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1. 发明专利

JPS62200757A MOS-TYPE SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS62200757A
公开(公告)日：1987-09-04
申请号：JP4375186
申请日：1986-02-28
申请人： TOSHIBA CORP , TOSHIBA MICRO CUMPUTER ENG
发明人： ATSUMI SHIGERU , SAITO SHINJI , TANAKA SUMIO , OTSUKA NOBUAKI , YOSHIKAWA KUNIYOSHI , KAMEI TAKASHI
IPC分类号： H01L21/8234 , G11C11/419 , H01L21/8238 , H01L21/8247 , H01L27/088 , H01L27/092 , H01L29/78 , H01L29/788 , H01L29/792
摘要： PURPOSE:To prevent the occurrence of nonuniformity in electric characteristics between transistors in a plurality by a construction wherein a low-concentration diffused region of a drain region of a transistor having an LDD structure is provided in two places for one transistor. CONSTITUTION:First to third semiconductor regions 12-14, which are formed by diffusion of impurities of a second conductivity type, isolated from one another and arranged in a row, are provided on a semiconductor substrate 11 of a first conductivity type, and first and second gate electrodes 17 are provided on the substrate 11 between the first and second semiconductor regions 12 and 13 and between the second and third semiconductor regions 13 and 14, while means 20 to connect electrically the first and third semiconductor regions 12 and 14 and means to connect electrically the first and second gate electrodes 17 are provided. Moreover, fourth and fifth semiconductor regions 18 and 19 wherein impurities of the second conductivity type are diffused in lower concentration than in the first and third semiconductor regions 12 and 14 are provided on the gate electrode 17 side of the first semiconductor region 12 and the third semiconductor region 14, respectively. The first, third, fourth and fifth semiconductor regions 12, 14, 18 and 19 are formed as drain regions, and the second semiconductor region 13 as a source region.

2. 发明专利

JP2015038949A 半導体発光素子及びその製造方法审中-公开
标题翻译：半导体发光元件及其制造方法
公开(公告)号：JP2015038949A
公开(公告)日：2015-02-26
申请号：JP2013261281
申请日：2013-12-18
申请人：株式会社東芝 , Toshiba Corp
发明人： SAITO SHINJI , HASHIMOTO REI , HUANG JONG-IL , NUNOUE SHINYA
IPC分类号： H01L33/32
CPC分类号： H01L33/06 , H01L33/0025 , H01L33/0075 , H01L33/32
摘要：【課題】高効率の半導体発光素子及びその製造方法を提供する。【解決手段】窒化物半導体を含むn形半導体層10と、p形半導体層20と、発光部30と、を含む半導体発光素子において、発光部30は、n形半導体層10とp形半導体層20との間に設けられ530nm以上のピーク波長の光を放出する。発光部30は、n側障壁層BLNと第1発光層EL1とを含む。第1発光層EL1は、n側障壁層BLNとp形半導体層20との間に設けられた第1障壁層BL1と、n側障壁層BLNと第1障壁層BL1との間においてn側障壁層BLNに接する第1井戸層WL1と、第1井戸層WL1と第1障壁層BL1との間に設けられ、Alx1Ga1−x1N(0.15≦̸x1≦̸1)を含む第1AlGaN層ML1と、第1AlGaN層ML1と第1障壁層BL1との間に設けられ、Inya1Ga1−ya1N(0
摘要翻译：要解决的问题：提供一种高效半导体发光元件及其制造方法。解决方案：半导体发光元件包括含有氮化物半导体的n型半导体层10，p型半导体层20和发光部30.发光部30设置在n型半导体层10和p型半导体层20之间，发射峰值波长为530nm以上的光。发光部30包括n侧阻挡层BLN和第一发光层EL1。第一发光层EL1包括：设置在n侧势垒层BLN和p型半导体层20之间的第一势垒层BL1; 与n侧阻挡层BLN和第一阻挡层BL1之间的n侧势垒层BLN接触的第一阱层WL1; 设置在第一阱层WL1和第一势垒层BL1之间并含有AlGaN（0.15≤x1≤1）的第一AlGaN层ML1; 以及设置在第一AlGaN层ML1和第一势垒层BL1之间并含有InGaN（0

3. 发明专利

JP2013145927A Semiconductor light-emitting device 审中-公开
标题翻译：半导体发光器件
公开(公告)号：JP2013145927A
公开(公告)日：2013-07-25
申请号：JP2013094148
申请日：2013-04-26
申请人： Toshiba Corp , 株式会社東芝
发明人： HATTORI YASUSHI , NUNOUE SHINYA , HATAGOSHI GENICHI , SAITO SHINJI , SHINODA NAOMI , YAMAMOTO MASAHIRO
IPC分类号： H01L33/54 , H01L33/50
CPC分类号： H01L2224/48091 , H01L2224/8592 , H01L2924/00014
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting device capable of outputting high luminance light with high efficiency.SOLUTION: A semiconductor light-emitting device includes: a substrate (4) having a plane for mounting semiconductor light-emitting elements; a plurality of semiconductor light-emitting elements (2) mounted on the plane of the substrate and emitting light within the range from ultraviolet light to visible light; and a stacked structure provided on the substrate so as to cover the plurality of semiconductor light-emitting elements. The stacked structure includes: a plurality of first light transparent layers (31); a phosphor layer (32) provided on the plurality of first light transparent layers, having an end portion that reaches the plane of the substrate, and containing a phosphor and a base material; and a second light transparent layer (33) provided on the phosphor layer and having an end portion that reaches the plane of the substrate.
摘要翻译：要解决的问题：提供一种能够以高效率输出高亮度光的半导体发光装置。解决方案：一种半导体发光装置，包括：具有用于安装半导体发光元件的平面的基板（4）多个半导体发光元件（2），其安装在所述基板的平面上，并且在从紫外线到可见光的范围内发光; 以及设置在基板上以覆盖多个半导体发光元件的堆叠结构。层叠结构包括：多个第一透光层（31）; 设置在所述多个第一透光层上的荧光体层（32），其具有到达所述基板的平面的端部，并且含有荧光体和基材; 以及设置在荧光体层上并具有到达基板平面的端部的第二透光层（33）。

4. 发明专利

JP2013070099A Method for manufacturing semiconductor light-emitting element 审中-公开
标题翻译：制造半导体发光元件的方法
公开(公告)号：JP2013070099A
公开(公告)日：2013-04-18
申请号：JP2013001205
申请日：2013-01-08
申请人： Toshiba Corp , 株式会社東芝
发明人： TACHIBANA KOICHI , NAKO HAJIME , SAITO SHINJI , NUNOE SHINYA , HATAKOSHI GENICHI
IPC分类号： H01L33/32 , H01L21/205 , H01L33/22 , H01S5/343
摘要： PROBLEM TO BE SOLVED: To enable reduction in operation voltage without damage to an active layer.SOLUTION: A method for manufacturing a semiconductor light-emitting element includes: forming an n-type layer composed of a group III-V nitride semiconductor on a substrate in which a first inclination angle in a direction from a {0001} face is 0° or more and 45° or less, a second inclination angle in a direction is 0° or more and 10° or less, and at least one of the first inclination angle and the second inclination angle is not 0°; forming an active layer composed of the group III-V nitride semiconductor on the n-type layer; forming a p-type first layer composed of the group III-V nitride semiconductor on the active layer; forming an uneven layer including the group III-V nitride semiconductor containing at least Al and having an uneven shape on its top face, on the p-type first layer; and forming a p-type contact layer composed of the group III-V nitride semiconductor on the uneven layer. The uneven layer has a p-type impurity concentration lower than that of the p-type contact layer.
摘要翻译：要解决的问题：能够降低工作电压而不损坏有源层。解决方案：一种制造半导体发光元件的方法包括：在基板上形成由III-V族氮化物半导体构成的n型层，其中沿<1-100>方向的第一倾斜角从 ä0001}面为0°以上且45°以下，在<11-20>方向上的第二倾斜角为0°以上且10°以下，第一倾斜角和第二倾斜角中的至少一个倾角不为0°; 在n型层上形成由III-V族氮化物半导体构成的有源层; 在有源层上形成由III-V族氮化物半导体构成的p型第一层; 在p型第一层上形成包含至少包含Al且在其顶面上具有不均匀形状的III-V族氮化物半导体的不均匀层; 以及在所述凹凸层上形成由III-V族氮化物半导体构成的p型接触层。不均匀层的p型杂质浓度比p型接触层低。版权所有（C）2013，JPO＆INPIT

5. 发明专利

JP2012069970A Semiconductor device 审中-公开
标题翻译：半导体器件
公开(公告)号：JP2012069970A
公开(公告)日：2012-04-05
申请号：JP2011240549
申请日：2011-11-01
申请人： Toshiba Corp , 株式会社東芝
发明人： TACHIBANA KOICHI , SAITO SHINJI , NUNOE SHINYA
IPC分类号： H01S5/323
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device having high reliability.SOLUTION: A semiconductor device comprises: an n-type cladding layer 13 provided above a substrate 11; an n-type guide layer 14 provided on the n-type cladding layer 13; an active layer 15 provided on the n-type guide layer 14; a first p-type guide layer 16 provided on the active layer 15; an overflow prevention layer 17 provided on the first p-type guide layer 16; a second p-type guide layer 18 provided on the overflow prevention layer 17; and a p-type cladding layer 19 provided on the second p-type guide layer 18. Each of the layers includes a laser diode composed of a Group III-V nitride-based compound semiconductor, a first protective layer 51 of aluminum-containing nitride provided on the emission surface of the laser diode, and a second protective layer 52 of silicon-containing nitride that is provided on the first protective layer 51 and has a different refractive index from the first protective layer 51. The film thickness of the first protective layer and the second protective layer ranges from 0.25 nm or more to 50 nm or less respectively.
摘要翻译：要解决的问题：提供具有高可靠性的半导体器件。解决方案：半导体器件包括：设置在衬底11上方的n型覆层13; 设置在n型包覆层13上的n型引导层14; 设置在n型引导层14上的有源层15; 设置在有源层15上的第一p型引导层16; 设置在第一p型引导层16上的溢出防止层17; 设置在溢流防止层17上的第二p型引导层18; 以及设置在第二p型引导层18上的p型覆层19.每个层包括由III-V族氮化物基化合物半导体构成的激光二极管，含铝氮化物的第一保护层51 设置在激光二极管的发射表面上，以及设置在第一保护层51上并且具有与第一保护层51不同的折射率的含硅氮化物的第二保护层52.第一保护层层和第二保护层分别为0.25nm以上至50nm以下。版权所有（C）2012，JPO＆INPIT

6. 发明专利

JP2012059384A Light emitter and light emitting device 有权
标题翻译：发光二极管和发光装置
公开(公告)号：JP2012059384A
公开(公告)日：2012-03-22
申请号：JP2010198633
申请日：2010-09-06
申请人： Toshiba Corp , 株式会社東芝
发明人： SAITO SHINJI , HATTORI YASUSHI , HASHIMOTO REI , NUNOGAMI SHINYA
IPC分类号： F21V8/00 , F21S2/00 , F21Y101/02 , G02B6/00
CPC分类号： H05B33/145
摘要： PROBLEM TO BE SOLVED: To provide a light emitter of fiber shape that achieves miniaturization and thin wire, and to provide a light emitting device using the same.SOLUTION: The light emitter has a core section containing a light emitting material which absorbs excitation light and emits light with a wavelength longer than the excitation light, and a clad section which is installed at the outside of the core section and in which a plurality of second regions having a higher refractive index than a first region are periodically formed in the first region having a refractive index same as or more than the core section, and has a fiber shape. Further, a light emitting device using the light emitter is provided.
摘要翻译：要解决的问题：提供实现小型化和细线的纤维形状的发光体，并提供使用其的发光装置。解决方案：光发射器具有包含吸收激发光并发射比激发光长的波长的光的发光材料的芯部，以及安装在芯部外侧的包层部，在具有与芯部相同或更大的折射率的第一区域中周期性地形成具有比第一区域更高的折射率的多个第二区域，并且具有纤维形状。此外，提供了使用发光体的发光装置。版权所有（C）2012，JPO＆INPIT

7. 发明专利

JP2011187361A Light emitting device, display device, emitter, and method for manufacturing emitter 有权
标题翻译：发光装置，显示装置，发光器及其制造方法
公开(公告)号：JP2011187361A
公开(公告)日：2011-09-22
申请号：JP2010052781
申请日：2010-03-10
申请人： Toshiba Corp , 株式会社東芝
发明人： SAITO SHINJI , HATTORI YASUSHI , HARADA YOSHIYUKI , NUNOGAMI SHINYA
IPC分类号： F21V9/10 , F21S2/00 , F21V9/16 , F21V17/00 , F21Y101/02
CPC分类号： G03B21/204 , F21K9/232 , F21K9/64 , H01L33/504
摘要： PROBLEM TO BE SOLVED: To provide a light emitting device in which a plurality of emitters are arranged so as not to be mutually overlapped and which is easy to manufacture. SOLUTION: The light emitting device includes: a light source to emit excitation light; a substrate having a concavo-convex shape in which a first surface and a second surface crossing the first surface are periodically formed; a first phosphor layer which is formed on the first surface and absorbs the excitation light to emit a first fluorescence; and a second phosphor layer which is formed on the second surface and absorbs the excitation light, and emits a second fluorescence of a wavelength different from the first fluorescence. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：解决的问题：提供一种发光装置，其中多个发射器被布置为不相互重叠并且易于制造。解决方案：发光器件包括：发射激发光的光源; 具有凹凸形状的基板，其中周期性地形成与第一表面交叉的第一表面和第二表面; 第一荧光体层，其形成在第一表面上并吸收激发光以发射第一荧光; 以及第二荧光体层，其形成在第二表面上并吸收激发光，并且发射与第一荧光不同的波长的第二荧光。版权所有（C）2011，JPO＆INPIT

8. 发明专利

JP2011138658A Light emitting device 有权
标题翻译：发光装置
公开(公告)号：JP2011138658A
公开(公告)日：2011-07-14
申请号：JP2009297069
申请日：2009-12-28
申请人： Toshiba Corp , 株式会社東芝
发明人： HATTORI YASUSHI , TOYAMA MASAKI , SAITO SHINJI , NUNOGAMI SHINYA , SUGAI MAKI , HASHIMOTO REI
IPC分类号： F21S2/00 , F21V7/09 , F21V7/22 , F21Y101/02 , H01S5/022
CPC分类号： F21K9/68 , G02F1/133615 , G02F2001/133614
摘要： PROBLEM TO BE SOLVED: To provide a light emitting device in which a semiconductor laser diode is used as a light source and which efficiently obtains linear visible light.
SOLUTION: The light emitting device includes a semiconductor laser diode that emits a laser beam; first and second sidewalls that are disposed along a central beam axis of the laser beam with opposite each other; a phosphor layer that is provided between the first and second sidewalls, the phosphor layer including an incidence surface of the laser beam, the incidence surface being provided while inclined with respect to the central beam axis, the phosphor layer absorbing the laser beam to emit visible light on the incidence surface side; a slit that is provided on the incidence surface side of the phosphor layer to take out the visible light, the slit including a longitudinal direction and a crosswise direction, the longitudinal direction being disposed along a direction of the central beam axis; and a reflector that is provided on the slit side of the semiconductor laser diode so as not to intersect the central beam axis, the reflector reflecting part of the laser beam toward the phosphor layer.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：解决的问题：提供一种半导体激光二极管用作光源并有效获得线状可见光的发光器件。解决方案：发光器件包括发射激光束的半导体激光二极管; 第一和第二侧壁沿着激光束的中心束轴设置，彼此相对; 设置在第一和第二侧壁之间的磷光体层，所述荧光体层包括激光束的入射表面，所述入射表面相对于所述中心束轴倾斜设置，所述荧光体层吸收所述激光束以发射可见光光在入射面一侧; 狭缝，其设置在所述荧光体层的入射面侧以取出所述可见光，所述狭缝包括纵向和横向，所述纵向方向沿着所述中心射束轴线的方向设置; 以及设置在半导体激光二极管的狭缝侧以不与中心束轴相交的反射器，反射器将激光束的一部分反射向荧光体层。版权所有（C）2011，JPO＆INPIT

9. 发明专利

JP2010056003A Light-emitting device, and lighting device 有权
标题翻译：发光装置和照明装置
公开(公告)号：JP2010056003A
公开(公告)日：2010-03-11
申请号：JP2008221592
申请日：2008-08-29
申请人： Toshiba Corp , 株式会社東芝
发明人： SATO TAKAHIRO , SAITO SHINJI , NUNOGAMI SHINYA , HATTORI YASUSHI , SUGAI MAKI
IPC分类号： F21V8/00 , F21Y101/02 , H01S5/022
CPC分类号： G02B6/001 , G02B6/0096 , G02F1/133603 , G02F1/133609 , G02F2001/133614 , G02F2201/02
摘要： PROBLEM TO BE SOLVED: To provide a light-emitting device capable of restraining color unevenness at high luminosity and light-emitting white light, and to provide a lighting device. SOLUTION: The light-emitting device includes: a first laser light source; a first diffusion section arranged along an optical axis of first light emitted from the first laser light source and generating second light emitted in a direction different from the optical axis direction of the first light from the first light and raising a generating ratio of the second light from the first light in comparison with a section where intensity of the first light is high at a section where intensity of the first light is low; and a first wavelength conversion section arranged along the first diffusion section and absorbing the second light and emitting third light with a wavelength different from the second light. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种能够抑制高亮度下的颜色不均匀性和发光白光的发光装置，并提供照明装置。
解决方案：发光装置包括：第一激光光源; 沿着从第一激光光源发射的第一光的光轴布置的第一扩散部分，并且产生沿与第一光不同于第一光的光轴方向的方向发射的第二光，并提高第二光的产生比与第一光的强度低的部分中的第一光的强度高的部分相比，从第一光与第一光相比较; 以及第一波长转换部分，沿着第一扩散部分布置并吸收第二光并发射具有不同于第二光的波长的第三光。版权所有（C）2010，JPO＆INPIT

10. 发明专利

JP2009290066A Semiconductor light-emitting device 有权
标题翻译：半导体发光器件
公开(公告)号：JP2009290066A
公开(公告)日：2009-12-10
申请号：JP2008142456
申请日：2008-05-30
申请人： Toshiba Corp , 株式会社東芝
发明人： SAITO SHINJI , HATTORI YASUSHI , SUGAI MAKI , NUNOGAMI SHINYA
IPC分类号： H01S5/022
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting device which can prevent the reliability reduction of not only its semiconductor light-emitting element but also its package, wherein this semiconductor light-emitting element is installed.
SOLUTION: The semiconductor light emitting device includes a semiconductor laser element 2, each transparent material layer 12, whose surface contacts with each outgoing end surface of the semiconductor laser element partially and which transfers each laser light made to outgo from the semiconductor laser element, and each transparent liquid polymer 13, provided in the clearance between each outgoing end surface of the semiconductor laser element and each transparent material layer.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：解决的问题：提供一种半导体发光装置，其能够防止其半导体发光元件的可靠性降低以及其中安装该半导体发光元件的封装。解决方案：半导体发光器件包括半导体激光元件2，每个透明材料层12，其表面部分地与半导体激光器元件的每个出射端面接触，并且传输从半导体激光器出来的每个激光元件和每个透明液体聚合物13，设置在半导体激光元件的每个出射端表面与每个透明材料层之间的间隙中。版权所有（C）2010，JPO＆INPIT

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