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1. 发明专利

JP2012184121A Wafer and crystal growth method 有权
标题翻译：水晶和水晶生长方法
公开(公告)号：JP2012184121A
公开(公告)日：2012-09-27
申请号：JP2011046424
申请日：2011-03-03
申请人： Toshiba Corp , 株式会社東芝
发明人： SHIODA MICHIYA , SUGIYAMA NAOHARU , NUNOGAMI SHINYA
IPC分类号： C30B29/38 , C23C16/34 , H01L21/205
CPC分类号： H01L29/205 , H01L21/02381 , H01L21/02458 , H01L21/02505 , H01L21/0254 , H01L29/2003 , H01L29/66462 , H01L29/7787 , H01L33/007 , H01L33/12
摘要： PROBLEM TO BE SOLVED: To provide a wafer having a high-quality crystal formed on a substrate of silicon or the like, and to provide a crystal growth method and a semiconductor device.SOLUTION: In an embodiment, a wafer including a substrate, a base layer, an underlayer, an intermediate layer and a functional part is provided. The base layer is provided on the main surface of the substrate, and contains a silicon compound. The underlayer is provided on the base layer, and contains GaN. The intermediate layer is provided on the underlayer, and contains a layer containing AIN. The functional part is provided on the intermediate layer, and contains a nitride semiconductor. The concentration of silicon atoms in a first region on the base layer side of the underlayer is higher than the concentration of silicon atoms in a second region on the intermediate layer side of the underlayer. The underlayer has a plurality of voids provided in the first region.
摘要翻译：要解决的问题：提供在硅等的基板上形成的具有高质量晶体的晶片，并提供晶体生长方法和半导体器件。解决方案：在一个实施例中，提供了包括衬底，基底层，底层，中间层和功能部件的晶片。基层设置在基板的主表面上，并含有硅化合物。底层设置在基底层上，并含有GaN。中间层设置在底层上，并含有含有AIN的层。功能部件设置在中间层上，并且包含氮化物半导体。在底层的基底层侧的第一区域中的硅原子的浓度高于底层中间层侧的第二区域中的硅原子的浓度。底层具有设置在第一区域中的多个空隙。版权所有（C）2012，JPO＆INPIT

2. 发明专利

JP2012059384A Light emitter and light emitting device 有权
标题翻译：发光二极管和发光装置
公开(公告)号：JP2012059384A
公开(公告)日：2012-03-22
申请号：JP2010198633
申请日：2010-09-06
申请人： Toshiba Corp , 株式会社東芝
发明人： SAITO SHINJI , HATTORI YASUSHI , HASHIMOTO REI , NUNOGAMI SHINYA
IPC分类号： F21V8/00 , F21S2/00 , F21Y101/02 , G02B6/00
CPC分类号： H05B33/145
摘要： PROBLEM TO BE SOLVED: To provide a light emitter of fiber shape that achieves miniaturization and thin wire, and to provide a light emitting device using the same.SOLUTION: The light emitter has a core section containing a light emitting material which absorbs excitation light and emits light with a wavelength longer than the excitation light, and a clad section which is installed at the outside of the core section and in which a plurality of second regions having a higher refractive index than a first region are periodically formed in the first region having a refractive index same as or more than the core section, and has a fiber shape. Further, a light emitting device using the light emitter is provided.
摘要翻译：要解决的问题：提供实现小型化和细线的纤维形状的发光体，并提供使用其的发光装置。解决方案：光发射器具有包含吸收激发光并发射比激发光长的波长的光的发光材料的芯部，以及安装在芯部外侧的包层部，在具有与芯部相同或更大的折射率的第一区域中周期性地形成具有比第一区域更高的折射率的多个第二区域，并且具有纤维形状。此外，提供了使用发光体的发光装置。版权所有（C）2012，JPO＆INPIT

3. 发明专利

JP2011187361A Light emitting device, display device, emitter, and method for manufacturing emitter 有权
标题翻译：发光装置，显示装置，发光器及其制造方法
公开(公告)号：JP2011187361A
公开(公告)日：2011-09-22
申请号：JP2010052781
申请日：2010-03-10
申请人： Toshiba Corp , 株式会社東芝
发明人： SAITO SHINJI , HATTORI YASUSHI , HARADA YOSHIYUKI , NUNOGAMI SHINYA
IPC分类号： F21V9/10 , F21S2/00 , F21V9/16 , F21V17/00 , F21Y101/02
CPC分类号： G03B21/204 , F21K9/232 , F21K9/64 , H01L33/504
摘要： PROBLEM TO BE SOLVED: To provide a light emitting device in which a plurality of emitters are arranged so as not to be mutually overlapped and which is easy to manufacture. SOLUTION: The light emitting device includes: a light source to emit excitation light; a substrate having a concavo-convex shape in which a first surface and a second surface crossing the first surface are periodically formed; a first phosphor layer which is formed on the first surface and absorbs the excitation light to emit a first fluorescence; and a second phosphor layer which is formed on the second surface and absorbs the excitation light, and emits a second fluorescence of a wavelength different from the first fluorescence. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：解决的问题：提供一种发光装置，其中多个发射器被布置为不相互重叠并且易于制造。解决方案：发光器件包括：发射激发光的光源; 具有凹凸形状的基板，其中周期性地形成与第一表面交叉的第一表面和第二表面; 第一荧光体层，其形成在第一表面上并吸收激发光以发射第一荧光; 以及第二荧光体层，其形成在第二表面上并吸收激发光，并且发射与第一荧光不同的波长的第二荧光。版权所有（C）2011，JPO＆INPIT

4. 发明专利

JP2011176240A Semiconductor light emitting device, and method of manufacturing the same 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：JP2011176240A
公开(公告)日：2011-09-08
申请号：JP2010040969
申请日：2010-02-25
申请人： Toshiba Corp , 株式会社東芝
发明人： HIKOSAKA TOSHITERU , SHIODA MICHIYA , HARADA YOSHIYUKI , NUNOGAMI SHINYA
IPC分类号： H01L33/32 , H01L33/06
CPC分类号： H01L33/06 , H01L33/007 , H01L33/32
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor light emitting device increased in a luminous efficiency, and to provide a method of manufacturing the same. SOLUTION: The semiconductor light emitting device includes an n-type semiconductor layer 20 containing a nitride semiconductor, a p-type semiconductor layer 50 containing a nitride semiconductor, a plurality of barrier layers 41 disposed between the n-type and p-type semiconductor layers and containing a nitride semiconductor, and a well layer 42 disposed among the plurality of barrier layers, having a band gap energy smaller than a band gap energy of the barrier layer, and containing InGaN. At least any of the plurality of barrier layers includes a first layer BL1, a second layer BL2 disposed closer to the p-type semiconductor layer than the first layer, and a third layer BL3 disposed closer to the p-type semiconductor layer than the second layer. The second layer contains Al x Ga 1-x N (0≤x≤0.05) and is larger in band gap energy than the first and third layers. The total thickness of the first and second layers is less than the thickness of the third layer. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供增加发光效率的半导体发光器件，并提供其制造方法。解决方案：半导体发光器件包括含有氮化物半导体的n型半导体层20，包含氮化物半导体的p型半导体层50，设置在n型和p型半导体层之间的多个势垒层41，并且包含氮化物半导体，以及设置在多个势垒层之间的阱层42，其具有小于势垒层的带隙能量的带隙能量，并且包含InGaN。多个阻挡层中的至少任一个包括第一层BL1，比第一层更靠近p型半导体层设置的第二层BL2，以及比第二层更靠近p型半导体层设置的第三层BL3 层。第二层含有比第一层和第三层的带隙能量大的Al（SB）x Ga 1-x N（0≤x≤0.05）。第一层和第二层的总厚度小于第三层的厚度。版权所有（C）2011，JPO＆INPIT

5. 发明专利

JP2011138658A Light emitting device 有权
标题翻译：发光装置
公开(公告)号：JP2011138658A
公开(公告)日：2011-07-14
申请号：JP2009297069
申请日：2009-12-28
申请人： Toshiba Corp , 株式会社東芝
发明人： HATTORI YASUSHI , TOYAMA MASAKI , SAITO SHINJI , NUNOGAMI SHINYA , SUGAI MAKI , HASHIMOTO REI
IPC分类号： F21S2/00 , F21V7/09 , F21V7/22 , F21Y101/02 , H01S5/022
CPC分类号： F21K9/68 , G02F1/133615 , G02F2001/133614
摘要： PROBLEM TO BE SOLVED: To provide a light emitting device in which a semiconductor laser diode is used as a light source and which efficiently obtains linear visible light.
SOLUTION: The light emitting device includes a semiconductor laser diode that emits a laser beam; first and second sidewalls that are disposed along a central beam axis of the laser beam with opposite each other; a phosphor layer that is provided between the first and second sidewalls, the phosphor layer including an incidence surface of the laser beam, the incidence surface being provided while inclined with respect to the central beam axis, the phosphor layer absorbing the laser beam to emit visible light on the incidence surface side; a slit that is provided on the incidence surface side of the phosphor layer to take out the visible light, the slit including a longitudinal direction and a crosswise direction, the longitudinal direction being disposed along a direction of the central beam axis; and a reflector that is provided on the slit side of the semiconductor laser diode so as not to intersect the central beam axis, the reflector reflecting part of the laser beam toward the phosphor layer.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：解决的问题：提供一种半导体激光二极管用作光源并有效获得线状可见光的发光器件。解决方案：发光器件包括发射激光束的半导体激光二极管; 第一和第二侧壁沿着激光束的中心束轴设置，彼此相对; 设置在第一和第二侧壁之间的磷光体层，所述荧光体层包括激光束的入射表面，所述入射表面相对于所述中心束轴倾斜设置，所述荧光体层吸收所述激光束以发射可见光光在入射面一侧; 狭缝，其设置在所述荧光体层的入射面侧以取出所述可见光，所述狭缝包括纵向和横向，所述纵向方向沿着所述中心射束轴线的方向设置; 以及设置在半导体激光二极管的狭缝侧以不与中心束轴相交的反射器，反射器将激光束的一部分反射向荧光体层。版权所有（C）2011，JPO＆INPIT

6. 发明专利

JP2011124589A Semiconductor substrate and semiconductor light-emitting element 有权
标题翻译：半导体衬底和半导体发光元件
公开(公告)号：JP2011124589A
公开(公告)日：2011-06-23
申请号：JP2011006382
申请日：2011-01-14
申请人： Toshiba Corp , 株式会社東芝
发明人： TACHIBANA KOICHI , HONGO CHIE , NUNOGAMI SHINYA , ONOMURA MASAAKI
IPC分类号： H01S5/323 , H01L21/205 , H01L21/331 , H01L21/338 , H01L29/205 , H01L29/737 , H01L29/778 , H01L29/812 , H01L33/00 , H01L33/16 , H01L33/32
CPC分类号： H01L33/32 , C30B25/18 , C30B25/20 , C30B29/406 , H01L21/02389 , H01L21/02433 , H01L21/02458 , H01L21/02507 , H01L21/0254 , H01L21/02576 , H01L21/02584 , H01L21/0262 , H01L29/045 , H01L29/2003 , H01L29/205 , H01L29/7787 , H01L29/812 , H01L29/861 , H01L33/0075 , H01L33/16 , H01S5/3202 , H01S5/32341
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor substrate in which the planarity of each semiconductor layer that crystal-grows on a GaN substrate is improved, as much as equivalent to the size of a semiconductor element, and to provide a semiconductor light-emitting element and a semiconductor element having high-performance characteristics, with the semiconductor substrate as a base. SOLUTION: A substrate 11, a nitride III-V compound semiconductor single-crystal layer 12 laminated on the substrate 11, and a layer 10 containing impurity elements of from 5x10 17 cm -3 or more to 2x10 19 cm -3 or less provided between the substrate 11 and the laer 12 are contained. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：解决的问题：提供一种半导体衬底，其中在GaN衬底上晶体生长的每个半导体层的平面度得到改善，与半导体元件的尺寸相同，并且提供半导体光以半导体衬底为基底的高性能特性的半导体元件。解决方案：层叠在基板11上的基板11，氮化物III-V化合物半导体单晶层12以及含有5×10 17个以上的杂质元素的层10，包含设置在基板11和拉尔12之间的3 或更大到2×10 30 / SP> 3 / SP SP。版权所有（C）2011，JPO＆INPIT

7. 发明专利

JP2010056277A Light-emitting device and method of manufacturing the same 有权
标题翻译：发光装置及其制造方法
公开(公告)号：JP2010056277A
公开(公告)日：2010-03-11
申请号：JP2008219393
申请日：2008-08-28
申请人： Toshiba Corp , 株式会社東芝
发明人： MITSUISHI IWAO , NUNOGAMI SHINYA , HATTORI YASUSHI , KONNO KUNIAKI
IPC分类号： H01L33/48
CPC分类号： F21K9/00 , H01L33/507 , H01L2224/45144 , H01L2224/48091 , H01L2924/3511 , H01L2924/00014 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a light-emitting device which is capable of providing with a special distribution in the irradiation pattern thereof and which suppresses deterioration in transmission of resin and emitting efficiency of phosphorous body while being capable of outputting high-intensity light with a high emission efficiency. SOLUTION: The light-emitting device is provided with a substrate 1 provided with a recess 3 on the surface thereof, a light-emitting element 10 which is sealed in the recess by a resin to generate blue light or near-ultraviolet light, a resin sheet 17 which is formed deformably on the substrate so as to cover the light-emitting element and transmits light generated from the light-emitting element in a first region above the light-emitting element, a first transmitting layer 21 which is formed to be hemispherical on the first region of the resin sheet so as to transmit light generated from the light emitting element, a color conversion layer 23 which comprises a phosphor for converting the transmitted light into light different in the wavelength thereof and a transmitting member for transmitting the light whose wavelength is converted, and covers the first transparent layer in such a manner that an end part reaches an upper surface of the resin sheet, and a second transmitting layer 25 which covers the color conversion layer so that the end part reaches the upper surface of the resin sheet and transmits the light generated from the light-emitting element. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：解决问题的方案为了提供一种能够在其照射图案中具有特殊分布的发光装置，并且能够抑制树脂的透光性劣化和磷体的发光效率，具有高排放效率的强度光。解决方案：发光装置设置有在其表面上设置有凹部3的基板1，发光元件10，其被树脂密封在凹部中以产生蓝光或近紫外光在基板上可变形地覆盖发光元件并在发光元件上方的第一区域中透过从发光元件产生的光的树脂片17;形成的第一透射层21 在树脂片的第一区域上是半球形的，以便透射从发光元件产生的光;颜色转换层23，其包括用于将透射光转换成不同于其波长的光的荧光体和用于透射的透射构件其波长被转换的光并且以使得端部到达树脂片的上表面的方式覆盖第一透明层，以及第二透射层 25，其覆盖颜色转换层，使得端部到达树脂片的上表面并透射从发光元件产生的光。版权所有（C）2010，JPO＆INPIT

8. 发明专利

JP2010056003A Light-emitting device, and lighting device 有权
标题翻译：发光装置和照明装置
公开(公告)号：JP2010056003A
公开(公告)日：2010-03-11
申请号：JP2008221592
申请日：2008-08-29
申请人： Toshiba Corp , 株式会社東芝
发明人： SATO TAKAHIRO , SAITO SHINJI , NUNOGAMI SHINYA , HATTORI YASUSHI , SUGAI MAKI
IPC分类号： F21V8/00 , F21Y101/02 , H01S5/022
CPC分类号： G02B6/001 , G02B6/0096 , G02F1/133603 , G02F1/133609 , G02F2001/133614 , G02F2201/02
摘要： PROBLEM TO BE SOLVED: To provide a light-emitting device capable of restraining color unevenness at high luminosity and light-emitting white light, and to provide a lighting device. SOLUTION: The light-emitting device includes: a first laser light source; a first diffusion section arranged along an optical axis of first light emitted from the first laser light source and generating second light emitted in a direction different from the optical axis direction of the first light from the first light and raising a generating ratio of the second light from the first light in comparison with a section where intensity of the first light is high at a section where intensity of the first light is low; and a first wavelength conversion section arranged along the first diffusion section and absorbing the second light and emitting third light with a wavelength different from the second light. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种能够抑制高亮度下的颜色不均匀性和发光白光的发光装置，并提供照明装置。
解决方案：发光装置包括：第一激光光源; 沿着从第一激光光源发射的第一光的光轴布置的第一扩散部分，并且产生沿与第一光不同于第一光的光轴方向的方向发射的第二光，并提高第二光的产生比与第一光的强度低的部分中的第一光的强度高的部分相比，从第一光与第一光相比较; 以及第一波长转换部分，沿着第一扩散部分布置并吸收第二光并发射具有不同于第二光的波长的第三光。版权所有（C）2010，JPO＆INPIT

9. 发明专利

JP2009290066A Semiconductor light-emitting device 有权
标题翻译：半导体发光器件
公开(公告)号：JP2009290066A
公开(公告)日：2009-12-10
申请号：JP2008142456
申请日：2008-05-30
申请人： Toshiba Corp , 株式会社東芝
发明人： SAITO SHINJI , HATTORI YASUSHI , SUGAI MAKI , NUNOGAMI SHINYA
IPC分类号： H01S5/022
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting device which can prevent the reliability reduction of not only its semiconductor light-emitting element but also its package, wherein this semiconductor light-emitting element is installed.
SOLUTION: The semiconductor light emitting device includes a semiconductor laser element 2, each transparent material layer 12, whose surface contacts with each outgoing end surface of the semiconductor laser element partially and which transfers each laser light made to outgo from the semiconductor laser element, and each transparent liquid polymer 13, provided in the clearance between each outgoing end surface of the semiconductor laser element and each transparent material layer.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：解决的问题：提供一种半导体发光装置，其能够防止其半导体发光元件的可靠性降低以及其中安装该半导体发光元件的封装。解决方案：半导体发光器件包括半导体激光元件2，每个透明材料层12，其表面部分地与半导体激光器元件的每个出射端面接触，并且传输从半导体激光器出来的每个激光元件和每个透明液体聚合物13，设置在半导体激光元件的每个出射端表面与每个透明材料层之间的间隙中。版权所有（C）2010，JPO＆INPIT

10. 发明专利

JP2009049301A Light-emitting device and method of manufacturing the same 有权
标题翻译：发光装置及其制造方法
公开(公告)号：JP2009049301A
公开(公告)日：2009-03-05
申请号：JP2007216034
申请日：2007-08-22
申请人： Toshiba Corp , 株式会社東芝
发明人： ABE SAORI , OKA TOSHIYUKI , NUNOGAMI SHINYA
IPC分类号： H01L33/32 , H01L33/40 , H01L33/50
CPC分类号： G02B6/107 , B82Y20/00 , G02B3/0037 , G02B6/132 , G02B6/4207 , H01L33/20 , H01L33/42 , H01L33/44 , H01L2933/0083
摘要： PROBLEM TO BE SOLVED: To provide a light-emitting device arranged to allow efficient extraction of light from a light-extracting face of a high refractive index substrate, and also to provide a method of manufacturing the light-emitting device. SOLUTION: The light-emitting device is characterized by a supporting substrate provided with a light-emitting layer and a light transmissive layer formed on a light-extracting face of the supporting substrate, in which the light transmissive layer includes a plurality of protrusion structures made of a material having a refractive index lower than that of the supporting substrate and further has periodical distribution structures of refractive index both in an in-plane direction and in a thickness direction. COPYRIGHT: (C)2009,JPO&INPIT

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