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1. 发明专利

JP2004085339A Method for analyzing impurity in semiconductor sample, and impurity concentrator of semiconductor sample 有权
公开(公告)号：JP2004085339A
公开(公告)日：2004-03-18
申请号：JP2002246167
申请日：2002-08-27
申请人： Toshiba Corp , 株式会社東芝
发明人： YAMADA YUJI , TATEBE TETSUYA , TAKENAKA MIYUKI , KOZUKA SHOJI
IPC分类号： G01N27/62 , G01N1/10 , G01N1/28 , G01N1/36
摘要： PROBLEM TO BE SOLVED: To provide an analysis method for determining metal impurities in a semiconductor thin film containing germanium.
SOLUTION: A solvent L comprising a hydrofluoric acid and a nitric acid is supplied from a solvent supply nozzle 7 onto the surface of an Si-Ge semiconductor sample 5 for etching the surface of the semiconductor sample 5. The etching liquid L is heated for dissolving a dried substance S where an Si constituent is volatilized by a hydrochloric acid supplied from a nozzle 9, and a melt is heated to remove germanium and to create a measurement sample. Since Si and Ge have been removed from the measurement sample, the other impurity elements can be measured by ICP-MS or the like.
COPYRIGHT: (C)2004,JPO

2. 发明专利

JP2002372525A Measuring method of impurity in semiconductor wafer and measuring program of impurity in semiconductor wafer 有权
标题翻译：半导体波导中的测量方法和SEMICONDUCTOR WAFER中的测量程序
公开(公告)号：JP2002372525A
公开(公告)日：2002-12-26
申请号：JP2001181790
申请日：2001-06-15
申请人： Toshiba Corp , 株式会社東芝
发明人： TOMITA MITSUHIRO , SUZUKI MASAMICHI , TATEBE TETSUYA , KOZUKA SHOJI
IPC分类号： G01N1/28 , G01N23/203 , G01N23/225 , G01N27/62 , G01N31/00 , G01N33/00 , H01L21/66
CPC分类号： G01N23/225 , G01N23/203 , Y10T436/24
摘要： PROBLEM TO BE SOLVED: To provide a measuring method of impurities in a semiconductor wafer capable of determining by which technique the true or the most probably true depth direction concentration distribution is acquired, from among a plurality of techniques for acquiring the depth direction concentration distributions. SOLUTION: This method is characterized by having a process for acquiring the reference surface concentration by measuring the surface concentration of the impurities in the semiconductor wafer by a chemical analysis method, a nuclear reaction method, or a Rutherford back scattering spectroscopy, and measuring the depth direction concentration distribution of the impurities in the semiconductor wafer by the plurality of techniques, a process 4 for converting the multiple depth direction concentration distributions into surface concentrations, respectively, and a process for selecting the most similar value to the reference surface concentration from among the converted surface concentrations, and determining the depth direction concentration distribution imparting the selected surface concentration as the accurate depth direction concentration distribution.
摘要翻译：要解决的问题：从用于获取深度方向浓度分布的多种技术中，提供能够确定由哪种技术获得真实或最可能的真深度方向浓度分布的半导体晶片中的杂质的测量方法。解决方案：该方法的特征在于具有通过化学分析法，核反应法或卢瑟福背散射光谱法测量半导体晶片中的杂质的表面浓度来获取参考表面浓度的方法，并测量深度通过多种技术在半导体晶片中的杂质的方向浓度分布，分别将多个深度方向浓度分布转换成表面浓度的方法4和从参考表面浓度中选择最相似的值的方法转化表面浓度，并确定赋予所选择的表面浓度作为精确的深度方向浓度分布的深度方向浓度分布。

3. 发明专利

JPH1090240A METHOD OF ANALYZING CONTAMINANT, DEVICE THEREFOR, AND CLEAN ROOM 失效
公开(公告)号：JPH1090240A
公开(公告)日：1998-04-10
申请号：JP24063696
申请日：1996-09-11
申请人： TOSHIBA CORP
发明人： KOZUKA SHOJI , SAKAI KIMITO , NAKAYAMA KUMIKO , YOSHIDA TAKASHI , TATEBE TETSUYA
IPC分类号： G01N1/28 , G01N27/06 , G01N30/00 , G01N30/88
摘要： PROBLEM TO BE SOLVED: To precisely analyze a trace amount of an organic contaminant by exposing the organic contaminant adhered to a wafer surface to the vapor of a solution to evaporate it, and scavenging it into a scavenging vessel. SOLUTION: A valve 11 is switched to a gas cylinder 9 side to supply a fixed quantity of an inert gas such as argon (carrier gas) into a solution evaporating chamber 10 and a wafer setting chamber 20 by a pump 12. When the chamber 10 is then heated by a heater 4, an acetone solution 3 or the like in the solution tank 2 is laid in saturated state by receiving a high steam pressure, filled in the chamber 10, and carried to the chamber 20 together with the carrier gas. An organic contaminant adhered to the surface of a wafer 6 set within the chamber 20 is evaporated and removed by the vapor of the solution 3, and carried to a scavenging vessel 30 together with the vapor of the solution and the carrier gas. In the scavenging vessel, 30, the contaminant is scavenged by a solid scavenger 8, then eluted and recovered from the scavenger 8 by a solution such as organic solvent, and quantitatively and qualitatively analyzed.

4. 发明专利

JPH09139232A LITHIUM BATTERY 失效
公开(公告)号：JPH09139232A
公开(公告)日：1997-05-27
申请号：JP23789396
申请日：1996-09-09
申请人： TOSHIBA CORP
发明人： TATEBE TETSUYA , WATANABE AKIKO , KOZUKA SHOJI , HAYASHI MASARU , YABUKI MOTOO , ENDO HIROSHI , SAKAI KIMITO , MATSUMOTO TOMOKA , SASAKI HIDEYUKI
IPC分类号： H01M10/05 , H01M4/36 , H01M10/0567 , H01M10/40
摘要： PROBLEM TO BE SOLVED: To suppress the influence by an oxidized substance or hydrofluoric acid to suppress the elution of a vessel internal metal by providing, within the vessel, a nonaqueous electrolyte formed of at least one electrolyte selected from fluorine compounds and chloride compounds and a nonaqueous solvent, and containing a boron compound in the electrolyte. SOLUTION: An electrode group 3 formed by winding a laminated stripe matter consisting of a positive electrode 4, a separator 5 and a negative electrode 6 is housed in a bottomed cylindrical vessel 1 having an insulator 2 arranged on the bottom part. An insulating sealing plate 8 is fitted to the upper part of the vessel 1 through an insulating paper 7. The positive electrode 4 containing a boron compound is connected to a positive electrode terminal 9 through a lead wire 10, and the negative electrode 6 is connected to the vessel 1 having an acid resisting thermoplastic resin inner surface. The nonaqueous electrolyte in the vessel 1 is formed of at least one electrolyte selected from fluorine compounds and chloride compounds, and a nonaqueous solvent, and a boron compound is contained in the electrolyte. Thus, the influence of an oxidized substance by the action of contained water, particularly, hydrofluoric acid is suppressed to suppress the elution of the vessel internal metal.

5. 发明专利

JP2002267634A METHOD OF ANALYZING IMPURITY IN SILICON MATERIAL 失效
公开(公告)号：JP2002267634A
公开(公告)日：2002-09-18
申请号：JP2001071678
申请日：2001-03-14
申请人： TOSHIBA CORP
发明人： TATEBE TETSUYA , YAMADA YUJI , YABUKI MOTOO , TOMITA MITSUHIRO , KOZUKA SHOJI
IPC分类号： G01N27/62 , G01N31/00
摘要： PROBLEM TO BE SOLVED: To provide a method of analyzing impurities in a silicon material capable of analyzing 100 ppb or less of As or the like in measuring limit consid ered to be detecting limit heretofore. SOLUTION: The method of analyzing impurities in a silicon material comprises the first step of obtaining a sample solution by dissolving the silicon material together with the impurities to be analyzed by bringing a potassium permanganese solution into contact with the silicon material containing the impurities to be analyzed, then contacting a nitric acid and hydrofluoric acid solution, and heat treating, the second step of converting unnecessary elements into anion molecules by adding hydrogen peroxide and nitric acid to the sample solution, the third step of obtaining a residual separate solution by adsorbing the molecules to a cation exchange resin, and the fourth step of mass analyzing the impurities in the separate solution.

6. 发明专利

JP2001284662A THERMOELECTRIC CONVERSION MATERIAL, THERMOELECTRIC CONVERSION ELEMENT, THERMAL BATTERY, AND COOLER 失效
公开(公告)号：JP2001284662A
公开(公告)日：2001-10-12
申请号：JP2000095176
申请日：2000-03-30
申请人： TOSHIBA CORP
发明人： SHUDO NAOKI , TATEISHI HIROSHI , KONDO NARUHITO , TATEBE TETSUYA
IPC分类号： H01L35/22 , H01L35/16 , H01L35/32 , H01L35/34 , H02N11/00
摘要： PROBLEM TO BE SOLVED: To provide a thermoelectric conversion material having a low coeffi cient of thermal conductivity, a high thermoelectric conversion efficiency, and low toxicity. SOLUTION: This thermoelectric conversion material has a composition expressed by the following chemical formula (1): NaαMXAYO4-Z, where, M and A respectively represent one or more kinds of alkali metallic elements 4 selected from among K, Rb, and Cs and one or more kinds of metallic elements selected from among Co, Fe, Ni and Cu and the mol rations α, X, Y, and Z respectively represent numerical values meeting 0

7. 发明专利

JPH0881719A PRODUCTION OF HIGH PURITY COPPER 失效
公开(公告)号：JPH0881719A
公开(公告)日：1996-03-26
申请号：JP22174294
申请日：1994-09-16
申请人： TOSHIBA CORP
发明人： TATEBE TETSUYA , TAKENAKA MIYUKI , KOZUKA SHOJI , HAYASHI MASARU
IPC分类号： C22B15/14
摘要： PURPOSE: To economically and efficiently produce extremely high. purity copper by treating an impurity-contg. copper successively with an aq. hydrochloric acid soln. contg. hydrogen peroxide, an anion-exchange resin and an eluate with the acid concn. changed and depositing copper from the obtained effluent free of impurities. CONSTITUTION: A copper contg. impurities such as alkali metal and heavy metal is dissolved in an aq. hydrochloric acid soln. contg. 1-10wt.% hydrogen peroxide, and the impurities are magnetically attracted, separated and collected to obtain a treated liq. contg. the complex ion of copper. The treated liq. is brought into contact with an anion-exchange resin (having 75 to 150-mesh size) to adsorb the complex ion and insoluble metal ion, and the unadsorbed alkali metal is separated. Aq. hydrochorlic acid solns. with the concn. changed from high to low are passed through the anion-exchange resin to fractionate the effluent, and a fraction free of impurities and contg. copper is obtained. The liq. fraction is electrolyzed to efficiently obtain extremely high purity copper.

8. 发明专利

JPH07131127A HEAT CONDUCTING SUBSTRATE, MANUFACTURE THEREOF AND CIRCUIT BOARD 失效
公开(公告)号：JPH07131127A
公开(公告)日：1995-05-19
申请号：JP33666593
申请日：1993-12-28
申请人： TOSHIBA CORP
发明人： KOZUKA SHOJI , HAYASHI MASARU , OISHI KATSUYOSHI , YASUMOTO YASUAKI , YAMAKAWA KOJI , IYOGI YASUSHI , KOIWA KAORU , IWASE NOBUO , TATEBE TETSUYA , ENDO HIROSHI
IPC分类号： C04B41/87 , H05K1/03 , H05K3/38
摘要： PURPOSE:To obtain a heat conducting substrate excellent in moisture and chemical resistance, having a smooth surface, by providing an aluminum nitride sintered body and a coating layer 6 formed thereon, made of aluminum phosphate, and having a surface roughness of a specified value or below. CONSTITUTION:A title heat conducting substrate 1 includes an aluminum nitride sintered body 2 and a coating layer 3 formed thereon. The coating layer 3 is substantially made of aluminum phosphate and its surface roughness is 2mum or below. The method of manufacturing the heat conducting substrate 1 includes a step wherein aluminum nitride and phosphate are reacted with each other on the surface of the aluminum nitride sintered body 2 under the condition of pH3 or above to form the coating layer 3 substantially made of aluminum phosphate. This makes it possible to manufacture, using a simple process, a heat conducting substrate excellent in moisture and chemical resistance, having a smooth coating layer 3 excellent in adhesion to aluminum sintered body 2, and substantially made of aluminum phosphate.

9. 发明专利

JP2007064862A Quantitative analysis method for hexavalent chromium in chromate coating film 有权
标题翻译：铬酸盐薄膜中六价铬的定量分析方法
公开(公告)号：JP2007064862A
公开(公告)日：2007-03-15
申请号：JP2005253015
申请日：2005-09-01
申请人： Toshiba Corp , 株式会社東芝
发明人： TATEBE TETSUYA , OKI MITSUHIRO , TAKENAKA MIYUKI
IPC分类号： G01N31/00
CPC分类号： G01N33/20
摘要： PROBLEM TO BE SOLVED: To provide a method of extracting accurately hexavalent chromium in a metal material treatment coating film treated with a chromate, without fluctuating a valency, to conduct measurement.
SOLUTION: This method has an extraction process of putting a metal base material formed with the hexavalent chromate coating film into a container filled with an aqueous solution containing lithium hydroxide, and of extracting the hexavalent chromium by immersing the chromate coating film into an extraction liquid, and by heating it, and a quantitative analysis process for determining quantitatively the extracted hexavalent chromium.
COPYRIGHT: (C)2007,JPO&INPIT

10. 发明专利

JP2006317275A Determination method of environmental harmful element in metal material 审中-公开
标题翻译：金属材料环境有害元素的测定方法
公开(公告)号：JP2006317275A
公开(公告)日：2006-11-24
申请号：JP2005140056
申请日：2005-05-12
申请人： Toshiba Corp , 株式会社東芝
发明人： OKI MITSUHIRO , TAKENAKA MIYUKI , TATEBE TETSUYA
IPC分类号： G01N30/00 , G01N1/10 , G01N1/28 , G01N33/20
摘要： PROBLEM TO BE SOLVED: To determine accurately an environmental harmful element content in a metal material.
SOLUTION: Concerning a method for performing quantitative analysis of at least one environmental harmful element, Cd or Pd in the metal material, this determination method of the environmental harmful element in the metal material is characterized by having a process for decomposing the metal material by an acid, and then replacing it with hydrobromic acid; a process for bringing the dissolved solution into contact with a cation exchanger, and then separating a main component element from the environmental harmful element by using hydrobromic acid; and a process for performing quantitative analysis of the environmental harmful element in eluate. The main metal component having an influence on determination of a trace component can be separated easily by the method, and the environmental harmful element content in the metal material can be determined accurately.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：准确地确定金属材料中的环境有害元素含量。解决方案：关于对金属材料中的至少一种环境有害元素Cd或Pd进行定量分析的方法，金属材料中的环境有害元素的确定方法的特征在于具有分解金属的方法材料用酸，然后用氢溴酸代替; 使溶解的溶液与阳离子交换剂接触的方法，然后通过使用氢溴酸将主要组分元素与环境有害元素分离; 以及对洗脱液中的环境有害元素进行定量分析的方法。可以通过该方法容易地分离对痕量成分的测定有影响的主要金属成分，能够准确地确定金属材料中的环境有害元素含量。版权所有（C）2007，JPO＆INPIT

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