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1. 发明专利

JP2003297802A Substrate treatment device and substrate treatment method 审中-公开
标题翻译：基板处理装置和基板处理方法
公开(公告)号：JP2003297802A
公开(公告)日：2003-10-17
申请号：JP2002094201
申请日：2002-03-29
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： KONISHI NOBUO , SHINDO NAOKI
IPC分类号： G03F7/30 , H01L21/027 , H01L21/306
摘要： PROBLEM TO BE SOLVED: To provide a substrate treatment device and a substrate treatment method. SOLUTION: In this method for etching a substrate by using an etchant E supplied to the surface WS of a substrate W, the etchant E contains a protective component Eb for protecting the surface WS from being etched, with the protective component Eb modified into an etching component Ee for etching the surface WS upon irradiation by light L. The protective component Eb is supplied to the surface WS by supplying the etchent E to the surface WS, and the protective component Eb is modified into the etching component Ee upon irradiation by the light L, thus enabling the etching of the surface WS. COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：提供一种基板处理装置和基板处理方法。解决方案：在通过使用提供给衬底W的表面WS的蚀刻剂E来蚀刻衬底的方法中，蚀刻剂E包含用于保护表面WS不被蚀刻的保护组分Eb，保护组分Eb被修饰成为用于在被光L照射时蚀刻表面WS的蚀刻部分Ee。通过向表面WS提供等离子体将保护成分Eb供给到表面WS，并且保护成分Eb在照射时被修改为蚀刻成分Ee 通过光L，从而能够蚀刻表面WS。版权所有（C）2004，JPO

2. 发明专利

JP2004327537A Method, equipment, and system for substrate processing 有权
标题翻译：用于基板处理的方法，设备和系统
公开(公告)号：JP2004327537A
公开(公告)日：2004-11-18
申请号：JP2003117130
申请日：2003-04-22
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： ONO HIROKI , KONISHI NOBUO , ORII TAKEHIKO
IPC分类号： G03F7/42 , H01L21/027 , H01L21/304
摘要： PROBLEM TO BE SOLVED: To provide a method of processing a substrate which is capable of removing a resist film hard of detachment without causing damage to the substrate or a film serving as the underlying material of the resist film.
SOLUTION: A wafer W is equipped with a resist cured film 79 formed through an ion implantation process, and the wafer W is subjected to processing so as to expose the resist cured film 79 to water vapor kept at a prescribed temperature, whereby the the resist cured film 79 is popped out (step 4). By this setup, craters 88 are formed in the cured layer 79a of the resist cured film 79, and uncured parts 79b are exposed inside the cured layer 79a. The wafer W is dried out (step 5), then the wafer W is processed with processing gas containing ozone and water vapor, whereby the uncured resist parts 79b are turned water-soluble (step 6). Thereafter, the wafer W is rinsed with water to remove the resist cured film 79 from it (step 7).
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种处理基板的方法，该基板能够在不损害基板或用作抗蚀剂膜的下层材料的膜的情况下去除强度分离的抗蚀剂膜。解决方案：晶片W配备有通过离子注入工艺形成的抗蚀剂固化膜79，并且对晶片W进行加工以将抗蚀剂固化膜79暴露于保持在规定温度的水蒸气，由此弹出抗蚀剂固化膜79（步骤4）。通过该设置，在抗蚀剂固化膜79的固化层79a中形成有凹坑88，未固化部79b暴露在固化层79a的内部。将晶片W干燥（步骤5），然后用含有臭氧和水蒸汽的处理气体处理晶片W，由此将未固化的抗蚀剂部分79b转变为水溶性（步骤6）。此后，用水冲洗晶片W以从其中除去抗蚀剂固化膜79（步骤7）。版权所有（C）2005，JPO＆NCIPI

3. 发明专利

JP2002370059A Film-forming method and film-forming device 有权
标题翻译：薄膜成型方法和成膜装置
公开(公告)号：JP2002370059A
公开(公告)日：2002-12-24
申请号：JP2002032039
申请日：2002-02-08
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： KONISHI NOBUO , IWASHITA MITSUAKI , ONO HIROKI , KAWAMURA SHIGERU , SUGIURA MASAHITO
IPC分类号： B05D1/38 , B01J19/00 , B01J19/08 , B01J19/10 , B01J19/12 , B05C9/10 , B05C9/12 , B05C11/08 , B05D1/40 , B05D3/04 , H01L21/316 , H01L21/768 , H01L23/522
摘要： PROBLEM TO BE SOLVED: To provide a film-forming method and a film-forming device capable of enhancing an adhering property between films such as layer-to-layer insulation films having a low dielectric constant or between the layer-to-layer insulation films and other adjacent films.
SOLUTION: The film-forming method is provided with a step for applying a reforming treatment onto a surface of a porous or non-porous low dielectric constant insulation film 46 formed on a substrate; and a step for forming the insulation film 47, as an etching mask or a CMP stopper, on the surface of the porous or non-porous low dielectric constant insulation film 46 applied with the reforming treatment. A surface roughness of the porous or non-porous low dielectric constant insulation film 46 is increased for example, by irradiating plasma as the reforming treatment. Thereby, the adhering property between the films each other or between the layer-to-layer insulation films and other adjacent films each other can be enhanced by an anchor effect.
COPYRIGHT: (C)2003,JPO
摘要翻译：要解决的问题：为了提供能够提高诸如具有低介电常数的层间绝缘膜之间的膜之间或层间绝缘膜之间的粘附性的成膜方法和成膜装置和其他相邻的胶片。解决方案：成膜方法具有将重整处理施加到形成在基板上的多孔或无孔低介电常数绝缘膜46的表面上的步骤; 以及在施加了重整处理的多孔或无孔低介电常数绝缘膜46的表面上形成作为蚀刻掩模或CMP阻挡层的绝缘膜47的步骤。多孔或非多孔低介电常数绝缘膜46的表面粗糙度例如通过照射等离子体作为重整处理而增加。由此，可以通过锚效应来提高膜之间彼此之间或层间绝缘膜与其它相邻膜之间的粘合性。

4. 发明专利

JP2004096086A Treatment equipment and processing method 有权
公开(公告)号：JP2004096086A
公开(公告)日：2004-03-25
申请号：JP2003190174
申请日：2003-07-02
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： IWASHITA MITSUAKI , KONISHI NOBUO
IPC分类号： H01L21/3065 , H01L21/027 , H01L21/304 , H01L21/31
摘要： PROBLEM TO BE SOLVED: To prevent exfoliation of an upper layer film when polishing is performed in a post-treatment. SOLUTION: An almost U-shaped film removing member 80 is arranged in coating treatment equipment. A plasma radiation part 84 is arranged on a ceiling surface inside the film removing member 80, and a suction opening 85 is arranged on a side surface. An outer peripheral part of a wafer W wherein a coating film is formed on a surface is inserted inside the film removing member 80, and a wafer W is rotated. An end portion of an outer peripheral film R on the wafer W is irradiated with a plasma simultaneously with suction from the suction opening 85. The emitted plasma is made to flow to the suction opening 85 side and brought into contact with the end portion of an outer peripheral film R, and the end potion is corroded, so that an inclinated part K is formed on the end portion of the outer peripheral film R. As a result, a hard mask or the like as the upper layer film is formed later, and the hard mask is not exfoliated since no concentrated load is applied to the end portion even if a load is applied to the end portion of the outer peripheral film R by an abrasive pad after formation of the hard mask. COPYRIGHT: (C)2004,JPO

5. 发明专利

JP2003084456A Film forming method and film forming apparatus 审中-公开
标题翻译：薄膜成型方法和薄膜成型装置
公开(公告)号：JP2003084456A
公开(公告)日：2003-03-19
申请号：JP2002134739
申请日：2002-05-09
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： KONISHI NOBUO , IWASHITA MITSUAKI
IPC分类号： G03F7/38 , B05C11/08 , B05D1/40 , B05D3/06 , B05D7/00 , B05D7/24 , G03F7/40 , H01L21/02 , H01L21/027 , H01L21/768
摘要： PROBLEM TO BE SOLVED: To simplify a semiconductor production process steps by using a resist for silylation in pattern formation of an insulation film and subjecting the resist to a silylation process. SOLUTION: After applying a resist 202 for silylation on a semi-conductor substrate, the resist 202 is pattern wise exposed. Then a silylation processing is performed to form a silylated layer 204 and the silylated layer 204 is hardened with performing an electron beam processing or a UV processing. After that, an etching is performed using the hardened silylated layer 204 as a mask and a wiring step is taken without removing the hardened silylated layer as a stopper for chemical mechanical polishing. With this embodiment, the patterning steps of an insulation film can be simplified.
摘要翻译：要解决的问题：为了简化半导体制造工艺步骤，通过在绝缘膜的图案形成中使用用于甲硅烷基化的抗蚀剂并使抗蚀剂进行甲硅烷基化方法。解决方案：在半导体衬底上涂覆抗硅烷化硅甲硅烷化后，抗蚀剂202图案地露出。然后进行甲硅烷基化处理以形成甲硅烷基化层204，并且通过进行电子束处理或UV处理使甲硅烷基化层204硬化。之后，使用硬化的甲硅烷基化层204作为掩模进行蚀刻，并且在不除去硬化的甲硅烷基化层作为化学机械抛光的阻挡物的情况下进行布线步骤。利用该实施例，可以简化绝缘膜的图案化步骤。

6. 发明专利

JP2003001177A Film forming device and method for forming film 审中-公开
标题翻译：膜形成装置和形成膜的方法
公开(公告)号：JP2003001177A
公开(公告)日：2003-01-07
申请号：JP2001191008
申请日：2001-06-25
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： KONISHI NOBUO , OMORI TSUTAE , IWASHITA MITSUAKI
IPC分类号： G03F7/16 , B05C11/08 , B05C15/00 , B05D3/04 , B05D7/00 , H01L21/027 , H01L21/31 , H01L21/312
摘要： PROBLEM TO BE SOLVED: To provide a method for forming a film having a predetermined thickness in a broader film thickness range using a few kinds of coating solution, and to provide a film forming device. SOLUTION: A film treatment unit (SCT) 11 which is one of embodiments of the film forming device has a spin chuck 61 to hold a wafer W, a chemicals supplying hole 72a to supply the chemicals to the wafer W, a treatment chamber 70 comprising an under cup 62 and a cover body 71 to accommodate a substrate held by the chuck 61 and a solvent vapor supplying hole 72b to supply a solvent vapor which suppresses drying of the chemicals to the chamber 70. Drying of the chemicals coated on the wafer W is suppressed by controlling the vapor concentration of the solvent in the chamber 70 to control the thickness of a film formed on the wafer W. Even if one kind of chemicals is thus used, the film with a predetermine thickness can be obtained in a broader film thickness range.
摘要翻译：要解决的问题：提供一种使用几种涂布溶液在更宽的膜厚范围内形成具有预定厚度的膜的方法，并提供成膜装置。解决方案：作为成膜装置的一个实施例的膜处理单元（SCT）11具有用于保持晶片W的旋转卡盘61，向晶片W供应化学品的化学品供给孔72a，包括底杯62和盖主体71，以容纳由卡盘61保持的基板和溶剂蒸气供应孔72b，以提供抑制化学物质干燥到室70的溶剂蒸气。干燥涂覆在晶片W上的化学品通过控制室70中的溶剂的蒸汽浓度来抑制在晶片W上形成的膜的厚度。即使使用一种化学品，也可以在较宽的膜中获得具有预定厚度的膜厚度范围。

7. 发明专利

JP2004319990A Substrate processing method and substrate processing equipment 有权
标题翻译：基板加工方法和基板加工设备
公开(公告)号：JP2004319990A
公开(公告)日：2004-11-11
申请号：JP2004094917
申请日：2004-03-29
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： KONISHI NOBUO , TOSHIMA TAKAYUKI , ORII TAKEHIKO
IPC分类号： G02F1/13 , G02F1/1333 , H01L21/304
摘要： PROBLEM TO BE SOLVED: To provide a substrate processing method and processing equipment thereof, in which even if any hydrophobic surface comes out on a surface of a processed substrate by supplying a few volume of chemical on the processed substrate, it is possible to form a liquid film without generating any droplet causing a particle.
SOLUTION: The substrate processing method comprises the steps of: supplying a chemical(DHF) 65 to a rotating wafer W by a chemical nozzle 61 moving in a radial of the wafer W to form a chemical film; supplying purified water 66 from a purified water nozzle 62 passing through the same radius position on the wafer following to the chemical nozzle 61, before the chemical changes to the droplet by an exposure of the hydrophobic surface to form a mixed liquor film of the chemical and the purified water on a whole surface of the wafer; and supplying the purified water from the purified water nozzle to remove the mixed liquor.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种基板处理方法及其加工设备，其中即使通过在处理的基板上提供少量化学物质而在处理的基板的表面上出现任何疏水表面，也是可能的以形成液膜而不产生任何引起颗粒的液滴。基板处理方法包括以下步骤：通过在晶片W的径向移动的化学喷嘴61向旋转晶片W提供化学物质（DHF）65以形成化学膜; 在经过化学喷嘴61之后穿过晶片上的相同半径位置的净化水喷嘴62中，通过暴露该疏水表面而化学变为液滴以形成化学品的混合液体膜，并且在晶片的整个表面上的净化水; 并从净化水喷嘴供给净化水以除去混合液。版权所有（C）2005，JPO＆NCIPI

8. 发明专利

JP2001085294A DEVELOPING DEVICE 失效
公开(公告)号：JP2001085294A
公开(公告)日：2001-03-30
申请号：JP25587099
申请日：1999-09-09
申请人： TOKYO ELECTRON LTD
发明人： KONISHI NOBUO , TOSHIMA TAKAYUKI
IPC分类号： H01L21/027 , G03F7/30
摘要： PROBLEM TO BE SOLVED: To provide a developing device capable of performing excellent development by solving various problems produced when a developer is placed on a wafer by a scanning method. SOLUTION: This developing device includes a wafer holding part 2 for horizontally holding a wafer 1 and a developer supply unit 13 moving in a horizontal direction and supplying a developer on the wafer 1. The developer supply unit 13 is a developing apparatus including: a developer guide plate 15 which is held in a state where its bottom end is opposed to the wafer 1 with a predetermined gap therebetween and whose one surface is held with in opposition to the direction in which the developer supply unit 13 moves; and a developer supply system 25 which supplies the developer to the top portion of the one surface of the developer guide plate 15 to make the developer flow along the developer guide plate 15 to supply the developer to the wafer 1 from the bottom end of the developer guide plate 15 to the wafer 1.

9. 发明专利

JPH11238714A METHOD OF CLEANING 失效
公开(公告)号：JPH11238714A
公开(公告)日：1999-08-31
申请号：JP5600298
申请日：1998-02-20
申请人： TOKYO ELECTRON LTD
发明人： KONISHI NOBUO , HIROSE KEIZO , SEKIGUCHI KENJI
IPC分类号： B08B3/02 , H01L21/304
摘要： PROBLEM TO BE SOLVED: To eliminate variations in cleaning on an in-plane of a wafer by varying the rotating revolutions of a wafer or a cleaning brush on the plane face of the wafer. SOLUTION: A wafer (W) is rotated by a substrate holding part 2 in a horizontal direction. First and second brushes 41 and 61 are put in contact with the main and rear face of the wafer (W). The brushes 41 and 61 are rotated around a vertical axis at given number of revolutions, and at the same time, the brushes 41 and 61 are moved from the center to the boundary edge part of the wafer (W). The wafer (W) is rotated at a rpm, where a is 50 to 1,000, for cleaning the central part thereof, while the wafer (W) for example is rotated at a/10 rpm for cleaning the boundary edge part of the wafer (W). In this way the circumferential speed of cleaning is made to vary for each cleaning position, so that the wafer speed with respect to the cleaning brushes 41 and 61 becomes constant, thereby making the cleaning performance for the wafer (W) almost uniform.

10. 发明专利

JPH10321493A FORMATION OF RESIST FILM AND SUBSTRATE TREATING DEVICE 失效
公开(公告)号：JPH10321493A
公开(公告)日：1998-12-04
申请号：JP14455297
申请日：1997-05-20
申请人： TOKYO ELECTRON LTD
发明人： TOSHIMA TAKAYUKI , KONISHI NOBUO
IPC分类号： H01L21/027 , G03F7/16
摘要： PROBLEM TO BE SOLVED: To uniformly form a resist film on the surface of a substrate, even when the surface has recessing and projecting sections or steps. SOLUTION: A resist film 3 is applied to top sections 1 and bottom sections 2 forming recessing and projecting sections on the surface of a wafer, so that the thickness of the resist film may become thicker than a desired value. Then, a decomposed layer 3a having the desired thickness is formed on the top sections 1 and bottom sections by simultaneously heating the lower surface side of the wafer W and cooling the upper surface side of the wafer W while the resist film 3 is in a wet state. When the nondecomposed layer 3b of the resist layer 3 is removed thereafter, a resist film having the desired thickness is formed uniformly on the top and bottom sections 1 and 2.

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