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1. 发明专利

JP2014150288A Bonding device, bonding system, bonding method, program and computer storage medium 有权
标题翻译：接合装置，接合系统，接合方法，程序和计算机存储介质
公开(公告)号：JP2014150288A
公开(公告)日：2014-08-21
申请号：JP2014100221
申请日：2014-05-14
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： OKADA SHINJI , SHIRAISHI MASATOSHI , DEGUCHI MASATOSHI , YOSHITAKA NAOTO , SUGIHARA SHINTARO , MATSUNAGA MASATAKA
IPC分类号： H01L21/02 , H01L21/677
摘要： PROBLEM TO BE SOLVED: To suppress occurrence of warpage or distortion in a wafer bonded to a support substrate.SOLUTION: A bonding device 30 for bonding a processed wafer W and a support wafer S includes a processing container 100 the interior of which can be sealed, a bonding section 113 for bonding the processed wafer W and support wafer S by pressing while adjusting to a predetermined temperature, and a delivery arm 120 as a superposed substrate temperature control section for adjusting the temperature of the support wafer S before bonding and the processed wafer W before bonding, and adjusting the temperature of a superposed wafer T bonded in the bonding section 113 to normal temperature of 50°C or less. The bonding section 113 and the delivery arm 120 are arranged in the processing container 100.
摘要翻译：要解决的问题：抑制与支撑基板接合的晶片的翘曲或变形的发生。解决方案：用于接合加工晶片W和支撑晶片S的接合装置30包括处理容器100，处理容器100的内部可以被密封，用于通过在调节到预定温度的同时按压处理的晶片W和支撑晶片S的接合部分113和作为叠加的基板温度控制部分的输送臂120，用于在接合之前调节支撑晶片S的温度并且被处理接合之前的晶片W，并且将在接合部113中接合的叠置晶片T的温度调节到常温为50℃以下。接合部113和输送臂120配置在处理容器100内。

2. 发明专利

JP2012146756A Exfoliation system, exfoliation method, program and computer storage medium 有权
标题翻译： EXFOLIATION系统，EXFOLIATION方法，程序和计算机存储介质
公开(公告)号：JP2012146756A
公开(公告)日：2012-08-02
申请号：JP2011002561
申请日：2011-01-07
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： YOSHITAKA NAOTO , IWASHITA TAIJI , MATSUNAGA MASATAKA
IPC分类号： H01L21/02 , H01L21/304 , H01L21/677 , H01L21/683 , H01L27/12
CPC分类号： H01L21/02002 , B32B38/10 , B32B43/006 , H01L21/67051 , H01L21/67092 , H01L21/67103 , H01L21/68728 , Y10T156/1132 , Y10T156/19 , Y10T156/1944
摘要： PROBLEM TO BE SOLVED: To restrain particles generated when a processed substrate and a support substrate are separated by an exfoliation process from spreading to the outside of an exfoliation apparatus.SOLUTION: An exfoliation system 1 includes a carry-in/carry-out station 2 which carries a wafer to be processed W, a support wafer S or a polymerization wafer T in and out of place, an exfoliation processing station 3 which executes prescribed processing on the wafer to be processed W, the support wafer S and the polymerization wafer T, and a transport station 7 installed between the carry-in/carry-out station 2 and the exfoliation processing station 3. The exfoliation processing station 3 includes an exfoliation apparatus 30 which exfoliates the polymerization wafer T, a first cleaning device 31 and a second cleaning device 33. The internal pressure of the transport station 7 is a positive pressure with respect to the internal pressure of the exfoliation apparatus 30, the internal pressure of the first cleaning device 31 and the internal pressure of the second cleaning device 33.
摘要翻译：待解决的问题：为了抑制经处理的基板和支撑基板通过剥离工艺分离而产生的颗粒扩散到剥离装置的外部。解决方案：剥离系统1包括承载待处理晶片W的进入/进出站2，支撑晶片S或聚合晶片T进出的位置，剥离处理站3 对待处理的晶片W，支撑晶片S和聚合晶片T执行规定的处理，以及安装在进/出站2和剥离处理站3之间的传送站7.剥离处理站3 包括剥离聚合晶片T的剥离装置30，第一清洁装置31和第二清洁装置33.输送站7的内部压力相对于剥离装置30的内部压力为正压力，内部第一清洁装置31的压力和第二清洁装置33的内部压力。版权所有：（C）2012，JPO＆INPIT

3. 发明专利

JP2012069906A Joining device, joining method, program, and computer storage medium 审中-公开
标题翻译：加工设备，接合方法，程序和计算机存储介质
公开(公告)号：JP2012069906A
公开(公告)日：2012-04-05
申请号：JP2011069461
申请日：2011-03-28
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： HIRAKAWA OSAMU , YOSHITAKA NAOTO , MATSUNAGA MASATAKA , OKAMOTO NORIHIKO
IPC分类号： H01L21/02 , H01L21/677 , H01L27/12
摘要： PROBLEM TO BE SOLVED: To improve throughput of a joining process while properly joining a processed substrate to a support substrate.SOLUTION: A joining device 700 has: a delivery part 720 for delivering a processed wafer W, a support wafer S, and a superposed wafer T; a turnover part 721 for turning over front and rear surfaces of the processed wafer W or the support wafer S; a joining part 101 for pressing and joining the processed wafer W and the support wafer S; and a transfer part 722 for transferring the processed part W, the support wafer S, and the superposed wafer T. The turnover part 721 has: a holding member for holding the support wafer S or the processed wafer W; a moving mechanism for rotating the support wafer S or the processed wafer W, which is held by the holding member, around a horizontal axis and moving the support wafer S or the processed wafer W in the vertical direction and the horizontal direction; and a position adjusting mechanism 770 for adjusting the orientation of the support wafer S or the processed wafer W, which is held by the holding member, in the horizontal direction.
摘要翻译：要解决的问题：为了提高接合工艺的生产率，同时将经处理的基板正确地连接到支撑基板。解决方案：接合装置700具有：用于输送经处理的晶片W的输送部720，支撑晶片S和叠置的晶片T; 用于翻转处理晶片W或支撑晶片S的前表面和后表面的翻转部分721; 用于挤压和接合处理晶片W和支撑晶片S的接合部分101; 以及用于传送加工部分W，支撑晶片S和叠置晶片T的转印部分722.转换部分721具有：用于保持支撑晶片S或处理晶片W的保持部件; 用于使由支撑构件保持的支撑晶片S或被处理晶片W绕水平轴线旋转并使支撑晶片S或处理晶片W沿垂直方向和水平方向移动的移动机构; 以及位置调整机构770，用于调整由保持构件保持的支撑晶片S或被处理晶片W在水平方向上的取向。版权所有（C）2012，JPO＆INPIT

4. 发明专利

JP2012069900A Joining system, substrate processing system, joining method, program, and computer storage medium 有权
标题翻译：接合系统，基板处理系统，接合方法，程序和计算机存储介质
公开(公告)号：JP2012069900A
公开(公告)日：2012-04-05
申请号：JP2011002549
申请日：2011-01-07
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： HIRAKAWA OSAMU , YOSHITAKA NAOTO , MATSUNAGA MASATAKA , OKAMOTO NORIHIKO
IPC分类号： H01L21/02 , H01L21/677
CPC分类号： H01L21/673 , H01L21/67092 , H01L21/6715 , H01L21/67748 , H01L21/68707 , Y10T156/10 , Y10T156/15 , Y10T156/1744
摘要： PROBLEM TO BE SOLVED: To efficiently join a processed substrate to a support substrate and improve throughput of the joining processing.SOLUTION: A joining system 1 has a carry-in/out station 2 carrying in and out a processed wafer W, a support wafer S, or a superposed wafer T to a joining processing station 3, and the joining processing station 3 performing predetermined processes on the processed wafer W and the support wafer S. The joining processing station 3 has: an application device 40 applying an adhesive to the processed wafer W; first thermal treatment devices 41 to 43 heating the processed wafer W to a first temperature; second thermal treatment devices 44 to 46 further heating the processed wafer W to a second temperature; turnover devices 34 to 37 turning over front and rear surfaces of the support wafer S; joining devices 30 to 33 joining the processed wafer W to the support wafer S; and a wafer transport area 60 transporting the processed wafer W, the support wafer S or the superposed wafer T to the each device.
摘要翻译：要解决的问题：为了有效地将经处理的基板连接到支撑基板，并提高接合处理的生产率。解决方案：接合系统1具有将加工晶片W，支撑晶片S或重叠晶片T输入和输出到接合处理站3的入口/出站站2和接合处理站3 对经处理的晶片W和支撑晶片S执行预定的处理。接合处理站3具有：施加装置40，将粘合剂施加到处理晶片W; 第一热处理装置41至43将加工的晶片W加热到第一温度; 第二热处理装置44至46进一步将经处理的晶片W加热至第二温度; 翻转装置34至37翻转支撑晶片S的前表面和后表面; 将加工晶片W接合到支撑晶片S的接合装置30〜33; 以及将处理后的晶片W，支撑晶片S或重叠晶片T输送到各个器件的晶片输送区域60。版权所有（C）2012，JPO＆INPIT

5. 发明专利

JP2014063791A Joining system, joining method, program, and computer storage medium 审中-公开
标题翻译：接合系统，接合方法，程序和计算机存储介质
公开(公告)号：JP2014063791A
公开(公告)日：2014-04-10
申请号：JP2012206555
申请日：2012-09-20
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： DEGUCHI MASATOSHI , YOSHITAKA NAOTO , MATSUNAGA MASATAKA
IPC分类号： H01L21/02 , H01L21/683
CPC分类号： H01L21/67092 , H01L21/67109 , H01L21/6715 , H01L21/6719 , H01L21/681
摘要： PROBLEM TO BE SOLVED: To reduce an occupation area of a joining system while appropriately joining a processed substrate and a support substrate in the joining system.SOLUTION: A joining system 1 comprises a carrying-in/out station 2 and a processing station 3. The processing station 3 comprises: an application device 60 which applies an adhesive to a processed wafer W; thermal treatment devices 61 to 66 which thermally treat the processed wafer W applied with the adhesive; a position adjustment device 52 which adjusts a position of the thermally treated wafer W and a position of a support wafer S, and inverts front and rear surfaces of the support wafer S; a plurality of joining devices 40 and 41 which join the processed wafer W and the support wafer S whose positions were adjusted via the adhesive, by pressing; and wafer transportation regions 42 and 67 for transporting the processed wafer W, the support wafer S, and a superposed wafer T.
摘要翻译：要解决的问题：为了减少接合系统的占用面积，同时适当地将加工基板和支撑基板接合在接合系统中。解决方案：接合系统1包括进/出站2和处理站3。处理站3包括：施加装置60，其向处理的晶片W施加粘合剂; 热处理装置61至66，其热处理施加有粘合剂的加工晶片W; 调整热处理晶片W的位置和支撑晶片S的位置的位置调整装置52，并且使支撑晶片S的前表面和后表面反转; 多个接合装置40和41，其通过压制连接加工晶片W和其位置经由粘合剂调节的支撑晶片S; 以及用于输送处理晶片W，支撑晶片S和叠置晶片T的晶片输送区域42和67。

6. 发明专利

JP2012069905A Joining device, joining method, program, and computer storage medium 有权
标题翻译：加工设备，接合方法，程序和计算机存储介质
公开(公告)号：JP2012069905A
公开(公告)日：2012-04-05
申请号：JP2011069458
申请日：2011-03-28
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： HIRAKAWA OSAMU , YOSHITAKA NAOTO , MATSUNAGA MASATAKA , OKAMOTO NORIHIKO
IPC分类号： H01L21/02 , H01L21/683
摘要： PROBLEM TO BE SOLVED: To improve throughput of a joining process while properly joining a processed substrate to a support substrate.SOLUTION: A joining device 700 has: a delivery part 720; a turnover part 721 turning over front and rear surfaces of a processed wafer W or a support wafer S; a joining part 101 pressing and joining the processed wafer W and the support wafer S; and a transfer part 722 transferring the processed part W, the support wafer S, and a superposed wafer T. The transfer part 722 has a first transfer arm having an O-ring holding the rear surfaces of the processed wafer W, the support wafer, and the superposed wafer T, and a second transfer arm 781 having a second holding member for holding outer peripheral parts of the surfaces of the processed wafer W and the support wafer S. The second holding member has a placement part on which the outer peripheral parts of the surfaces of the processed wafer W and the support wafer S are placed, and a tapered part extending upward from the placement part and having an inner side surface which is expanded from the lower side to the upper side to form a tapered shape.
摘要翻译：要解决的问题：为了提高接合工艺的生产率，同时将经处理的基板正确地连接到支撑基板。
解决方案：接合装置700具有：输送部720; 翻转部分721翻转处理晶片W或支撑晶片S的前表面和后表面; 将处理后的晶片W和支撑晶片S按压接合的接合部101; 以及转印部分722，转印加工部分W，支撑晶片S和叠置的晶片T.转印部分722具有第一转印臂，其具有保持处理晶片W的后表面的O形环，支撑晶片，和叠置的晶片T，以及第二传送臂781，具有用于保持处理晶片W和支撑晶片S的表面的外围部分的第二保持部件。第二保持部件具有放置部，放置处理晶片W和支撑晶片S的表面，以及从放置部分向上延伸并具有从下侧向上侧膨胀形成锥形的内侧表面的锥形部分。版权所有（C）2012，JPO＆INPIT

7. 发明专利

JP2015046531A 接合システム有权
标题翻译：粘接系统
公开(公告)号：JP2015046531A
公开(公告)日：2015-03-12
申请号：JP2013177750
申请日：2013-08-29
申请人：東京エレクトロン株式会社 , Tokyo Electron Ltd
发明人： MATSUNAGA MASATAKA , YOSHITAKA NAOTO , NISHIMURA SATOSHI
IPC分类号： H01L21/02 , B05C11/08 , B05C11/10
CPC分类号： H01L21/67173 , B32B2457/14 , H01L21/67092 , H01L21/67109 , H01L21/68 , H01L24/75 , H01L2224/7515 , H01L2224/753 , H01L2224/7565 , H01L2224/75981 , H01L2924/06 , H01L2924/15788 , H01L2924/20106 , H01L2924/00
摘要：【課題】フットプリントを小さくすること。【解決手段】実施形態に係る接合システムは、第1処理ステーションと、第2処理ステーションと、搬入出ステーションとを備える。第1処理ステーションは、第1搬送領域と、塗布装置と、熱処理装置と、第1受渡ブロックとを備える。また、第2処理ステーションは、複数の接合装置と、第2搬送領域と、第2受渡ブロックとを備える。複数の接合装置は、第1基板と第2基板とを接合する。第2搬送領域は、複数の接合装置に対して第1基板および第2基板を搬送する領域である。第2受渡ブロックは、第1搬送領域と第2搬送領域との間で、第1基板、第2基板および重合基板の受け渡しを行う。【選択図】図3A
摘要翻译：要解决的问题：减少占用空间。根据一个实施例的接合系统包括第一处理站，第二处理站和进/出站。第一处理站包括第一传送区域，应用设备，热处理设备和第一传送块。第二处理站包括多个接合装置，第二传送区域和第二传送块。多个接合装置将第一基板和第二基板接合。第二转印区域是用于将第一基板和第二基板转印到多个接合装置的区域。第二递送块在第一转移区域和第二转移区域之间递送第一基板，第二基板和聚合基板。

8. 发明专利

JP2013236094A Exfoliation system, exfoliation method, program and computer storage medium 有权
标题翻译： EXFOLIATION系统，EXFOLIATION方法，程序和计算机存储介质
公开(公告)号：JP2013236094A
公开(公告)日：2013-11-21
申请号：JP2013140299
申请日：2013-07-04
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： YOSHITAKA NAOTO , IWASHITA TAIJI , MATSUNAGA MASATAKA
IPC分类号： H01L21/677 , H01L21/02 , H01L21/683
摘要： PROBLEM TO BE SOLVED: To restrain particles generated when a processed substrate and a support substrate are subjected to exfoliation processing by an exfoliation device from spreading to the outside of the exfoliation device.SOLUTION: An exfoliation system 1 comprises: a carry-in/carry-out station 2 which carries in and out a wafer W to be processed, a support wafer S or a polymerization wafer T; an exfoliation processing station 3 which executes prescribed processing on the wafer W to be processed, the support wafer S and the polymerization wafer T; and a transport station 7 installed between the carry-in/carry-out station 2 and the exfoliation processing station 3. The exfoliation processing station 3 comprises: an exfoliation apparatus 30 which exfoliates the polymerization wafer T; and a transport device 32. Pressure in the transport device 32 is positive pressure relative to pressure in the exfoliation apparatus 30.
摘要翻译：要解决的问题：为了抑制经处理的基板和支撑基板通过剥离装置进行剥离处理而产生的颗粒扩散到剥离装置的外部。解决方案：剥离系统1包括：进/出出站台2，其承载和取出要处理的晶片W，支撑晶片S或聚合晶片T; 对要处理的晶片W，支撑晶片S和聚合晶片T执行规定处理的剥离处理站3; 以及安装在进/出站2和剥离处理站3之间的运送站7.剥离处理站3包括：剥离聚合晶片T的剥离装置30; 输送装置32中的压力相对于剥离装置30中的压力为正压。

9. 发明专利

JP2012044086A Peeling system, peeling method, program, and computer storage medium 有权
标题翻译：剥离系统，剥离方法，程序和计算机存储介质
公开(公告)号：JP2012044086A
公开(公告)日：2012-03-01
申请号：JP2010185894
申请日：2010-08-23
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： HIRAKAWA OSAMU , YOSHITAKA NAOTO , MATSUNAGA MASATAKA , OKAMOTO NORIHIKO
IPC分类号： H01L21/02 , H01L21/304 , H01L21/677
CPC分类号： H01L21/02076 , B32B38/10 , B32B43/006 , H01L21/02057 , H01L21/67051 , H01L21/67092 , Y10T156/11 , Y10T156/1132 , Y10T156/1153 , Y10T156/1168 , Y10T156/19 , Y10T156/1911 , Y10T156/1944
摘要： PROBLEM TO BE SOLVED: To improve a throughput in the peeling processing by effectively performing the peeling processing for a substrate to be processed and a support substrate.SOLUTION: A peeling system 1 comprises: a carry-in/carry-out station 2 for carrying-in/carrying-out a wafer W to be processed, a support wafer S, or a polymerized wafer T from/to a peeling processing station 3; the peeling processing station 3 for performing a predetermined processing to the wafer W to be processed, the support wafer S, and the polymerized wafer T; and a first conveyance device 20 for conveying the wafer W to be processed, the support wafer S, or the polymerized wafer T between the carry-in/carry-out station 2 and the peeling processing station 3. The peeling processing station 3 comprises: a peeling device 30 for peeling the polymerized wafer T to the wafer W to be processed and the support wafer S; a first cleaning device 31 for cleaning the wafer W to be processed which has been peeled by the peeling device 30; and a second cleaning device 33 for cleaning the support wafer S which has been peeled by the peeling device 30.
摘要翻译：要解决的问题：通过有效地进行待处理基板的剥离处理和支撑基板来提高剥离处理中的通过量。解决方案：剥离系统1包括：搬运/搬运站2，用于从/从一个或多个托盘搬运/搬运要处理的晶片W，支撑晶片S或聚合晶片T 剥皮处理站3; 用于对要处理的晶片W进行预定处理的剥离处理站3，支撑晶片S和聚合晶片T; 以及用于输送进入/搬运站2和剥离处理站3之间的待处理晶片W，支撑晶片S或聚合晶片T.的第一输送装置20.剥离处理站3包括：用于将聚合晶片T剥离到待处理晶片W的剥离装置30和支撑晶片S; 用于清洗已经被剥离装置30剥离的待处理晶片W的第一清洁装置31; 以及用于清洁已经被剥离装置30剥离的支撑晶片S的第二清洁装置33.版权所有（C）2012，JPO＆INPIT

10. 发明专利

JP2013026260A Bonding system, substrate processing system, bonding method, program and computer storage medium 有权
标题翻译：接合系统，基板处理系统，接合方法，程序和计算机存储介质
公开(公告)号：JP2013026260A
公开(公告)日：2013-02-04
申请号：JP2011156437
申请日：2011-07-15
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： HIRAKAWA OSAMU , YOSHITAKA NAOTO , MATSUNAGA MASATAKA , OKAMOTO NORIHIKO
IPC分类号： H01L21/02 , H01L21/677
CPC分类号： H01L21/677 , H01L21/67092 , H01L21/67103
摘要： PROBLEM TO BE SOLVED: To enhance the throughput of bonding by performing the bonding of a processed substrate and a support substrate efficiently.SOLUTION: A bonding system 1 has a loading/unloading station 2 where a processed wafer W, a support wafer S or a polymerization wafer T is loaded/unloaded to/from a bonding station 3, and the bonding station 3 where a predetermined processing of the processed wafer W and the support wafer S is performed. The bonding station 3 has a coating device 40 which coats the processed wafer W with an adhesive, thermal treatment apparatuses 41-46 where the processed wafer W is heated to a predetermined temperature, bonding devices 30-33 which bond the processed wafer W and the support wafer S via an adhesive while inverting the front and back surfaces of the support wafer S, and a wafer transfer region 60 where the processed wafer W, the support wafer S or the polymerization wafer T is transferred to each device.
摘要翻译：要解决的问题：通过有效地进行处理的基板和支撑基板的接合来提高接合的生产量。粘合系统1具有装载/卸载站2，其中处理的晶片W，支撑晶片S或聚合晶片T装载/卸载到焊接站3和粘合站3，其中a 执行处理晶片W和支撑晶片S的预定处理。接合站3具有涂覆装置40，其用粘合剂涂覆处理的晶片W，将处理后的晶片W加热到预定温度的热处理装置41-46，将加工晶片W和通过粘合剂支撑晶片S，同时使支撑晶片S的前表面和后表面反转;以及晶片转移区域60，其中处理的晶片W，支撑晶片S或聚合晶片T被转移到每个器件。版权所有（C）2013，JPO＆INPIT

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