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1. 发明专利

JPH0283296A PULLING DEVICE FOR SEMICONDUCTOR SINGLE CRYSTAL 失效
公开(公告)号：JPH0283296A
公开(公告)日：1990-03-23
申请号：JP23358688
申请日：1988-09-20
申请人： TOSHIBA CERAMICS CO
发明人： NISHIKAWA CHIHIRO , YAMATO MITSUHIRO , ASAI HIDEKI
IPC分类号： C30B15/14 , H01L21/208
摘要： PURPOSE:To obtain pulling up device for semiconductor single crystal capable of increasing pulling up speed of single crystal by installing ring-like ceramic part material in upper part of graphite crucible provided at outside of quartz crucible and providing gap in said part material. CONSTITUTION:The subject pulling up device 1 has pressure-reducing vessel 19 in which crucibles are installed. Said crucibles are composed of quartz crucible 10 and graphite crucible 12 provided at outside of said quartz crucible and ceramic part material 20 having gap 20a is installed in upper part of the crucible 12. Besides, the part material 20 is made of ZrO2, etc. Further, heater 14 made of Mo, etc., is provided at outside of the crucibles and furthermore heat insulation cylinder 16 is provided at outside of the heater 14. Then, a semiconductor seed crystal 18' is rotated in the direction of arrow D and simultaneously a Si single crystal 18 is pulled up in the direction of arrow C by pulling up means 17 installed over the crucibles. In said case, heat conductivity of the part material 20 installed in upper part of the crucible 12 is small and heat transmitted from the heater 14 to the crucible 10 is reduced. Therefore, radiation heat transferred to the single crystal 18 from the crucible 10 is suppressed to low and pulling up speed is increased.

2. 发明专利

JPH0142916B2 失效
公开(公告)号：JPH0142916B2
公开(公告)日：1989-09-18
申请号：JP13925883
申请日：1983-07-29
申请人： TOSHIBA CERAMICS CO
发明人： TAJI HIDEKAZU , YAMATO MITSUHIRO , WATANABE MASAHARU
IPC分类号： C30B15/00 , C30B15/30 , H01L21/208

3. 发明专利

JPH0140800B2 失效
公开(公告)号：JPH0140800B2
公开(公告)日：1989-08-31
申请号：JP4046984
申请日：1984-03-05
申请人： TOSHIBA CERAMICS CO
发明人： YAMATO MITSUHIRO
IPC分类号： C30B15/20 , H01L21/02 , H01L21/208

4. 发明专利

JPS6424090A METHOD AND APPARATUS FOR PRODUCING SINGLE CRYSTAL 失效
公开(公告)号：JPS6424090A
公开(公告)日：1989-01-26
申请号：JP18039287
申请日：1987-07-20
申请人： TOSHIBA CERAMICS CO
发明人： YAMATO MITSUHIRO , HIGUCHI TAKAYOSHI , TAKASU SHINICHIRO
IPC分类号： C30B15/22 , C30B29/06
摘要： PURPOSE:To increase the concn. of oxygen in a single crystal without lowering the pulling up speed of the single crystal by impressing rotationally symmetrical groups of lines of magnetic induction to the melt of the crystal component in a cylindrical crucible in such a manner that the rotationally symmetrical axis thereof deviates relatively in the direction perpendicular to the melt surface. CONSTITUTION:The silicon melt 1 in the crucible 2 is heated by a heater 6 and the single crystal 4 is pulled up from the melt 1 by a wire 5. A pair of flat plate-shaped superconducting magnetic field coils 8 are disposed as magnetic field generating means to face each other on both sides of a heat insulating member 7 and the center line 10 of the coils 8 is aligned to the liquid surface 11 of the melt 1. Since convections 23, 25 are generated in the melt 1 by heating with the heater 6, the flow of the convections 23, 25 is suppressed by impressing the lines 10 of magnetic induction thereto. However, the liquid surface 11 lowers with an increase in the single crystal 4 and the straight line lines 12 of magnetic induction passing the neighborhood of the center line 10 decrease in the angle of intersection with the flow 20 along the center line 10. The coils 8 are, therefore, moved relatively with the liquid surface 11 to intersect the lines 12 of magnetic induction with the flow 20 as well in such a manner that the center line 10 is positioned relatively lower than the liquid surface 11.

5. 发明专利

JPS63112489A PRODUCTION APPARATUS FOR SINGLE CRYSTAL 失效
公开(公告)号：JPS63112489A
公开(公告)日：1988-05-17
申请号：JP25965486
申请日：1986-10-31
申请人： TOSHIBA CERAMICS CO
发明人： TAKASU SHINICHIRO , HIGUCHI TAKAYOSHI , YAMATO MITSUHIRO , TAJI HIDEKAZU
IPC分类号： C30B15/00 , H01L21/18
摘要： PURPOSE:To obtain a homogenous high-quality single crystal of e.g. silicon without crystal defects etc. with a small He loss at a low cost, by pulling up a crystal while applying a horizontal magnetic field with a pair of coils dipped in liquid He in a vertically movable cryostat. CONSTITUTION:A melt 1 consisting of a substance having electric conductivity, e.g. silicon is contained in a crucible 3 provided on a frame 2 under a chamber 9 and pulled up at a given speed while being rotated through a seed crystal 6 supported by a pulling up mechanism 5 and heated with a heater 4 to grow a single crystal 8. On the other hand, a cryostat 13 is simultaneously supported by supports 16 around the chamber 9 and set in a vertically movable manner provided through the vertical shafts 14 and a driving machine 15, and a DC horizontal magnetic field is applied to a pair of superconductive coils 11 dipped in liquid He 12 contained in the cryostat 13 through a DC electric power source to product magnetic viscosity in the melt 1. Thereby heat convection 10 in the melt 1 is suppressed to stably grow a crystal. The cryostat 13 is lowered in the cases of taking out the resultant single crystal, exchanging the crucible 3, etc., to readily carry out these operations.

6. 发明专利

JPS62256791A DEVICE FOR GROWING SINGLE CRYSTAL 失效
公开(公告)号：JPS62256791A
公开(公告)日：1987-11-09
申请号：JP10055586
申请日：1986-04-30
申请人： TOSHIBA CERAMICS CO
发明人： TAKASU SHINICHIRO , TAJI HIDEKAZU , HONMA KAZUMOTO , YAMATO MITSUHIRO
IPC分类号： C30B15/22 , C30B15/00 , C30B15/36 , C30B29/06 , H01L21/18 , H01L21/208
摘要： PURPOSE:To obtain a single crystal having a stabilized structure by specifying the ratio of the diameter of the single crystal to the diameter of a crucible when the single crystal is pulled from the melt of an electrically conductive substance by the Czochralski method. CONSTITUTION:A quartz glass crucible 11 having a radius of (r) is fitted in a carbon crucible holding part 10, and the melt 12 is filled in the crucible. The radius of curvature of the bottom part of the crucible 11 is controlled to rb. Meanwhile, a grown silicon single crystal 13 having a diameter of D is hung from a lifting wire 14 so that the lower surface of the crystal is brought into contact with the surface of the melt 12. The crucible 11 is contained in a cylindrical electric heater 15 having a radius of rh, and the heater 15 is contained in a cylindrical heat insulating member 16 made of carbon. Besides, plate superconductive coils 17 having a radius of rc with low temp. retaining means 18 are opposed to each other on both sides of the insulating member 16 at an interval of L. The relation between D and (r) is preferably controlled to D/2r

7. 发明专利

JPS61261288A APPARATUS FOR PULLING UP SILICON SINGLE CRYSTAL 失效
公开(公告)号：JPS61261288A
公开(公告)日：1986-11-19
申请号：JP10212785
申请日：1985-05-14
申请人： TOSHIBA CERAMICS CO
发明人： YAMATO MITSUHIRO , UYAMA NAGATERU
IPC分类号： C30B29/06 , C30B15/12 , H01L21/18 , H01L21/208
摘要： PURPOSE:The titled apparatus, having an inner crucible having a hole in the interior of a crucible and capable of producing a silicon single crystal having little variation in resistance value and oxygen concentration. CONSTITUTION:A silicon raw material and dopant are filled in a crucible 5, which decompressed while passing an inert gas thereinto. A current is then passed from electrodes 6 and 6 through a carbon heater 7 to melt the raw material in the crucible 5. A supporting axis 3 is lifted to dip the inner crucible 10 in molten silicon 14. A seed crystal 13 is then dipped in the molten silicon 14 in the inner crucible 10 in the state of the rotated crucible 5. The seed crystal 13 is then pulled up while rotating a pulling up axis 11 to grow the aimed silicon single crystal 15. As the pulling up proceeds, the supporting axis 3 is lifted to keep the positional relation between the melt surface of the molten silicon 14 and the inner crucible 10 constant. Thus, the use of the crucible having the double structure provides the production of the silicon single crystals having little variation in resistance value and oxygen concentration and further, the yield of silicon wafers can be improved.

8. 发明专利

JPS6033298A PREPARATION OF SINGLE CRYSTAL SEMICONDUCTOR 失效
公开(公告)号：JPS6033298A
公开(公告)日：1985-02-20
申请号：JP13925983
申请日：1983-07-29
申请人： TOSHIBA CERAMICS CO
发明人： TAJI HIDEKAZU , YAMATO MITSUHIRO , SUZUKI OSAMU , HIGUCHI TAKAYOSHI , UYAMA NAGATERU
IPC分类号： C30B15/00 , C30B15/30 , H01L21/208
摘要： PURPOSE:To prepare a single crystal semiconductor of large caliber and high quality easily by impressing magnetic field in a specified range to molten starting material of semiconductor in a crucible supported freely rotatably and dipping a seed crystal suspended freely rotatably in the molten material and then pulling up. CONSTITUTION:An annular superconductive coil 11 is provided at the sideward position near the surface of melt of molten silicon 9 at the periphery of a chamber 1. Further, the strength of magnetic field can be set optionally by the superconductive coil 11, and the magnetic flux density is made high near the surface of the melt of the molten silicon 9, and the magnetic flux density is made low at the bottom of the crucible 4. If the strength of the magnetic field is regulated to 200-1,000 gauss, vibration of the surface of the melt of molten silicon 9 and fluctuation of the temp. are retarded, therefore, a single crystal silicon having large caliber can be prepd. Moreover, the distribution of temp. in the neighbourhood of boundary surface of crystal growth of molten silicon 9 is made uniform, therefore, generation of unevenness of concn. of impurities in the single crystal silicon 10 is reduced remarkably.

9. 发明专利

JP2556967B2 失效
公开(公告)号：JP2556967B2
公开(公告)日：1996-11-27
申请号：JP10055586
申请日：1986-04-30
申请人： TOSHIBA CERAMICS CO
发明人： TAKASU SHINICHIRO , TAJI HIDEKAZU , PPONMA KAZUMOTO , YAMATO MITSUHIRO
IPC分类号： C30B15/22 , C30B15/00 , C30B15/36 , C30B29/06 , H01L21/18 , H01L21/208

10. 发明专利

JPH03290393A CRUCIBLE FOR PRODUCING SI SINGLE CRYSTAL 失效
公开(公告)号：JPH03290393A
公开(公告)日：1991-12-20
申请号：JP9152190
申请日：1990-04-06
申请人： TOSHIBA CERAMICS CO
发明人： YAMATO MITSUHIRO , KUSAKA HITOSHI
IPC分类号： C30B15/10 , C30B29/06
摘要： PURPOSE:To prevent the intrusion of SiO vapor between both crucibles by disposing a quartz ring on the upper ends of the crucibles comprising a graphite crucible and a quartz crucible fit into the quartz crucible and enabling to cover the upper ends of the cylindrical side walls of both the crucibles. CONSTITUTION:A quartz crucible 1 is fit into a graphite crucible 2 to form a crucible 18 for producing single crystal. A quartz ring 16 is disposed on the upper end of the cylindrical side wall of the crucible 18 to cover the upper end of the cylindrical side wall of the quartz crucible 1 and the upper end of the cylindrical side wall of the graphite crucible 2 with the quartz ring 16.

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