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    • 2. 发明专利
    • Invar alloy for shadow mask and production method therefor
    • 用于阴影掩蔽的合金及其生产方法
    • JP2003027188A
    • 2003-01-29
    • JP2001218983
    • 2001-07-19
    • Sumitomo Metal Ind LtdToyo Kohan Co Ltd住友金属工業株式会社東洋鋼鈑株式会社
    • TSUGE SHINJIKITA ISATONISHI TAKAYUKIOKAYAMA HIRONAOFUKUMOTO MASAHIRO
    • C21C7/00C21C7/04C21C7/064C21C7/076C22C38/00C22C38/54H01J29/07
    • Y02P10/242
    • PROBLEM TO BE SOLVED: To provide an inexpensive, high strength invar alloy which has low thermal expansion and excellent hot workability, and is used for a shadow mask of a cathode ray tube, and to provide a production method therefor. SOLUTION: The alloy has a composition which contains one or more kinds of strengthening elements selected from C and Nb, Ni, Co, Al and Ca, and, if required, which further contains B, and in which the contents of Si, Mn, P, S, Mg, Cu, Cr, V, Mo, Ti, N and O are controlled to specified values or lower, in which the content of Mg inclusion is controlled to a specified value or lower, and also, Ca/O is 0.1 to 2.0, or the proportion of Mg, Al and Ca in oxide inclusions is controlled to a specified ratio to allow Ca sulfide to precipitate incidentially to oxide inclusions, and which contains the balance being substantially Fe. In the production of the alloy, the ratio of CaO to Al2 O3 in slag to be used in secondary refining is controlled to 1.4 to 2.2, and the content of SiO2 and the content of MgO in the slag are controlled and then slag refining is performed. Thereafter, a Ca alloy is added thereto by the start of casting.
    • 要解决的问题:提供一种低热膨胀性和优异的热加工性的廉价高强度的非晶合金,并用于阴极射线管的荫罩,并提供其制造方法。 解决方案:该合金具有含有选自C和Nb,Ni,Co,Al和Ca中的一种或多种强化元素的组合物,如果需要,还含有B,其中Si,Mn, P,S,Mg,Cu,Cr,V,Mo,Ti,N和O被控制在规定值以下,Mg含量的含量控制在规定值以下,Ca / O为 0.1〜2.0,或者将氧化物夹杂物中的Mg,Al,Ca的比例控制在规定的比例,使硫化钙与氧化物夹杂物偶然析出,其余量基本上为Fe。 在合金的制造中,用于二次精炼的渣中的CaO与Al 2 O 3的比例控制在1.4〜2.2,控制炉渣中SiO 2含量和MgO含量,进行渣精炼 。 此后,通过开始浇铸加入Ca合金。
    • 9. 发明专利
    • Substrate for epitaxial growth and method for manufacturing the same, and substrate for superconducting wire rod
    • 用于外延生长的基板及其制造方法以及用于超导线的基板
    • JP2013101832A
    • 2013-05-23
    • JP2011244900
    • 2011-11-08
    • Toyo Kohan Co Ltd東洋鋼鈑株式会社Sumitomo Electric Ind Ltd住友電気工業株式会社
    • NANBU KOJIKUROKAWA TEPPEIKAMISHIRO TAKASHIOKAYAMA HIRONAO
    • H01B12/06C25D3/12H01B13/00
    • Y02E40/642
    • PROBLEM TO BE SOLVED: To solve such a problem that, while a method using plating is known as a method for depositing Ni or an Ni alloy on a biaxially crystal oriented Cu layer, plating at a low current density (1-4 A/dm) is generally required in order to form an Ni layer having high crystal orientation, but time required for plating treatment at a low current density is prolonged, so that productivity is reduced, specifically overheat may be caused in a metal substrate as a laminate material when a long metal substrate is produced by a reel-to-reel method, and therefor, it is desired to establish a manufacturing condition capable of improving production efficiency by increasing current density while maintaining crystal orientation.SOLUTION: In order to solve the problem, a substrate for epitaxial growth of the present invention includes a biaxially crystal oriented Cu layer, and a protective layer provided on the Cu layer. The protective layer has a plating distortion ε of 15×10or less.
    • 解决的问题为了解决这样一个问题,即使用电镀方法作为在双轴结晶取向Cu层上沉积Ni或Ni合金的方法,以低电流密度(1-4 通常需要A / dm 2 )以形成具有高晶体取向的Ni层,但是延长了以低电流密度进行电镀处理所需的时间,从而生产率 在通过卷对卷方式制造长金属基板时,可能在作为层压材料的金属基板中导致特别的过热,因此希望建立能够通过增加电流来提高生产效率的制造条件 同时保持晶体取向。 解决方案:为了解决这个问题,本发明的外延生长用基板包括双轴取向Cu层和设置在Cu层上的保护层。 保护层的电镀变形ε为15×10 -6