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1. 发明专利

JPH11192583A SOLDER MATERIAL AND MANUFACTURE OF SOLDER MATERIAL 失效
公开(公告)号：JPH11192583A
公开(公告)日：1999-07-21
申请号：JP36143197
申请日：1997-12-26
申请人： TOSHIBA CORP
发明人： TADAUCHI KIMIHIRO , TEJIMA KOICHI , KOMATSU IZURU , TOMITA MITSUHIRO
IPC分类号： B23K35/26 , B23K35/02 , B23K35/14 , B23K35/28 , B23K35/40 , H05K3/34
摘要： PROBLEM TO BE SOLVED: To provide a solder material which does not contain lead, displays excellent wettability for a joining member and has versatility and easiness for handling, and the manufacturing method of the solder material. SOLUTION: A first metal material is coated by a thin layer second metal material to obtain a coated body, and the coated body is drawn into a linear shape by rolling to obtain a linear solder material. Further, a granular solder material is obtained by cutting the linear formed body in the direction crossing the axis of the drawn linear formed body to granulate it. The solder material 4 thereof is provided with a first metal layer 6 and a second metal layer 5 which have different composition each other, the first metal layer 6 is formed into a shape having an axial property of uniaxial orientation, and the first metal layer 6 is coated with the second metal layer 5 so that the second metal layer 5 encloses the axis of the first metal layer 6. Zinc is incorporated in the first metal layer 6, and zinc is not incorporated in the second metal layer 5 but tin is incorporated in it.

2. 发明专利

JPH10256328A IMPURITY-CONDENSING EQUIPMENT AND IMPURITY-ANALYZING METHOD 失效
公开(公告)号：JPH10256328A
公开(公告)日：1998-09-25
申请号：JP6105197
申请日：1997-03-14
申请人： TOSHIBA CORP
发明人： MATSUNAGA HIDEKI , TOMITA MITSUHIRO , SUZUKI ISAO , OMORI HIROFUMI
IPC分类号： G01N23/223 , G01N23/225 , G01N23/227 , H01L21/268 , H01L21/66
摘要： PROBLEM TO BE SOLVED: To provide an impurity-condensing equipment, which can condense the impurities in a sample without dissolving he semiconductor crystal material and to provide an impurity-analyzing method which can analyze the sample, wherein the impurities are condensed, quickly, simply and highly sensitively. SOLUTION: After ions or electrons are emitted on the specified position on a semiconductor crystal sample 11 by an ionizing radiation source 27, the laser light having the specified energy intensity is emitted on the specified position with a laser oscillator 13. Thus, the impurities contained in the semiconductor crystal material 11 is condensed. Then, the impurity condensed semiconductor crystal sample 11 is analyzed with high sensitivity by using the specified physical analyzing means.

3. 发明专利

JPH09304253A METHOD AND APPARATUS FOR CONCENTRATING AND ANALYZING IMPURITIES 失效
公开(公告)号：JPH09304253A
公开(公告)日：1997-11-28
申请号：JP19665496
申请日：1996-07-25
申请人： TOSHIBA CORP
发明人： MATSUNAGA HIDEKI , YAMAGUCHI HIROSHI , TOMITA MITSUHIRO , YOSHIKI MASAHIKO , DOI SEIZO , KOZUKA SHOJI , KONUMA MASATAKA
IPC分类号： G01N1/36 , C30B33/00 , H01L21/66
摘要： PROBLEM TO BE SOLVED: To concentrate impurities contained in a sample such as a semiconductor crystal without dissolving the sample, and to rapidly and simply analyze the conc. impurities in the sample with high sensitivity. SOLUTION: A predetermined position of a semiconductor crystal sample 11 is repeatedly irradiated with laser beam of a predetermined intensity by a laser oscillator 13 to concentrate impurities contained in the semiconductor crystal sample 11. Thereafter, the impurities contained in the conc. part of the semiconductor crystal sample 11 are analyzed with high sensitivity by a predetermined physical analizing means. If necessary, an insulating film pervious to laser beam such as an oxidation film is formed on the surface of the semiconductor crystal sample before concentrating impurities by laser beam irradiation.

4. 发明专利

JPH05214488A MEMBER FOR HEAT EXCHANGER 失效
公开(公告)号：JPH05214488A
公开(公告)日：1993-08-24
申请号：JP1691192
申请日：1992-01-31
申请人： TOSHIBA CORP
发明人： TOMITA MITSUHIRO , OMORI HIROFUMI , NAKAMURA SHINICHI , TAKEUCHI YOKO , INABA MICHIHIKO
IPC分类号： C22C9/00 , C22C38/00 , C22C38/16 , C22C38/20
摘要： PURPOSE:To provide a member for heat exchanger excellent in corrosion resistance, increased in strength, and having high thermal conductivity. CONSTITUTION:The member is a member for heat exchanger, increased in thermal conductivity and composed of an alloy where two phases of Cu phase and Fe phase exist as a mixture and Zn and/or Sn is incorporated into the Cu phase or both of the Cu and Fe phases and which has a composition consisting of, by weight, 10-90% Cu, 10-90% Fe, 0.1-40% Zn, 0.1-20% Sn, and impurities and a member for heat exchanger, increased in thermal conductivity and composed of an alloy where two phases of Cu phase and Fe phase exist as a mixture and Zn and/or Sn is incorporated into the Cu phase or both of the Cu and Fe phases and also Cr is incorporated into the above Fe phase and which has a composition consisting of, by weight, 10-90% Cu, 10-90% Fe, 0.1-40% Zn, 0.1-20% Sn, 0.1-20% Cr, and impurities.

5. 发明专利

JPH05175282A LAMINATED CONDUCTOR 失效
公开(公告)号：JPH05175282A
公开(公告)日：1993-07-13
申请号：JP6682292
申请日：1992-03-25
申请人： TOSHIBA CORP
发明人： TOMITA MITSUHIRO , FUJIMORI YOSHINORI , MORITA MASAAKI , OMORI HIROFUMI , NAKAMURA SHINICHI , ISHIMARU YOKO , ENDO HIROSHI , INABA MICHIHIKO , IKEMIZU MORIHIKO
IPC分类号： H01L21/60 , C22C9/00
摘要： PURPOSE:To obtain a laminated conductor which has an excellent strength and joining property and on which a fine pattern can be formed with high accuracy and excellent reproducibility by constituting the conductor of an insulating substrate and conductor layer which is integrally supported on the surface of the substrate and made of a specific amount of Fe and the remaining amount of Cu, etc. CONSTITUTION:The title conductor is provided with an insulating substrate 2 and conductor layer 1 which is integrally supported on at least one main surface of the substrate 2 and the layer 1 is composed of 0.1-95wt.% Fe and the remaining amount of Cu and unavoidable impurities. Or, the layer 1 is made of 0.1-95wt.% Fe, at least one selected from among 0.1-20wt.% Cr, 0.01-20wt.% Ni, 0.001-0.3wt.% Al, 0.001-3wt.% Ti, 0.001-1wt.% V, Nb, Zr, Y, Ce, Mg, Ca, Si, Mn, P, or Zn, and 0.0005-1wt.% B, and the remaining amount of Cu and unavoidable impurities.

6. 发明专利

JPH05171318A MEMBER FOR ELECTRONIC PARTS 失效
公开(公告)号：JPH05171318A
公开(公告)日：1993-07-09
申请号：JP34259591
申请日：1991-12-25
申请人： TOSHIBA CORP
发明人： INABA MICHIHIKO , MATSUNAGA HIDEKI , OMORI HIROFUMI , TOMITA MITSUHIRO , TAKEUCHI YOKO
IPC分类号： C22C9/00 , C22C38/00 , H01L23/48
摘要： PURPOSE:To provide a member for electronic parts excellent in the solderability and the weather resistance of solder and ensuring the mechanical strength and the bonding property necessary for electronic parts. CONSTITUTION:This member for electronic parts consists of 0.5-30wt.% at least one of Pb and In and the balance essentially Cu and Fe.

7. 发明专利

JP2006343244A APPARATUS, PROGRAM, AND METHOD FOR DECONVOLUTION ANALYSIS 审中-公开
公开(公告)号：JP2006343244A
公开(公告)日：2006-12-21
申请号：JP2005170148
申请日：2005-06-09
申请人： TOSHIBA CORP
发明人： TOMITA MITSUHIRO , TANAKA HIROTAKE , YOSHIKI MASAHIKO
IPC分类号： G01N27/62 , G01N23/227
摘要： PROBLEM TO BE SOLVED: To analyze even an ultra-thin membrane, present in the outermost surface of a sample and a distribution of impurities having a steep inclination, with correct depth direction distribution. SOLUTION: Correction is performed on the basis of changes in sputtering yields, in the depth direction at the initial stage of sputtering (S4), and the depth axis of the corrected depth direction distribution is extended (S5). The depth direction distribution, of which the depth axis is extended is constituted of 2 n pieces of data points, and data interpolation is performed on the distances between data at regular intervals (S6). Distribution data on the resolution function of the depth direction is prepared through the use of parameters of the resolution function of the depth direction extracted in S3, in addition to the distances between data points of the data-interpolated depth direction distribution and the number of the pieces of data (S7). Deconvolution is performed, on the basis of the created distribution data on the resolution function of the depth direction and the depth direction distribution determined by interpolation (S8). The extended depth axis of deconvoluted data is returned to an actual depth axis (S9). COPYRIGHT: (C)2007,JPO&INPIT

8. 发明专利

JP2006197480A Monitoring system and measured data video device applicable to the same 审中-公开
标题翻译：监控系统和适用于该系统的测量数据视频设备
公开(公告)号：JP2006197480A
公开(公告)日：2006-07-27
申请号：JP2005009159
申请日：2005-01-17
申请人： For-A Co Ltd , Toshiba Corp , 株式会社朋栄 , 株式会社東芝
发明人： ITO YASUYUKI , TOMITA MITSUHIRO
IPC分类号： H04N7/18
摘要： PROBLEM TO BE SOLVED: To make usability satisfactory by making a transmission line to a monitoring station single.
SOLUTION: This monitoring system for acquiring video data obtained from a telecamera 11 and measured data obtained from measuring instruments 13-1 to 13-N and transmitting the video data and the measured data to the monitoring station 2 through the transmission line 101 comprises a measured data video device 3 for making the measured data a video signal to combine the video signal with a video signal obtained from the telecamera 11 and transmits data combined by the measured data video device to the monitoring station 2 through the transmission line 101.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：通过将监控站的传输线单独地使可用性令人满意。解决方案：用于获取从电视摄影机11获得的视频数据的监视系统和从测量仪器13-1至13-N获得的测量数据，并通过传输线101将视频数据和测量数据发送到监控站2 包括测量数据视频设备3，用于使测量数据成为视频信号，以将视频信号与从电视摄影机构11获得的视频信号相结合，并通过传输线101将由测量数据视频设备组合的数据发送到监控站2。版权所有（C）2006，JPO＆NCIPI

9. 发明专利

JP2003033894A Soldering material 有权
标题翻译：焊接材料
公开(公告)号：JP2003033894A
公开(公告)日：2003-02-04
申请号：JP2002141344
申请日：2002-05-16
申请人： Toshiba Corp , 株式会社東芝
发明人： TADAUCHI KIMIHIRO , TEJIMA KOICHI , KOMATSU IZURU , TOMITA MITSUHIRO
IPC分类号： B23K35/14 , B23K35/26 , B23K35/40
摘要： PROBLEM TO BE SOLVED: To provide a soldering material which does not contain lead, exerts excellent wettability for a joining member and has versatility and easiness for handling, and the manufacturing method thereof.
SOLUTION: The first metal material is coated by the thin layer second metal material to obtain a coated body, and the coated body is drawn and molded into a linear shape by rolling to obtain a linear soldering material. Moreover, a granular soldering material is obtained by cutting the linear molded body in the direction crossing the axis of the drawn-molded linear molded body and granulating it. The soldering materials 4 have the first metal layer 6 and the second metal layer 5 which have different compositions, the first metal layer is formed into a shape having an axial property drawn in the uniaxial direction, and the first metal layer is coated with the second metal layer so as to surround the axis of the first metal layer. The first metal layer contains zinc, and the second metal layer does not contain zinc but contains tin.
COPYRIGHT: (C)2003,JPO
摘要翻译：要解决的问题：为了提供不含铅的焊接材料，对接合部件具有优异的润湿性，并且具有通用性和易于处理的制造方法及其制造方法。解决方案：第一金属材料被薄层第二金属材料涂覆以获得涂层体，并且通过轧制将涂覆体拉伸并模制成线形，以获得线性焊接材料。此外，通过沿与拉伸成型的线性成型体的轴线交叉的方向切割线状成型体，并对其进行粒化，得到颗粒状的焊接材料。焊接材料4具有第一金属层6和第二金属层5，第一金属层6和第二金属层5具有不同的组成，第一金属层形成为具有在单轴方向上拉伸的轴向特性的形状，并且第一金属层被涂覆有第二金属层金属层以围绕第一金属层的轴线。第一金属层含有锌，第二金属层不含锌，但含有锡。

10. 发明专利

JP2002372525A Measuring method of impurity in semiconductor wafer and measuring program of impurity in semiconductor wafer 有权
标题翻译：半导体波导中的测量方法和SEMICONDUCTOR WAFER中的测量程序
公开(公告)号：JP2002372525A
公开(公告)日：2002-12-26
申请号：JP2001181790
申请日：2001-06-15
申请人： Toshiba Corp , 株式会社東芝
发明人： TOMITA MITSUHIRO , SUZUKI MASAMICHI , TATEBE TETSUYA , KOZUKA SHOJI
IPC分类号： G01N1/28 , G01N23/203 , G01N23/225 , G01N27/62 , G01N31/00 , G01N33/00 , H01L21/66
CPC分类号： G01N23/225 , G01N23/203 , Y10T436/24
摘要： PROBLEM TO BE SOLVED: To provide a measuring method of impurities in a semiconductor wafer capable of determining by which technique the true or the most probably true depth direction concentration distribution is acquired, from among a plurality of techniques for acquiring the depth direction concentration distributions. SOLUTION: This method is characterized by having a process for acquiring the reference surface concentration by measuring the surface concentration of the impurities in the semiconductor wafer by a chemical analysis method, a nuclear reaction method, or a Rutherford back scattering spectroscopy, and measuring the depth direction concentration distribution of the impurities in the semiconductor wafer by the plurality of techniques, a process 4 for converting the multiple depth direction concentration distributions into surface concentrations, respectively, and a process for selecting the most similar value to the reference surface concentration from among the converted surface concentrations, and determining the depth direction concentration distribution imparting the selected surface concentration as the accurate depth direction concentration distribution.
摘要翻译：要解决的问题：从用于获取深度方向浓度分布的多种技术中，提供能够确定由哪种技术获得真实或最可能的真深度方向浓度分布的半导体晶片中的杂质的测量方法。解决方案：该方法的特征在于具有通过化学分析法，核反应法或卢瑟福背散射光谱法测量半导体晶片中的杂质的表面浓度来获取参考表面浓度的方法，并测量深度通过多种技术在半导体晶片中的杂质的方向浓度分布，分别将多个深度方向浓度分布转换成表面浓度的方法4和从参考表面浓度中选择最相似的值的方法转化表面浓度，并确定赋予所选择的表面浓度作为精确的深度方向浓度分布的深度方向浓度分布。

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