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1. 发明专利

JPS58185489A Manufacture of silicon nitride crucible 失效
标题翻译：硅酸钙的制造
公开(公告)号：JPS58185489A
公开(公告)日：1983-10-29
申请号：JP6577682
申请日：1982-04-20
申请人： Toshiba Ceramics Co , Tokyo Shibaura Electric Co
发明人： MATSUO HIDEYASU , NAGASHIMA HIDEO , WATANABE MASAHARU , USAMI TOSHIROU , MURAOKA HISASHI
IPC分类号： C23C16/34 , B28B11/04 , C23C16/44 , C23C16/458

2. 发明专利

JPS57188496A HIGH DENSITY SILICON NITRIDE-BASE CONTAINER FOR PULLING UP SILICON SINGLE CRYSTAL 失效
公开(公告)号：JPS57188496A
公开(公告)日：1982-11-19
申请号：JP7047581
申请日：1981-05-11
申请人： TOSHIBA CERAMICS CO , TOKYO SHIBAURA ELECTRIC CO
发明人： MATSUO YUKITOSHI , IMANISHI YASUHIRO , NAGASHIMA HIDEO , WATANABE MASAHARU , USAMI TOSHIROU , MURAOKA HISASHI
IPC分类号： C04B35/584 , C04B35/58 , C30B15/10 , C30B29/06
摘要： PURPOSE:To obtain the titled silicon nitride-base container giving a high purity Si single crystal with high crystallinity by forming the face of a pulling container contacting with molten Si using silicon nitride made chiefly of alpha-phase and contg. a prescribed percentage or more of single crystal grains having a prescribed length. CONSTITUTION:A container is formed using a CVD substrate made of C, Si, silicon nitride or the like, and silicon nitride contg. >=80% alpha-phase and >=10vol% single crystal grains having >=5mum length is deposited on the face of the container contacting with molten Si from a gaseous phase by a CVD method. By setting the vapor deposition temp. of silicon nitride to 1,050-1,450 deg.C, silicon nitride with said characteristics is obtd. Using the resulting high density silicon nitride-base container a high purity Si single crystal with a very low oxygen concn. such as atom/cm and high crystallinity can be pulled up.

3. 发明专利

JPS57188493A MANUFACTURE OF JIG FOR PULLING UP SILICON 失效
公开(公告)号：JPS57188493A
公开(公告)日：1982-11-19
申请号：JP7047781
申请日：1981-05-11
申请人： TOSHIBA CERAMICS CO , TOKYO SHIBAURA ELECTRIC CO
发明人： MATSUO YUKITOSHI , IMANISHI YASUHIRO , NAGASHIMA HIDEO , WATANABE MASAHARU , USAMI TOSHIROU , MURAOKA HISASHI
IPC分类号： C04B35/584 , B28B21/42 , C01B21/068 , C30B15/00 , C30B15/10 , C30B15/34 , H01L21/02 , H01L21/208
摘要： PURPOSE:To obtain a dense jig for pulling up Si of high purity and density while preventing diffusion and pollution due to impurities in an Si substrate by vapor- depositing a silicon nitride layer on the surface of the Si substrate of a desired shape by a CVD method and by removing the substrate. CONSTITUTION:A silicon nitride layer is vapor-deposited on the inside and/or the outside of an Si crystal substrate of a desired shape such as a crucible by a CVD method using Si halide or silane as an Si source, NH3 or N2 as an N source and H2 and/or N2 as a carrier gas for the gaseous sources. Only the substrate is then removed from the substrate having the silicon nitride layer deposited thereon with gaseous HCl or Cl2 at an elevated temp. to obtain a jig made of only silicon nitride for pulling up Si.

4. 发明专利

JPS57188497A CONTAINER FOR PULLING UP SILICON SINGLE CRYSTAL 失效
公开(公告)号：JPS57188497A
公开(公告)日：1982-11-19
申请号：JP7047681
申请日：1981-05-11
申请人： TOSHIBA CERAMICS CO , TOKYO SHIBAURA ELECTRIC CO
发明人： MATSUO YUKITOSHI , IMANISHI YASUHIRO , NAGASHIMA HIDEO , WATANABE MASAHARU , USAMI TOSHIROU , MURAOKA HISASHI
IPC分类号： C04B41/87 , C30B15/10 , C30B29/06
摘要： PURPOSE:To obtain the titled container capable of pulling up a high purity Si single crystal by regulating the Fe and Cu contents of a silicon nitride substrate to prescribed values or below, prescribing the porosity, and coating the face of the substrate contacting with molten Si with a silicon nitride film deposited from a gaseous phase. CONSTITUTION:A container used to pull up and Si single crystal from molten Si is manufactured by coating the face of a sintered silicon nitride substrate contacting with the molten Si with a silicon nitride film deposited from a gaseous phase. The amounts of Fe and Cu contained in the substrate are prescribed to atom/cm can be pulled up.

5. 发明专利

JPS57188409A MANUFACTURE OF HIGH DENSITY SILICON NITRIDE 失效
公开(公告)号：JPS57188409A
公开(公告)日：1982-11-19
申请号：JP7047981
申请日：1981-05-11
申请人： TOSHIBA CERAMICS CO , TOKYO SHIBAURA ELECTRIC CO
发明人： MATSUO YUKITOSHI , IMANISHI YASUHIRO , NAGASHIMA HIDEO , WATANABE MASAHARU , USAMI TOSHIROU , MURAOKA HISASHI
IPC分类号： C04B35/584 , B28B21/42 , C01B21/068 , C23C16/34 , C30B15/10 , C30B35/00 , H01L21/318
摘要： PURPOSE:To manufacture SiN with superior spalling resistance by carrying out all of stages for vapor-depositing a thin Si film on a substrate from a gaseous phase, further vapor-depositing an SiN layer on the Si film, and removing the Si film in a specified temp. range. CONSTITUTION:A thin Si film about 10-300mum thickness is vapor-deposited on the surface of a heat resistant substrate such as C by a CVD method, and an SiN layer is further vapor-deposited on the Si film. The Si film is then removed by etching with gaseous HCl or the like and/or melting by heating to >=about 1,420 deg.C to separate the SiN from the substrate. Said stages are carried out in the temp. range of 700-1,600 deg.C through no cooling stage. In said treatment the SiN layer is not cooled to a temp. at which a thermal strain is produced, and the Si film prevents impurities from entering the SiN layer from the substrate. Thus, high density and high purity SiN with superior spalling resistance is obtd. by such simple treatment.

6. 发明专利

JPS55117233A SEMICONDUCTOR DEVICE AND MANUFACTURING THEREOF 失效
公开(公告)号：JPS55117233A
公开(公告)日：1980-09-09
申请号：JP2371179
申请日：1979-03-01
申请人： TOKYO SHIBAURA ELECTRIC CO , TOSHIBA CERAMICS CO
发明人： OGINO MASANOBU , WATANABE MASAHARU , OANA YASUHISA , TAKAI NORIHEI
IPC分类号： H01L29/73 , H01L21/22 , H01L21/225 , H01L21/331 , H01L29/167
摘要： PURPOSE:To eliminate strain or dislocation and obtain a semiconductor device of good electric properties, by using Ge and an impurity having covalent bonding smaller than the covalent bonding radius of Si to produce a diffused layer on an Si substrate. CONSTITUTION:A diffused layer 12 is produced in a surface part of an Si substrate 11. A protective film 14 is coated on a doped layer 13 on the diffused layer 12 to prevent an impurity from being diffused out. A semiconductor device 10 is thus manufactured. A mixture of Ge and an impurity such as P or B having a smaller convalent bonding radius than Si is used for the diffused layer 12 depending on an electroconductive type to be obtained. The ratio of the diffused quantity of the impurity to that of the Ge in the diffused layer 12 is prescribed at 1.30 or less. The atom bonding radius is made uniform by the impurity of smaller covalent bonding radius and the Ge of larger covalent bonding radius. This results in making the semiconductor device undefective.

7. 发明专利

JPS57188495A HIGH DENSITY SILICON NITRIDE-BASE CONTAINER FOR PULLING UP SILICON SINGLE CRYSTAL 失效
公开(公告)号：JPS57188495A
公开(公告)日：1982-11-19
申请号：JP7047481
申请日：1981-05-11
申请人： TOSHIBA CERAMICS CO , TOKYO SHIBAURA ELECTRIC CO
发明人： MATSUO YUKITOSHI , IMANISHI YASUHIRO , NAGASHIMA HIDEO , WATANABE MASAHARU , USAMI TOSHIROU , MURAOKA HISASHI
IPC分类号： C04B41/87 , C30B15/10 , C30B29/06
摘要： PURPOSE:To obtain the titled silicon nitride-base container giving a high purity Si single crystal with a very low oxygen concn. and high crystallinity by depositing silicon nitride contg. a prescribed percentage or above of beta-phase on the face of a pulling container contacting with molten Si from a gaseous phase. CONSTITUTION:A container is formed using a CVD substrate made of C, Si, silicon nitride or the like, and silicon nitride contg. >=20% beta-phase is deposited on the face of the container contacting wih molten Si from a gaseous phase by a CVD method. When Si is melted using the resulting silicon nitride-base container and an Si single crystal is pulled up, a high purity Si single crystal with a very low oxygen concn. such as atom/cm and high crystallinity can be pulled up.

8. 发明专利

JPS57188408A MANUFACTURE OF HIGH DENSITY SILICON NITRIDE 失效
公开(公告)号：JPS57188408A
公开(公告)日：1982-11-19
申请号：JP7047881
申请日：1981-05-11
申请人： TOSHIBA CERAMICS CO , TOKYO SHIBAURA ELECTRIC CO
发明人： MATSUO YUKITOSHI , IMANISHI YASUHIRO , NAGASHIMA HIDEO , WATANABE MASAHARU , USAMI TOSHIROU , MURAOKA HISASHI
IPC分类号： C04B35/584 , C01B21/068 , C23C16/34 , C23C16/42 , C30B15/10 , C30B35/00 , H01L21/318
摘要： PURPOSE:To obtain a high density silicon nitride film with superior spalling resistance by using carbon having a restricted range of specific gravity and low air permeability as a substrate and vapor-depositing silicon nitride from a gaseous phase. CONSTITUTION:Carbon having 1.30-1.60g/cc specific gravity according to an n-butyl alcohol method and cm /sec air permeability is used as a substrate, and silicon nitride is vapor-deposited from a gaseous phase by a CVD method. The resulting silicon nitride film is homogeneous, the thermal strain is uniformly dispersed during cooling after the deposition, and the film bonds very firmly to the substrate. Even after removing the carbon substrate by oxidation, the film does not cause cracking and shows high spalling resistance. When the specific gravity of the carbon substrate is not within said range, the spalling resistance of the deposited film is deteriorated. When the air permeability exceeds said restriction, the number of the surface open pores of the substrate is increased, and a thermal strain causing crakcing remains in the deposited film.

9. 发明专利

JPS5617011A SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF 失效
公开(公告)号：JPS5617011A
公开(公告)日：1981-02-18
申请号：JP9257979
申请日：1979-07-23
申请人： TOKYO SHIBAURA ELECTRIC CO , TOSHIBA CERAMICS CO
发明人： WATANABE MASAHARU , HONMA KAZUMOTO
IPC分类号： H01L21/205 , C30B15/00 , C30B23/02 , C30B33/00 , C30B33/02 , H01L21/20 , H01L21/208 , H01L21/322
摘要： PURPOSE:To prevent defects in a laminated layer for a semiconductor device by using a substrate having defects of number larger than 10 /cm even after processing it for 18hr at 1,050 deg.C by heating an Si substrate containing a predetermined density of oxygen at 600-900 deg.C for predetermined time to produce defects of number larger than 10 /cm . CONSTITUTION:Defects 6 existed in the crystal of a substrate 1 (round bottom pits) have close relationship with defects formed in an epitaxial layer 4 of laminated layer for a semiconductor device. If the round bottom pits are higher in number than 10 /cm when heating the substrate at 1,050 deg.C for 18hr in an N2, ethcing it and observing it by an optical microscope, the defects in the epitaxial layer 4 of laminated layer fall within an allowable range. This high temperature process enlarges the miniature defects in the substrate to a size capable of observing them. The more the round bottom pits are increased, the less the defects in the epitaxial layer are decreased. Since the round bottom pit density is varied in accordance with the density of oxygen, when the substrate is heated at low temperature of 600- 900 deg.C, the round bottom pit density is increased without increasing the density of the oxygen in the substrate so as to prevent the defects in the epitaxial layer of the laminated layer.

10. 发明专利

JPS55163835A SELECTIVE LIQUID PHASE GROWTH OF ON SEMICONDUCTOR REGION 失效
公开(公告)号：JPS55163835A
公开(公告)日：1980-12-20
申请号：JP7014579
申请日：1979-06-06
申请人： TOKYO SHIBAURA ELECTRIC CO
发明人： NAKASHIMA KOUICHIROU , WATANABE MASAHARU
IPC分类号： C30B19/00 , C30B19/12 , H01L21/208 , H01L33/16 , H01L33/30 , H01L33/34
摘要： PURPOSE:To make thickness of a liquid phase grown layer uniform by a method wherein after all surface of a semiconductor substrate is dipped by being brought into contact with liquid phase growing solution through a through hole of a solution reservoir solution on an exposed surface of the substrate at an opening region of an insulation film is only left unremoved through sliding a device. CONSTITUTION:In a receiving hole 4 which is bored on a lower device 5 a semiconductor substrate 7 which is covered by an insulating film on which openings are perfolated selectively is placed. The lower device 5 is brought into contact by its surface with an upper device 3 which has a reservoir 2 for liquid phase growing solution. By sliding the device all surface of the substrate 7 is brought into contact with liquid phase growing solution 6 through bringing the hole 4 so as to be placed beneath the reservoir 2. By repeated sliding solution 6 on the exposed surface of the substrate 7 at the opening region of the insulation film is only left unremoved. A liquid phase grown layer is formed by being cooled.

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