡层的衬底的边界部分中的氟浓度降低，并且可以改善与阻挡层的粘合性。解决方案：在能够排空的处理容器14中在工件M的表面上沉积钨膜的方法包括：将含硅气体供给到工件的阶段; 并且在上述阶段之后，交替地重复供给含钨气体的含钨气体进料步骤和供给不含硅的氢化合物气体的氢化合物气体进料步骤，使得将惰性气体进料到处理容器中和/或抽空处理容器的排气步骤的清洗步骤插入在两个步骤之间。版权所有（C）2007，JPO＆INPIT

5. 发明专利

JP2011068513A Film formation method of carbon nanotube film 审中-公开
标题翻译：碳纳米管膜的膜形成方法
公开(公告)号：JP2011068513A
公开(公告)日：2011-04-07
申请号：JP2009220370
申请日：2009-09-25
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： MATSUMOTO TAKASHI , SUGIURA MASAHITO , KOIZUMI KENJIRO , KASHIWAGI YUSAKU
IPC分类号： C01B31/02
CPC分类号： B82Y30/00 , B82Y40/00 , C01B32/16 , C23C16/0245 , C23C16/26
摘要： PROBLEM TO BE SOLVED: To provide a film formation method of a carbon nanotube film capable of forming a high-density carbon nanotube film of low defect by forming a lower layer catalytic metal into a fine particle and a high-density.
SOLUTION: A processed substrate on the surface of which a metal catalyst layer is formed is prepared (process 1), oxygen plasma treatment is given to the metal catalyst layer (process 2), the surface of the metal catalyst layer is activated by giving hydrogen containing plasma treatment to the metal catalyst layer after the oxygen plasma treatment (process 3), and then a carbon nanotube film is formed on the metal catalyst layer by plasma CVD (process 5).
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：为了提供能够通过将低层催化金属形成为细颗粒并且高密度形成低缺陷的高密度碳纳米管膜的碳纳米管膜的成膜方法。解决方案：制备其表面上形成金属催化剂层的处理衬底（工艺1），对金属催化剂层进行氧等离子体处理（工艺2），金属催化剂层的表面被激活通过在氧等离子体处理后对金属催化剂层进行含氢等离子体处理（工序3），然后通过等离子体CVD在金属催化剂层上形成碳纳米管膜（工序5）。版权所有（C）2011，JPO＆INPIT

6. 发明专利

JP2009088281A Low-k insulating film forming method, and low-k insulating film 审中-公开
标题翻译：低K绝缘膜成型方法和低K绝缘膜
公开(公告)号：JP2009088281A
公开(公告)日：2009-04-23
申请号：JP2007256493
申请日：2007-09-28
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： SUGIURA MASAHITO , ITO HITOSHI
IPC分类号： H01L21/312 , H01L21/768
摘要： PROBLEM TO BE SOLVED: To provide a method for forming a good-quality low-k insulating film.
SOLUTION: First, application liquid R obtained by dispersing a hollow structure group consisting of at least one of Si, N, C, O, and H elements into solution as an insulating film forming material is applied to a substrate to form an application film 4. Subsequently, the substrate is heated to bake the application film to form the porous low-k insulating film. In this method, a material originally having cavities is dispersed into the solution as the insulating film forming material to form the low-k insulating film with lower density. The insulating film has pores formed in the cavities having chemically bonded shells, and so it has high mechanical strength.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供形成优质低k绝缘膜的方法。解决方案：首先，将通过将由Si，N，C，O和H元素中的至少一种构成的中空结构体分散到作为绝缘膜形成材料的溶液中得到的涂布液R施加到基材上，随后，加热基板以烘烤涂膜以形成多孔低k绝缘膜。在该方法中，将原来具有空腔的材料作为绝缘膜形成材料分散在溶液中，以形成低密度的低k绝缘膜。绝缘膜具有在具有化学键合的壳体的空腔中形成的孔，因此具有高的机械强度。版权所有（C）2009，JPO＆INPIT

7. 发明专利

JP2002370059A Film-forming method and film-forming device 有权
标题翻译：薄膜成型方法和成膜装置
公开(公告)号：JP2002370059A
公开(公告)日：2002-12-24
申请号：JP2002032039
申请日：2002-02-08
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： KONISHI NOBUO , IWASHITA MITSUAKI , ONO HIROKI , KAWAMURA SHIGERU , SUGIURA MASAHITO
IPC分类号： B05D1/38 , B01J19/00 , B01J19/08 , B01J19/10 , B01J19/12 , B05C9/10 , B05C9/12 , B05C11/08 , B05D1/40 , B05D3/04 , H01L21/316 , H01L21/768 , H01L23/522
摘要： PROBLEM TO BE SOLVED: To provide a film-forming method and a film-forming device capable of enhancing an adhering property between films such as layer-to-layer insulation films having a low dielectric constant or between the layer-to-layer insulation films and other adjacent films.
SOLUTION: The film-forming method is provided with a step for applying a reforming treatment onto a surface of a porous or non-porous low dielectric constant insulation film 46 formed on a substrate; and a step for forming the insulation film 47, as an etching mask or a CMP stopper, on the surface of the porous or non-porous low dielectric constant insulation film 46 applied with the reforming treatment. A surface roughness of the porous or non-porous low dielectric constant insulation film 46 is increased for example, by irradiating plasma as the reforming treatment. Thereby, the adhering property between the films each other or between the layer-to-layer insulation films and other adjacent films each other can be enhanced by an anchor effect.
COPYRIGHT: (C)2003,JPO
摘要翻译：要解决的问题：为了提供能够提高诸如具有低介电常数的层间绝缘膜之间的膜之间或层间绝缘膜之间的粘附性的成膜方法和成膜装置和其他相邻的胶片。解决方案：成膜方法具有将重整处理施加到形成在基板上的多孔或无孔低介电常数绝缘膜46的表面上的步骤; 以及在施加了重整处理的多孔或无孔低介电常数绝缘膜46的表面上形成作为蚀刻掩模或CMP阻挡层的绝缘膜47的步骤。多孔或非多孔低介电常数绝缘膜46的表面粗糙度例如通过照射等离子体作为重整处理而增加。由此，可以通过锚效应来提高膜之间彼此之间或层间绝缘膜与其它相邻膜之间的粘合性。

8. 发明专利

JP2000323554A PROCESSING APPARATUS 失效
公开(公告)号：JP2000323554A
公开(公告)日：2000-11-24
申请号：JP13475399
申请日：1999-05-14
申请人： TOKYO ELECTRON LTD
发明人： KIRYU HIDEKI , JINRIKI HIROSHI , SUGIURA MASAHITO
IPC分类号： H01L21/677 , C23C14/56 , C23C16/54 , H01L21/68
摘要： PROBLEM TO BE SOLVED: To obtain a processing apparatus which can improve its throughput. SOLUTION: A preliminary processing chamber 120 is positioned in the upper part of a vacuum transfer chamber 102 of a processing apparatus 100. A carrier base 124 disposed within the preliminary processing chamber 120 is raised or lowered by vertical movement of an elevator shaft 128 together with an elevator plate 126. The carrier base 124 or the like is positioned in a region, where downward movement of the base will not block rotational movement of a transfer arm 106 upon its retracting operation, and a vacuum transfer chamber 102 is positioned correspondingly. The carrier base 124 upon its downward movement is positioned in a transfer path for transfer of a wafer W to a first vacuum processing chamber 108 and exchange the wafer W with the arm 106. At upward movement of the carrier base 124, the wafer W on the base 124 is subjected to a preliminary process. Since a second vacuum processing chamber 110 is provided around the vacuum transfer chamber 102 in place of the preliminary processing chamber, the number of processing steps in a processing apparatus 100 can be increased, so that its production efficiency is increased.

9. 发明专利

JP2000087244A FILM FORMING DEVICE AND FORMATION OF FILM 失效
公开(公告)号：JP2000087244A
公开(公告)日：2000-03-28
申请号：JP27435498
申请日：1998-09-10
申请人： TOKYO ELECTRON LTD
发明人： SUGIURA MASAHITO , JINRIKI HIROSHI
IPC分类号： H01L21/31 , C23C16/40 , C23C16/44 , C23C16/455
摘要： PROBLEM TO BE SOLVED: To provide a film forming device suppressing the quantity of reaction by- products contained in a film and capable of improving the dielectric strength or the like thereof by narrowing the jetting region of a metal-contg. gaseous starting material and increasing the jetting velocity thereof. SOLUTION: This film forming device is the one in which metal-contg. gaseous starting material and oxidizing gas are fed to a shower head part 60 disposed at the ceiling part in a treating vessel 16, and both gases are introduced into the treating vessel respectively from gaseous starting material jetting holes 68 and oxidizing gas jetting holes 70 arranged on the gas jetting face 66 at the lower face of the shower head part to form a metal-contg. film on the surface of the body W to be treated placed on the placing stand 30 in the treating vessel. In this case, the forming region of the gaseous starting material jetting holes is made smaller than the area corresponding to the upper face of the body to be treated on the placing stand to increase the jetting velocity of the metal-contg. gaseous starting material from the gaseous starting material jetting holes. In this way, the jetting region of the metal-contg. gaseous starting material is made narrow to increase the jetting velocity thereof, and the quantity of the reaction by-products contained in the film is suppressed to improve the dielectric strength or the like thereof.

10. 发明专利

JPH1079377A FILM FORMING AND MODIFICATION COLLECTING DEVICE 失效
公开(公告)号：JPH1079377A
公开(公告)日：1998-03-24
申请号：JP13025897
申请日：1997-05-02
申请人： TOKYO ELECTRON LTD
发明人： JINRIKI HIROSHI , SUGIURA MASAHITO
IPC分类号： C23C16/40 , C23C16/44 , H01L21/205 , H01L21/31 , H01L21/316
摘要： PROBLEM TO BE SOLVED: To provide a film forming and modification collecting device, in which a metallic oxide film is formed and modified continuously, a film forming rate and a modification rate are enhanced and the throughput of the whole can be ameliorated largely. SOLUTION: The film forming and modification collecting device is constituted so as to have a film forming device 4 forming a metallic oxide film in a vacuum atmosphere in the presence of a metallic oxide film raw material under an evaporated state and alcohol under the evaporated state to a body to be treated W, a modification device 6 improving the metallic oxide film by exposing the metallic oxide film in active oxygen atoms under the vacuum atmosphere, and a common shifting chamber 8 being connected in common with the film forming device and the improving device and shifting the body to be treated between the above-mentioned film forming device and the above- mentioned modification device while maintaining a vacuum state. Accordingly, both a film forming rate and an improving rate are enhanced, and the throughput of the whole is ameliorated.

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