专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明专利

JP2013098366A Peeling apparatus, peeling system, peeling method, program, and computer storage medium 有权
标题翻译：剥离装置，剥离系统，剥离方法，程序和计算机存储介质
公开(公告)号：JP2013098366A
公开(公告)日：2013-05-20
申请号：JP2011240053
申请日：2011-11-01
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： DEGUCHI MASATOSHI , SHIRAISHI MASATOSHI , OKADA SHINJI
IPC分类号： H01L21/02 , C09J5/00 , H01L21/683
摘要： PROBLEM TO BE SOLVED: To properly and efficiently perform peeling process of a processed substrate and a support substrate.SOLUTION: A peeling apparatus 30 peels and divides a superposed wafer T into a processed wafer W and a support wafer S and includes: a first holding part 110 which includes a temperature control mechanism 124 controlling the processed wafer W to a first temperature and holds the processed wafer W; and a second holding part 111 which includes a heating mechanism 141 heating the support wafer S to a second temperature higher than the first temperature and holds the support wafer S; and a moving mechanism 150 relatively moving at least the first holding part 110 or the second holding part 111.
摘要翻译：要解决的问题：正确和有效地执行经处理的基板和支撑基板的剥离处理。解决方案：剥离装置30将重叠的晶片T剥离并分割成加工晶片W和支撑晶片S，并且包括：第一保持部110，其包括温度控制机构124，其将处理的晶片W控制到第一温度并保持处理后的晶片W; 以及第二保持部111，其包括加热机构141，其将支撑晶片S加热到高于第一温度的第二温度并保持支撑晶片S; 和至少相对移动的第一保持部110或第二保持部111的移动机构150.（C）2013，JPO＆INPIT

2. 发明专利

JP2013058568A Joining method, program, computer storage medium and joining system 有权
标题翻译：加工方法，程序，计算机存储介质和接合系统
公开(公告)号：JP2013058568A
公开(公告)日：2013-03-28
申请号：JP2011195448
申请日：2011-09-07
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： OKADA SHINJI , SHIRAISHI MASATOSHI , DEGUCHI MASATOSHI
IPC分类号： H01L21/02 , C09J5/00
CPC分类号： B32B38/10 , B32B37/12 , B32B38/0012 , B32B2457/14 , C09J5/00 , H01L21/6708 , H01L21/67092 , H01L21/6715 , H01L21/6835 , H01L21/68707 , H01L2221/68327 , H01L2221/6834 , Y10T156/14
摘要： PROBLEM TO BE SOLVED: To properly join a substrate to be processed and a support substrate to each other by suppressing an adhesive protruding from between the substrate to be processed and the support substrate.SOLUTION: An adhesive is applied onto a wafer to be processed (step A1). Then, the wafer to be processed is heated to a predetermined temperature to solidify the adhesive on the wafer to be processed (step A2). Then, while heating the wafer to be process and a support wafer to the predetermined temperature via the adhesive, the wafer to be processed and the support wafer are pressed to be joined to each other (step A11). Then, a solvent of the adhesive is supplied to an outer adhesive that the adhesive between the wafer to be processed and the support wafer protrudes from the outer face of a superposed wafer obtained by joining the wafer to be processed and the support wafer in the step A11, and the surface of the outer adhesive is removed so that the outer adhesive is formed into a prescribed size (step A12).
摘要翻译：要解决的问题：通过抑制从被处理基板和支撑基板之间突出的粘合剂，将待处理的基板和支撑基板彼此适当地接合。解决方案：将粘合剂施加到要处理的晶片上（步骤A1）。然后，将待处理的晶片加热至预定温度，使待处理晶片上的粘合剂固化（步骤A2）。然后，通过粘合剂将要处理的晶片和支撑晶片加热至预定温度，将被处理晶片和支撑晶片按压以彼此接合（步骤A11）。然后，粘合剂的溶剂被供给到外部粘合剂，待处理晶片和支撑晶片之间的粘合剂从通过在步骤中接合待处理晶片和支撑晶片而获得的叠置晶片的外表面突出 A11，并且去除外部粘合剂的表面，使得外部粘合剂形成规定尺寸（步骤A12）。版权所有（C）2013，JPO＆INPIT

3. 发明专利

JP2011243768A Method of supplying process liquid, program and computer storage medium 审中-公开
标题翻译：供应流程液体，程序和计算机存储介质的方法
公开(公告)号：JP2011243768A
公开(公告)日：2011-12-01
申请号：JP2010115025
申请日：2010-05-19
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： IWAZU HARUO , KITAHARA SHIGENORI , SHIRAISHI MASATOSHI
IPC分类号： H01L21/3063 , C25D17/06 , C25D17/10 , C25F7/00 , H01L21/306 , H01L21/312
CPC分类号： H01L21/02282 , C25D5/022 , C25D5/08 , C25D17/001 , C25D17/008 , C25D21/12 , H01L21/3081 , H01L21/6708 , H01L21/76898
摘要： PROBLEM TO BE SOLVED: To supply a process liquid to a predetermined position on a substrate with high positional precision by an inexpensive method.SOLUTION: In a process liquid supplying method, a template 60 which has plural opening portions 90 formed at places corresponding to predetermined positions on a surface 60a and flow paths 91 intercommunicating from the opening portions 90 formed on the surface 60a to a back surface 60b of the template 60 is mounted on a spin chuck 62 for rotating the template 60 while holding the back surface 60b of the template 60. Then, a process liquid is supplied onto the surface 60a of the template 60, and the spin chuck 62 is rotated to fill the flow paths 91 with the process liquid. An wafer W is brought into close contact with the surface 60a of the template 60 filled with the process liquid, and then the template 60 and the wafer W are turned upside down while keeping the close contact between the template 60 and the wafer W.
摘要翻译：要解决的问题：通过廉价的方法以高位置精度将工艺液体提供给基板上的预定位置。解决方案：在工艺液体供给方法中，模板60具有形成在对应于表面60a上的预定位置的位置处的多个开口部分90和从形成在表面60a上的开口部分90相互连通的流动路径91 模板60的表面60b安装在旋转卡盘62上，用于在保持模板60的背面60b的同时旋转模板60.然后，将处理液体供给到模板60的表面60a上，并且旋转卡盘62 旋转以用处理液体填充流路91。使晶片W与填充有处理液的模板60的表面60a紧密接触，然后将模板60和晶片W上下颠倒，同时保持模板60和晶片W之间的紧密接触。 P>版权所有（C）2012，JPO＆INPIT

4. 发明专利

JP2010056569A Reflow method, pattern formation method, and manufacturing method of tft element for liquid crystal display device 审中-公开
标题翻译：液晶显示装置TFT元件的回流方法，图案形成方法及其制造方法
公开(公告)号：JP2010056569A
公开(公告)日：2010-03-11
申请号：JP2009271325
申请日：2009-11-30
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： ASO YUTAKA , SHIRAISHI MASATOSHI
IPC分类号： H01L21/336 , G02F1/1368 , H01L21/027 , H01L29/786
摘要： PROBLEM TO BE SOLVED: To provide a technology that causes a softened resist to quickly flow and precisely controls the flow direction and the flow area of the softened resist, in the reflow treatment of the resist, and thereby can be utilized for forming a pattern and manufacturing a TFT element for liquid crystal displays. SOLUTION: In a reflow method wherein a part or the whole of an exposed area wherein a lower layer film 102 is exposed is coated with a resist of a resist film 103 by softening the resist of the resist film 103 and causing the resist to flow to an object to be treated which includes the lower layer film 102 and the resist film 103 patterned so that the exposed area and a coated area coated with the lower layer film may be formed in a layer on the lower layer film 102, the resist film 103 is used which has such a shape that its end part J protrudes beyond an end part of the film 102 just below the resist film 103 to hang over the exposed area. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：为了提供在抗蚀剂的回流处理中使柔软的抗蚀剂快速流动并精确地控制软化的抗蚀剂的流动方向和流动面积的技术，从而可以用于形成图案并制造用于液晶显示器的TFT元件。解决方案：在其中通过使抗蚀剂膜103的抗蚀剂软化并使抗蚀剂的抗蚀剂膜被抗蚀剂膜103的抗蚀剂涂覆其中暴露下层膜102的部分或全部的回流方法流到被处理物体，其包括图案化的下层膜102和抗蚀剂膜103，使得暴露区域和涂覆有下层膜的涂覆区域可以形成在下层膜102上的层中，使用抗蚀膜103，其具有使其端部J突出超过抗蚀剂膜103正下方的膜102的端部以悬在暴露区域上的形状。版权所有（C）2010，JPO＆INPIT

5. 发明专利

JP2007273828A Reflow method, pattern formation method, and manufacturing method of tft element for liquid crystal display 有权
标题翻译：反射方法，图案形成方法和液晶显示器TFT元件的制造方法
公开(公告)号：JP2007273828A
公开(公告)日：2007-10-18
申请号：JP2006098974
申请日：2006-03-31
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： ASO YUTAKA , SHIRAISHI MASATOSHI
IPC分类号： H01L21/027 , G02F1/1368 , G03F7/40 , H01L21/336 , H01L29/786
CPC分类号： G03F7/40 , G03F7/0048 , H01L27/1288 , H01L29/66765
摘要： PROBLEM TO BE SOLVED: To provide a technology that allows a softened resist to flow rapidly and can precisely control the flow direction and area, and thereby can be utilized for forming a pattern and manufacturing a TFT element for liquid crystal displays in the reflow treatment of the resist. SOLUTION: A flow acceleration region 104 on a lower-layer film 101 from the resist 103 to a target region S 1 is surface-treated by a surface-active agent, thus improving wettability so that the resist can flow easily. When the resist 103 is softened, it advances toward the flow acceleration region 104 and is guided to the target region S 1 . The advance of the resist 103 toward a prohibited area S 2 that is not surface-treated is suppressed conversely by the reaction as the quantity of the resist 103 toward the target region S 1 increases. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种允许软化抗蚀剂快速流动并且可以精确地控制流动方向和面积的技术，从而可以用于形成图案并制造用于液晶显示器的TFT元件回流处理抗蚀剂。解决方案：从抗蚀剂103到目标区域S 1 的下层膜101上的流动加速区域104由表面活性剂进行表面处理，从而改善润湿性，使得抗蚀剂容易流动。当抗蚀剂103软化时，其朝向流动加速区域104前进并被引导到目标区域S 1 。通过作为抗蚀剂103朝向目标区域S 1 2 >增加。版权所有（C）2008，JPO＆INPIT

6. 发明专利

JP2013058571A Joining method, program, computer storage medium and joining system 有权
标题翻译：加工方法，程序，计算机存储介质和接合系统
公开(公告)号：JP2013058571A
公开(公告)日：2013-03-28
申请号：JP2011195467
申请日：2011-09-07
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： DEGUCHI MASATOSHI , SHIRAISHI MASATOSHI , HIRAKAWA OSAMU , MANABE EIJI
IPC分类号： H01L21/02
CPC分类号： H01L21/67092 , H01L21/67109 , H01L21/67742 , H01L21/6838 , H01L21/68707
摘要： PROBLEM TO BE SOLVED: To properly join a substrate to be processed and a support substrate to each other by suppressing an adhesive protruding from between the substrate to be processed and the support substrate.SOLUTION: An adhesive is applied onto a wafer to be processed (step A1). Then, the wafer to be processed is heated to a predetermined temperature to solidify the adhesive on the wafer to be processed (step A2). Then, while heating the wafer to be processed and a support wafer to the predetermined temperature via the adhesive, the wafer to be processed and the support wafer are pressed to be joined to each other (step A11). Then, a solvent of the adhesive is supplied to an outer adhesive that the adhesive between the wafer to be processed and the support wafer protrudes from the outer face of a superposed wafer obtained by joining the wafer to be processed and the support wafer in the step A11, and the surface of the outer adhesive is removed by applying an ultrasonic wave to the outer adhesive so that the outer adhesive is formed into a prescribed size (step A12).
摘要翻译：要解决的问题：通过抑制从被处理基板和支撑基板之间突出的粘合剂，将待处理的基板和支撑基板彼此适当地接合。解决方案：将粘合剂施加到要处理的晶片上（步骤A1）。然后，将待处理的晶片加热至预定温度，使待处理晶片上的粘合剂固化（步骤A2）。然后，通过粘合剂将待处理的晶片和支撑晶片加热到预定温度，将被处理晶片和支撑晶片按压以彼此接合（步骤A11）。然后，将粘合剂的溶剂供给到外部粘合剂，待处理晶片和支撑晶片之间的粘合剂从通过在步骤中接合待处理晶片和支撑晶片而获得的叠置晶片的外表面突出 A11，并且通过向外部粘合剂施加超声波以除去外部粘合剂的表面，使得外部粘合剂形成规定尺寸（步骤A12）。版权所有（C）2013，JPO＆INPIT

7. 发明专利

JP2011174140A Film deposition method, program and computer storage medium 有权
标题翻译：电影沉积方法，程序和计算机存储介质
公开(公告)号：JP2011174140A
公开(公告)日：2011-09-08
申请号：JP2010039741
申请日：2010-02-25
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： IWAZU HARUO , SHIRAISHI MASATOSHI , KITAHARA SHIGENORI
IPC分类号： C25D5/02 , C25D7/12 , H01L21/288 , H01L21/306 , H01L21/3205 , H01L23/52
摘要： PROBLEM TO BE SOLVED: To deposit a film on a prescribed position of a substrate at high positional accuracy.
SOLUTION: In the surface 112a of a template 112 for electrode formation, a plurality of opening parts 115 are formed at positions corresponding to the through-holes of a wafer W. The template 112 for electrode formation is provided with a flow passage 116 for a liquid for film deposition communicating with the opening parts 115. After the template 112 for electrode formation and the wafer W are tightly adhered, and in this state, a plating liquid is fed to the through-holes of the wafer W from the opening parts 115 via the through passage 116 from a plating liquid supply port 117, and thus electrodes are formed on the through-holes of the wafer W.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：以高位置精度将膜沉积在基板的规定位置上。解决方案：在用于电极形成的模板112的表面112a中，在与晶片W的通孔相对应的位置处形成多个开口部分115.用于电极形成的模板112设置有流路 116，用于与开口部分115连通的膜沉积液体。在用于电极形成的模板112和晶片W紧密粘合之后，并且在该状态下，电镀液体从晶片W的通孔馈送到晶片W的通孔通过贯通通道116从电镀液供给口117开始开口部115，从而在晶片W的通孔上形成电极。（C）2011，JPO＆INPIT

8. 发明专利

JP2009198925A Substrate processing method 有权
标题翻译：基板处理方法
公开(公告)号：JP2009198925A
公开(公告)日：2009-09-03
申请号：JP2008042226
申请日：2008-02-22
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： SHIRAISHI MASATOSHI , TERADA SHOJI , ASO YUTAKA , ONISHI TATSUMI , MANABE EIJI
IPC分类号： G03F7/40 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a substrate processing method for raising production efficiency and reducing costs in a reflow process of dissolving a photoresist pattern and forming a desired resist pattern.
SOLUTION: The substrate processing method includes dissolving a photoresist pattern 206 formed on a substrate G to form a new photoresist pattern, wherein the following steps are carried out. The steps are: exposing the photoresist pattern 206 used as an etching mask for a base film to pure water W for a prescribed time; blowing air onto the substrate G to remove the pure water W; and exposing the photoresist pattern 206 to a solvent atmosphere to dissolve to mask a prescribed area.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：解决问题的方法：提供一种提高生产效率和降低光刻胶图案溶解并形成所需抗蚀剂图案的回流工艺中的成本的基板处理方法。解决方案：基板处理方法包括将形成在基板G上的光致抗蚀剂图案206溶解以形成新的光致抗蚀剂图案，其中执行以下步骤。步骤是将用作基膜的蚀刻掩模的光致抗蚀剂图案206暴露于纯水W达规定时间; 将空气吹到基板G上以除去纯水W; 并将光致抗蚀剂图案206暴露于溶剂气氛以溶解以掩盖规定区域。版权所有（C）2009，JPO＆INPIT

9. 发明专利

JP2008172104A Reflow processing system and reflow processing method 审中-公开
标题翻译：反流处理系统和反流处理方法
公开(公告)号：JP2008172104A
公开(公告)日：2008-07-24
申请号：JP2007005156
申请日：2007-01-12
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： ASO YUTAKA , SHIRAISHI MASATOSHI , TANAKA YUKINOBU
IPC分类号： H01L21/027 , G03F7/40 , H01L21/336 , H01L29/786
摘要： PROBLEM TO BE SOLVED: To provide a reflow processing system which can perform uniform processing in a substrate plane and can attain sufficient throughput. SOLUTION: In a reflow processing unit (REFLW) 50, a substrate G is conveyed in the X direction by rotating a roller 51 and when the substrate G passes through a hollow tubular reflow processor 53, gas containing a solvent is supplied from the solvent supply port 69 of a solvent supply section 55 toward the surface of the substrate G and the gas thus supplied is sucked in from the solvent suction port 75 of a solvent sucking section 57. The gas containing a solvent delivered to a reflow processing space S forms a unidirectional flow toward the solvent suction port 75 and when the solvent in the atmosphere of the reflow processing space is sucked to a resist on the surface of the substrate G, the resist is softened and fluidized, thus forming a deformation resist pattern. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种能够在基板平面上进行均匀处理并能获得足够的生产量的回流处理系统。解决方案：在回流处理单元（REFLW）50中，通过旋转辊51在X方向上输送基板G，并且当基板G通过中空管状回流处理器53时，含有溶剂的气体从溶剂供给部55的朝向基板G的表面的溶剂供给口69和由此供给的气体从溶剂吸引部57的溶剂吸入口75吸入。含有输送到回流处理空间的溶剂的气体 S形成朝向溶剂吸入口75的单向流动，并且当回流处理空间的气氛中的溶剂被吸附到基板G的表面上的抗蚀剂时，抗蚀剂软化并流化，从而形成变形抗蚀剂图案。版权所有（C）2008，JPO＆INPIT

10. 发明专利

JP2008158277A Method for treating substrate and resist surface treating device 有权
标题翻译：用于处理基板和电阻表面处理装置的方法
公开(公告)号：JP2008158277A
公开(公告)日：2008-07-10
申请号：JP2006347265
申请日：2006-12-25
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： SHIRAISHI MASATOSHI
IPC分类号： G03F7/38 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To inexpensively and efficiently prevent uneven film thickness of a resist by forming an appropriate modified layer on the surface of the resist immediately after applied on a substrate to be treated without using a reduced pressure drying means. SOLUTION: In a resist surface treating unit (VD) 46, a substrate G immediately after coated with a resist is conveyed by a flat flow system over a roller conveyance passage 104, sprayed with a dry gas (A) by a drying gas blowing section 106 in the middle of the passage, and further sprayed with chemical component-containing air B 1 , B 2 by first and second chemical liquid component-containing gas blowing sections 108, 109, respectively. A substance that reacts with the resist to produce a modified layer is used for the chemical liquid component, and preferably, a vapor of a developing solution or HMDS (hexamethyldisilazane) is used. Air is preferably used for the gas. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：通过在不使用减压干燥装置的基板上施加之后，立即在抗蚀剂表面上形成适当的改性层，廉价有效地防止抗蚀剂的不均匀膜厚度。解决方案：在抗蚀剂表面处理单元（VD）46中，立即涂覆抗蚀剂的基板G通过平坦流动系统输送到辊输送通道104上，通过干燥喷射干燥气体（A）在通道中间的气体吹送部分106，并且通过第一和第二含化学液体成分的气体吹送进一步喷射含化学成分的空气B 1 B 2 部分108,109。使用与抗蚀剂反应以产生改性层的物质作为化学液体成分，优选使用显影液或HMDS（六甲基二硅氮烷）的蒸气。空气优选用于气体。版权所有（C）2008，JPO＆INPIT

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式