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1. 发明专利

JPH0887102A EVALUATING DEVICE FOR PATTERN AND EVALUATING METHOD FOR PATTERN 失效
公开(公告)号：JPH0887102A
公开(公告)日：1996-04-02
申请号：JP22187194
申请日：1994-09-16
申请人： TOSHIBA CORP , TOPCON CORP
发明人： TOJO TORU , TABATA MITSUO , AKENO MASANOBU , WATANABE TOSHIYUKI , WATANABE TOMOHIDE , YAMANAKA EIJI , ITO TSUTOMU , TAYA MAKOTO
IPC分类号： G01N21/956 , G03F1/84 , H01L21/027 , G03F1/08
摘要： PURPOSE: To provide a device and a method to evaluate a pattern with high sensitivity in a wide range even when a mask with a pellicle is used. CONSTITUTION: The device is equipped with a condensing means 4 to condense light from a light source 3 on a sample having a pattern, an objective lens 5 placed in the poststage of the sample to transmit the light which is transmitted through the sample, an aperture member placed in the poststage of the objective lens 5 to reduce the diameter of the light beam transmitted through the objective lens 5, a light-receiving element 6 placed in the poststage of the aperture member to receive the light reduced by the aperture member, and a judging means to evaluate the pattern received by the light-accepting element 6 according to the information corresponding to the pattern. In the aperture member, the numerical aperture can be changed according to whether a pellicle is used or not for the sample.

2. 发明专利

JP2012198436A Method for extracting profile of pattern on photomask, profile extraction device, method for guaranteeing photomask, and method for manufacturing semiconductor device 有权
标题翻译：用于提取光刻胶图案轮廓，轮廓提取装置，保护光刻胶的方法和制造半导体器件的方法
公开(公告)号：JP2012198436A
公开(公告)日：2012-10-18
申请号：JP2011063354
申请日：2011-03-22
申请人： Toshiba Corp , 株式会社東芝
发明人： YAMANAKA EIJI
IPC分类号： G03F1/84 , H01L21/027
CPC分类号： G03F1/86 , G06T7/0004 , G06T7/13 , G06T2207/10061 , G06T2207/30148
摘要： PROBLEM TO BE SOLVED: To provide a profile extraction method capable of exactly extracting a profile of a pattern on a photomask.SOLUTION: According to an embodiment, the profile extraction method includes: a step S2 of acquiring two-dimensional distribution information on secondary electron intensity or reflected electron intensity of a measurement object pattern formed on a photomask, by a scanning electron microscope; a step S3 of, on the basis of the two-dimensional distribution information, extracting edge positions by a first method with respect to edges for correction value acquisition included in the measurement object pattern; a step S4 of, on the basis of the two-dimensional distribution information, extracting edge positions by a second method with respect to the edges for correction value acquisition; a step S5 of acquiring differences between the edge positions extracted by the first method and the edge positions extracted by the second method, as correction values; a step S6 of, on the basis of the two-dimensional distribution information, extracting an edge position of a desired edge included in the measurement object pattern by the second method; and a step S7 of correcting the edge position of the desired edge on the basis of the correction value.
摘要翻译：要解决的问题：提供能够精确地提取光掩模上的图案的轮廓的轮廓提取方法。解决方案：根据实施例，轮廓提取方法包括：通过扫描电子显微镜获取形成在光掩模上的测量对象图案的二次电子强度或反射电子强度的二维分布信息的步骤S2; 基于二维分布信息，通过第一方法相对于包括在测量对象图案中的校正值获取的边缘提取边缘位置的步骤S3; 基于二维分布信息，通过第二方法相对于用于校正值获取的边缘提取边缘位置的步骤S4; 获取通过第一方法提取的边缘位置与由第二方法提取的边缘位置之间的差异的步骤S5作为校正值; 基于二维分布信息的步骤S6，通过第二方法提取包含在测量对象图案中的期望边缘的边缘位置; 以及步骤S7，其基于校正值来校正期望边缘的边缘位置。版权所有（C）2013，JPO＆INPIT

3. 发明专利

JP2006014292A Image data correction method, lithography simulation method, program and mask 有权
标题翻译：图像数据校正方法，光栅模拟方法，程序和掩码
公开(公告)号：JP2006014292A
公开(公告)日：2006-01-12
申请号：JP2005151063
申请日：2005-05-24
申请人： Toshiba Corp , 株式会社東芝
发明人： ASANO MITSUYO , ITO MASAMITSU , YAMANAKA EIJI , YAMAGUCHI SHINJI
IPC分类号： H04N1/387 , G03F1/84 , G03F1/86 , G06T1/00 , G06T3/00
摘要： PROBLEM TO BE SOLVED: To provide an image data correction method, capable of correcting an image pattern using a small data amount at a high speed and with high accuracy. SOLUTION: The method includes a process (S12) of preparing a correction data for correcting a distortion of the image obtained from an image acquisition section; a process (S22) of acquiring a contour data of a desired pattern obtained from the image acquisition section; and a process (S23) of correcting the contour data of the desired pattern by using the correction data. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种图像数据校正方法，其能够以高速度和高精度地使用小数据量来校正图像图案。解决方案：该方法包括：准备用于校正从图像获取部获得的图像的失真的校正数据的处理（S12）获取从图像获取部获得的期望图案的轮廓数据的处理（S22）; 以及通过使用校正数据来校正所需图案的轮廓数据的处理（S23）。版权所有（C）2006，JPO＆NCIPI

4. 发明专利

JP2008026821A Pattern evaluation method and apparatus, and pattern evaluation program 有权
标题翻译：模式评估方法和设备，以及模式评估程序
公开(公告)号：JP2008026821A
公开(公告)日：2008-02-07
申请号：JP2006202384
申请日：2006-07-25
申请人： Toshiba Corp , 株式会社東芝
发明人： YAMANAKA EIJI , ITO MASAMITSU , ASANO MITSUYO , YAMAGUCHI SHINJI
IPC分类号： G03F1/84 , H01L21/027
CPC分类号： G03F1/84
摘要： PROBLEM TO BE SOLVED: To provide a pattern evaluation method by which the comparison of a predicted wafer pattern with a desired wafer pattern can be performed more exactly while also including a position and it becomes possible to more exactly evaluate a mask pattern, and a pattern evaluation apparatus.
SOLUTION: The pattern evaluation method for evaluating the pattern is applied to evaluate a mask pattern formed in an exposure mask. The method includes: generating desired wafer pattern data 15 corresponding to the evaluation position of the mask pattern; generating outline-data 9 of the mask pattern from the image of the mask pattern; searching position offset 13 of mask pattern data 2 and the mask pattern outline data 9; performing lithography simulation from the mask pattern outline data 9; generating predicted wafer pattern data 11 in the case when the mask pattern is transferred onto a wafer; correcting a positional error in wafer pattern data 11, 15 on the basis of the position offset 13; and comparing the wafer pattern data 11, 15 while the positional error is corrected.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：为了提供一种图案评估方法，通过该图案评估方法可以更精确地执行预测的晶片图案与期望的晶片图案的比较，同时还包括位置，并且可以更准确地评估掩模图案，和图案评价装置。
解决方案：应用用于评估图案的图案评估方法来评估在曝光掩模中形成的掩模图案。该方法包括：产生与掩模图案的评估位置对应的期望的晶片图形数据15; 从掩模图案的图像生成掩模图案的轮廓数据9; 搜索掩模图案数据2的位置偏移13和掩模图案轮廓数据9; 从掩模图形轮廓数据9执行光刻模拟; 在将掩模图案转印到晶片上的情况下产生预测晶片图形数据11; 基于位置偏移13来校正晶片图案数据11,15中的位置误差; 并且在校正位置误差的同时比较晶片图形数据11,15。版权所有（C）2008，JPO＆INPIT

5. 发明专利

JP2006343588A METHOD OF EVALUATING MASK PATTERN AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开
公开(公告)号：JP2006343588A
公开(公告)日：2006-12-21
申请号：JP2005169802
申请日：2005-06-09
申请人： TOSHIBA CORP
发明人： KANEMITSU SHINGO , YAMANAKA EIJI
IPC分类号： G03F1/84
摘要： PROBLEM TO BE SOLVED: To make three dimensional lithographic simulation possible. SOLUTION: This pattern evaluation method has a step of obtaining a three-dimensional image including abnormal patterns formed on the photomask substrate; a step of extracting the pattern contour line data from the above three-dimensional image; a step of converting the above contour line data into the graphic data correlating with the optical parameters matching their heights; a step of obtaining the light intensity distribution on the wafer by the lithographic simulation from the above graphic data and the illumination conditions to expose the above photomask, and also obtaining the abnormal pattern image intensity which the above abnormal pattern forms when transferring to the wafer; and a step of deciding go/no-go of the above abnormal pattern. COPYRIGHT: (C)2007,JPO&INPIT

6. 发明专利

JP2005309140A Method for manufacturing photomask, method for determining position of photomask defect correction, and apparatus for determining position of photomask defect correction 审中-公开
标题翻译：光刻胶的制造方法，光斑缺陷修正的位置决定方法，光电子缺陷校正位置的测定方法
公开(公告)号：JP2005309140A
公开(公告)日：2005-11-04
申请号：JP2004126795
申请日：2004-04-22
申请人： Toshiba Corp , 株式会社東芝
发明人： HIRANO TAKASHI , YAMANAKA EIJI
IPC分类号： G03F1/84 , G06K9/00 , G06T7/00 , H01L21/027 , G03F1/08
CPC分类号： G06T7/0006 , G06T2207/30148
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing a photomask to improve the accuracy of estimating the degree of influences when a defect on a photomask is transferred onto a substrate.
SOLUTION: The method includes steps of: detecting a defect in a pattern formed on a photomask (S1); obtaining a pattern image in a first region including the defect (S3); obtaining a pattern contour extraction data from the pattern image (S4); generating a first figure data based on the pattern contour extraction data and the pixel size on the photomask (S5); obtaining a pattern data corresponding to a second region including the first region from the design data of the photomask (S8); generating a second figure data from the pattern data (S9); generating a third figure data by replacing the second figure data with the first figure data only in a region where the first figure data and the second figure data overlap (S12); generating respective transfer patterns of the pattern figures represented by the second figure data and the third figure data (13); and comparing the transfer patterns to determine whether defect correction is necessary or not (S17).
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种制造光掩模的方法，以提高当将光掩模上的缺陷转印到基板上时的影响程度的估计精度。解决方案：该方法包括以下步骤：检测形成在光掩模（S1）上的图案中的缺陷; 在包括缺陷的第一区域中获得图案图像（S3）; 从图案图像获得图案轮廓提取数据（S4）; 基于图案轮廓提取数据和光掩模上的像素尺寸生成第一图形数据（S5）; 从所述光掩模的设计数据获得与包括所述第一区域的第二区域对应的图案数据（S8）; 从所述图案数据生成第二图形数据（S9）; 通过仅在第一图形数据和第二图形数据重叠的区域中用第一图形数据代替第二图形数据来生成第三图形数据（S12）; 生成由第二图形数据和第三图形数据（13）表示的图案图形的各个转印图案。并比较传输模式以确定是否需要缺陷校正（S17）。版权所有（C）2006，JPO＆NCIPI

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