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1. 发明专利

JP2015012044A 半導体発光素子审中-公开
标题翻译：半导体发光元件
公开(公告)号：JP2015012044A
公开(公告)日：2015-01-19
申请号：JP2013134282
申请日：2013-06-26
申请人：株式会社東芝 , Toshiba Corp
发明人： KATSUNO HIROSHI , SAITO SHINJI , HASHIMOTO REI , HUANG JONG-IL , NUNOUE SHINYA
IPC分类号： H01L33/08 , H01L33/38 , H01L33/42 , H01L33/48
CPC分类号： H01L25/0756 , H01L33/382 , H01L33/387 , H01L33/42 , H01L33/62 , H01L2224/32145 , H01L2924/0002 , H01L2924/00
摘要：【課題】光取り出し効率を向上させ、色割れを抑制することができる半導体発光素子を提供する。【解決手段】電極と、第1積層体10と、第2積層体20と、第1光透過電極41と、第1配線電極46と、を備えた半導体発光素子110において、第1積層体10は、第1半導体層11と、第2半導体層13と、第1発光層15とを含み、第2半導体層13は、第1半導体層11と電極との間に設けられ、第1発光層15は、第1半導体層11と第2半導体層13との間に設けられ、第2積層体20は、第3半導体層21と、第4半導体層23と、第2発光層25と、を含む。第3半導体層21は、第2半導体層13と電極との間に設けられる。第4半導体層23は、第3半導体層21と反射電極51との間に設けられる。第2発光層25は、第3半導体層21と第4半導体層23との間に設けられる。第1配線電極46は、第2半導体層13と第3半導体層21との間に設けられる。【選択図】図1
摘要翻译：要解决的问题：提供一种能够提高光提取效率并防止分色的半导体发光元件。解决方案：半导体发光元件110包括电极，第一叠层10，第二叠层20，第一光发射电极41和第一布线电极46.第一堆叠10包括第一半导体层11，第二半导体层13和第一发光层15.第二半导体层13设置在第一半导体层 11和电极，第一发光层15设置在第一半导体层11和第二半导体层13之间。第二堆叠20包括第三半导体层21，第四半导体层23和第二半导体层23。第三半导体层21设置在第二半导体层13和电极之间，第四半导体层23设置在第二半导体层23之间第三半导体层21和反射电极51.第二发光层25设置在第三半导体层21和第四半导体层23之间。第一布线电极46设置在第二半导体层13和第三半导体层13之间。第21层。

2. 发明专利

JP2014179628A Semiconductor element and nitride semiconductor wafer 有权
标题翻译：半导体元件和氮化物半导体波导
公开(公告)号：JP2014179628A
公开(公告)日：2014-09-25
申请号：JP2014081768
申请日：2014-04-11
申请人： Toshiba Corp , 株式会社東芝
发明人： HUNG HUNG , SUGIYAMA NAOJI , YOSHIDA GAKUSHI , HIKOSAKA TOSHIKI , HARADA YOSHIYUKI , NUNOUE SHINYA
IPC分类号： H01L33/32 , H01L21/20 , H01L21/205 , H01L21/338 , H01L29/205 , H01L29/207 , H01L29/778 , H01L29/812 , H01L31/10 , H01L33/12 , H01L33/22
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor element with small dislocation and a nitride semiconductor wafer.SOLUTION: There is provided a semiconductor element including a function layer of a nitride semiconductor. The function layer is provided on a nitride semiconductor layer including a first laminated body. The first laminated body is provided on a primary surface of a substrate. The laminated body includes a first lower layer, first intermediate layer, and a first upper layer. The first lower layer contains Si with a first concentration and has a first thickness. The first intermediate layer is provided on the first lower layer to be in contact with the first lower layer, contains Si with a second concentration lower than the first concentration, and has a second thickness thicker than the first thickness. The first upper layer is provided on the first intermediate layer to be in contact with the first intermediate layer, contains Si with a third concentration lower than the second concentration, and has a third thickness. The first lower layer includes discontinuous island portions provided on a ground layer to be in contact with the ground layer and containing Si.
摘要翻译：要解决的问题：提供具有小位错的半导体元件和氮化物半导体晶片。解决方案：提供了包括氮化物半导体的功能层的半导体元件。功能层设置在包括第一层叠体的氮化物半导体层上。第一层叠体设置在基板的主表面上。层叠体包括第一下层，第一中间层和第一上层。第一下层含有第一浓度的Si并具有第一厚度。第一中间层设置在与第一下层接触的第一下层上，含有第二浓度低于第一浓度的Si，并且具有比第一厚度厚的第二厚度。第一上层设置在与第一中间层接触的第一中间层上，含有第三浓度低于第二浓度的Si，并具有第三厚度。第一下层包括设置在接地层上并与接地层接触并包含Si的不连续岛部分。

3. 发明专利

JP2014154727A Semiconductor light-emitting element 有权
标题翻译：半导体发光元件
公开(公告)号：JP2014154727A
公开(公告)日：2014-08-25
申请号：JP2013023653
申请日：2013-02-08
申请人： Toshiba Corp , 株式会社東芝
发明人： KATSUNO HIROSHI , MIKI SATOSHI , ITO TOSHIHIDE , NUNOUE SHINYA
IPC分类号： H01L33/32
CPC分类号： H01L33/405 , H01L33/0079 , H01L33/38 , H01L33/46 , H01L2933/0016
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element that has high luminous efficiency and is practical.SOLUTION: There is provided a semiconductor light-emitting element including first to third metal layers, a semiconductor light-emitting portion, and an insulating portion. The semiconductor light-emitting portion is spaced apart from the first metal layer in a first direction. The second metal layer is provided between the first metal layer and the semiconductor light-emitting portion, and is light reflective. The second metal layer includes a contact metal portion in contact with the semiconductor light-emitting portion and a peripheral metal portion including an outer edge portion around the contact metal portion. The third metal layer is provided between the first metal layer and the semiconductor light-emitting portion, and is light reflective. The third metal layer includes an inner-side portion, an intermediate portion that overlaps with the semiconductor light-emitting portion but does not overlap with the outer edge portion, and an outer-side portion outside the semiconductor light-emitting portion. The insulating portion is provided between the intermediate portion and the semiconductor light-emitting portion, between the inner-side portion and the semiconductor light-emitting portion, and between the outer-side portion and the first metal layer.
摘要翻译：要解决的问题：提供一种具有高发光效率和实用性的半导体发光元件。解决方案：提供一种半导体发光元件，包括第一至第三金属层，半导体发光部分和绝缘体一部分。半导体发光部分在第一方向上与第一金属层间隔开。第二金属层设置在第一金属层和半导体发光部之间，是光反射性的。第二金属层包括与半导体发光部分接触的接触金属部分和包括接触金属部分周围的外边缘部分的周边金属部分。第三金属层设置在第一金属层和半导体发光部之间，并且是光反射的。第三金属层包括内侧部分，与半导体发光部分重叠但不与外边缘部分重叠的中间部分，以及半导体发光部分外侧的外侧部分。绝缘部设置在中间部分和半导体发光部分之间，在内侧部分和半导体发光部分之间以及外侧部分和第一金属层之间。

4. 发明专利

JP2014130897A Semiconductor light-emitting element and method of manufacturing the same 有权
标题翻译：半导体发光元件及其制造方法
公开(公告)号：JP2014130897A
公开(公告)日：2014-07-10
申请号：JP2012287340
申请日：2012-12-28
申请人： Toshiba Corp , 株式会社東芝
发明人： NAGO HAJIME , KIMURA SHIGEYA , HARADA YOSHIYUKI , NUNOUE SHINYA
IPC分类号： H01L33/32 , H01L21/205 , H01S5/343
CPC分类号： H01L33/06 , B82Y20/00 , H01L33/007 , H01L33/025 , H01L33/14 , H01L33/325 , H01S5/3211 , H01S5/3407 , H01S5/34333 , H01S5/34346
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element having high luminous efficiency and a method of manufacturing the same.SOLUTION: There is provided a semiconductor light-emitting element including an n-type semiconductor layer, a p-type semiconductor layer, and a light-emitting layer. The p-type semiconductor layer includes a first p-side layer composed of AlGaN (0≤x1
摘要翻译：要解决的问题：提供一种具有高发光效率的半导体发光元件及其制造方法。解决方案提供一种半导体发光元件，其包括n型半导体层，p型半导体层，和发光层。 p型半导体层包括由AlGaN（0≤x1<1）构成的第一p侧层，由AlGaN（0

5. 发明专利

JP2014107291A Semiconductor light-emitting element and method of manufacturing the same 有权
标题翻译：半导体发光元件及其制造方法
公开(公告)号：JP2014107291A
公开(公告)日：2014-06-09
申请号：JP2012256725
申请日：2012-11-22
申请人： Toshiba Corp , 株式会社東芝
发明人： YAMADA SHINJI , KATSUNO HIROSHI , MIKI SATOSHI , NUNOUE SHINYA
IPC分类号： H01L33/62 , H01L33/50 , H01L33/64
CPC分类号： H01L33/50 , H01L33/36 , H01L33/38 , H01L33/382 , H01L33/385 , H01L33/44 , H01L33/486 , H01L33/505 , H01L33/647 , H01L2924/0002 , H01L2933/0075 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element and a method of manufacturing the same.SOLUTION: There is provided a semiconductor light-emitting element including a laminated body, a wavelength conversion layer, a first metal layer, and a first insulating portion. The laminated body includes a first semiconductor layer, a second semiconductor layer, and a first light-emitting layer. The first semiconductor layer includes a first side surface. The light-emitting layer is provided between the first semiconductor layer and the second semiconductor layer. The metal layer includes a first side-surface portion and a first bottom-surface portion. The first side-surface portion is faced to at least a part of the wavelength conversion layer and the first side surface. The first bottom-surface portion is faced to the second semiconductor layer. The first metal layer is electrically connected to the second semiconductor layer. The first insulating portion is provided between the first side surface and the first side-surface portion and between the wavelength conversion layer and the first side-surface portion, and electrically insulates the first semiconductor layer and the first metal layer.
摘要翻译：要解决的问题：提供一种半导体发光元件及其制造方法。解决方案：提供一种半导体发光元件，其包括层叠体，波长转换层，第一金属层和第一绝缘部分。层叠体包括第一半导体层，第二半导体层和第一发光层。第一半导体层包括第一侧表面。发光层设置在第一半导体层和第二半导体层之间。金属层包括第一侧表面部分和第一底表面部分。第一侧面部分面向波长转换层和第一侧表面的至少一部分。第一底表面部分面向第二半导体层。第一金属层电连接到第二半导体层。第一绝缘部分设置在第一侧表面和第一侧表面部分之间以及波长转换层和第一侧表面部分之间，并且使第一半导体层和第一金属层电绝缘。

6. 发明专利

JP2014086490A Light emission power generation module and light emission power generation device 审中-公开
标题翻译：光发射发电模块和发光发电装置
公开(公告)号：JP2014086490A
公开(公告)日：2014-05-12
申请号：JP2012232724
申请日：2012-10-22
申请人： Toshiba Corp , 株式会社東芝
发明人： HASHIMOTO REI , HUANG JONG-IL , SAITO SHINJI , NUNOUE SHINYA
IPC分类号： H01L31/042 , H01L33/00 , H01L33/02 , H01L33/60 , H01L33/62
CPC分类号： H05B33/0845 , Y02E10/52
摘要： PROBLEM TO BE SOLVED: To provide a light emission power generation module and a light emission power generation device using a photoelectric conversion element for power generation and light emission.SOLUTION: The light emission power generation module includes: a photoelectric conversion element for light emission and power generation; a light emission control part for controlling light emission of the photoelectric conversion element; a power generation control part for controlling power generation of the photoelectric conversion element; and a switching part for switching a light emission state and a power generation state of the photoelectric conversion element.
摘要翻译：要解决的问题：提供一种使用光电转换元件进行发电和发光的发光发电模块和发光发电装置。解决方案：发光发电模块包括：用于发光的光电转换元件，发电; 用于控制光电转换元件的发光的发光控制部; 用于控制所述光电转换元件的发电的发电控制部; 以及用于切换光电转换元件的发光状态和发电状态的开关部。

7. 发明专利

JP2014067908A Nitride semiconductor wafer, nitride semiconductor element, and method of manufacturing nitride semiconductor wafer 有权
标题翻译：氮化物半导体膜，氮化物半导体元件和制造氮化物半导体晶体的方法
公开(公告)号：JP2014067908A
公开(公告)日：2014-04-17
申请号：JP2012212884
申请日：2012-09-26
申请人： Toshiba Corp , 株式会社東芝
发明人： YOSHIDA GAKUSHI , HIKOSAKA TOSHIKI , HARADA YOSHIYUKI , SUGIYAMA NAOJI , NUNOUE SHINYA
IPC分类号： H01L21/205 , C23C16/34 , H01L33/32
CPC分类号： H01L29/2003 , H01L21/02104 , H01L21/02381 , H01L21/02458 , H01L21/02505 , H01L21/0254 , H01L21/0262 , H01L29/0649 , H01L29/7786 , H01L33/007 , H01L33/12
摘要： PROBLEM TO BE SOLVED: To provide a nitride semiconductor wafer with suppressed cracks and low dislocation density, a nitride semiconductor element, and a method of manufacturing the nitride semiconductor wafer.SOLUTION: There is provided the nitride semiconductor wafer according to an embodiment, including a silicon substrate, a first buffer portion, a silicon-containing portion, and an upper layer portion. The first buffer portion is provided on the silicon substrate and has first to n-th buffer layers containing a nitride semiconductor. The i-th buffer layer of the first to n-th buffer layers has a lattice length Wi. The (i+1)-th buffer layer provided on the i-th buffer layer has a lattice length W(i+1). In the first to n-th buffer layers, the i-th buffer layer and the (i+1)-th buffer layer satisfy the relationship of (W(i+1)-Wi)/Wi≤0.008. The silicon-containing portion is provided on the first buffer portion. The upper layer portion contains a nitride semiconductor and is provided on the silicon-containing portion.
摘要翻译：要解决的问题：提供具有抑制裂纹和低位错密度的氮化物半导体晶片，氮化物半导体元件和制造氮化物半导体晶片的方法。解决方案：提供根据实施例的氮化物半导体晶片，其包括硅衬底，第一缓冲部分，含硅部分和上层部分。第一缓冲部分设置在硅衬底上，并且具有包含氮化物半导体的第一至第n缓冲层。第一至第n缓冲层的第i个缓冲层具有晶格长度Wi。设置在第i个缓冲层上的第（i + 1）个缓冲层具有晶格长度W（i + 1）。在第一至第n缓冲层中，第i个缓冲层和第（i + 1）个缓冲层满足（W（i + 1）-Wi）/Wi≤0.008的关系。含硅部分设置在第一缓冲部分上。上层部分包含氮化物半导体，并且设置在含硅部分上。

8. 发明专利

JP2014063861A Semiconductor device manufacturing method 有权
标题翻译：半导体器件制造方法
公开(公告)号：JP2014063861A
公开(公告)日：2014-04-10
申请号：JP2012207623
申请日：2012-09-20
申请人： Toshiba Corp , 株式会社東芝
发明人： HUANG JONG-IL , HASHIMOTO REI , SAITO SHINJI , HUNG HUNG , NUNOUE SHINYA
IPC分类号： H01L21/205 , C23C16/34 , H01L21/338 , H01L29/778 , H01L29/812 , H01L33/32 , H01S5/323
CPC分类号： H01L33/0075 , H01L33/007
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method which omits a process and has high producibility.SOLUTION: According to an embodiment, a semiconductor device manufacturing method comprises: preparing a substrate part including a base substrate having a first heat expansion coefficient, an intermediate crystal layer which is arranged on the base substrate and has a first grating constant and has a principal surface including first and second regions and an intermediate region between the first and second regions, and a mask layer arranged on the intermediate region; growing in the first and second regions, first and second lower layers each including a semiconductor crystal having a second heat expansion coefficient larger than the first heat expansion coefficient and a second grating constant larger than the first grating constant; growing first and second upper layers each including a semiconductor crystal, from over the first and second lower layers so as to extend over the mask layer and bringing the first and second upper layers into contact with each other on the mask layer; and lowering temperature to separate the first and second upper layers from each other at a border of the first and second upper layers on the mask layer.
摘要翻译：要解决的问题：提供一种省略工艺并具有高可生产性的半导体器件制造方法。解决方案：根据实施例，半导体器件制造方法包括：制备包括具有第一热膨胀系数的基底基板的基板部分，中间晶体层，其布置在所述基底基板上并具有第一光栅常数并且具有包括第一和第二区域的主表面和所述第一和第二区域之间的中间区域以及布置在所述中间区域上的掩模层; 在第一和第二区域中生长，第一和第二下层各自包括具有大于第一热膨胀系数的第二热膨胀系数的半导体晶体和大于第一光栅常数的第二光栅常数; 生长第一和第二上层，每个包括半导体晶体，从第一和第二下层上延伸以在掩模层上延伸并使第一和第二上层在掩模层上彼此接触; 以及降低温度以在掩模层上的第一和第二上层的边界处彼此分离第一和第二上层。

9. 发明专利

JP2014053607A Semiconductor light-emitting element and method of manufacturing semiconductor light-emitting element 有权
标题翻译：半导体发光元件及制造半导体发光元件的方法
公开(公告)号：JP2014053607A
公开(公告)日：2014-03-20
申请号：JP2013181319
申请日：2013-09-02
申请人： Toshiba Corp , 株式会社東芝
发明人： YOSHIDA GAKUSHI , HIKOSAKA TOSHIKI , HARADA YOSHIYUKI , SUGIYAMA NAOJI , NUNOUE SHINYA
IPC分类号： H01L33/32 , H01L21/205 , H01L21/338 , H01L29/778 , H01L29/812
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element with suppressed cracks and a method of manufacturing the semiconductor light-emitting element.SOLUTION: There is provided a semiconductor light-emitting element including a buffer portion 50 and a light-emitting layer. The buffer portion 50 has first to n-th buffer layers (n is an integer number of 4 or more) containing a nitride semiconductor. An i-th buffer layer (i is an integer number of 1 or more to less than n) of the first to n-th buffer layers has a lattice length Wi in a first direction parallel to a primary surface of the first buffer layer. An (i+1) buffer layer provided on the i-th buffer layer and being in contact with the i-th buffer layer has a lattice length W(i+1) in the first direction. In the first to n-th buffer layers, the i-th buffer layer and the (i+1)-th buffer layer satisfy the following relationship: 0.003≤(W(i+1)-Wi)/Wi≤0.008. The light-emitting layer is provided on the buffer portion.
摘要翻译：要解决的问题：提供具有抑制裂纹的半导体发光元件和制造半导体发光元件的方法。解决方案：提供一种半导体发光元件，其包括缓冲部分50和发光层。缓冲部50具有包含氮化物半导体的第1〜第n缓冲层（n为4以上的整数）。第1〜第n缓冲层的第i个缓冲层（i为1以上且小于n的整数）在与第1缓冲层的主面平行的第1方向上具有晶格长度Wi。设置在第i个缓冲层上并与第i个缓冲层接触的第（i + 1）个缓冲层在第一方向上具有晶格长度W（i + 1）。在第一至第n缓冲层中，第i个缓冲层和第（i + 1）个缓冲层满足以下关系：0.003≤（W（i + 1）-Wi）/Wi≤0.008。发光层设置在缓冲部上。

10. 发明专利

JP2014033232A Semiconductor light-emitting element 有权
标题翻译：半导体发光元件
公开(公告)号：JP2014033232A
公开(公告)日：2014-02-20
申请号：JP2013238147
申请日：2013-11-18
申请人： Toshiba Corp , 株式会社東芝
发明人： TACHIBANA KOICHI , NAGO HAJIME , HIKOSAKA TOSHIKI , KIMURA SHIGEYA , NUNOUE SHINYA
IPC分类号： H01L33/32 , H01L33/06
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element with high luminous efficiency.SOLUTION: A semiconductor light-emitting element includes: an n-type semiconductor layer including an N-type GaN layer; a p-type semiconductor layer composed of GaN; a light-emitting portion provided between the n-type semiconductor layer and the p-type semiconductor layer and including a plurality of quantum well layers; a first layer provided between the light-emitting portion and the p-type semiconductor layer, containing AlGaN having a first Al composition ratio from 0.001 or more to 0.05 or less, and having a thickness from 0.5 nm or more to 5 nm or less; a second layer being in contact with the p-type semiconductor layer between the first layer and the p-type semiconductor layer, and containing AlGaN having a second Al composition ratio from 0.1 or more to 0.2 or less; and an intermediate layer being in contact with the first layer and in contact with a p-side quantum well layer that is closest to the p-type semiconductor layer of the plurality of quantum well layers between the first layer and the light-emitting portion, having a thickness from 3 nm or more to 8 nm or less, and containing InGaN (0≤z1
摘要翻译：要解决的问题：提供具有高发光效率的半导体发光元件。解决方案：半导体发光元件包括：包括N型GaN层的n型半导体层; 由GaN构成的p型半导体层; 设置在n型半导体层和p型半导体层之间并且包括多个量子阱层的发光部分; 所述第一层设置在所述发光部和所述p型半导体层之间，所述第一层含有AlGaN的第一Al组成比为0.001以上且0.05以下，厚度为0.5nm以上至5nm以下的AlGaN; 第二层与第一层和p型半导体层之间的p型半导体层接触，并且含有第二Al组分比为0.1以上至0.2以下的AlGaN; 以及与第一层接触并与第一层和发光部之间的多个量子阱层的p型半导体层最接近的p侧量子阱层接触的中间层，具有3nm以上至8nm以下的厚度，并含有InGaN（0≤z1<1）。 Al组成比从第一层向第二层逐渐增加。

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