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1. 发明专利

JP2008300605A Collecting method of impurities, and collecting device of impurities 审中-公开
标题翻译：收集犯罪的方法和收集犯罪手段
公开(公告)号：JP2008300605A
公开(公告)日：2008-12-11
申请号：JP2007144729
申请日：2007-05-31
申请人： Toshiba Corp , Toshiba Nanoanalysis Corp , 東芝ナノアナリシス株式会社 , 株式会社東芝
发明人： MIZUNO AYAKO , SASAKI HIROMI , YAMADA YUJI , SAKURAI YOSHINOBU , TSUKIYAMA HIROYOSHI
IPC分类号： H01L21/66
摘要： PROBLEM TO BE SOLVED: To provide a collecting method of impurities capable of precisely collecting the impurities on the surface of a semiconductor substrate.
SOLUTION: The collecting method of impurities measures the impurities present on the surface of a semiconductor substrate 1. A collecting member 2 for collecting impurities is made to contact to a region to be measured of the surface of the semiconductor substrate 1. While the collecting member 2 is kept to contact the region to be measured, it is shifted relative to the semiconductor substrate 1, to allow the collecting member 2 to collect the impurities present on the semiconductor substrate 1.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供能够精确地收集半导体衬底的表面上的杂质的杂质的收集方法。＆lt; P＆gt;解决方案：杂质的收集方法测量存在于半导体衬底1的表面上的杂质。使用于收集杂质的收集构件2与半导体衬底1的表面的待测区域接触。收集构件2保持与被测量区域接触，相对于半导体衬底1移动，以使收集构件2收集存在于半导体衬底1上的杂质。版权所有（C）2009 ，JPO＆INPIT

2. 发明专利

JP2008147434A Method for manufacturing semiconductor device 审中-公开
标题翻译：制造半导体器件的方法
公开(公告)号：JP2008147434A
公开(公告)日：2008-06-26
申请号：JP2006333141
申请日：2006-12-11
申请人： Toshiba Corp , 株式会社東芝
发明人： YAMADA YUJI , TOMITA HIROSHI
IPC分类号： H01L21/306 , H01L21/28 , H01L21/768
CPC分类号： H01L21/31111 , H01L21/02063
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device which can perform a desired fine wet etching processing even for a semiconductor substrate that has a hole of high aspect ratio and can manufacture a fine semiconductor device.
SOLUTION: Prescribed chemicals are supplied onto a surface of a silicon wafer 1 and into a hole 3. Next, IPA steam is supplied onto the surface of the silicon wafer 1, and the chemicals supplied into the hole 3 of the silicon wafer 1 are held, while only the chemicals on the surface of the silicon wafer 1 are removed. Next, the silicon wafer 1 is maintained, in a state where the chemicals in the hole 3 are held and the chemicals on the surface of the silicon wafer 1 are removed, and the interior of the hole 3 is subjected to wet-etching. Next, pure water is supplied to be replaced with the chemicals in the hole 3, and the chemicals in the hole 3 are removed.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种即使对于具有高纵横比的孔的半导体衬底也能够进行所需的细湿式蚀刻处理并且可以制造精细的半导体器件的半导体器件的制造方法。
解决方案：将规定的化学品供应到硅晶片1的表面并进入孔3.接下来，将IPA蒸汽供应到硅晶片1的表面，并将供应到硅晶片的孔3中的化学品 1，而仅去除硅晶片1的表面上的化学物质。接下来，在保持孔3中的化学物质并除去硅晶片1的表面上的化学物质的状态下，保持硅晶片1，并且对孔3的内部进行湿法蚀刻。接下来，将纯水供给孔3中的化学物质代替，并将孔3中的化学物质除去。版权所有（C）2008，JPO＆INPIT

3. 发明专利

JP2007317977A Method and system for cleaning scrub 审中-公开
标题翻译：清洁SCRUB的方法和系统
公开(公告)号：JP2007317977A
公开(公告)日：2007-12-06
申请号：JP2006147696
申请日：2006-05-29
申请人： Toshiba Corp , 株式会社東芝
发明人： YAMADA YUJI , IIMORI HIROYASU , TOMITA HIROSHI , YAMADA KOREI , NAGASHIMA YUKINOBU
IPC分类号： H01L21/304
摘要： PROBLEM TO BE SOLVED: To provide a scrubbing cleaning method and a scrubbing cleaning system by which satisfactory cleaning can be performed even when various kinds of foreign materials adhere to a substrate. SOLUTION: A roll brush 1 formed substantially in a cylindrical shape is set on the backside of a semiconductor wafer W, in such a way that an additive 3 can be supplied from its inside toward the backside of the semiconductor wafer W. Also, a mechanism is provided for supplying a deionized water 2 as a cleaning liquid to the front side and the backside of the semiconductor wafer W. The additive 3 is neutral or acid. The interfacial electrokinetic potential of the foreign materials adhering to the semiconductor wafer W and the interfacial electrokinetic potential of the roll brush 1 are controlled to be of the same polarity. In this way, the foreign materials adhering to the semiconductor wafer W and the roll brush 1 are electrostatically repulsive. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种擦洗清洁方法和洗涤清洁系统，即使当各种异物粘附到基底上时也可以进行令人满意的清洁。解决方案：以半圆形晶片W的背面设置基本上形成为圆筒状的辊刷1，从而可以从其内侧朝向半导体晶片W的背面供给添加剂3。提供了一种用于将去离子水2作为清洁液体供应到半导体晶片W的前侧和后侧的机构。添加剂3是中性的或酸的。附着在半导体晶片W上的异物的界面电动势和辊刷1的界面电动势被控制为具有相同的极性。以这种方式，附着在半导体晶片W和辊刷1上的异物是静电排斥的。版权所有（C）2008，JPO＆INPIT

4. 发明专利

JP2007214412A Semiconductor substrate cleaning method 审中-公开
标题翻译：半导体衬底清洗方法
公开(公告)号：JP2007214412A
公开(公告)日：2007-08-23
申请号：JP2006033445
申请日：2006-02-10
申请人： Kanto Chem Co Inc , Toshiba Corp , 株式会社東芝 , 関東化学株式会社
发明人： TOMITA HIROSHI , YAMADA YUJI , YAMADA KOREI , ISHIKAWA NORIO , ABE YUMIKO
IPC分类号： H01L21/304 , C11D7/34 , C11D7/36
摘要： PROBLEM TO BE SOLVED: To provide a cleaning method capable of effectively removing various particles including silica particles, alumina particles, and silicon nitride particles, as well as metal contamination without etching a silicon substrate and a glass substrate.
SOLUTION: The semiconductor substrate cleaning method cleans a semiconductor substrate using a semiconductor cleaning fluid composition. The fluid composition includes: a compound having at least two or more of sulfonic groups in one molecule, one or two kinds or more selected from a group consisting of a phytic acid and a condensed polyphosphoric acid compound, an inorganic acid, and water. Also, physical power is used for cleaning at the same time.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种能够有效地除去包括二氧化硅颗粒，氧化铝颗粒和氮化硅颗粒在内的各种颗粒以及金属污染而不蚀刻硅衬底和玻璃衬底的清洁方法。解决方案：半导体衬底清洗方法使用半导体清洗液组合物清洗半导体衬底。流体组合物包括：在一个分子中具有至少两个以上的磺酸基的化合物，选自植酸和缩合多磷酸化合物，无机酸和水中的一种或两种以上。同时，物理电源同时用于清洁。版权所有（C）2007，JPO＆INPIT

5. 发明专利

JP2006038875A Fuel supporting attachment 审中-公开
标题翻译：燃油支持附件
公开(公告)号：JP2006038875A
公开(公告)日：2006-02-09
申请号：JP2005254982
申请日：2005-09-02
申请人： Toshiba Corp , 株式会社東芝
发明人： KATO TATSUMA , FUKAMICHI KENJIRO , YAMADA YUJI , SATO MAKOTO , SHIMAZU TADAAKI , TANABE TOMOJI , MATSUMURA HIROTOSHI , MATSUNAGA KEIJI , OKUDA TAKESHI
IPC分类号： G21C5/06 , G21C3/30 , G21C15/02
CPC分类号： Y02E30/40
摘要： PROBLEM TO BE SOLVED: To provide a fuel supporting attachment capable of preventing passing of a linear/strip foreign matter included in a coolant while minimizing the pressure loss.
SOLUTION: The fuel supporting attachment 60 for supporting a fuel assembly 50 for nuclear reactor including a plurality of fuel rods 51 and an upper tie plate 51 and a lower tie plate 52 supporting the upper and lower ends of the fuel rods 51 comprises a filter 20a catching a solid foreign matter 4 included in the coolant on the inlet side of the fuel assembly 50. A plurality of through holes 3 formed in the filter 20a have a bent portion by which the outlet portion cannot be straightly seen through from the inlet portion. The plurality of through-holes 3 are arranged zigzag in a passage opening surface.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种燃料支撑附件，其能够防止包括在冷却剂中的线性/带状异物通过，同时使压力损失最小化。解决方案：用于支撑用于核反应堆的燃料组件50的燃料支撑附件60包括多个燃料棒51和上连接板51以及支撑燃料棒51的上端和下端的下连接板52，包括：在燃料组件50的入口侧夹持包括在冷却剂中的固体异物4的过滤器20a。形成在过滤器20a中的多个通孔3具有弯曲部分，出口部分不能从第入口部分。多个通孔3在通道开口表面中以锯齿形排列。版权所有（C）2006，JPO＆NCIPI

6. 发明专利

JP2012138560A Sample contamination method 有权
标题翻译：样品污染方法
公开(公告)号：JP2012138560A
公开(公告)日：2012-07-19
申请号：JP2011134681
申请日：2011-06-17
申请人： Toshiba Corp , Toshiba Nanoanalysis Corp , 東芝ナノアナリシス株式会社 , 株式会社東芝
发明人： YAMADA YUJI , KATANO MAKIKO , MIZUNO AYAKO , KAMIMURA ERI , NAMIKAWA ASUKA , TAKEUCHI FUHITO
IPC分类号： H01L21/66 , G01N1/00 , G01N23/223
CPC分类号： H01L21/02041 , G01N1/2813 , H01L22/10
摘要： PROBLEM TO BE SOLVED: To provide a sample contamination method which creates samples formed by evenly contaminating semiconductor devices on a substrate.SOLUTION: A sample contamination method according to this invention has: a process in which chemicals containing contaminants are sprayed to the interior of a housing; a process in which a semiconductor substrate is carried into the housing filled with the chemicals through spraying; a process in which the semiconductor substrate is left in the housing filled with the chemicals for a predetermined time; and a process in which the semiconductor substrate is removed from the housing after the predetermined time elapses.
摘要翻译：要解决的问题：提供一种样品污染方法，其产生通过均匀地污染基板上的半导体器件形成的样品。解决方案：根据本发明的样品污染方法具有：将含有污染物的化学品喷洒到壳体内部的过程; 将半导体衬底通过喷射装载到装有化学品的壳体中的过程; 将半导体基板留在装有化学品的壳体中预定时间的过程; 以及在经过预定时间后将半导体衬底从壳体上移除的过程。版权所有（C）2012，JPO＆INPIT

7. 发明专利

JP2009231346A Substrate processing apparatus and method 审中-公开
标题翻译：基板加工装置和方法
公开(公告)号：JP2009231346A
公开(公告)日：2009-10-08
申请号：JP2008071638
申请日：2008-03-19
申请人： Toshiba Corp , 株式会社東芝
发明人： INUKAI MINAKO , OGAWA YOSHIHIRO , TOMITA HIROSHI , IIMORI HIROYASU , YAMADA YUJI , UOZUMI NOBUHIRO , JI LINAN , UMEZAWA KAORI , OGUCHI HISASHI
IPC分类号： H01L21/304 , H01L21/027 , H01L21/306
CPC分类号： H01L21/02082 , H01L21/02057
摘要： PROBLEM TO BE SOLVED: To provide a substrate processing method for controlling collapse of patterns formed on a substrate before processing with a processing solution.
SOLUTION: In the method of processing the substrate, a plurality of patterns are formed adjacently on the principal front surface of the substrate. The substrate processing method includes the steps of supplying a first processing solution to the principal front surface of the substrate to deposit the first processing solution to the principal front surface of the substrate and supplying a second processing solution having a surface tension higher than that of the first processing solution to the principal front surface of the substrate to process the principal front surface of the substrate with the second processing solution under the condition that the first processing solution is deposited to the principal front surface of the substrate.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于在用处理溶液处理之前控制在基板上形成的图案的塌陷的基板处理方法。解决方案：在处理基板的方法中，在基板的主表面上相邻地形成多个图案。基板处理方法包括以下步骤：将第一处理溶液提供到基板的主表面，以将第一处理溶液沉积到基板的主正面，并提供表面张力高于基板的表面张力的第二处理溶液第一处理溶液到基板的主表面，以在第一处理溶液沉积到基板的主正面上的条件下用第二处理溶液处理基板的主正面。版权所有（C）2010，JPO＆INPIT

8. 发明专利

JP2005101298A Etching apparatus, and apparatus and method for evaluating substrate surface 审中-公开
标题翻译：蚀刻装置，以及评估基板表面的装置和方法
公开(公告)号：JP2005101298A
公开(公告)日：2005-04-14
申请号：JP2003333458
申请日：2003-09-25
申请人： Toshiba Corp , Toshiba Microelectronics Corp , 東芝マイクロエレクトロニクス株式会社 , 株式会社東芝
发明人： TAKENAKA MIYUKI , NORITOMI YASUKO , KOZUKA SHOJI , YAMADA YUJI
IPC分类号： G01B21/02 , H01L21/306 , H01L21/66
摘要： PROBLEM TO BE SOLVED: To provide an etching apparatus used in sample preparation for more accurately carrying out a substrate surface analysis, and an apparatus and a method for evaluating a substrate surface using it.
SOLUTION: The etching apparatus comprises a substrate holding base having a support surface for supporting a substrate, and a plate-shaped jig which sandwiches the substrate and is fixed onto the substrate holding base. The plate-shaped jig comprises one or more apertures for exposing specific regions of the substrate surface at the bottoms of those apertures, and annular seals in the peripheries of respective apertures for bringing the substrate and the plate-shaped body in close contact. The sample etched to a predetermined depth in the specific regions of the substrate surface is prepared by using this etching device, and the analysis of the etched surface is carried out.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供用于样品准备以更精确地进行基板表面分析的蚀刻装置，以及使用该基板表面评估基板表面的装置和方法。解决方案：蚀刻装置包括具有用于支撑基板的支撑表面的基板保持基座和夹持基板并固定在基板保持基座上的板状夹具。板状夹具包括一个或多个孔，用于在这些孔的底部露出衬底表面的特定区域，以及用于使衬底和板状体紧密接触的各个孔的周边中的环形密封。通过使用该蚀刻装置制备在基板表面的特定区域中蚀刻到预定深度的样品，并且进行蚀刻表面的分析。版权所有（C）2005，JPO＆NCIPI

9. 发明专利

JP2004085339A Method for analyzing impurity in semiconductor sample, and impurity concentrator of semiconductor sample 有权
公开(公告)号：JP2004085339A
公开(公告)日：2004-03-18
申请号：JP2002246167
申请日：2002-08-27
申请人： Toshiba Corp , 株式会社東芝
发明人： YAMADA YUJI , TATEBE TETSUYA , TAKENAKA MIYUKI , KOZUKA SHOJI
IPC分类号： G01N27/62 , G01N1/10 , G01N1/28 , G01N1/36
摘要： PROBLEM TO BE SOLVED: To provide an analysis method for determining metal impurities in a semiconductor thin film containing germanium.
SOLUTION: A solvent L comprising a hydrofluoric acid and a nitric acid is supplied from a solvent supply nozzle 7 onto the surface of an Si-Ge semiconductor sample 5 for etching the surface of the semiconductor sample 5. The etching liquid L is heated for dissolving a dried substance S where an Si constituent is volatilized by a hydrochloric acid supplied from a nozzle 9, and a melt is heated to remove germanium and to create a measurement sample. Since Si and Ge have been removed from the measurement sample, the other impurity elements can be measured by ICP-MS or the like.
COPYRIGHT: (C)2004,JPO

10. 发明专利

JP2013190403A Apparatus and method for analysing impurity 有权
标题翻译：用于分析损失的装置和方法
公开(公告)号：JP2013190403A
公开(公告)日：2013-09-26
申请号：JP2012058918
申请日：2012-03-15
申请人： Toshiba Corp , 株式会社東芝
发明人： YAMADA YUJI , KATANO MAKIKO , TAKEUCHI CHIKASHI , NAITO TOMOYO
IPC分类号： G01N23/223 , G01N1/28
CPC分类号： H01L22/12
摘要： PROBLEM TO BE SOLVED: To perform TXRF measurement of impurities in a semiconductor thin film quickly and at low costs.SOLUTION: An impurity analysis method according to the invention includes the steps of: subjecting a silicon-containing film formed on a substrate to vapour phase decomposition; after the vapour phase decomposition, heating the substrate at a first temperature; after heating at the first temperature, heating the substrate at a second temperature higher than the first temperature to remove a silicon compound precipitated on the surface of the silicon-containing film; after heating at the second temperature, dropping collecting liquid onto the substrate surface and moving the liquid on the substrate surface to collect metal into the collecting liquid; and drying the collecting liquid and subjecting a dry mark thereof to fluorescent X-ray analysis.
摘要翻译：要解决的问题：快速，低成本地对半导体薄膜中的杂质进行TXRF测量。解决方案：根据本发明的杂质分析方法包括以下步骤：将形成在基底上的含硅膜进行气相分解; 在气相分解之后，在第一温度下加热衬底; 在第一温度下加热后，在高于第一温度的第二温度下加热基板以除去沉淀在含硅膜表面上的硅化合物; 在第二温度下加热后，将集液液滴到基板表面上，并将液体移动到基板表面上以将金属收集到收集液中; 并干燥收集液并对其干标记进行荧光X射线分析。

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